JP2013064724A - 半導体装置 - Google Patents
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 129
- 230000008859 change Effects 0.000 claims abstract description 21
- 239000000758 substrate Substances 0.000 claims description 49
- 238000000034 method Methods 0.000 abstract description 34
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- 230000001133 acceleration Effects 0.000 description 42
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- 238000005530 etching Methods 0.000 description 12
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 11
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- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 6
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- 238000005452 bending Methods 0.000 description 5
- 239000012535 impurity Substances 0.000 description 5
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 5
- 239000004020 conductor Substances 0.000 description 4
- 239000012212 insulator Substances 0.000 description 3
- 239000011241 protective layer Substances 0.000 description 3
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
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- 238000006467 substitution reaction Methods 0.000 description 1
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- B81—MICROSTRUCTURAL TECHNOLOGY
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- B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
- B81C1/00777—Preserve existing structures from alteration, e.g. temporary protection during manufacturing
- B81C1/00825—Protect against mechanical threats, e.g. against shocks, or residues
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- G—PHYSICS
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- G01C—MEASURING DISTANCES, LEVELS OR BEARINGS; SURVEYING; NAVIGATION; GYROSCOPIC INSTRUMENTS; PHOTOGRAMMETRY OR VIDEOGRAMMETRY
- G01C19/00—Gyroscopes; Turn-sensitive devices using vibrating masses; Turn-sensitive devices without moving masses; Measuring angular rate using gyroscopic effects
- G01C19/56—Turn-sensitive devices using vibrating masses, e.g. vibratory angular rate sensors based on Coriolis forces
- G01C19/5719—Turn-sensitive devices using vibrating masses, e.g. vibratory angular rate sensors based on Coriolis forces using planar vibrating masses driven in a translation vibration along an axis
- G01C19/5733—Structural details or topology
- G01C19/5755—Structural details or topology the devices having a single sensing mass
- G01C19/5762—Structural details or topology the devices having a single sensing mass the sensing mass being connected to a driving mass, e.g. driving frames
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01C—MEASURING DISTANCES, LEVELS OR BEARINGS; SURVEYING; NAVIGATION; GYROSCOPIC INSTRUMENTS; PHOTOGRAMMETRY OR VIDEOGRAMMETRY
- G01C19/00—Gyroscopes; Turn-sensitive devices using vibrating masses; Turn-sensitive devices without moving masses; Measuring angular rate using gyroscopic effects
- G01C19/56—Turn-sensitive devices using vibrating masses, e.g. vibratory angular rate sensors based on Coriolis forces
- G01C19/5719—Turn-sensitive devices using vibrating masses, e.g. vibratory angular rate sensors based on Coriolis forces using planar vibrating masses driven in a translation vibration along an axis
- G01C19/5769—Manufacturing; Mounting; Housings
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01P—MEASURING LINEAR OR ANGULAR SPEED, ACCELERATION, DECELERATION, OR SHOCK; INDICATING PRESENCE, ABSENCE, OR DIRECTION, OF MOVEMENT
- G01P15/00—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration
