JP2013151722A5 - - Google Patents
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- JP2013151722A5 JP2013151722A5 JP2012013110A JP2012013110A JP2013151722A5 JP 2013151722 A5 JP2013151722 A5 JP 2013151722A5 JP 2012013110 A JP2012013110 A JP 2012013110A JP 2012013110 A JP2012013110 A JP 2012013110A JP 2013151722 A5 JP2013151722 A5 JP 2013151722A5
- Authority
- JP
- Japan
- Prior art keywords
- aluminum
- titanium
- raw material
- substrate
- supplying
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
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- 229910052782 aluminium Inorganic materials 0.000 claims 13
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminum Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims 13
- 239000002994 raw material Substances 0.000 claims 13
- RTAQQCXQSZGOHL-UHFFFAOYSA-N titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims 13
- 229910052719 titanium Inorganic materials 0.000 claims 13
- 239000010936 titanium Substances 0.000 claims 13
- 239000000463 material Substances 0.000 claims 12
- 239000000758 substrate Substances 0.000 claims 9
- IJGRMHOSHXDMSA-UHFFFAOYSA-N nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims 8
- 238000004519 manufacturing process Methods 0.000 claims 5
- 239000004065 semiconductor Substances 0.000 claims 5
- 229910052757 nitrogen Inorganic materials 0.000 claims 4
- 238000000034 method Methods 0.000 claims 2
- QJGQUHMNIGDVPM-UHFFFAOYSA-N nitrogen group Chemical group [N] QJGQUHMNIGDVPM-UHFFFAOYSA-N 0.000 claims 2
Claims (6)
前記基板に対して、窒素含有原料を連続的に供給する工程と、
を行い、前記基板にチタン、アルミニウム及び窒素を含有する膜を形成する半導体装置の製造方法。 Supplying the titanium-containing raw material and the aluminum-containing raw material with intermittent pulses to the substrate accommodated in the processing chamber ;
Relative to the previous SL substrate, a step of supplying a nitrogen-containing raw material continuously,
And a method of manufacturing a semiconductor device, wherein a film containing titanium, aluminum and nitrogen is formed on the substrate .
前記処理室に、チタン含有原料、アルミニウム含有原料及び窒素含有原料を供給する原料供給系と、 A raw material supply system for supplying a titanium-containing raw material, an aluminum-containing raw material, and a nitrogen-containing raw material to the processing chamber;
前記原料供給系を制御して、前記処理室に収容された基板に対して、前記チタン含有原料及び前記アルミニウム含有原料を断続的なパルスで供給する処理と、前記基板に対して、前記窒素含有原料を連続的に供給する処理と、を行い、前記基板にチタン、アルミニウム及び窒素を含有する膜を形成するよう構成される制御部と、 A process of controlling the raw material supply system to supply the titanium-containing raw material and the aluminum-containing raw material with intermittent pulses to the substrate housed in the processing chamber, and the substrate containing the nitrogen. A process of continuously supplying raw materials, and a controller configured to form a film containing titanium, aluminum, and nitrogen on the substrate;
を有する基板処理装置。A substrate processing apparatus.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2012013110A JP2013151722A (en) | 2012-01-25 | 2012-01-25 | Method for manufacturing semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2012013110A JP2013151722A (en) | 2012-01-25 | 2012-01-25 | Method for manufacturing semiconductor device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2013151722A JP2013151722A (en) | 2013-08-08 |
| JP2013151722A5 true JP2013151722A5 (en) | 2015-03-05 |
Family
ID=49048289
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2012013110A Pending JP2013151722A (en) | 2012-01-25 | 2012-01-25 | Method for manufacturing semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2013151722A (en) |
Families Citing this family (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP6243290B2 (en) * | 2014-05-01 | 2017-12-06 | 東京エレクトロン株式会社 | Film forming method and film forming apparatus |
| JP6486479B2 (en) * | 2015-09-03 | 2019-03-20 | 株式会社Ｋｏｋｕｓａｉ Ｅｌｅｃｔｒｉｃ | Semiconductor device manufacturing method, substrate processing apparatus, program, and supply system |
| KR102297200B1 (en) | 2016-03-29 | 2021-09-03 | 가부시키가이샤 코쿠사이 엘렉트릭 | Method for manufacturing semiconductor device, substrate processing device, and program |
| JP6826173B2 (en) * | 2019-09-17 | 2021-02-03 | 株式会社Ｋｏｋｕｓａｉ Ｅｌｅｃｔｒｉｃ | Semiconductor device manufacturing methods, substrate processing devices and programs |
| KR20210047119A (en) | 2019-10-21 | 2021-04-29 | 삼성전자주식회사 | Method of manufacturing a metal nitride layer and electronic device including the metal nitride layer |
| KR20210108736A (en) | 2020-02-26 | 2021-09-03 | 삼성전자주식회사 | Capacitor, semiconductor device inclduing the same, method of fabricating capacitor |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH06314660A (en) * | 1993-03-04 | 1994-11-08 | Mitsubishi Electric Corp | Method and apparatus for forming thin film |
| KR100363088B1 (en) * | 2000-04-20 | 2002-12-02 | 삼성전자 주식회사 | Method of manufacturing barrier metal layer using atomic layer deposition method |
| JP4178776B2 (en) * | 2001-09-03 | 2008-11-12 | 東京エレクトロン株式会社 | Deposition method |
| JP4214795B2 (en) * | 2003-02-20 | 2009-01-28 | 東京エレクトロン株式会社 | Deposition method |
| JP2011132568A (en) * | 2009-12-24 | 2011-07-07 | Hitachi Kokusai Electric Inc | Method for manufacturing semiconductor device, and substrate processing apparatus |
-
2012
- 2012-01-25 JP JP2012013110A patent/JP2013151722A/en active Pending
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