CN104166016B - 一种高灵敏度三轴mems加速度计及其制造工艺 - Google Patents
一种高灵敏度三轴mems加速度计及其制造工艺 Download PDFInfo
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- CN104166016B CN104166016B CN201310182168.4A CN201310182168A CN104166016B CN 104166016 B CN104166016 B CN 104166016B CN 201310182168 A CN201310182168 A CN 201310182168A CN 104166016 B CN104166016 B CN 104166016B
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- 238000004519 manufacturing process Methods 0.000 title claims description 27
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 175
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 172
- 239000010703 silicon Substances 0.000 claims abstract description 172
- 230000001133 acceleration Effects 0.000 claims abstract description 48
- 238000005259 measurement Methods 0.000 claims abstract description 30
- 230000008878 coupling Effects 0.000 claims abstract description 12
- 238000010168 coupling process Methods 0.000 claims abstract description 12
- 238000005859 coupling reaction Methods 0.000 claims abstract description 12
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 58
- 238000005530 etching Methods 0.000 claims description 40
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 claims description 29
- 239000000377 silicon dioxide Substances 0.000 claims description 28
- 235000012239 silicon dioxide Nutrition 0.000 claims description 28
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 claims description 27
- 238000000034 method Methods 0.000 claims description 26
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 21
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 20
- 238000001259 photo etching Methods 0.000 claims description 12
- 238000001312 dry etching Methods 0.000 claims description 10
- SBEQWOXEGHQIMW-UHFFFAOYSA-N silicon Chemical compound [Si].[Si] SBEQWOXEGHQIMW-UHFFFAOYSA-N 0.000 claims description 10
- NSOXQYCFHDMMGV-UHFFFAOYSA-N Tetrakis(2-hydroxypropyl)ethylenediamine Chemical compound CC(O)CN(CC(C)O)CCN(CC(C)O)CC(C)O NSOXQYCFHDMMGV-UHFFFAOYSA-N 0.000 claims description 8
- YTTMKLDTYRCKCB-UHFFFAOYSA-N [P].OC1=CC=CC=C1O Chemical compound [P].OC1=CC=CC=C1O YTTMKLDTYRCKCB-UHFFFAOYSA-N 0.000 claims description 8
- 239000003153 chemical reaction reagent Substances 0.000 claims description 8
- 238000000151 deposition Methods 0.000 claims description 7
- 238000000605 extraction Methods 0.000 claims description 6
- 229910052751 metal Inorganic materials 0.000 claims description 6
- 239000002184 metal Substances 0.000 claims description 6
- 230000015572 biosynthetic process Effects 0.000 claims description 5
- 238000006243 chemical reaction Methods 0.000 claims description 5
- 229910000040 hydrogen fluoride Inorganic materials 0.000 claims description 5
- 238000000992 sputter etching Methods 0.000 claims description 5
- 238000001020 plasma etching Methods 0.000 claims description 4
- 230000000994 depressogenic effect Effects 0.000 claims description 3
- 230000000694 effects Effects 0.000 claims description 3
- 230000003647 oxidation Effects 0.000 claims description 3
- 238000007254 oxidation reaction Methods 0.000 claims description 3
- 238000001039 wet etching Methods 0.000 claims description 3
- BLIQUJLAJXRXSG-UHFFFAOYSA-N 1-benzyl-3-(trifluoromethyl)pyrrolidin-1-ium-3-carboxylate Chemical compound C1C(C(=O)O)(C(F)(F)F)CCN1CC1=CC=CC=C1 BLIQUJLAJXRXSG-UHFFFAOYSA-N 0.000 claims description 2
- 238000005234 chemical deposition Methods 0.000 claims description 2
- 239000012212 insulator Substances 0.000 claims description 2
- 230000008859 change Effects 0.000 abstract description 10
- 239000010410 layer Substances 0.000 description 114
- 238000001514 detection method Methods 0.000 description 15
- 235000012431 wafers Nutrition 0.000 description 15
- 238000010586 diagram Methods 0.000 description 9
- 229920002120 photoresistant polymer Polymers 0.000 description 7
- 230000008569 process Effects 0.000 description 6
- 238000006073 displacement reaction Methods 0.000 description 5
- 238000004064 recycling Methods 0.000 description 5
- 238000000354 decomposition reaction Methods 0.000 description 4
- 230000007423 decrease Effects 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 4
- 150000002500 ions Chemical class 0.000 description 4
- 230000035945 sensitivity Effects 0.000 description 3
- 238000004140 cleaning Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 238000004062 sedimentation Methods 0.000 description 2
- 229910052814 silicon oxide Inorganic materials 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 238000005452 bending Methods 0.000 description 1
- JZCCFEFSEZPSOG-UHFFFAOYSA-L copper(II) sulfate pentahydrate Chemical compound O.O.O.O.O.[Cu+2].[O-]S([O-])(=O)=O JZCCFEFSEZPSOG-UHFFFAOYSA-L 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
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- 230000008021 deposition Effects 0.000 description 1
- 239000002355 dual-layer Substances 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- MNTPMEHIQKUBIC-UHFFFAOYSA-N silicon;hydrofluoride Chemical compound F.[Si] MNTPMEHIQKUBIC-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01P—MEASURING LINEAR OR ANGULAR SPEED, ACCELERATION, DECELERATION, OR SHOCK; INDICATING PRESENCE, ABSENCE, OR DIRECTION, OF MOVEMENT
