JP2013168437A - 成膜装置 - Google Patents
成膜装置 Download PDFInfo
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- 230000015572 biosynthetic process Effects 0.000 title abstract description 5
- 239000007789 gas Substances 0.000 claims abstract description 251
- 238000002347 injection Methods 0.000 claims abstract description 95
- 239000007924 injection Substances 0.000 claims abstract description 95
- 239000000758 substrate Substances 0.000 claims abstract description 86
- 238000012545 processing Methods 0.000 claims abstract description 67
- 239000002243 precursor Substances 0.000 claims abstract description 55
- 238000010926 purge Methods 0.000 claims abstract description 38
- 239000012495 reaction gas Substances 0.000 claims abstract description 20
- 238000013459 approach Methods 0.000 claims description 9
- 230000008021 deposition Effects 0.000 claims 1
- 239000012528 membrane Substances 0.000 claims 1
- 239000000243 solution Substances 0.000 abstract description 2
- 239000010408 film Substances 0.000 description 80
- 238000007789 sealing Methods 0.000 description 18
- 238000000034 method Methods 0.000 description 14
- 230000008569 process Effects 0.000 description 8
- 239000004020 conductor Substances 0.000 description 6
- 238000001816 cooling Methods 0.000 description 6
- 229910052751 metal Inorganic materials 0.000 description 6
- 239000002184 metal Substances 0.000 description 6
- 230000006870 function Effects 0.000 description 5
- 238000005121 nitriding Methods 0.000 description 5
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 4
- 230000007246 mechanism Effects 0.000 description 4
- MROCJMGDEKINLD-UHFFFAOYSA-N dichlorosilane Chemical compound Cl[SiH2]Cl MROCJMGDEKINLD-UHFFFAOYSA-N 0.000 description 3
- 230000009545 invasion Effects 0.000 description 3
- 239000010409 thin film Substances 0.000 description 3
- 238000012546 transfer Methods 0.000 description 3
- PNEYBMLMFCGWSK-UHFFFAOYSA-N Alumina Chemical compound [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 2
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 2
- 239000000470 constituent Substances 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 229910052757 nitrogen Inorganic materials 0.000 description 2
- 230000000149 penetrating effect Effects 0.000 description 2
- 238000009832 plasma treatment Methods 0.000 description 2
- 238000003672 processing method Methods 0.000 description 2
- 230000000644 propagated effect Effects 0.000 description 2
- 238000000926 separation method Methods 0.000 description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 238000000231 atomic layer deposition Methods 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- FFBHFFJDDLITSX-UHFFFAOYSA-N benzyl N-[2-hydroxy-4-(3-oxomorpholin-4-yl)phenyl]carbamate Chemical compound OC1=C(NC(=O)OCC2=CC=CC=C2)C=CC(=C1)N1CCOCC1=O FFBHFFJDDLITSX-UHFFFAOYSA-N 0.000 description 1
- 239000002826 coolant Substances 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- 238000006073 displacement reaction Methods 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 230000001902 propagating effect Effects 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 238000001179 sorption measurement Methods 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
