JP2013170139A - トリメチルシランの精製方法 - Google Patents
トリメチルシランの精製方法 Download PDFInfo
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- JP2013170139A JP2013170139A JP2012034668A JP2012034668A JP2013170139A JP 2013170139 A JP2013170139 A JP 2013170139A JP 2012034668 A JP2012034668 A JP 2012034668A JP 2012034668 A JP2012034668 A JP 2012034668A JP 2013170139 A JP2013170139 A JP 2013170139A
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- Prior art keywords
- trimethylsilane
- activated carbon
- impurities
- gas
- adsorption
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- PQDJYEQOELDLCP-UHFFFAOYSA-N trimethylsilane Chemical compound C[SiH](C)C PQDJYEQOELDLCP-UHFFFAOYSA-N 0.000 title claims abstract description 90
- 238000000034 method Methods 0.000 title claims abstract description 38
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims abstract description 165
- 239000012535 impurity Substances 0.000 claims abstract description 43
- QPLDLSVMHZLSFG-UHFFFAOYSA-N Copper oxide Chemical compound [Cu]=O QPLDLSVMHZLSFG-UHFFFAOYSA-N 0.000 claims abstract description 39
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 claims abstract description 30
- UBHZUDXTHNMNLD-UHFFFAOYSA-N dimethylsilane Chemical compound C[SiH2]C UBHZUDXTHNMNLD-UHFFFAOYSA-N 0.000 claims abstract description 22
- UIUXUFNYAYAMOE-UHFFFAOYSA-N methylsilane Chemical compound [SiH3]C UIUXUFNYAYAMOE-UHFFFAOYSA-N 0.000 claims abstract description 16
- 239000011787 zinc oxide Substances 0.000 claims abstract description 15
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 claims abstract description 11
- 229910000077 silane Inorganic materials 0.000 claims abstract description 11
- 238000004519 manufacturing process Methods 0.000 abstract description 7
- 239000002994 raw material Substances 0.000 abstract description 5
- 239000004065 semiconductor Substances 0.000 abstract description 5
- 239000005751 Copper oxide Substances 0.000 abstract description 3
- 229910000431 copper oxide Inorganic materials 0.000 abstract description 3
- 230000015572 biosynthetic process Effects 0.000 abstract description 2
- 239000007789 gas Substances 0.000 description 29
- 238000001179 sorption measurement Methods 0.000 description 27
- 238000000746 purification Methods 0.000 description 19
- 238000010790 dilution Methods 0.000 description 16
- 239000012895 dilution Substances 0.000 description 16
- 238000007323 disproportionation reaction Methods 0.000 description 12
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 description 12
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 10
- IJOOHPMOJXWVHK-UHFFFAOYSA-N chlorotrimethylsilane Chemical compound C[Si](C)(C)Cl IJOOHPMOJXWVHK-UHFFFAOYSA-N 0.000 description 10
- 238000011002 quantification Methods 0.000 description 9
- 229910001873 dinitrogen Inorganic materials 0.000 description 8
- CZDYPVPMEAXLPK-UHFFFAOYSA-N tetramethylsilane Chemical compound C[Si](C)(C)C CZDYPVPMEAXLPK-UHFFFAOYSA-N 0.000 description 8
- 239000003795 chemical substances by application Substances 0.000 description 6
- 238000004817 gas chromatography Methods 0.000 description 6
- 239000010949 copper Substances 0.000 description 5
- -1 lithium aluminum hydride Chemical compound 0.000 description 5
- 239000000047 product Substances 0.000 description 5
- 239000005051 trimethylchlorosilane Substances 0.000 description 5
- 238000009835 boiling Methods 0.000 description 4
- 230000007423 decrease Effects 0.000 description 4