- G01P15/02—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses
- G01P15/08—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values
- G01P15/0802—Details
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01P—MEASURING LINEAR OR ANGULAR SPEED, ACCELERATION, DECELERATION, OR SHOCK; INDICATING PRESENCE, ABSENCE, OR DIRECTION, OF MOVEMENT
- G01P15/00—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration
- G01P15/02—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses
- G01P15/08—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values
- G01P15/125—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values by capacitive pick-up
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01P—MEASURING LINEAR OR ANGULAR SPEED, ACCELERATION, DECELERATION, OR SHOCK; INDICATING PRESENCE, ABSENCE, OR DIRECTION, OF MOVEMENT
- G01P15/00—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration
- G01P15/18—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration in two or more dimensions
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B2201/00—Specific applications of microelectromechanical systems
- B81B2201/02—Sensors
- B81B2201/0228—Inertial sensors
- B81B2201/0235—Accelerometers
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B2203/00—Basic microelectromechanical structures
- B81B2203/03—Static structures
- B81B2203/0323—Grooves
- B81B2203/033—Trenches
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B2203/00—Basic microelectromechanical structures
- B81B2203/03—Static structures
- B81B2203/0369—Static structures characterized by their profile
- B81B2203/0392—Static structures characterized by their profile profiles not provided for in B81B2203/0376 - B81B2203/0384
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01P—MEASURING LINEAR OR ANGULAR SPEED, ACCELERATION, DECELERATION, OR SHOCK; INDICATING PRESENCE, ABSENCE, OR DIRECTION, OF MOVEMENT
- G01P15/00—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration
- G01P15/02—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses
- G01P15/08—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values
- G01P2015/0805—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values being provided with a particular type of spring-mass-system for defining the displacement of a seismic mass due to an external acceleration
- G01P2015/0808—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values being provided with a particular type of spring-mass-system for defining the displacement of a seismic mass due to an external acceleration for defining in-plane movement of the mass, i.e. movement of the mass in the plane of the substrate
- G01P2015/0811—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values being provided with a particular type of spring-mass-system for defining the displacement of a seismic mass due to an external acceleration for defining in-plane movement of the mass, i.e. movement of the mass in the plane of the substrate for one single degree of freedom of movement of the mass
- G01P2015/0814—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values being provided with a particular type of spring-mass-system for defining the displacement of a seismic mass due to an external acceleration for defining in-plane movement of the mass, i.e. movement of the mass in the plane of the substrate for one single degree of freedom of movement of the mass for translational movement of the mass, e.g. shuttle type
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01P—MEASURING LINEAR OR ANGULAR SPEED, ACCELERATION, DECELERATION, OR SHOCK; INDICATING PRESENCE, ABSENCE, OR DIRECTION, OF MOVEMENT
