JP2013084713A - 固体撮像素子および製造方法、並びに撮像ユニット - Google Patents

固体撮像素子および製造方法、並びに撮像ユニット Download PDF

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Publication number
JP2013084713A
JP2013084713A JP2011222743A JP2011222743A JP2013084713A JP 2013084713 A JP2013084713 A JP 2013084713A JP 2011222743 A JP2011222743 A JP 2011222743A JP 2011222743 A JP2011222743 A JP 2011222743A JP 2013084713 A JP2013084713 A JP 2013084713A
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JP
Japan
Prior art keywords
shielding film
light
light shielding
transfer electrode
solid
Prior art date
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Pending
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JP2011222743A
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English (en)
Japanese (ja)
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JP2013084713A5 (enExample
Inventor
Yoshiaki Kitano
良昭 北野
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sony Corp
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Sony Corp
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Filing date
Publication date
Application filed by Sony Corp filed Critical Sony Corp
Priority to JP2011222743A priority Critical patent/JP2013084713A/ja
Priority to US13/604,155 priority patent/US9252173B2/en
Priority to CN201210394766.3A priority patent/CN103037174B/zh
Publication of JP2013084713A publication Critical patent/JP2013084713A/ja
Publication of JP2013084713A5 publication Critical patent/JP2013084713A5/ja
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/805—Coatings
    • H10F39/8057—Optical shielding
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/011—Manufacture or treatment of image sensors covered by group H10F39/12
    • H10F39/024—Manufacture or treatment of image sensors covered by group H10F39/12 of coatings or optical elements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/011—Manufacture or treatment of image sensors covered by group H10F39/12
    • H10F39/026—Wafer-level processing
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/15—Charge-coupled device [CCD] image sensors
    • H10F39/151—Geometry or disposition of pixel elements, address lines or gate electrodes
    • H10F39/1515—Optical shielding
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/15—Charge-coupled device [CCD] image sensors
    • H10F39/153—Two-dimensional or three-dimensional array CCD image sensors
    • H10F39/1534—Interline transfer

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  • Solid State Image Pick-Up Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
JP2011222743A 2011-10-07 2011-10-07 固体撮像素子および製造方法、並びに撮像ユニット Pending JP2013084713A (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2011222743A JP2013084713A (ja) 2011-10-07 2011-10-07 固体撮像素子および製造方法、並びに撮像ユニット
US13/604,155 US9252173B2 (en) 2011-10-07 2012-09-05 Solid-state imaging device and manufacturing method of the same, and imaging unit
CN201210394766.3A CN103037174B (zh) 2011-10-07 2012-09-28 固态成像装置和其制造方法以及成像单元

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2011222743A JP2013084713A (ja) 2011-10-07 2011-10-07 固体撮像素子および製造方法、並びに撮像ユニット

Publications (2)

Publication Number Publication Date
JP2013084713A true JP2013084713A (ja) 2013-05-09
JP2013084713A5 JP2013084713A5 (enExample) 2014-11-20

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
JP2011222743A Pending JP2013084713A (ja) 2011-10-07 2011-10-07 固体撮像素子および製造方法、並びに撮像ユニット

Country Status (3)

Country Link
US (1) US9252173B2 (enExample)
JP (1) JP2013084713A (enExample)
CN (1) CN103037174B (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN111183522A (zh) * 2017-10-03 2020-05-19 索尼半导体解决方案公司 固态摄像元件、固态摄像元件的制造方法以及电子设备

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI785478B (zh) * 2020-08-17 2022-12-01 友達光電股份有限公司 指紋感測裝置

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH04315472A (ja) * 1991-04-15 1992-11-06 Sony Corp 固体撮像素子