- 238000004821 distillation Methods 0.000 description 4
- 230000020169 heat generation Effects 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- 238000010926 purge Methods 0.000 description 4
- 239000011701 zinc Substances 0.000 description 4
- 239000011230 binding agent Substances 0.000 description 3
- 229910052799 carbon Inorganic materials 0.000 description 3
- 229910052802 copper Inorganic materials 0.000 description 3
- 238000007865 diluting Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 238000010438 heat treatment Methods 0.000 description 3
- 238000012856 packing Methods 0.000 description 3
- 229920005989 resin Polymers 0.000 description 3
- 239000011347 resin Substances 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- 229920001187 thermosetting polymer Polymers 0.000 description 3
- 238000009849 vacuum degassing Methods 0.000 description 3
- 229910052725 zinc Inorganic materials 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- 239000005046 Chlorosilane Substances 0.000 description 2
- XTHFKEDIFFGKHM-UHFFFAOYSA-N Dimethoxyethane Chemical compound COCCOC XTHFKEDIFFGKHM-UHFFFAOYSA-N 0.000 description 2
- WHXSMMKQMYFTQS-UHFFFAOYSA-N Lithium Chemical compound [Li] WHXSMMKQMYFTQS-UHFFFAOYSA-N 0.000 description 2
- 239000002156 adsorbate Substances 0.000 description 2
- KOPOQZFJUQMUML-UHFFFAOYSA-N chlorosilane Chemical compound Cl[SiH3] KOPOQZFJUQMUML-UHFFFAOYSA-N 0.000 description 2
- 230000000052 comparative effect Effects 0.000 description 2
- 238000001816 cooling Methods 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 238000009826 distribution Methods 0.000 description 2
- 239000011261 inert gas Substances 0.000 description 2
- 230000003993 interaction Effects 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- 239000012280 lithium aluminium hydride Substances 0.000 description 2
- 229910000103 lithium hydride Inorganic materials 0.000 description 2
- 229920000915 polyvinyl chloride Polymers 0.000 description 2
- 239000004800 polyvinyl chloride Substances 0.000 description 2
- 150000004756 silanes Chemical class 0.000 description 2
- 239000002904 solvent Substances 0.000 description 2
- 229910001220 stainless steel Inorganic materials 0.000 description 2
- 239000010935 stainless steel Substances 0.000 description 2
- 229920005992 thermoplastic resin Polymers 0.000 description 2
- 229920000178 Acrylic resin Polymers 0.000 description 1
- 239000004925 Acrylic resin Substances 0.000 description 1
- 241001474374 Blennius Species 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 229910010082 LiAlH Inorganic materials 0.000 description 1
- 239000004640 Melamine resin Substances 0.000 description 1
- 229920000877 Melamine resin Polymers 0.000 description 1
- 239000004952 Polyamide Substances 0.000 description 1
- 239000004698 Polyethylene Substances 0.000 description 1
- 239000004642 Polyimide Substances 0.000 description 1
- 239000004743 Polypropylene Substances 0.000 description 1
- 239000004793 Polystyrene Substances 0.000 description 1
- 229910003902 SiCl 4 Inorganic materials 0.000 description 1
- 229920001807 Urea-formaldehyde Polymers 0.000 description 1
- 229920000122 acrylonitrile butadiene styrene Polymers 0.000 description 1
- 230000003213 activating effect Effects 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 229920000180 alkyd Polymers 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 150000004945 aromatic hydrocarbons Chemical class 0.000 description 1
