JP2013053324A - スパッタリングターゲット及びそれを用いた磁気メモリの製造方法 - Google Patents
スパッタリングターゲット及びそれを用いた磁気メモリの製造方法 Download PDFInfo
- Publication number
- JP2013053324A JP2013053324A JP2011190868A JP2011190868A JP2013053324A JP 2013053324 A JP2013053324 A JP 2013053324A JP 2011190868 A JP2011190868 A JP 2011190868A JP 2011190868 A JP2011190868 A JP 2011190868A JP 2013053324 A JP2013053324 A JP 2013053324A
- Authority
- JP
- Japan
- Prior art keywords
- target
- sputtering
- backing plate
- sputtering target
- mgo
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Images
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/08—Oxides
- C23C14/082—Oxides of alkaline earth metals
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/08—Oxides
- C23C14/081—Oxides of aluminium, magnesium or beryllium
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
- C23C14/3414—Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B61/00—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices
- H10B61/20—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices comprising components having three or more electrodes, e.g. transistors
- H10B61/22—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices comprising components having three or more electrodes, e.g. transistors of the field-effect transistor [FET] type
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N50/00—Galvanomagnetic devices
- H10N50/01—Manufacture or treatment
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
- G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
- G11C11/161—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect details concerning the memory cell structure, e.g. the layers of the ferromagnetic memory cell
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Manufacturing & Machinery (AREA)
- Mram Or Spin Memory Techniques (AREA)
- Hall/Mr Elements (AREA)
- Compositions Of Oxide Ceramics (AREA)
- Physical Vapour Deposition (AREA)
Abstract
【解決手段】MgOを主成分とし、厚さが3mm以下であるターゲット本体10を備えることを特徴とするスパッタリングターゲット、及びそれを用いた、MR比を向上させることができる磁気メモリの製造方法である。
【選択図】図1
Description
MgOの厚さを3mmまで薄くすることでVdcの絶対値が低減するメカニズムを以下に説明する。MgOは絶縁体のため、静電容量C1を有する。MgOの薄片化によってC1が増加すると、アノード側の静電容量C2との差が小さくなる。VdcはC1とC2の差に比例するため、MgOの薄片化によるC1の増加によってC1とC2の差が小さくなり、Vdcの絶対値が低減する。さらにプラズマを閉じ込めるマグネットの強度が増したことによる放電安定電界の低減によるものと考えられる。MgOの厚さが3mm以下になるとVdcが一定となるのは、VdcはMgOが放出する2次電子の放出量によって決められるためと考えられる。Vdcの絶対値の下限を決める3mmという値はターゲット本体(MgO)の材料によって決定される値と言える。一方、MgOの厚さを薄くすると十分な強度が保てなくなるため、0.1mm以上の厚さが必要である。本実施形態において、ターゲット本体及びバッキングプレートの厚さは、例えばノギス、マイクロメーターなどによって測定される。
また、各々に磁気トンネル接合素子を含む複数のメモリセルを有し、メモリセルへのデータの書き込み及びメモリセルからのデータの読み出しを行う磁気メモリの製造方法であって、磁気トンネル接合素子は、第1乃至第7実施形態で説明したいずれかのスパッタリングターゲットを用いたスパッタリング成膜によってトンネル障壁層を形成し、トンネル障壁層に接する面にそれぞれ磁気記憶層と磁気参照層を形成することを特徴とする磁気メモリの製造方法を提供する。
12 バッキングプレート
14 ホルダ
16 ねじ穴
Claims (10)
- MgOを主成分とし、厚さが3mm以下であるターゲット本体を備えることを特徴とするスパッタリングターゲット。
- 前記スパッタリングターゲットは、磁気トンネル接合素子用であることを特徴とする請求項1記載のスパッタリングターゲット。
- 前記バッキングプレートは、ステンレス鋼、Al合金及びW合金のいずれかからなることを特徴とする請求項3記載のスパッタリングターゲット。
- 前記ターゲット本体上面の外縁近傍には、ターゲット本体の上面を露出させた状態で前記スパッタリングターゲットをスパッタリング装置に固定させる冶具を設置させる穴が形成されていることを特徴とする請求項1乃至5いずれか記載のスパッタリングターゲット。
