JP2013151722A - 半導体装置の製造方法 - Google Patents
半導体装置の製造方法 Download PDFInfo
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- JP2013151722A JP2013151722A JP2012013110A JP2012013110A JP2013151722A JP 2013151722 A JP2013151722 A JP 2013151722A JP 2012013110 A JP2012013110 A JP 2012013110A JP 2012013110 A JP2012013110 A JP 2012013110A JP 2013151722 A JP2013151722 A JP 2013151722A
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- gas
- processing chamber
- valve
- aluminum
- titanium
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- 238000000034 method Methods 0.000 title claims abstract description 41
- 239000004065 semiconductor Substances 0.000 title claims abstract description 15
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 11
- 229910052782 aluminium Inorganic materials 0.000 claims abstract description 91
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims abstract description 91
- 239000002994 raw material Substances 0.000 claims abstract description 62
- 239000010936 titanium Substances 0.000 claims abstract description 59
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims abstract description 57
- 229910052719 titanium Inorganic materials 0.000 claims abstract description 57
- 239000000758 substrate Substances 0.000 claims abstract description 48
- QJGQUHMNIGDVPM-UHFFFAOYSA-N nitrogen group Chemical group [N] QJGQUHMNIGDVPM-UHFFFAOYSA-N 0.000 claims abstract description 34
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 abstract description 34
- 239000007789 gas Substances 0.000 description 293
- XJDNKRIXUMDJCW-UHFFFAOYSA-J titanium tetrachloride Chemical compound Cl[Ti](Cl)(Cl)Cl XJDNKRIXUMDJCW-UHFFFAOYSA-J 0.000 description 96
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 57
- 239000010408 film Substances 0.000 description 56
- 239000011261 inert gas Substances 0.000 description 54
- 235000012431 wafers Nutrition 0.000 description 49
- 239000012159 carrier gas Substances 0.000 description 28
- 238000011144 upstream manufacturing Methods 0.000 description 18
- 238000010586 diagram Methods 0.000 description 12
- 230000005587 bubbling Effects 0.000 description 11
- 239000007788 liquid Substances 0.000 description 10
- 238000010926 purge Methods 0.000 description 10
- 239000000203 mixture Substances 0.000 description 8
- 230000015572 biosynthetic process Effects 0.000 description 6
- 238000005229 chemical vapour deposition Methods 0.000 description 6
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 5
- VSCWAEJMTAWNJL-UHFFFAOYSA-K aluminium trichloride Chemical compound Cl[Al](Cl)Cl VSCWAEJMTAWNJL-UHFFFAOYSA-K 0.000 description 5
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 4
- 230000004048 modification Effects 0.000 description 4
- 238000012986 modification Methods 0.000 description 4
- 229910021529 ammonia Inorganic materials 0.000 description 3
- 238000000151 deposition Methods 0.000 description 3
- 230000008021 deposition Effects 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 238000010438 heat treatment Methods 0.000 description 3
- 239000001307 helium Substances 0.000 description 3
- 229910052734 helium Inorganic materials 0.000 description 3
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 150000004767 nitrides Chemical class 0.000 description 3
- 238000005121 nitriding Methods 0.000 description 3
- 238000007789 sealing Methods 0.000 description 3
- 239000010409 thin film Substances 0.000 description 3
- GQPLMRYTRLFLPF-UHFFFAOYSA-N Nitrous Oxide Chemical compound [O-][N+]#N GQPLMRYTRLFLPF-UHFFFAOYSA-N 0.000 description 2
