JP2014038928A - 試料保持具及びこれを用いた電子ビーム露光方法 - Google Patents
試料保持具及びこれを用いた電子ビーム露光方法 Download PDFInfo
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/02—Details
- H01J37/20—Means for supporting or positioning the objects or the material; Means for adjusting diaphragms or lenses associated with the support
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y40/00—Manufacture or treatment of nanostructures
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
- H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
- H01J37/3174—Particle-beam lithography, e.g. electron beam lithography
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
- H01L21/6833—Details of electrostatic chucks
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68728—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a plurality of separate clamping members, e.g. clamping fingers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/20—Positioning, supporting, modifying or maintaining the physical state of objects being observed or treated
- H01J2237/2007—Holding mechanisms
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- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Analytical Chemistry (AREA)
- Crystallography & Structural Chemistry (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Theoretical Computer Science (AREA)
- Mathematical Physics (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
- Electron Beam Exposure (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
Abstract
【解決手段】静電チャック74と該静電チャック74の上面よりも小さな試料50との間に配置される試料保持具10であって、前記静電チャック74の上面と同じ大きさに形成された基板11と、前記基板11の上面であって前記試料50が載置される試料載置部と、前記基板11の上面の前記試料載置部以外の部分であって、導電材料13が露出している周縁部と、を備える試料保持具10を用いることで、周縁部のチャージアップを防ぐ。
【選択図】図4
Description
図1は、電子ビーム露光装置のブロック図である。
図6(a)、(b)は、第1実施形態の変形例に係る電子ビーム露光方法を示す図である。
図7(a)は、第2実施形態に係る試料保持具の断面図であり、図7(b)は第2実施形態で使用される試料の断面図であり、図7(c)は、図7(a)に示す試料保持具を用いて、図7(b)に示す試料を固定する方法を示す断面図である。
図8(a)は、第3実施形態に係る試料保持具30の平面図であり、図8(a)のBB部分の断面図である。
Claims (11)
- 静電チャックと該静電チャックの上面よりも小さな試料との間に配置される試料保持具であって、
前記静電チャックの上面と同じ大きさに形成された基板と、
前記基板の上面であって前記試料が載置される試料載置部と、
前記基板の上面の前記試料載置部以外の部分であって、導電材料が露出している周縁部と、
を備えることを特徴とする試料保持具。 - 前記試料載置部に、前記周縁部で露出している導電材料と電気的に絶縁された第1の電極を備えることを特徴とする請求項1に記載の試料保持具。
- 前記試料載置部に、前記第1の電極を覆う絶縁部材を備えることを特徴とする請求項2に記載の試料保持具。
- 前記試料は導体又は半導体よりなり、前記第1の電極は前記試料に静電分極を引き起こさせることで前記試料との間に静電的な吸着力を発生させることを特徴とする請求項2又は請求項3に記載の試料保持具。
- 前記基板は導電体又は半導体よりなり、前記第1の電極は前記基板の上に形成された絶縁膜の上に形成されていることを特徴とする請求項2乃至請求項4のいずれか1項に記載の試料保持具。
- 前記基板は絶縁材料よりなり、前記第1の電極は前記基板の上に形成されていることを特徴とする請求項2乃至請求項4のいずれか1項に記載の試料保持具。
- 前記周縁部は導電材料よりなり、且つ前記第1の電極と分離して形成された帯電防止膜によって覆われていることを特徴とする請求項6に記載の試料保持具。
- 前記基板の下面に、前記第1の電極から電気的に絶縁された第2の電極を備えることを特徴とする請求項6又は請求項7に記載の試料保持具。
- 前記載置部の周囲に、前記試料を前記試料載置部上に位置決めする位置決め部材を備えることを特徴とする請求項1乃至請求項8のいずれか1項に記載の試料保持具。
- 静電チャックの上面と同じ大きさに形成された基板と、前記基板の上面であって試料が載置される試料載置部と、前記基板の上面の前記試料載置部以外の部分であって、導電材料が露出している周縁部と、を備える試料保持具を用いた電子ビーム露光方法であって、
前記試料保持具に試料を載置する工程と、
前記試料が載置された試料保持具を静電チャック上に配置し、該静電チャックに電圧を印加して前記試料保持具を固定する工程と、
前記静電チャック上に配置された前記試料に電子ビームを照射してパターンの描画を行う工程と、
を有することを特徴とする電子ビーム露光方法。 - 前記試料保持具は、更に前記周縁部で露出している前記導電材料から電気的に絶縁された第1の電極を有し、
前記試料保持具に試料を載置する工程の後に、
前記第1の電極に電圧を印加して前記第1の電極と前記試料との間に静電的な吸着力を発生させる工程と、
前記第1の電極と前記試料との間に残留した電荷による吸着状態を維持した状態で前記試料保持具を静電チャック上に搬送する工程と、
を有することを特徴とする請求項10に記載の電子ビーム露光方法。