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- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
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- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/3244—Gas supply means
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- C—CHEMISTRY; METALLURGY
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- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45523—Pulsed gas flow or change of composition over time
- C23C16/45525—Atomic layer deposition [ALD]
- C23C16/45527—Atomic layer deposition [ALD] characterized by the ALD cycle, e.g. different flows or temperatures during half-reactions, unusual pulsing sequence, use of precursor mixtures or auxiliary reactants or activations
- C23C16/45536—Use of plasma, radiation or electromagnetic fields
- C23C16/45542—Plasma being used non-continuously during the ALD reactions
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- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45523—Pulsed gas flow or change of composition over time
- C23C16/45525—Atomic layer deposition [ALD]
- C23C16/45544—Atomic layer deposition [ALD] characterized by the apparatus
- C23C16/45548—Atomic layer deposition [ALD] characterized by the apparatus having arrangements for gas injection at different locations of the reactor for each ALD half-reaction
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- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32798—Further details of plasma apparatus not provided for in groups H01J37/3244 - H01J37/32788; special provisions for cleaning or maintenance of the apparatus
- H01J37/32816—Pressure
- H01J37/32834—Exhausting
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
- H01L21/0217—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material being a silicon nitride not containing oxygen, e.g. SixNy or SixByNz
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
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- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
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- H01L21/02271—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
- H01L21/02274—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition in the presence of a plasma [PECVD]
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- H01L21/02107—Forming insulating materials on a substrate
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- H01L21/02271—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
- H01L21/0228—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition deposition by cyclic CVD, e.g. ALD, ALE, pulsed CVD
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Abstract
【解決手段】載置台が軸線中心に回転可能に設けられている。載置台を収容する処理室は第1の領域及び第2の領域を含む。載置台の回転に伴い当該載置台の基板載置領域が軸線に対して周方向に移動して第1の領域及び第2の領域を順に通過する。第1のガス供給部は、載置台に対面するように設けられた噴射部から第1の領域に前駆体ガスを供給する。排気部は、噴射部の周囲を囲む閉路に沿って延在するように形成された排気口から排気を行う。第2のガス供給部は、排気口の周囲を囲む閉路に沿って延在するように形成された噴射口からパージガスを供給する。プラズマ生成部は、第2の領域において反応ガスのプラズマを生成する。この成膜装置では、第1の領域が前記軸線に対して周方向に延在する角度範囲よりも、第2の領域が前記軸線に対して周方向に延在する角度範囲が大きい。
【選択図】図1
Description
成膜装置10により基板Wを処理する場合には、まず、ロボットアームといった搬送装置により、Si基板Wが、ゲートバルブGを介して載置台14の基板載置領域14a上に搬送される。そして、載置台14が駆動機構24により回転され、基板Wが載置されている基板載置領域14aが第2の領域R2を基点として回転移動される。
次いで、基板Wが窒化される。具体的には、第3のガス供給部22bにより第2の領域R2に窒素を含む反応ガスが供給され、マイクロ波発生器48からのマイクロ波がアンテナ22aを介して第2の領域R2に供給される。これにより、第2の領域R2では反応ガスのプラズマが生成される。この反応ガスのプラズマにより、基板Wの表面が窒化される。
