JP2013102356A - 無線装置およびその製造方法 - Google Patents
無線装置およびその製造方法 Download PDFInfo
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- JP2013102356A JP2013102356A JP2011244970A JP2011244970A JP2013102356A JP 2013102356 A JP2013102356 A JP 2013102356A JP 2011244970 A JP2011244970 A JP 2011244970A JP 2011244970 A JP2011244970 A JP 2011244970A JP 2013102356 A JP2013102356 A JP 2013102356A
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Abstract
【解決手段】無線装置は、マイクロ波、ミリ波帯の電力増幅器用高周波ICチップ100、バンプ102、入力端子103、出力端子104、基板105、アンダーフィル106、プロセスばらつき検出部110を有する。プロセスばらつき検出部は、プロセスばらつきによる回路特性の変動量をモニタし、モニタされた回路特性の変動量を用いて、算出されたパラーメータを有するアンダーフィル106が、基板105とミリ波帯の電力増幅器用高周波ICチップ100との間に充填されることで、プロセスばらつき及びアンダーフィルの影響があっても、所望の回路特性が得られる無線装置を提供できる。
【選択図】図1
Description
図1に、本発明の実施の形態1としてマイクロ波・ミリ波回路に対応した電力増幅器を含む無線装置の構成の一例を示す。
例えば、閾値電圧Vthが中心の場合に入力反射係数S11及び出力反射係数S22のノッチ、すなわち、反射係数が最も小さくなる位置が所望の周波数(ノッチ周波数)fcとなるように設計をしたとしても、プロセスばらつきとしてのトランジスタ501の寄生容量によって、図4に示すように閾値電圧Vthが低くなると、入力反射係数S11及び出力反射係数S22のノッチの位置が低周波数側にシフトする。
なお、変形例として、主回路101を構成するMOSトランジスタ501をばらつき検出回路(プロセスばらつき検出部)と兼用して用いることも可能である。
次に、ばらつき検出回路の回路構成を変更した実施の形態について説明する。
次に本発明の実施の形態3について説明する。図12(a)は、本発明の実施の形態3における無線装置を構成する電力増幅器ICチップを下方から見た図である。図12(a)は、電力増幅器用高周波ICチップ100の下面にバンプ102が非対称に配置されている。
通常、電力増幅器ICチップのバンプ数を最小とする構成であるが、実装基板−電力増幅器ICチップ間の距離を調整するため、あるいは、電力増幅器用高周波ICチップ内がフリップチップ実装される領域内120において距離を非対称にするために、前記実施の形態3の無線装置用の電力増幅器用高周波ICチップ100の構成に加え、図13に示すように予備のバンプ115を配置すれば良い。
次に本発明の実施の形態4について説明する。本発明の実施の形態1および2では、プロセスばらつき検出部110の一例として、トランジスタの閾値電圧Vthを検出するためにトランジスタ又はリングオシレーターを使用したが、本発明の実施の形態4では、PCM(ProcessControl Monitor)データをばらつき検出部の検出値として使用する。なお、PCMデータは、電力増幅器ICチップの製造における、チップの品質管理に用いるデータ(出来栄えを示すデータ)である。
この方法は、ウェハ毎に少なくとも一つのプロセスばらつき検出部を有するとともに、主回路を構成する素子部を備えた複数の高周波ICチップ形成部を有するウェハを製造する工程と、前記プロセスばらつき検出部を用いてプロセスばらつきを検出する工程と、前記ウェハを複数の高周波ICチップに分割する工程と、前記検出する工程において検出されたデータに基づいてアンダーフィルのパラメータを調整する工程と、前記調整する工程において得られた前記パラメータを有するアンダーフィルを充填して、実装基板上に前記高周波ICチップを実装する工程と、を含む。
すなわち、図16に示すように、ウェハW上の所定位置に、例えば、電力増幅器用高周波ICチップ100を配列した素子部500と、モニタ部Mとが形成されており、モニタ部Mに例えばポリシリコン抵抗が形成されている。なお、ポリシリコン抵抗は、両端の電圧および電流が測定可能であるため、抵抗値が算出できる。
101 主回路
110 プロセスばらつき検出部
102 バンプ