- 229910052786 argon Inorganic materials 0.000 description 2
- 239000003990 capacitor Substances 0.000 description 2
- 238000001514 detection method Methods 0.000 description 2
- 239000007772 electrode material Substances 0.000 description 2
- 230000001965 increasing effect Effects 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 239000012528 membrane Substances 0.000 description 2
- 229910052754 neon Inorganic materials 0.000 description 2
- GKAOGPIIYCISHV-UHFFFAOYSA-N neon atom Chemical compound [Ne] GKAOGPIIYCISHV-UHFFFAOYSA-N 0.000 description 2
- 229910052757 nitrogen Inorganic materials 0.000 description 2
- 238000001179 sorption measurement Methods 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- JLTRXTDYQLMHGR-UHFFFAOYSA-N trimethylaluminium Chemical compound C[Al](C)C JLTRXTDYQLMHGR-UHFFFAOYSA-N 0.000 description 2
- 230000008016 vaporization Effects 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 239000007795 chemical reaction product Substances 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 230000003028 elevating effect Effects 0.000 description 1
- -1 for example Chemical compound 0.000 description 1
- 230000006870 function Effects 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- HDZGCSFEDULWCS-UHFFFAOYSA-N monomethylhydrazine Chemical compound CNN HDZGCSFEDULWCS-UHFFFAOYSA-N 0.000 description 1
- 239000001272 nitrous oxide Substances 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
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- Chemical Vapour Deposition (AREA)
- Electrodes Of Semiconductors (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2012013110A JP2013151722A (ja) | 2012-01-25 | 2012-01-25 | 半導体装置の製造方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2012013110A JP2013151722A (ja) | 2012-01-25 | 2012-01-25 | 半導体装置の製造方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2013151722A true JP2013151722A (ja) | 2013-08-08 |
| JP2013151722A5 JP2013151722A5 (enrdf_load_stackoverflow) | 2015-03-05 |
Family
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2012013110A Pending JP2013151722A (ja) | 2012-01-25 | 2012-01-25 | 半導体装置の製造方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2013151722A (enrdf_load_stackoverflow) |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105039929A (zh) * | 2014-05-01 | 2015-11-11 | 东京毅力科创株式会社 | 成膜方法和成膜装置 |
| JPWO2017037927A1 (ja) * | 2015-09-03 | 2018-07-05 | 株式会社日立国際電気 | 半導体装置の製造方法、基板処理装置および記録媒体 |
| JP2020074367A (ja) * | 2019-09-17 | 2020-05-14 | 株式会社Ｋｏｋｕｓａｉ Ｅｌｅｃｔｒｉｃ | 半導体装置の製造方法、基板処理装置およびプログラム |
| KR20210047119A (ko) * | 2019-10-21 | 2021-04-29 | 삼성전자주식회사 | 금속 질화막 제조방법 및 금속 질화막을 포함하는 전자 소자 |
| CN113314670A (zh) * | 2020-02-26 | 2021-08-27 | 三星电子株式会社 | 电容器、包括其的半导体器件和电子设备、以及制造电容器的方法 |
| US11967500B2 (en) | 2016-03-29 | 2024-04-23 | Kokusai Electric Corporation | Method of manufacturing semiconductor device, substrate processing apparatus, and recording medium |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH06314660A (ja) * | 1993-03-04 | 1994-11-08 | Mitsubishi Electric Corp | 薄膜形成法及びその装置 |
| JP2001303251A (ja) * | 2000-04-20 | 2001-10-31 | Samsung Electronics Co Ltd | 原子層蒸着方法を利用した障壁金属膜の製造方法 |
| JP2003077864A (ja) * | 2001-09-03 | 2003-03-14 | Tokyo Electron Ltd | 成膜方法 |
| JP2004263207A (ja) * | 2003-02-20 | 2004-09-24 | Tokyo Electron Ltd | 成膜方法 |
| JP2011132568A (ja) * | 2009-12-24 | 2011-07-07 | Hitachi Kokusai Electric Inc | 半導体装置の製造方法および基板処理装置 |
-
2012
- 2012-01-25 JP JP2012013110A patent/JP2013151722A/ja active Pending
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH06314660A (ja) * | 1993-03-04 | 1994-11-08 | Mitsubishi Electric Corp | 薄膜形成法及びその装置 |
