JP2013074300A - 支持チャックにeuvlマスクを電気的に結合するための導電性要素 - Google Patents
支持チャックにeuvlマスクを電気的に結合するための導電性要素 Download PDFInfo
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- 238000000034 method Methods 0.000 claims abstract description 32
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- 238000001900 extreme ultraviolet lithography Methods 0.000 abstract description 167
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- 238000003384 imaging method Methods 0.000 abstract description 4
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- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 4
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- 239000010703 silicon Substances 0.000 description 4
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 3
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- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
- H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
- H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
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- G01N23/02—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00 by transmitting the radiation through the material
- G01N23/06—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00 by transmitting the radiation through the material and measuring the absorption
- G01N23/18—Investigating the presence of flaws defects or foreign matter
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- G01N23/02—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00 by transmitting the radiation through the material
- G01N23/06—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00 by transmitting the radiation through the material and measuring the absorption
- G01N23/083—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00 by transmitting the radiation through the material and measuring the absorption the radiation being X-rays
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- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
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- G03F7/20—Exposure; Apparatus therefor
- G03F7/2002—Exposure; Apparatus therefor with visible light or UV light, through an original having an opaque pattern on a transparent support, e.g. film printing, projection printing; by reflection of visible or UV light from an original such as a printed image
- G03F7/2004—Exposure; Apparatus therefor with visible light or UV light, through an original having an opaque pattern on a transparent support, e.g. film printing, projection printing; by reflection of visible or UV light from an original such as a printed image characterised by the use of a particular light source, e.g. fluorescent lamps or deep UV light
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- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
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- H01J37/02—Details
- H01J37/20—Means for supporting or positioning the object or the material; Means for adjusting diaphragms or lenses associated with the support
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- H—ELECTRICITY
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- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
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- H—ELECTRICITY
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- H01J2237/0041—Neutralising arrangements
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- H—ELECTRICITY
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- H01J2237/20—Positioning, supporting, modifying or maintaining the physical state of objects being observed or treated
- H01J2237/2008—Positioning, supporting, modifying or maintaining the physical state of objects being observed or treated specially adapted for studying electrical or magnetical properties of objects
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
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Abstract