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JP3142327B2 (ja) * 1991-02-05 2001-03-07 株式会社東芝 固体撮像装置及びその製造方法
JPH04315474A (ja) * 1991-04-12 1992-11-06 Mitsubishi Electric Corp 固体撮像素子の製造方法
JPH05167052A (ja) * 1991-12-16 1993-07-02 Sony Corp 固体撮像装置の製造方法
EP0557098B1 (en) * 1992-02-20 1998-04-29 Matsushita Electronics Corporation Solid-State Image Pick-up Device and Method of manufacturing the same
US5514888A (en) * 1992-05-22 1996-05-07 Matsushita Electronics Corp. On-chip screen type solid state image sensor and manufacturing method thereof
US5643232A (en) * 1996-01-19 1997-07-01 James P Villotti Jr PAP smear glove
JP4318007B2 (ja) * 1999-10-07 2009-08-19 富士フイルム株式会社 固体撮像素子
JP3753613B2 (ja) * 2000-03-17 2006-03-08 セイコーエプソン株式会社 電気光学装置及びそれを用いたプロジェクタ
KR100481590B1 (ko) * 2000-04-21 2005-04-08 세이코 엡슨 가부시키가이샤 전기 광학 장치, 투사형 표시 장치 및 전기 광학 장치의제조 방법
JP4185678B2 (ja) * 2001-06-08 2008-11-26 株式会社日立製作所 液晶表示装置
JP4427949B2 (ja) * 2002-12-13 2010-03-10 ソニー株式会社 固体撮像素子及びその製造方法
US7473977B2 (en) * 2003-03-06 2009-01-06 Sony Corporation Method of driving solid state image sensing device
JP4652773B2 (ja) * 2004-11-05 2011-03-16 パナソニック株式会社 増幅型固体撮像装置
JP4643249B2 (ja) * 2004-12-22 2011-03-02 株式会社東芝 固体撮像装置
JP4867226B2 (ja) * 2005-07-27 2012-02-01 ソニー株式会社 固体撮像装置およびその製造方法、並びにカメラ
JP5110519B2 (ja) * 2005-08-30 2012-12-26 国立大学法人静岡大学 半導体測距素子及び固体撮像装置
JP4330607B2 (ja) * 2005-12-26 2009-09-16 三洋電機株式会社 固体撮像装置
JP4586732B2 (ja) * 2006-01-06 2010-11-24 セイコーエプソン株式会社 電気光学装置及びその製造方法並びに電子機器
JP2009075207A (ja) * 2007-09-19 2009-04-09 Panasonic Corp フォトマスク及びそれを用いたパターン形成方法
JP5176453B2 (ja) * 2007-09-27 2013-04-03 ソニー株式会社 固体撮像装置、固体撮像装置の製造方法及び撮像装置
JP2009128739A (ja) * 2007-11-27 2009-06-11 Seiko Epson Corp 液晶装置及び電子機器
JP5296406B2 (ja) * 2008-04-02 2013-09-25 パナソニック株式会社 固体撮像装置及びその製造方法
JP2009295918A (ja) * 2008-06-09 2009-12-17 Panasonic Corp 固体撮像装置及びその製造方法
JP5396809B2 (ja) * 2008-10-17 2014-01-22 ソニー株式会社 固体撮像装置、カメラ、および、固体撮像装置の製造方法
JP4743265B2 (ja) * 2008-12-09 2011-08-10 ソニー株式会社 固体撮像素子及び固体撮像素子の製造方法
WO2010103814A1 (ja) * 2009-03-11 2010-09-16 パナソニック株式会社 固体撮像装置
TWI373853B (en) * 2009-03-16 2012-10-01 Au Optronics Corp Active device array substrate and method for fabricating thereof

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH04315472A (ja) * 1991-04-15 1992-11-06 Sony Corp 固体撮像素子

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN111183522A (zh) * 2017-10-03 2020-05-19 索尼半导体解决方案公司 固态摄像元件、固态摄像元件的制造方法以及电子设备
CN111183522B (zh) * 2017-10-03 2023-11-17 索尼半导体解决方案公司 固态摄像元件、固态摄像元件的制造方法以及电子设备
US12021101B2 (en) 2017-10-03 2024-06-25 Sony Semiconductor Solutions Corporation Imaging device

Also Published As

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US9252173B2 (en) 2016-02-02
CN103037174B (zh) 2018-08-28
CN103037174A (zh) 2013-04-10
US20130088713A1 (en) 2013-04-11

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