JP2013151722A5 - - Google Patents
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- Publication number
- JP2013151722A5 JP2013151722A5 JP2012013110A JP2012013110A JP2013151722A5 JP 2013151722 A5 JP2013151722 A5 JP 2013151722A5 JP 2012013110 A JP2012013110 A JP 2012013110A JP 2012013110 A JP2012013110 A JP 2012013110A JP 2013151722 A5 JP2013151722 A5 JP 2013151722A5
- Authority
- JP
- Japan
- Prior art keywords
- aluminum
- titanium
- raw material
- substrate
- supplying
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims 13
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims 13
- 229910052782 aluminium Inorganic materials 0.000 claims 13
- 239000002994 raw material Substances 0.000 claims 13
- 229910052719 titanium Inorganic materials 0.000 claims 13
- 239000010936 titanium Substances 0.000 claims 13
- 239000000463 material Substances 0.000 claims 12
- 239000000758 substrate Substances 0.000 claims 9
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims 8
- 238000004519 manufacturing process Methods 0.000 claims 5
- 239000004065 semiconductor Substances 0.000 claims 5
- 229910052757 nitrogen Inorganic materials 0.000 claims 4
- 238000000034 method Methods 0.000 claims 3
- QJGQUHMNIGDVPM-UHFFFAOYSA-N nitrogen group Chemical group [N] QJGQUHMNIGDVPM-UHFFFAOYSA-N 0.000 claims 2
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2012013110A JP2013151722A (ja) | 2012-01-25 | 2012-01-25 | 半導体装置の製造方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2012013110A JP2013151722A (ja) | 2012-01-25 | 2012-01-25 | 半導体装置の製造方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2013151722A JP2013151722A (ja) | 2013-08-08 |
| JP2013151722A5 true JP2013151722A5 (enrdf_load_stackoverflow) | 2015-03-05 |
Family
ID=49048289
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2012013110A Pending JP2013151722A (ja) | 2012-01-25 | 2012-01-25 | 半導体装置の製造方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2013151722A (enrdf_load_stackoverflow) |
Families Citing this family (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP6243290B2 (ja) * | 2014-05-01 | 2017-12-06 | 東京エレクトロン株式会社 | 成膜方法及び成膜装置 |
| WO2017037927A1 (ja) * | 2015-09-03 | 2017-03-09 | 株式会社日立国際電気 | 半導体装置の製造方法、基板処理装置および記録媒体 |
| KR20220165790A (ko) | 2016-03-29 | 2022-12-15 | 가부시키가이샤 코쿠사이 엘렉트릭 | 반도체 장치의 제조 방법, 기판 처리 장치 및 프로그램 |
| JP6826173B2 (ja) * | 2019-09-17 | 2021-02-03 | 株式会社Ｋｏｋｕｓａｉ Ｅｌｅｃｔｒｉｃ | 半導体装置の製造方法、基板処理装置およびプログラム |
| KR102796863B1 (ko) * | 2019-10-21 | 2025-04-17 | 삼성전자주식회사 | 금속 질화막 제조방법 및 금속 질화막을 포함하는 전자 소자 |
| KR102792553B1 (ko) | 2020-02-26 | 2025-04-08 | 삼성전자주식회사 | 커패시터, 이를 포함하는 반도체 장치. 및 커패시터 제조 방법 |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH06314660A (ja) * | 1993-03-04 | 1994-11-08 | Mitsubishi Electric Corp | 薄膜形成法及びその装置 |
| KR100363088B1 (ko) * | 2000-04-20 | 2002-12-02 | 삼성전자 주식회사 | 원자층 증착방법을 이용한 장벽 금속막의 제조방법 |
| JP4178776B2 (ja) * | 2001-09-03 | 2008-11-12 | 東京エレクトロン株式会社 | 成膜方法 |
| JP4214795B2 (ja) * | 2003-02-20 | 2009-01-28 | 東京エレクトロン株式会社 | 成膜方法 |
| JP2011132568A (ja) * | 2009-12-24 | 2011-07-07 | Hitachi Kokusai Electric Inc | 半導体装置の製造方法および基板処理装置 |
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2012
- 2012-01-25 JP JP2012013110A patent/JP2013151722A/ja active Pending