【解決手段】結合モジュールは、開口を定める上側部分と、マスク接触要素と、チャック接触要素と、マスク接触要素と上側部分の間に接続された中間要素とを含むことができる。開口の形状及びサイズは、極端紫外線(EUVL)マスクのパターン転写区域の形状及びサイズに対応することができる。結合モジュールは、マスク接触要素がEUVLマスクの上側部分に接触した状態でチャック接触要素がEUVLマスクを支持するチャックに接触するような形状及びサイズとすることができる。結合モジュールは、EUVLマスクがチャック上に位置決めされた時にEUVLマスクの上側部分とチャックの間に少なくとも1つの導電経路を更に提供することができる。
【選択図】図2
Description
本出願は、本明細書において引用により組み込まれる2011年9月27日出願の米国特許仮出願第61/539,971号の非仮出願であり、かつそれに対する優先権を請求するものである。
ロボットアームは、EUVLマスクを検査ツールへのその方向に搬送することができる。
本発明の実施形態により、結合モジュールはチャックに緩く接触し、結合モジュールは、結合モジュールに取り付けられたバネ(又は他の伸縮性要素)を通じて接続することができる。バネは僅かに接触し、これは、電気的接触が生じることを可能にするが、結合モジュールがバネによって持ち上げられてそのためにEUVLマスク表面と結合モジュールとの接触を損なうのを防止する。
図14は、本発明の実施形態による(a)EUVLマスク10及び結合モジュール20の平面図と(b)結合モジュール20の断面図(想像線70に沿った)とを含む。
20 結合モジュール
22 開口
50 チャック
Claims (15)
- 極端紫外線(EUVL)マスクをチャックに結合するための結合モジュールであって、
開口を定める上側部分と、
少なくとも1つのマスク接触要素と、
チャック接触要素と、
前記マスク接触要素と前記上側部分の間に接続した中間要素と、
を含み、
前記開口の形状及びサイズが、EUVLマスクのパターン転写区域の形状及びサイズに対応し、
結合モジュールが、前記少なくとも1つのマスク接触要素が前記EUVLマスクの上側部分に接触した状態で、前記チャック接触要素が該EUVLマスクを支持するチャックに接触するような形状及びサイズであり、
結合モジュールが、前記EUVLマスクが結合モジュールと整列して前記チャック上に位置決めされた時に、該EUVLマスクの前記上側部分と該チャックの間に少なくとも1つの導電経路をもたらす、
ことを特徴とする結合モジュール。 - 前記EUVLマスクが前記チャック上に位置決めされた時に該EUVLマスクのエッジを遮蔽することを特徴とする請求項1に記載の結合モジュール。
- 少なくとも1つのマスク接触要素が、バネを含むことを特徴とする請求項1に記載の結合モジュール。
- 前記上側部分と前記中間要素の底端との高低差が、前記EUVLマスクの高さよりも小さいことを特徴とする請求項1に記載の結合モジュール。
- 前記マスク接触要素は、前記パターン転写区域の外側である位置で前記EUVLマスクに接触するように位置決めされることを特徴とする請求項1に記載の結合モジュール。
- 前記開口は、結合モジュールが前記EUVLマスク上に置かれた状態で前記パターン転写区域を露出することを特徴とする請求項1に記載の結合モジュール。
- 前記中間要素は、前記EUVLマスクを取り囲むような形状であることを特徴とする請求項1に記載の結合モジュール。
- 前記中間要素は、結合モジュールがEUVLマスク上に置かれた時に該EUVLマスクの少なくとも1つの側壁に接触するような形状であることを特徴とする請求項1に記載の結合モジュール。
- 前記EUVLマスクの中心の周りに対称であることを特徴とする請求項1に記載の結合モジュール。
- ステンレス鋼で製造されることを特徴とする請求項1に記載の結合モジュール。
- 前記少なくとも1つの導電経路は、非導電性結合モジュールの導電性コーティングによって形成されることを特徴とする請求項1に記載の結合モジュール。
- 前記少なくとも1つの導電経路は、複数の導電経路を含むことを特徴とする請求項1に記載の結合モジュール。
- 前記少なくとも1つのマスク接触要素は、結合モジュールが前記EUVLマスク上に置かれた時に前記チャックに緩く接触するように配列されることを特徴とする請求項1に記載の結合モジュール。
- 互いに絶縁された複数の結合モジュール導電部分を含み、
異なる結合モジュール導電部分が、異なるマスク接触要素に結合され、
各マスク接触要素は、結合モジュール導電部分を前記EUVLマスクに電気的に結合する、
ことを特徴とする請求項1に記載の結合モジュール。 - 極端紫外線(EUVL)マスクを検査する方法であって、
チャック上にEUVLマスク及び結合モジュールを置き、該結合モジュールが該EUVLマスクの上側部分と該チャックとを電気的に結合する段階と、
前記結合モジュールの上側部分によって形成された開口を通過する荷電粒子ビームにより、前記チャックと、該結合モジュールと、該荷電粒子ビームとが真空チャンバに位置する間に前記EUVLマスクのパターン転写区域の少なくとも一部分を走査する段階と、
を含むことを特徴とする方法。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US201161539971P | 2011-09-27 | 2011-09-27 | |
US61/539,971 | 2011-09-27 |
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JP2013074300A true JP2013074300A (ja) | 2013-04-22 |
JP5808723B2 JP5808723B2 (ja) | 2015-11-10 |
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US (1) | US8772737B2 (ja) |
JP (1) | JP5808723B2 (ja) |
KR (1) | KR101579748B1 (ja) |
CN (1) | CN103105725B (ja) |
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Cited By (1)
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JP2016170310A (ja) * | 2015-03-13 | 2016-09-23 | 株式会社荏原製作所 | レチクル搬送装置、検査装置およびレチクル搬送方法 |
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KR102254042B1 (ko) * | 2013-08-12 | 2021-05-21 | 어플라이드 머티리얼즈 이스라엘 리미티드 | 마스크를 마스크 홀더에 부착하기 위한 시스템 및 방법 |
US9341937B2 (en) * | 2014-04-25 | 2016-05-17 | Taiwan Semiconductor Manufacturing Co., Ltd | Lithography system and method for patterning photoresist layer on EUV mask |
CN115298792A (zh) * | 2019-10-28 | 2022-11-04 | Asml荷兰有限公司 | 用于在带电粒子系统中对掩模进行检查和接地的系统 |
US11694869B2 (en) | 2020-12-08 | 2023-07-04 | Applied Materials Israel Ltd. | Evaluating a contact between a wafer and an electrostatic chuck |
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- 2012-09-27 CN CN201210375797.4A patent/CN103105725B/zh active Active
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Also Published As
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KR101579748B1 (ko) | 2015-12-23 |
US20130075605A1 (en) | 2013-03-28 |
US8772737B2 (en) | 2014-07-08 |
CN103105725A (zh) | 2013-05-15 |
KR20130033984A (ko) | 2013-04-04 |
TW201317718A (zh) | 2013-05-01 |
CN103105725B (zh) | 2018-01-09 |
TWI486725B (zh) | 2015-06-01 |
JP5808723B2 (ja) | 2015-11-10 |
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