- G01P15/00—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration
- G01P15/02—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses
- G01P15/08—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values
- G01P2015/0805—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values being provided with a particular type of spring-mass-system for defining the displacement of a seismic mass due to an external acceleration
- G01P2015/0822—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values being provided with a particular type of spring-mass-system for defining the displacement of a seismic mass due to an external acceleration for defining out-of-plane movement of the mass
- G01P2015/084—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values being provided with a particular type of spring-mass-system for defining the displacement of a seismic mass due to an external acceleration for defining out-of-plane movement of the mass the mass being suspended at more than one of its sides, e.g. membrane-type suspension, so as to permit multi-axis movement of the mass
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Abstract
【解決手段】 本明細書では、半導体層にトレンチが形成された半導体装置を開示する。その半導体装置では、前記半導体層において、前記トレンチの幅が急変する箇所に、前記トレンチの幅の急変を補償する補償パターンが形成されている。上記の半導体装置では、半導体層において、トレンチの幅が急変する箇所に補償パターンが形成されているので、ディープRIE法によってトレンチ加工を行う際に、半導体の残渣の原因となる急峻な傾斜部の発生を抑制することができる。これによって、厚い半導体層に幅の狭いトレンチを形成する際に、半導体の残渣が発生することを防止することができる。
【選択図】 図4
Description
(特徴1)半導体層は、不純物を添加された単結晶シリコンからなる。
(特徴2)半導体層の下方に、酸化シリコンからなる酸化膜層が積層されている。
(特徴3)半導体層のトレンチは、ディープRIE法により形成される。
以下では図1−図3を参照しながら、実施例1に係る加速度センサ10の構造について説明する。図2、図3に示すように、加速度センサ10は、導電体からなる第1層20と、絶縁体からなる第2層30と、導電体からなる第3層40の積層構造を有している。具体的には、本実施例の加速度センサ10では、第1層20は不純物を添加した単結晶シリコンからなり、第2層30は酸化シリコンからなり、第3層40は不純物を添加した単結晶シリコンからなる、いわゆるSOI(Silicon on Insulator)構造を有している。本実施例の加速度センサ10では、第3層40は200μm〜400μm程度の厚みを有している。
トレンチの幅の急変を補償するための補償パターンの形状は、上記した補償パターン114a、116aのような形状に限られない。例えば、図12に示すように、固定電極114、可動電極116の先端部に、半円形状の補償パターン114b、116bを形成してもよい。あるいは、図13に示すように、固定電極114、可動電極116の先端部に、三角形状の補償パターン114c、116cを形成してもよい。これらの構成とした場合についても、固定電極114および可動電極116の先端部の近傍におけるトレンチの幅の急変を抑制し、シリコン残渣の発生を防止することができる。
以下では図34−図36を参照しながら、実施例2に係る角速度センサ90の構造について説明する。実施例1の加速度センサ10と同様に、本実施例の角速度センサ90は、導電体からなる第1層20と、絶縁体からなる第2層30と、導電体からなる第3層40の積層構造を有している。
Claims (6)
- 半導体層にトレンチが形成された半導体装置であって、
前記半導体層において、前記トレンチの幅が急変する箇所に、前記トレンチの幅の急変を補償する補償パターンが形成されている半導体装置。 - 前記半導体層に、前記トレンチによって三方を囲われた先端部が形成されており、
前記先端部の近傍において、前記トレンチの幅が急変しており、
前記補償パターンが、前記先端部に形成されている請求項1の半導体装置。 - 支持基板と可動構造体を備えており、
前記半導体層に、前記支持基板に対して位置を固定された櫛歯状の固定電極と、前記可動構造体に対して位置を固定された櫛歯状の可動電極が形成されており、
前記固定電極と前記可動電極が互いに対向して配置されており、
前記固定電極および/または前記可動電極の先端部に、前記補償パターンが形成されている請求項2の半導体装置。 - 前記半導体層に、前記トレンチによって三方を囲われた先端部が形成されており、
前記先端部の近傍において、前記トレンチの幅が急変しており、
前記補償パターンが、前記先端部に対向する箇所に形成されている請求項1の半導体装置。 - 支持基板と可動構造体を備えており、
前記半導体層に、前記支持基板に対して位置を固定された櫛歯状の固定電極と、前記可動構造体に対して位置を固定された櫛歯状の可動電極が形成されており、
前記固定電極と前記可動電極が互いに対向して配置されており、
前記固定電極および/または前記可動電極の先端部に対向する箇所に、前記補償パターンが形成されている請求項4の半導体装置。 - 前記半導体層の厚みが200μm以上であり、前記トレンチの最小の幅に対する前記トレンチの深さの比率が20以上である請求項1から5の何れか一項の半導体装置。
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JP2012122267A JP5696686B2 (ja) | 2011-08-30 | 2012-05-29 | 半導体装置 |
US13/596,859 US8698315B2 (en) | 2011-08-30 | 2012-08-28 | Semiconductor device |
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JP2012122267A JP5696686B2 (ja) | 2011-08-30 | 2012-05-29 | 半導体装置 |
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CN104166016B (zh) * | 2013-05-16 | 2016-06-01 | 中国科学院地质与地球物理研究所 | 一种高灵敏度三轴mems加速度计及其制造工艺 |
US10167187B2 (en) * | 2013-07-09 | 2019-01-01 | Seiko Epson Corporation | Physical quantity sensor having an elongated groove, and manufacturing method thereof |