103 入力端子
104 出力端子
105 実装基板
106 アンダーフィル
500 素子部
501 電力増幅用のトランジスタ
502 入力端子
503 出力端子
504、505 直流阻止用容量
506、507 入力整合用の伝送線路
508、509 主回路を構成する素子部
510 ゲート電圧端子
511 ドレイン電圧端子
Claims (11)
- 実装基板と、
前記実装基板上にフリップチップ実装された高周波ICチップと、を備え、
前記高周波ICチップと前記実装基板との間にアンダーフィルが充填された無線装置であって、
前記高周波ICチップは、主回路を構成する素子部と、前記高周波ICチップのプロセスばらつきを検出するプロセスばらつき検出部と、
を具備し、
前記充填されたアンダーフィルは、前記検出したプロセスばらつきに基づいて調整されたパラメータを有する
無線装置。 - 請求項1に記載の無線装置であって、前記プロセスばらつき検出部は前記素子部の一部として機能する無線装置。
- 請求項1に記載の無線装置であって、前記プロセスばらつき検出部は、前記高周波ICチップ上において、前記素子部とは分離された無線装置。
- 請求項1乃至3のいずれか1項に記載の無線装置であって、
前記プロセスばらつき検出部はトランジスタを用いて構成された無線装置。 - 請求項1乃至3のいずれか1項に記載の無線装置であって、
前記プロセスばらつき検出部は、リングオシレーターを用いて構成された無線装置。 - 請求項1に記載の無線装置であって、
前記アンダーフィルのパラメータは、アンダーフィルとして充填する材料の比誘電率である無線装置。 - 請求項1に記載の無線装置であって、
前記アンダーフィルのパラメータは前記高周波ICチップと前記実装基板間の距離である無線装置。 - 請求項1に記載の無線装置であって、
前記高周波ICチップはバンプを介して前記実装基板と接続し、
前記バンプは、前記高周波ICチップ上において、非対称に配置されている無線装置。 - 請求項1に記載の無線装置であって、
前記高周波ICチップと前記実装基板との間のアンダーフィルは、前記高周波ICチップをフリップチップ実装した領域内において厚さが異なる無線装置。 - 請求項1に記載の無線装置であって、
前記プロセスばらつき検出部はPCM(Process Control Monitor)データを用いる無線装置。 - 主回路を構成する素子部と、プロセスばらつき検出部とを備えた高周波ICチップを製造する工程と、
前記高周波ICチップの前記プロセスばらつき検出部を用いてプロセスばらつきを検出する工程と、
前記検出する工程において検出されたデータに基づいてアンダーフィルのパラメータを調整する工程と、
前記調整する工程において得られた前記パラメータを有するアンダーフィルを充填して、実装基板上に前記高周波ICチップを実装する工程と、を含む無線装置の製造方法。
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JP2011244970A JP2013102356A (ja) | 2011-11-08 | 2011-11-08 | 無線装置およびその製造方法 |
PCT/JP2012/006727 WO2013069213A1 (ja) | 2011-11-08 | 2012-10-19 | 無線装置及びその製造方法 |
CN201280031121.1A CN103650357A (zh) | 2011-11-08 | 2012-10-19 | 无线装置及其制造方法 |
US14/130,581 US20140211441A1 (en) | 2011-11-08 | 2012-10-19 | Wireless apparatus and method for manufacturing same |
TW101139053A TW201324692A (zh) | 2011-11-08 | 2012-10-23 | 無線裝置及其製造方法 |
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JP2020088468A (ja) * | 2018-11-19 | 2020-06-04 | 富士通株式会社 | 増幅器及び増幅装置 |
WO2022209728A1 (ja) * | 2021-03-31 | 2022-10-06 | 株式会社村田製作所 | 高周波モジュール及び通信装置 |
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WO2013069213A1 (ja) | 2013-05-16 |
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