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2012180047A JP5351316B1 (ja) | 2012-08-15 | 2012-08-15 | 試料保持具及びこれを用いた電子ビーム露光方法 |
DE102013108586.5A DE102013108586A1 (de) | 2012-08-15 | 2013-08-08 | Probenhalter eines Elektronenstrahlbestrahlungsgeräts und diesen verwendendes Elektronenstrahlbestrahlungsverfahren |
US13/967,970 US8859993B2 (en) | 2012-08-15 | 2013-08-15 | Sample holder of electron beam exposure apparatus and electron beam exposure method using the same |
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JP2012180047A JP5351316B1 (ja) | 2012-08-15 | 2012-08-15 | 試料保持具及びこれを用いた電子ビーム露光方法 |
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JP5351316B1 JP5351316B1 (ja) | 2013-11-27 |
JP2014038928A true JP2014038928A (ja) | 2014-02-27 |
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US (1) | US8859993B2 (ja) |
JP (1) | JP5351316B1 (ja) |
DE (1) | DE102013108586A1 (ja) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US11817341B2 (en) | 2017-06-02 | 2023-11-14 | Lam Research Corporation | Electrostatic chuck for use in semiconductor processing |
US11835868B2 (en) | 2018-03-20 | 2023-12-05 | Lam Research Corporation | Protective coating for electrostatic chucks |
US11990360B2 (en) | 2018-01-31 | 2024-05-21 | Lam Research Corporation | Electrostatic chuck (ESC) pedestal voltage isolation |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20180025931A1 (en) * | 2016-07-22 | 2018-01-25 | Applied Materials, Inc. | Processed wafer as top plate of a workpiece carrier in semiconductor and mechanical processing |
CN110656316B (zh) * | 2019-10-31 | 2021-11-09 | 中山凯旋真空科技股份有限公司 | 夹具及具有其的镀膜设备 |
Family Cites Families (5)
Publication number | Priority date | Publication date | Assignee | Title |
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JP2004140297A (ja) | 2002-10-21 | 2004-05-13 | Tokyo Electron Ltd | 半導体ウエハ用搬送トレー |
US20040261946A1 (en) * | 2003-04-24 | 2004-12-30 | Tokyo Electron Limited | Plasma processing apparatus, focus ring, and susceptor |
JP2008021686A (ja) | 2006-07-10 | 2008-01-31 | Shin Etsu Chem Co Ltd | 基板保持トレー |
JP5380443B2 (ja) * | 2008-06-25 | 2014-01-08 | 株式会社日立ハイテクノロジーズ | 半導体検査装置 |
JP5143787B2 (ja) | 2009-06-04 | 2013-02-13 | 株式会社日立ハイテクノロジーズ | 荷電粒子線装置及び荷電粒子線装置を利用した評価方法 |
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2012
- 2012-08-15 JP JP2012180047A patent/JP5351316B1/ja active Active
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2013
- 2013-08-08 DE DE102013108586.5A patent/DE102013108586A1/de not_active Withdrawn
- 2013-08-15 US US13/967,970 patent/US8859993B2/en active Active
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US11817341B2 (en) | 2017-06-02 | 2023-11-14 | Lam Research Corporation | Electrostatic chuck for use in semiconductor processing |
US11990360B2 (en) | 2018-01-31 | 2024-05-21 | Lam Research Corporation | Electrostatic chuck (ESC) pedestal voltage isolation |
US11835868B2 (en) | 2018-03-20 | 2023-12-05 | Lam Research Corporation | Protective coating for electrostatic chucks |
Also Published As
Publication number | Publication date |
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US20140048720A1 (en) | 2014-02-20 |
JP5351316B1 (ja) | 2013-11-27 |
US8859993B2 (en) | 2014-10-14 |
DE102013108586A1 (de) | 2014-02-20 |
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