- 各々に磁気トンネル接合素子を含む複数のメモリセルを有し、前記メモリセルへのデータの書き込み及び前記メモリセルからのデータの読み出しを行う磁気メモリの製造方法であって、前記磁気トンネル接合素子は、請求項1乃至9いずれか記載のスパッタリングターゲットを用いたスパッタリング成膜によってトンネル障壁層を形成し、前記トンネル障壁層に接する面にそれぞれ磁気記憶層と磁気参照層を形成することを特徴とする磁気メモリの製造方法。
Priority Applications (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2011190868A JP5995419B2 (ja) | 2011-09-01 | 2011-09-01 | スパッタリングターゲット及びそれを用いた磁気メモリの製造方法 |
KR1020120095927A KR20130025341A (ko) | 2011-09-01 | 2012-08-30 | 스퍼터링 타깃 및 그것을 이용한 자기 메모리의 제조 방법 |
US13/600,812 US20130056349A1 (en) | 2011-09-01 | 2012-08-31 | Sputtering target and method of manufacturing magnetic memory using the same |
KR1020170027361A KR20170028919A (ko) | 2011-09-01 | 2017-03-02 | 스퍼터링 타깃 및 그것을 이용한 자기 메모리의 제조 방법 |
KR1020170165267A KR20170138976A (ko) | 2011-09-01 | 2017-12-04 | 스퍼터링 타깃 및 그것을 이용한 자기 메모리의 제조 방법 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2011190868A JP5995419B2 (ja) | 2011-09-01 | 2011-09-01 | スパッタリングターゲット及びそれを用いた磁気メモリの製造方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2013053324A true JP2013053324A (ja) | 2013-03-21 |
JP5995419B2 JP5995419B2 (ja) | 2016-09-21 |
Family
ID=47752281
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2011190868A Expired - Fee Related JP5995419B2 (ja) | 2011-09-01 | 2011-09-01 | スパッタリングターゲット及びそれを用いた磁気メモリの製造方法 |
Country Status (3)
Country | Link |
---|---|
US (1) | US20130056349A1 (ja) |
JP (1) | JP5995419B2 (ja) |
KR (3) | KR20130025341A (ja) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2014231639A (ja) * | 2013-04-30 | 2014-12-11 | 株式会社コベルコ科研 | Li含有酸化物ターゲット接合体 |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR102470367B1 (ko) | 2017-11-24 | 2022-11-24 | 삼성전자주식회사 | 자기 저항 메모리 소자의 제조 방법 |
CN112063977A (zh) * | 2020-09-18 | 2020-12-11 | 长沙神弧离子镀膜有限公司 | 高钪铝钪合金靶及其靶材绑定方法 |
CN115595541A (zh) * | 2021-06-28 | 2023-01-13 | 北京超弦存储器研究院(Cn) | 一种可基于溅射功率调整ra值原理的隧穿磁电阻和磁性随机存储器的制备方法 |
Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH04325675A (ja) * | 1991-04-24 | 1992-11-16 | Victor Co Of Japan Ltd | 強磁性体のマグネトロンスパッタ装置 |
JP2003226967A (ja) * | 2002-02-05 | 2003-08-15 | Shibaura Mechatronics Corp | 成膜装置 |
JP2004052082A (ja) * | 2002-07-23 | 2004-02-19 | Sumitomo Metal Mining Co Ltd | スパッタリングターゲット組立体 |
JP2004307989A (ja) * | 2003-02-21 | 2004-11-04 | Japan Aviation Electronics Industry Ltd | イオンビームスパッタ用ターゲットおよびこれを具備するイオンビームスパッタ装置 |
JP2006002208A (ja) * | 2004-06-17 | 2006-01-05 | Tateho Chem Ind Co Ltd | 単結晶酸化マグネシウム焼結体及びその製造方法並びにプラズマディスプレイパネル用保護膜 |
JP2008226987A (ja) * | 2007-03-09 | 2008-09-25 | Ulvac Japan Ltd | 磁気抵抗素子の製造方法、磁気デバイスの製造方法、磁気抵抗素子の製造装置および磁気デバイスの製造装置 |
WO2009028347A1 (ja) * | 2007-08-31 | 2009-03-05 | Mitsui Kinzoku Korea Co., Ltd. | スパッタリングターゲット |
Family Cites Families (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE3381593D1 (de) * | 1982-10-05 | 1990-06-28 | Fujitsu Ltd | Zerstaeubungsvorrichtung. |
US5099294A (en) * | 1989-08-01 | 1992-03-24 | The United States Of America As Represented By The Administrator Of The National Aeronautics And Space Administration | Edge geometry superconducting tunnel junctions utilizing an NbN/MgO/NbN thin film structure |