- 239000006227 byproduct Substances 0.000 description 1
- 238000003763 carbonization Methods 0.000 description 1
- 238000010000 carbonizing Methods 0.000 description 1
- 239000003518 caustics Substances 0.000 description 1
- 239000004568 cement Substances 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 125000004122 cyclic group Chemical group 0.000 description 1
- 238000007872 degassing Methods 0.000 description 1
- HJXBDPDUCXORKZ-UHFFFAOYSA-N diethylalumane Chemical compound CC[AlH]CC HJXBDPDUCXORKZ-UHFFFAOYSA-N 0.000 description 1
- LIKFHECYJZWXFJ-UHFFFAOYSA-N dimethyldichlorosilane Chemical compound C[Si](C)(Cl)Cl LIKFHECYJZWXFJ-UHFFFAOYSA-N 0.000 description 1
- 239000003822 epoxy resin Substances 0.000 description 1
- 238000011049 filling Methods 0.000 description 1
- 238000005469 granulation Methods 0.000 description 1
- 230000003179 granulation Effects 0.000 description 1
- 239000001307 helium Substances 0.000 description 1
- 229910052734 helium Inorganic materials 0.000 description 1
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 1
- 230000002401 inhibitory effect Effects 0.000 description 1
- 229910010272 inorganic material Inorganic materials 0.000 description 1
- 239000011147 inorganic material Substances 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 239000011229 interlayer Substances 0.000 description 1
- 238000004898 kneading Methods 0.000 description 1
- 229910052743 krypton Inorganic materials 0.000 description 1
- DNNSSWSSYDEUBZ-UHFFFAOYSA-N krypton atom Chemical compound [Kr] DNNSSWSSYDEUBZ-UHFFFAOYSA-N 0.000 description 1
- 230000007257 malfunction Effects 0.000 description 1
- 239000005055 methyl trichlorosilane Substances 0.000 description 1
- JLUFWMXJHAVVNN-UHFFFAOYSA-N methyltrichlorosilane Chemical compound C[Si](Cl)(Cl)Cl JLUFWMXJHAVVNN-UHFFFAOYSA-N 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 229910052754 neon Inorganic materials 0.000 description 1
- GKAOGPIIYCISHV-UHFFFAOYSA-N neon atom Chemical compound [Ne] GKAOGPIIYCISHV-UHFFFAOYSA-N 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 239000003960 organic solvent Substances 0.000 description 1
- 239000005011 phenolic resin Substances 0.000 description 1
- 229920002647 polyamide Polymers 0.000 description 1
- 229920000515 polycarbonate Polymers 0.000 description 1
- 239000004417 polycarbonate Substances 0.000 description 1
- 229920000647 polyepoxide Polymers 0.000 description 1
- 229920000573 polyethylene Polymers 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 229920000098 polyolefin Polymers 0.000 description 1
- 229920001155 polypropylene Polymers 0.000 description 1
- 229920002223 polystyrene Polymers 0.000 description 1
- 239000004810 polytetrafluoroethylene Substances 0.000 description 1
- 229920001343 polytetrafluoroethylene Polymers 0.000 description 1
- 229920002635 polyurethane Polymers 0.000 description 1
- 239000004814 polyurethane Substances 0.000 description 1
- 229920002689 polyvinyl acetate Polymers 0.000 description 1
- 239000011118 polyvinyl acetate Substances 0.000 description 1
- 235000019353 potassium silicate Nutrition 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 238000001953 recrystallisation Methods 0.000 description 1
- 238000001226 reprecipitation Methods 0.000 description 1
- ZFAYZXMSTVMBLX-UHFFFAOYSA-J silicon(4+);tetrachloride Chemical compound [Si+4].[Cl-].[Cl-].[Cl-].[Cl-] ZFAYZXMSTVMBLX-UHFFFAOYSA-J 0.000 description 1