US9816954B2 (en) * | 2014-01-31 | 2017-11-14 | Stmicroelectronics S.R.L. | Sensor of volatile substances and process for manufacturing a sensor of volatile substances |
US9841393B2 (en) | 2014-01-31 | 2017-12-12 | Stmicroelectronics S.R.L. | Sensor of volatile substances with integrated heater and process for manufacturing a sensor of volatile substances |
JP6822200B2 (ja) * | 2017-02-17 | 2021-01-27 | セイコーエプソン株式会社 | 物理量センサー、物理量センサーデバイス、電子機器および移動体 |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH11326365A (ja) * | 1998-05-11 | 1999-11-26 | Denso Corp | 半導体力学量センサ |
JP2000206142A (ja) * | 1998-11-13 | 2000-07-28 | Denso Corp | 半導体力学量センサおよびその製造方法 |
WO2001053194A1 (en) * | 2000-01-19 | 2001-07-26 | Mitsubishi Denki Kabushiki Kaisha | Microdevice and its production method |
JP2001227954A (ja) * | 2000-02-15 | 2001-08-24 | Toyota Motor Corp | 物理量検出装置 |
Family Cites Families (20)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0890431A (ja) | 1994-09-27 | 1996-04-09 | Shimadzu Corp | マイクログリッパおよびその製造方法 |
US6351057B1 (en) | 1999-01-25 | 2002-02-26 | Samsung Electro-Mechanics Co., Ltd | Microactuator and method for fabricating the same |
JP2002341513A (ja) * | 2001-05-15 | 2002-11-27 | Oki Electric Ind Co Ltd | 露光用マスク及びそれを用いた半導体装置の製造方法 |
JP4117450B2 (ja) * | 2002-03-18 | 2008-07-16 | 株式会社デンソー | 半導体装置の製造方法 |
KR100454131B1 (ko) * | 2002-06-05 | 2004-10-26 | 삼성전자주식회사 | 라인형 패턴을 갖는 반도체 소자 및 그 레이아웃 방법 |
US6822716B2 (en) * | 2002-12-10 | 2004-11-23 | Hannstar Display Corp. | In-plane switching liquid crystal display with an alignment free structure and method of using back exposure to form the same |
JP4322516B2 (ja) * | 2003-02-17 | 2009-09-02 | エルピーダメモリ株式会社 | 半導体装置 |
JP2004354605A (ja) * | 2003-05-28 | 2004-12-16 | Matsushita Electric Ind Co Ltd | 半導体設計レイアウトパタン生成方法および図形パタン生成装置 |
US7037820B2 (en) * | 2004-01-30 | 2006-05-02 | Agere Systems Inc. | Cross-fill pattern for metal fill levels, power supply filtering, and analog circuit shielding |
JP4761810B2 (ja) | 2004-04-26 | 2011-08-31 | パナソニック株式会社 | マイクロアクチュエータ |
EP1591824B1 (en) | 2004-04-26 | 2012-05-09 | Panasonic Corporation | Microactuator |
JP2006201519A (ja) | 2005-01-20 | 2006-08-03 | Ricoh Co Ltd | 光走査装置及び画像形成装置 |
JP4597902B2 (ja) * | 2006-04-06 | 2010-12-15 | Tdk株式会社 | レジストパターンの形成方法および垂直磁気記録ヘッドの製造方法 |
DE102006049887A1 (de) * | 2006-10-23 | 2008-04-24 | Robert Bosch Gmbh | Drehratensensor mit Quadraturkompensationsstruktur |
JP2008224525A (ja) | 2007-03-14 | 2008-09-25 | Hitachi Metals Ltd | 3軸加速度センサー |
JP5103232B2 (ja) * | 2008-03-18 | 2012-12-19 | ルネサスエレクトロニクス株式会社 | 半導体装置 |
TWI374268B (en) * | 2008-09-05 | 2012-10-11 | Ind Tech Res Inst | Multi-axis capacitive accelerometer |
JP2010161179A (ja) | 2009-01-07 | 2010-07-22 | Sony Corp | 半導体素子の製造方法、センサ、電子機器 |
JP5695928B2 (ja) * | 2010-04-14 | 2015-04-08 | 東京応化工業株式会社 | 櫛型電極の製造方法 |
KR101807729B1 (ko) * | 2010-12-31 | 2017-12-12 | 삼성디스플레이 주식회사 | 액정 표시 장치 |
-
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- 2012-05-29 JP JP2012122267A patent/JP5696686B2/ja not_active Expired - Fee Related
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Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH11326365A (ja) * | 1998-05-11 | 1999-11-26 | Denso Corp | 半導体力学量センサ |
JP2000206142A (ja) * | 1998-11-13 | 2000-07-28 | Denso Corp | 半導体力学量センサおよびその製造方法 |
WO2001053194A1 (en) * | 2000-01-19 | 2001-07-26 | Mitsubishi Denki Kabushiki Kaisha | Microdevice and its production method |
JP2001227954A (ja) * | 2000-02-15 | 2001-08-24 | Toyota Motor Corp | 物理量検出装置 |
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