US6689254B1 (en) * | 1990-10-31 | 2004-02-10 | Tokyo Electron Limited | Sputtering apparatus with isolated coolant and sputtering target therefor |
JPH06108241A (ja) * | 1992-09-30 | 1994-04-19 | Shibaura Eng Works Co Ltd | スパッタリング装置 |
GB2318590B (en) * | 1995-07-10 | 1999-04-14 | Cvc Products Inc | Magnetron cathode apparatus and method for sputtering |
US6039848A (en) * | 1995-07-10 | 2000-03-21 | Cvc Products, Inc. | Ultra-high vacuum apparatus and method for high productivity physical vapor deposition. |
JP5231823B2 (ja) * | 2008-01-28 | 2013-07-10 | 日本タングステン株式会社 | 多結晶MgO焼結体及びその製造方法、並びにスパッタリング用MgOターゲット |
EP2506347B1 (en) * | 2009-11-27 | 2018-04-25 | Nissan Motor Co., Ltd | Si alloy negative electrode active material for electrical device |
-
2011
- 2011-09-01 JP JP2011190868A patent/JP5995419B2/ja not_active Expired - Fee Related
-
2012
- 2012-08-30 KR KR1020120095927A patent/KR20130025341A/ko active Application Filing
- 2012-08-31 US US13/600,812 patent/US20130056349A1/en not_active Abandoned
-
2017
- 2017-03-02 KR KR1020170027361A patent/KR20170028919A/ko active Application Filing
- 2017-12-04 KR KR1020170165267A patent/KR20170138976A/ko active Search and Examination
Patent Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH04325675A (ja) * | 1991-04-24 | 1992-11-16 | Victor Co Of Japan Ltd | 強磁性体のマグネトロンスパッタ装置 |
JP2003226967A (ja) * | 2002-02-05 | 2003-08-15 | Shibaura Mechatronics Corp | 成膜装置 |
JP2004052082A (ja) * | 2002-07-23 | 2004-02-19 | Sumitomo Metal Mining Co Ltd | スパッタリングターゲット組立体 |
JP2004307989A (ja) * | 2003-02-21 | 2004-11-04 | Japan Aviation Electronics Industry Ltd | イオンビームスパッタ用ターゲットおよびこれを具備するイオンビームスパッタ装置 |
JP2006002208A (ja) * | 2004-06-17 | 2006-01-05 | Tateho Chem Ind Co Ltd | 単結晶酸化マグネシウム焼結体及びその製造方法並びにプラズマディスプレイパネル用保護膜 |
JP2008226987A (ja) * | 2007-03-09 | 2008-09-25 | Ulvac Japan Ltd | 磁気抵抗素子の製造方法、磁気デバイスの製造方法、磁気抵抗素子の製造装置および磁気デバイスの製造装置 |
WO2009028347A1 (ja) * | 2007-08-31 | 2009-03-05 | Mitsui Kinzoku Korea Co., Ltd. | スパッタリングターゲット |
Non-Patent Citations (1)
Title |
---|
JPN6015034031; Tatsuo Ishijima et. al: 'Spatial Variation of Negative Oxygen Ion Energy Distribution in RF Magnetron Plasma with Oxide Targe' Japanese Journal of Applied Physics Vol.48, 20091120, 116004-1-116004-4, The Japan society of Applied Physics * |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2014231639A (ja) * | 2013-04-30 | 2014-12-11 | 株式会社コベルコ科研 | Li含有酸化物ターゲット接合体 |
Also Published As
Publication number | Publication date |
---|---|
US20130056349A1 (en) | 2013-03-07 |
JP5995419B2 (ja) | 2016-09-21 |
KR20170028919A (ko) | 2017-03-14 |
KR20130025341A (ko) | 2013-03-11 |
KR20170138976A (ko) | 2017-12-18 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US11930717B2 (en) | Minimal thickness synthetic antiferromagnetic (SAF) structure with perpendicular magnetic anisotropy for STT-MRAM | |
JP5214691B2 (ja) | 磁気メモリ及びその製造方法 | |
JP5710743B2 (ja) | 磁気トンネル接合記憶素子の製造 | |
US9780298B2 (en) | Magnetoresistive element | |
US8653614B2 (en) | Semiconductor memory device and method for manufacturing the same | |