- NTHWMYGWWRZVTN-UHFFFAOYSA-N sodium silicate Chemical compound [Na+].[Na+].[O-][Si]([O-])=O NTHWMYGWWRZVTN-UHFFFAOYSA-N 0.000 description 1
- 229910000679 solder Inorganic materials 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- 238000000859 sublimation Methods 0.000 description 1
- 230000008022 sublimation Effects 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 238000001308 synthesis method Methods 0.000 description 1
- 230000002194 synthesizing effect Effects 0.000 description 1
- 229920006337 unsaturated polyester resin Polymers 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
- 229910052724 xenon Inorganic materials 0.000 description 1
- FHNFHKCVQCLJFQ-UHFFFAOYSA-N xenon atom Chemical compound [Xe] FHNFHKCVQCLJFQ-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
- C07F7/00—Compounds containing elements of Groups 4 or 14 of the Periodic Table
- C07F7/02—Silicon compounds
- C07F7/08—Compounds having one or more C—Si linkages
- C07F7/20—Purification, separation
-
- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
- C07F7/00—Compounds containing elements of Groups 4 or 14 of the Periodic Table
- C07F7/02—Silicon compounds
- C07F7/08—Compounds having one or more C—Si linkages
- C07F7/0896—Compounds with a Si-H linkage
Landscapes
- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Solid-Sorbent Or Filter-Aiding Compositions (AREA)
- Organic Low-Molecular-Weight Compounds And Preparation Thereof (AREA)
- Silicon Compounds (AREA)
- Separation Of Gases By Adsorption (AREA)
Abstract
【解決手段】 (1)少なくとも酸化銅(II)及び酸化亜鉛を添着させた活性炭を準備する工程、(2)トリメチルシランを前記活性炭に吸着させる工程、(3)シラン、メチルシラン、又はジメチルシランを不純物として含むトリメチルシランを前記(2)の工程を終了した活性炭に接触させ、該不純物を吸着させてトリメチルシランから除去する工程、からなるトリメチルシランの精製方法。
【選択図】 なし
Description
本工程に使用する活性炭は、酸化銅(II)及び酸化亜鉛を含む、いわゆる添着活性炭であれば、粉末状、粒状、シート状、破砕状、顆粒状、繊維状等のいずれの形状も使用できる。このような活性炭は市販品として入手できる。充填塔形式で使用する場合には、粒状、破砕状、顆粒状等のものが好ましく使用できる。
本工程では、前記(1)の工程で準備した活性炭にトリメチルシランを吸着させる。この吸着に用いるトリメチルシランは、可能な限り高純度であることが望ましく、少なくとも純度95%以上、より好ましくは純度99.9%以上のトリメチルシランを使用することが好ましい。含まれる不純物については、シラン、メチルシラン、ジメチルシランについては含まれていても構わないが、トリメチルクロロシランのような腐食性を持つ物質は、本発明を実施する為の設備に対しダメージを与えるだけでなく、本発明の精製方法により得られるガスを汚染する可能性があるので、その含有量は1vol%未満であることが好ましい。
本工程では、前記(2)の工程を終了した活性炭に、不純物として、シラン、メチルシラン、又はジメチルシランを含有する、精製対象であるトリメチルシランを接触させる。接触方法としては、ガス状で接触させる方法及び液体で接触する方法があるが、拡散係数が大きなガス状で接触させる方法が効率的である。また、バッチ式、流通式のいずれを用いても良いが、効率よく不純物を除去するためには、流通式が好ましく、中でも、多段のものが優れており、より好ましい。
内径158.4mm×長さ3350mm(活性炭充填高さ:3000mm)のSUS304製チューブ内に、添着により酸化亜鉛と酸化銅を含有した活性炭(日本エンバイロケミカルズ株式会社製 粒状白鷺 XRC410:含有量 Cuとして1〜10wt%、Znとして1〜10wt%)が30kg充填されている充填塔内の充填物を、200℃で1時間真空脱気することにより、該活性炭に付着している水分を脱離した。その後、一度、25℃の室温まで冷却した。
内径158.4mm×長さ3350mm(活性炭充填高さ:3000mm)のSUS304製チューブ内に、実施例1と同じ活性炭が30kg充填されている充填塔内の充填物を、200℃で1時間真空脱気することにより、該活性炭に付着している水分を脱離した。その後、一度、25℃の室温まで冷却した。
内径22.1mm、長さ600mmのステンレス鋼チューブ内に、実施例1と同じ活性炭が62g充填(充填長300mm)されている充填塔内の充填物を、250℃で1時間真空脱気した後室温(25℃)に戻し、該充填塔に、トリメチルシランを窒素ガス(いずれも純度99.999%以上)で希釈倍率を容積比で0.6倍に希釈した混合ガスを、流量0.5slmで、吸着熱による温度上昇が確認できなくなるまで流通させトリメチルシランを吸着させた。
内径22.1mm、長さ600mmのステンレス鋼チューブ内に、実施例1と同じ活性炭が62g充填(充填長300mm)されている充填塔内の充填物を、250℃で1時間真空脱気した後、該充填塔に、トリメチルシランを窒素ガス(それぞれ純度99.999%以上)で希釈倍率を容積比で50倍に希釈した混合ガスを、流量0.5slmで、吸着熱による温度上昇が確認できなくなるまで流通させトリメチルシランを吸着させた。
トリメチルシランを吸着させる処理を実施しない以外は、実施例6と同様の操作を実施した。この間、充填塔の温度は最高で380℃に上昇した。
トリメチルシランを吸着させる処理を実施しない以外は、実施例7と同様の操作を実施した。この間、充填塔の温度は最高で267℃に達した。
Claims (2)
- (1)少なくとも酸化銅(II)及び酸化亜鉛を添着させた活性炭を準備する工程、
(2)トリメチルシランを前記活性炭に吸着させる工程、
(3)シラン、メチルシラン、又はジメチルシランを不純物として含むトリメチルシランを前記(2)の工程を終了した活性炭に接触させ、該不純物を吸着させてトリメチルシランから除去する工程、