次いで、載置台14の回転に伴い、基板Wは第1の領域R1内に移動する。第1の領域R1においては、DCSといった前駆体ガスが第1のガス供給部16によって供給されている。これにより、前駆体ガスに含まれるSiが基板W上に化学的に又は物理的に吸着される。
次いで、載置台14の回転に伴い、基板Wは第1の領域R1と第2の領域R2との間を通過する。このとき、基板Wは、第2のガス供給部20によって供給されるパージガスに晒される。これにより、基板Wに過剰に化学吸着しているSiを含有する前駆体ガスが取り除かれる。
次いで、載置台14の回転に伴い、基板Wは第2の領域R2内に移動する。第2の領域R2には、第3のガス供給部22bにより窒素を含む反応ガスが供給され、マイクロ波発生器48からのマイクロ波がアンテナ22aを介して供給されている。したがって、第2の領域R2には反応ガスのプラズマが生成されている。この反応ガスのプラズマにより、基板Wの表面に化学吸着した前駆体ガスが窒化される。
<図12>
・ギャップGHの長さWA:2mm
・排気口18aと噴射口20aの距離WA:35mm
<図13>
・ギャップGHの長さWA:3mm
・排気口18aと噴射口20aの距離WA:35mm
<図14>
・ギャップGHの長さWA:2mm
・排気口18aと噴射口20aの距離WA:4mm
<図15>
・ギャップGHの長さWA:2mm
・排気口18aと噴射口20aの距離WA:20mm
Claims (7)
- 基板載置領域を有し、該基板載置領域が周方向に移動するよう軸線中心に回転可能に設けられた載置台と、
前記載置台を収容する処理室であり、前記載置台の回転により前記軸線に対して周方向に移動する前記基板載置領域が順に通過する第1の領域及び第2の領域を含む該処理室を画成する処理容器と、
前記載置台に対面するように設けられた噴射部から前記第1の領域に前駆体ガスを供給する第1のガス供給部と、
前記噴射部の周囲を囲む閉路に沿って延在するように形成された排気口から排気を行う排気部と、
前記排気口の周囲を囲む閉路に沿って延在するように形成された噴射口からパージガスを供給する第2のガス供給部と、
前記第2の領域において反応ガスのプラズマを生成するプラズマ生成部と、
を備え、
前記第1の領域が前記軸線に対して周方向に延在する角度範囲よりも、前記第2の領域が前記軸線に対して周方向に延在する角度範囲が大きい、
成膜装置。 - 前記噴射部と前記プラズマ生成部との間において延在する前記噴射口及び前記排気口の幅は、前記基板載置領域の直径よりも小さい、請求項1に記載の成膜装置。
- 前記噴射部は複数の噴射口を提供しており、
前記複数の噴射口は、前記軸線に近づくにつれて互いに近づく二つの縁部の間にわたって分布している、
請求項1又は2に記載の成膜装置。 - 前記プラズマ生成部は、
前記第2の領域に反応ガスを供給する第3のガス供給部と、
前記第2の領域にマイクロ波を供給する一以上のアンテナと、
を有し、
前記一以上のアンテナの各々は、
前記第2の領域を介して前記載置台と対面するように設けられた誘電体板と、
前記誘電体板上に設けられた一以上の導波管であり、前記誘電体板に向けてマイクロ波を通過させるスロットが形成された該一以上の導波管と、
を含み、
前記誘電体板は前記第2の領域に面した誘電体窓を有し、該誘電体窓は、前記軸線に交差する方向に延在し前記軸線に近づくにつれて互いに近づく二つの縁部を含む、
請求項1〜3の何れか一項に記載の成膜装置。 - 前記プラズマ生成部は、前記周方向に配列された複数のアンテナを前記一以上のアンテナとして有する、請求項4に記載の成膜装置。
- 前記プラズマ生成部は、単一のアンテナを前記一以上のアンテナとして有し、
前記単一のアンテナは、単一の前記誘電体板上に設けられ、且つ、周方向に配列された複数の導波管を前記一以上の導波管として備える、請求項4に記載の成膜装置。 - 前記排気口と前記第2のガス供給部の前記噴射口から前記載置台との間にはギャップが設けられており、
前記排気口と前記第2のガス供給部の前記噴射口との間の距離は、前記ギャップの長さの10倍以上である、
請求項1〜6の何れか一項に記載の成膜装置。
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JP2012029744A JP5882777B2 (ja) | 2012-02-14 | 2012-02-14 | 成膜装置 |
TW102105461A TWI570268B (zh) | 2012-02-14 | 2013-02-08 | Film forming device |
KR1020147022711A KR101660615B1 (ko) | 2012-02-14 | 2013-02-12 | 성막 장치 |
PCT/JP2013/053233 WO2013122043A1 (ja) | 2012-02-14 | 2013-02-12 | 成膜装置 |
US14/378,365 US10513777B2 (en) | 2012-02-14 | 2013-02-12 | Film formation device |
CN201380009061.8A CN104115261B (zh) | 2012-02-14 | 2013-02-12 | 成膜装置 |
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JP2012029744A JP5882777B2 (ja) | 2012-02-14 | 2012-02-14 | 成膜装置 |
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JP2013168437A true JP2013168437A (ja) | 2013-08-29 |
JP5882777B2 JP5882777B2 (ja) | 2016-03-09 |
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US (1) | US10513777B2 (ja) |
JP (1) | JP5882777B2 (ja) |
KR (1) | KR101660615B1 (ja) |
CN (1) | CN104115261B (ja) |
TW (1) | TWI570268B (ja) |
WO (1) | WO2013122043A1 (ja) |
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WO2013122043A1 (ja) | 2013-08-22 |
KR101660615B1 (ko) | 2016-09-27 |
JP5882777B2 (ja) | 2016-03-09 |
US20150007774A1 (en) | 2015-01-08 |
CN104115261B (zh) | 2017-03-15 |
KR20140123532A (ko) | 2014-10-22 |
US10513777B2 (en) | 2019-12-24 |
TWI570268B (zh) | 2017-02-11 |
TW201350619A (zh) | 2013-12-16 |
CN104115261A (zh) | 2014-10-22 |
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