US8691596B2 (en) | Magnetoresistive element and method of manufacturing the same | |
JP5647351B2 (ja) | 磁気抵抗効果素子の製造方法及び磁気抵抗効果膜の加工方法 | |
US7834410B2 (en) | Spin torque transfer magnetic tunnel junction structure | |
JP5535161B2 (ja) | 磁気抵抗効果素子およびその製造方法 | |
US8531875B2 (en) | Magnetic memory | |
US8963264B2 (en) | Magnetic stack with orthogonal biasing layer | |
US20100097846A1 (en) | Magnetoresistive element and magnetic memory | |
US20180309048A1 (en) | Magnetoresistive effect element and magnetic memory | |
KR20170138976A (ko) | 스퍼터링 타깃 및 그것을 이용한 자기 메모리의 제조 방법 | |
US8878321B2 (en) | Magnetoresistive element and producing method thereof | |
JP2017510989A (ja) | Mram装置用の磁気トンネル接合構造 | |
US9705072B2 (en) | Spin transfer torque tunneling magnetoresistive device having a laminated free layer with perpendicular magnetic anisotropy | |
JP2013197524A (ja) | 磁気抵抗効果素子の製造方法 | |
US20100103565A1 (en) | St-ram employing heusler alloys | |
TWI782240B (zh) | 積體電路及其製造方法 | |
US20200075842A1 (en) | Ferromagnetic tunnel junction element and method of manufacturing the same | |
US9425388B2 (en) | Magnetic element and method of manufacturing the same | |
US10211256B2 (en) | Magnetic memory device with stack structure including first and second magnetic layers and nonmagnetic layer between the first and second magnetic layers | |
JP2011054903A (ja) | 半導体装置およびその製造方法 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
RD01 | Notification of change of attorney |
Free format text: JAPANESE INTERMEDIATE CODE: A7421 Effective date: 20130225 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A821 Effective date: 20130225 |
|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20140528 |
|
A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20150113 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20150127 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20150326 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20150825 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20151026 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20151110 |
|
A02 | Decision of refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A02 Effective date: 20160315 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20160615 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20160623 |
|
A911 | Transfer to examiner for re-examination before appeal (zenchi) |
Free format text: JAPANESE INTERMEDIATE CODE: A911 Effective date: 20160629 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20160802 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20160823 |
|
R150 | Certificate of patent or registration of utility model |
Ref document number: 5995419 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
S111 | Request for change of ownership or part of ownership |
Free format text: JAPANESE INTERMEDIATE CODE: R313115 |
|
R350 | Written notification of registration of transfer |
Free format text: JAPANESE INTERMEDIATE CODE: R350 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
LAPS | Cancellation because of no payment of annual fees |