からなるトリメチルシランの精製方法。 - (2)の工程において、希釈したトリメチルシランを該活性炭に接触させることにより、トリメチルシランを該活性炭に吸着させることを特徴とする、請求項1に記載のトリメチルシランの精製方法。
Priority Applications (7)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2012034668A JP5861491B2 (ja) | 2012-02-21 | 2012-02-21 | トリメチルシランの精製方法 |
CN201380010463.XA CN104136447B (zh) | 2012-02-21 | 2013-01-16 | 三甲基硅烷的纯化方法 |
US14/380,079 US9073953B2 (en) | 2012-02-21 | 2013-01-16 | Method for refining trimethylsilane |
KR1020147025932A KR101623827B1 (ko) | 2012-02-21 | 2013-01-16 | 트리메틸실란의 정제 방법 |
PCT/JP2013/050639 WO2013125262A1 (ja) | 2012-02-21 | 2013-01-16 | トリメチルシランの精製方法 |
EP13751853.6A EP2818475B1 (en) | 2012-02-21 | 2013-01-16 | Method for refining trimethylsilane |
TW102105882A TWI480284B (zh) | 2012-02-21 | 2013-02-20 | Purification method of trimethylsilane |
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JP2012034668A JP5861491B2 (ja) | 2012-02-21 | 2012-02-21 | トリメチルシランの精製方法 |
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JP2013170139A true JP2013170139A (ja) | 2013-09-02 |
JP5861491B2 JP5861491B2 (ja) | 2016-02-16 |
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Country Status (7)
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US (1) | US9073953B2 (ja) |
EP (1) | EP2818475B1 (ja) |
JP (1) | JP5861491B2 (ja) |
KR (1) | KR101623827B1 (ja) |
CN (1) | CN104136447B (ja) |
TW (1) | TWI480284B (ja) |
WO (1) | WO2013125262A1 (ja) |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
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JP2006117559A (ja) * | 2004-10-20 | 2006-05-11 | Central Glass Co Ltd | トリメチルシランの精製方法 |
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US4824657A (en) | 1985-11-27 | 1989-04-25 | E. I. Du Pont De Nemours And Company | Process for reducing silicon, germanium and tin halides |
US6444013B1 (en) | 2000-09-19 | 2002-09-03 | The Boc Group, Inc. | Purification of methylsilanes |
JP2004115388A (ja) | 2002-09-24 | 2004-04-15 | Mitsui Chemicals Inc | 還元剤およびそれを用いたシラン類の製造方法 |
JP4343660B2 (ja) | 2003-11-26 | 2009-10-14 | セントラル硝子株式会社 | オルガノシランの製造方法 |
JP4498152B2 (ja) | 2005-01-25 | 2010-07-07 | セントラル硝子株式会社 | トリメチルシランの精製方法 |
KR101159674B1 (ko) * | 2009-11-16 | 2012-06-25 | 주식회사 케이씨씨 | 모노실란의 정제방법 |
-
2012
- 2012-02-21 JP JP2012034668A patent/JP5861491B2/ja active Active
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2013
- 2013-01-16 US US14/380,079 patent/US9073953B2/en active Active
- 2013-01-16 CN CN201380010463.XA patent/CN104136447B/zh active Active
- 2013-01-16 WO PCT/JP2013/050639 patent/WO2013125262A1/ja active Application Filing
- 2013-01-16 KR KR1020147025932A patent/KR101623827B1/ko active IP Right Grant
- 2013-01-16 EP EP13751853.6A patent/EP2818475B1/en not_active Not-in-force
- 2013-02-20 TW TW102105882A patent/TWI480284B/zh active
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
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JP2006117559A (ja) * | 2004-10-20 | 2006-05-11 | Central Glass Co Ltd | トリメチルシランの精製方法 |
Also Published As
Publication number | Publication date |
---|---|
CN104136447B (zh) | 2016-04-13 |
KR20140123109A (ko) | 2014-10-21 |
EP2818475A4 (en) | 2015-08-26 |
WO2013125262A1 (ja) | 2013-08-29 |
JP5861491B2 (ja) | 2016-02-16 |
EP2818475B1 (en) | 2016-08-31 |
KR101623827B1 (ko) | 2016-05-24 |
CN104136447A (zh) | 2014-11-05 |
EP2818475A1 (en) | 2014-12-31 |
TW201339167A (zh) | 2013-10-01 |
TWI480284B (zh) | 2015-04-11 |
US9073953B2 (en) | 2015-07-07 |
US20150119596A1 (en) | 2015-04-30 |
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