| JP2001303251A (ja) * | 2000-04-20 | 2001-10-31 | Samsung Electronics Co Ltd | 原子層蒸着方法を利用した障壁金属膜の製造方法 |
| JP2003077864A (ja) * | 2001-09-03 | 2003-03-14 | Tokyo Electron Ltd | 成膜方法 |
| JP2004263207A (ja) * | 2003-02-20 | 2004-09-24 | Tokyo Electron Ltd | 成膜方法 |
| JP2011132568A (ja) * | 2009-12-24 | 2011-07-07 | Hitachi Kokusai Electric Inc | 半導体装置の製造方法および基板処理装置 |
Cited By (24)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105039929A (zh) * | 2014-05-01 | 2015-11-11 | 东京毅力科创株式会社 | 成膜方法和成膜装置 |
| JP2015213108A (ja) * | 2014-05-01 | 2015-11-26 | 東京エレクトロン株式会社 | 成膜方法及び成膜装置 |
| KR101933260B1 (ko) * | 2014-05-01 | 2018-12-27 | 도쿄엘렉트론가부시키가이샤 | 성막 방법 및 성막 장치 |
| CN105039929B (zh) * | 2014-05-01 | 2019-08-20 | 东京毅力科创株式会社 | 成膜方法和成膜装置 |
| JPWO2017037927A1 (ja) * | 2015-09-03 | 2018-07-05 | 株式会社日立国際電気 | 半導体装置の製造方法、基板処理装置および記録媒体 |
| US20180190496A1 (en) * | 2015-09-03 | 2018-07-05 | Hitachi Kokusai Electric Inc. | Method of manufacturing semiconductor device, substrate processing apparatus, recording medium, and supply system |
| US10361084B2 (en) | 2015-09-03 | 2019-07-23 | Kokusai Electric Corporation | Method of manufacturing semiconductor device, substrate processing apparatus, recording medium, and supply system |
| US11967500B2 (en) | 2016-03-29 | 2024-04-23 | Kokusai Electric Corporation | Method of manufacturing semiconductor device, substrate processing apparatus, and recording medium |
| JP2020074367A (ja) * | 2019-09-17 | 2020-05-14 | 株式会社Ｋｏｋｕｓａｉ Ｅｌｅｃｔｒｉｃ | 半導体装置の製造方法、基板処理装置およびプログラム |
| US11810946B2 (en) | 2019-10-21 | 2023-11-07 | Samsung Electronics Co., Ltd. | Integrated circuit device including capacitor with metal nitrate interfacial layer |
| JP7279003B2 (ja) | 2019-10-21 | 2023-05-22 | 三星電子株式会社 | 金属窒化膜の製造方法、及び金属窒化膜を含む電子素子 |
| KR102796863B1 (ko) * | 2019-10-21 | 2025-04-17 | 삼성전자주식회사 | 금속 질화막 제조방법 및 금속 질화막을 포함하는 전자 소자 |
| CN112768436B (zh) * | 2019-10-21 | 2024-07-02 | 三星电子株式会社 | 电容器、存储装置、电子装置和金属氮化物膜制造方法 |
| US11424317B2 (en) | 2019-10-21 | 2022-08-23 | Samsung Electronics Co., Ltd. | Method of manufacturing metal nitride film and electronic device including metal nitride film |
| KR20210047119A (ko) * | 2019-10-21 | 2021-04-29 | 삼성전자주식회사 | 금속 질화막 제조방법 및 금속 질화막을 포함하는 전자 소자 |
| JP2021068894A (ja) * | 2019-10-21 | 2021-04-30 | 三星電子株式会社Ｓａｍｓｕｎｇ Ｅｌｅｃｔｒｏｎｉｃｓ Ｃｏ．，Ｌｔｄ． | 金属窒化膜の製造方法、及び金属窒化膜を含む電子素子 |
| CN112768436A (zh) * | 2019-10-21 | 2021-05-07 | 三星电子株式会社 | 电容器、存储装置、电子装置和金属氮化物膜制造方法 |
| US11798980B2 (en) | 2019-10-21 | 2023-10-24 | Samsung Electronics Co., Ltd. | Integrated circuit device and electronic device including capacitor with interfacial layer containing metal element, other element, nitrogen, and oxygen |
| US11594592B2 (en) | 2020-02-26 | 2023-02-28 | Samsung Electronics Co., Ltd. | Capacitor, semiconductor device including the same, and method of fabricating capacitor |
| JP7179109B2 (ja) | 2020-02-26 | 2022-11-28 | 三星電子株式会社 | キャパシタ、それを含む半導体装置、及びキャパシタ製造方法 |
| US11978761B2 (en) | 2020-02-26 | 2024-05-07 | Samsung Electronics Co., Ltd. | Capacitor, semiconductor device including the same, and method of fabricating capacitor |
| JP2021136451A (ja) * | 2020-02-26 | 2021-09-13 | 三星電子株式会社Samsung Electronics Co., Ltd. | キャパシタ、それを含む半導体装置、及びキャパシタ製造方法 |
| US12068360B2 (en) | 2020-02-26 | 2024-08-20 | Samsung Electronics Co., Ltd. | Capacitor, semiconductor device including the same, and method of fabricating capacitor |
| CN113314670A (zh) * | 2020-02-26 | 2021-08-27 | 三星电子株式会社 | 电容器、包括其的半导体器件和电子设备、以及制造电容器的方法 |
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