- G01P15/00—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration
- G01P15/02—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses
- G01P15/08—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values
- G01P15/125—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values by capacitive pick-up
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01P—MEASURING LINEAR OR ANGULAR SPEED, ACCELERATION, DECELERATION, OR SHOCK; INDICATING PRESENCE, ABSENCE, OR DIRECTION, OF MOVEMENT
- G01P15/00—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration
- G01P15/02—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses
- G01P15/08—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values
- G01P15/0802—Details
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01P—MEASURING LINEAR OR ANGULAR SPEED, ACCELERATION, DECELERATION, OR SHOCK; INDICATING PRESENCE, ABSENCE, OR DIRECTION, OF MOVEMENT
- G01P15/00—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration
- G01P15/18—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration in two or more dimensions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
- H01L21/02164—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material being a silicon oxide, e.g. SiO2
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/3065—Plasma etching; Reactive-ion etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/31051—Planarisation of the insulating layers
- H01L21/31053—Planarisation of the insulating layers involving a dielectric removal step
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Plasma & Fusion (AREA)
- Pressure Sensors (AREA)
Abstract
Description
Claims (15)
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201310182168.4A CN104166016B (zh) | 2013-05-16 | 2013-05-16 | 一种高灵敏度三轴mems加速度计及其制造工艺 |
US14/270,581 US9829504B2 (en) | 2013-05-16 | 2014-05-06 | Tri-axial MEMS accelerometer |
US15/794,928 US10900995B2 (en) | 2013-05-16 | 2017-10-26 | Tri-axial MEMS accelerometer |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201310182168.4A CN104166016B (zh) | 2013-05-16 | 2013-05-16 | 一种高灵敏度三轴mems加速度计及其制造工艺 |
Publications (2)
Publication Number | Publication Date |
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CN104166016A CN104166016A (zh) | 2014-11-26 |
CN104166016B true CN104166016B (zh) | 2016-06-01 |
Family
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Family Applications (1)
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CN201310182168.4A Active CN104166016B (zh) | 2013-05-16 | 2013-05-16 | 一种高灵敏度三轴mems加速度计及其制造工艺 |
Country Status (2)
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US (2) | US9829504B2 (zh) |
CN (1) | CN104166016B (zh) |
Families Citing this family (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20160161944A1 (en) * | 2014-12-05 | 2016-06-09 | Charles A. Leonard | Vehicle leveling systems, devices and methods and computer program products for leveling vehicles using smart devices |
CN106033091B (zh) * | 2015-03-11 | 2022-04-29 | 中芯国际集成电路制造(上海)有限公司 | 一种mems加速度传感器及其制备方法、电子装置 |
CN106500682B (zh) * | 2016-10-12 | 2019-10-22 | 中国科学院地质与地球物理研究所 | 一种mems陀螺仪 |
CN107934905B (zh) * | 2017-11-24 | 2020-02-28 | 中国矿业大学 | 一种微机电系统的运动部件及其加工方法 |
CN110887977B (zh) * | 2019-11-28 | 2021-12-07 | 上海应用技术大学 | 一种纳米级压阻式加速度传感器及其制备方法 |
CN113391095B (zh) * | 2020-03-12 | 2022-12-02 | 北京微元时代科技有限公司 | 一种单质量全对称三轴硅微加速度计 |
CN115166297B (zh) * | 2022-02-21 | 2024-02-23 | 东南大学 | 一种基于石墨烯moems加速度计及其加工方法 |
CN116519977B (zh) * | 2023-07-05 | 2023-10-17 | 河北科昕电子科技有限公司 | 一种微型六轴集成加速度计陀螺仪的惯性传感器 |
CN117192155B (zh) * | 2023-11-02 | 2024-01-26 | 苏州敏芯微电子技术股份有限公司 | 单质量三轴mems加速度传感器和电子设备 |
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WO2009016900A1 (ja) * | 2007-07-27 | 2009-02-05 | Hitachi Metals, Ltd. | 加速度センサー |
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2013
- 2013-05-16 CN CN201310182168.4A patent/CN104166016B/zh active Active
-
2014
- 2014-05-06 US US14/270,581 patent/US9829504B2/en active Active
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2017
- 2017-10-26 US US15/794,928 patent/US10900995B2/en active Active
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CN1576852A (zh) * | 2003-06-25 | 2005-02-09 | 松下电工株式会社 | 半导体加速度传感器及其制备方法 |
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Also Published As
Publication number | Publication date |
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US20140338452A1 (en) | 2014-11-20 |
US9829504B2 (en) | 2017-11-28 |
US10900995B2 (en) | 2021-01-26 |
US20180045753A1 (en) | 2018-02-15 |
CN104166016A (zh) | 2014-11-26 |
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Denomination of invention: High-sensitivity three-shaft MEMS accelerometer and manufacturing process thereof Effective date of registration: 20181024 Granted publication date: 20160601 Pledgee: Bank of Jiaxing science and technology branch of Limited by Share Ltd Pledgor: Zhejiang core technology Co., Ltd. Registration number: 2018330000332 |