JP2013153217A5 - - Google Patents

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Publication number
JP2013153217A5
JP2013153217A5 JP2013088605A JP2013088605A JP2013153217A5 JP 2013153217 A5 JP2013153217 A5 JP 2013153217A5 JP 2013088605 A JP2013088605 A JP 2013088605A JP 2013088605 A JP2013088605 A JP 2013088605A JP 2013153217 A5 JP2013153217 A5 JP 2013153217A5
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JP
Japan
Prior art keywords
array
targets
target
wafer
calibration curve
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JP2013088605A
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English (en)
Japanese (ja)
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JP2013153217A (ja
JP5813692B2 (ja
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Priority claimed from US11/329,716 external-priority patent/US7526749B2/en
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Publication of JP2013153217A5 publication Critical patent/JP2013153217A5/ja
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Publication of JP5813692B2 publication Critical patent/JP5813692B2/ja
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JP2013088605A 2005-10-31 2013-04-19 オーバレイ測定用の目盛校正曲線を生成する方法 Active JP5813692B2 (ja)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US73243305P 2005-10-31 2005-10-31
US60/732,433 2005-10-31
US11/329,716 US7526749B2 (en) 2005-10-31 2006-01-10 Methods and apparatus for designing and using micro-targets in overlay metrology
US11/329,716 2006-01-10

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
JP2008537884A Division JP5443759B2 (ja) 2005-10-31 2006-10-23 オーバレイ測定におけるマイクロターゲットの設計と使用のための方法と装置

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2014202977A Division JP6042396B2 (ja) 2005-10-31 2014-10-01 半導体のオーバーレイターゲットからオーバーレイを決定するシステム，その方法およびコンピュータプログラム

Publications (3)

Publication Number Publication Date
JP2013153217A JP2013153217A (ja) 2013-08-08
JP2013153217A5 true JP2013153217A5 (https=) 2013-09-26
JP5813692B2 JP5813692B2 (ja) 2015-11-17

Family

ID=37995066

Family Applications (3)

Application Number Title Priority Date Filing Date
JP2008537884A Active JP5443759B2 (ja) 2005-10-31 2006-10-23 オーバレイ測定におけるマイクロターゲットの設計と使用のための方法と装置
JP2013088605A Active JP5813692B2 (ja) 2005-10-31 2013-04-19 オーバレイ測定用の目盛校正曲線を生成する方法
JP2014202977A Active JP6042396B2 (ja) 2005-10-31 2014-10-01 半導体のオーバーレイターゲットからオーバーレイを決定するシステム，その方法およびコンピュータプログラム

Family Applications Before (1)

Application Number Title Priority Date Filing Date
JP2008537884A Active JP5443759B2 (ja) 2005-10-31 2006-10-23 オーバレイ測定におけるマイクロターゲットの設計と使用のための方法と装置

Family Applications After (1)

Application Number Title Priority Date Filing Date
JP2014202977A Active JP6042396B2 (ja) 2005-10-31 2014-10-01 半導体のオーバーレイターゲットからオーバーレイを決定するシステム，その方法およびコンピュータプログラム

Country Status (5)

Country Link
US (1) US7526749B2 (https=)
EP (1) EP1946372B1 (https=)
JP (3) JP5443759B2 (https=)
TW (2) TWI411055B (https=)
WO (1) WO2007053376A2 (https=)

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DE102007046850B4 (de) * 2007-09-29 2014-05-22 Globalfoundries Dresden Module One Limited Liability Company & Co. Kg Verfahren zum Bestimmen einer Überlagerungsgenauigkeit
US8060843B2 (en) * 2008-06-18 2011-11-15 Taiwan Semiconductor Manufacturing Company, Ltd. Verification of 3D integrated circuits
US9927718B2 (en) 2010-08-03 2018-03-27 Kla-Tencor Corporation Multi-layer overlay metrology target and complimentary overlay metrology measurement systems
US10890436B2 (en) * 2011-07-19 2021-01-12 Kla Corporation Overlay targets with orthogonal underlayer dummyfill
US9007585B2 (en) * 2012-03-07 2015-04-14 Kla-Tencor Corporation Imaging overlay metrology target and complimentary overlay metrology measurement system
CN103814429A (zh) * 2012-05-22 2014-05-21 科磊股份有限公司 具有正交底层虚拟填充的叠盖目标
US9576861B2 (en) * 2012-11-20 2017-02-21 Kla-Tencor Corporation Method and system for universal target based inspection and metrology
US9429856B1 (en) 2013-01-21 2016-08-30 Kla-Tencor Corporation Detectable overlay targets with strong definition of center locations
US9104831B2 (en) * 2013-08-23 2015-08-11 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor overlay production system and method
US9727047B2 (en) * 2014-10-14 2017-08-08 Kla-Tencor Corp. Defect detection using structural information
CN107533020B (zh) * 2015-04-28 2020-08-14 科磊股份有限公司 计算上高效的基于x射线的叠盖测量系统与方法
WO2016202560A1 (en) * 2015-06-18 2016-12-22 Asml Netherlands B.V. Calibration method for a lithographic apparatus
US9864280B2 (en) * 2015-10-02 2018-01-09 Applied Materials, Inc. Overlay error correction
US10303839B2 (en) * 2016-06-07 2019-05-28 Kla-Tencor Corporation Electrically relevant placement of metrology targets using design analysis
EP3891558A1 (en) * 2018-12-03 2021-10-13 ASML Netherlands B.V. Method to predict yield of a semiconductor manufacturing process
WO2020141071A1 (en) * 2018-12-31 2020-07-09 Asml Netherlands B.V. Method for calibrating a scanning charged particle microscope
EP3971648A1 (en) 2020-09-17 2022-03-23 ASML Netherlands B.V. Mark to be projected on an object durign a lithograhpic process and method for designing a mark

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JPS6450529A (en) * 1987-08-21 1989-02-27 Oki Electric Ind Co Ltd Wafer alignment
JPH0231411A (ja) * 1988-07-21 1990-02-01 Mitsubishi Electric Corp 半導体装置のアライメントマークの形成方法
JP2663623B2 (ja) * 1989-01-30 1997-10-15 住友金属工業株式会社 レジストパターンの形成方法
JPH0562874A (ja) * 1991-09-05 1993-03-12 Fujitsu Ltd 半導体装置の製造方法
JPH0658730A (ja) * 1992-08-06 1994-03-04 Nikon Corp 重ね合わせ精度測定方法
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US7317531B2 (en) * 2002-12-05 2008-01-08 Kla-Tencor Technologies Corporation Apparatus and methods for detecting overlay errors using scatterometry
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US7526749B2 (en) * 2005-10-31 2009-04-28 Kla-Tencor Technologies Corporation Methods and apparatus for designing and using micro-targets in overlay metrology

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