WO2009028347A1 - スパッタリングターゲット - Google Patents

スパッタリングターゲット Download PDF

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Publication number
WO2009028347A1
WO2009028347A1 PCT/JP2008/064717 JP2008064717W WO2009028347A1 WO 2009028347 A1 WO2009028347 A1 WO 2009028347A1 JP 2008064717 W JP2008064717 W JP 2008064717W WO 2009028347 A1 WO2009028347 A1 WO 2009028347A1
Authority
WO
WIPO (PCT)
Prior art keywords
target material
divided
sputtering target
material pieces
end section
Prior art date
Application number
PCT/JP2008/064717
Other languages
English (en)
French (fr)
Inventor
Yoichi Koga
Donggu Ji
Original Assignee
Mitsui Kinzoku Korea Co., Ltd.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsui Kinzoku Korea Co., Ltd. filed Critical Mitsui Kinzoku Korea Co., Ltd.
Priority to KR1020097011655A priority Critical patent/KR101110801B1/ko
Priority to CN2008800018239A priority patent/CN101578387B/zh
Publication of WO2009028347A1 publication Critical patent/WO2009028347A1/ja

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/08—Oxides

Landscapes

  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physical Vapour Deposition (AREA)

Abstract

　本発明は、相互に厚さの相違する分割ターゲット材から構成されるスパッタリングターゲットにおいて、各分割ターゲット材の隣接部に形設される間隙から容易にボンディング材を除去することができる、スパッタリングターゲットを提供することを目的とする。本発明のスパッタリングターゲットは、複数の分割ターゲット材から構成されるターゲット材とバッキングプレートとを、ボンディング材を介して一体的に接合したスパッタリングターゲットであって、前記バッキングプレートが断面略凸状に形成されているとともに、前記分割ターゲット材のうち、前記スパッタリングターゲットの端部に配置される端部分割ターゲット材が断面略Ｌ字状に形成され、かつ前記端部ターゲット材以外の分割ターゲット材が平板状に形成されていることを特徴とする。
PCT/JP2008/064717 2007-08-31 2008-08-19 スパッタリングターゲット WO2009028347A1 (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
KR1020097011655A KR101110801B1 (ko) 2007-08-31 2008-08-19 스퍼터링 타겟
CN2008800018239A CN101578387B (zh) 2007-08-31 2008-08-19 溅射靶

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2007-225707 2007-08-31
JP2007225707A JP5228245B2 (ja) 2007-08-31 2007-08-31 スパッタリングターゲット

Publications (1)

Publication Number Publication Date
WO2009028347A1 true WO2009028347A1 (ja) 2009-03-05

Family

ID=40387072

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2008/064717 WO2009028347A1 (ja) 2007-08-31 2008-08-19 スパッタリングターゲット

Country Status (5)

Country Link
JP (1) JP5228245B2 (ja)
KR (1) KR101110801B1 (ja)
CN (1) CN101578387B (ja)
TW (1) TWI383060B (ja)
WO (1) WO2009028347A1 (ja)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101733495B (zh) * 2009-11-11 2012-09-19 宁波江丰电子材料有限公司 拼接靶材形成方法
JP2013053324A (ja) * 2011-09-01 2013-03-21 Toshiba Corp スパッタリングターゲット及びそれを用いた磁気メモリの製造方法
CN112831763A (zh) * 2020-12-25 2021-05-25 安徽立光电子材料股份有限公司 一种靶材再生处理及粘靶方法

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4723668B2 (ja) * 2009-12-25 2011-07-13 Ｊｘ日鉱日石金属株式会社 ターゲットバッキングプレート組立体
CN101921989A (zh) * 2010-06-30 2010-12-22 昆山工研院新型平板显示技术中心有限公司 一种可提高溅射工艺靶材利用率的方法
EP2748351A1 (en) * 2011-08-25 2014-07-02 Applied Materials, Inc. Sputtering apparatus and method
WO2017217987A1 (en) * 2016-06-16 2017-12-21 Applied Materials, Inc. Apparatus for material deposition on a substrate in a vacuum deposition process, system for sputter deposition on a substrate, and method for manufacture of an apparatus for material deposition on a substrate
CN106337167A (zh) * 2016-08-30 2017-01-18 芜湖映日科技有限公司 多片拼接靶材绑定方法
CN110431252A (zh) * 2017-03-31 2019-11-08 三井金属矿业株式会社 分割溅射靶
CN112059345B (zh) * 2020-08-31 2022-07-15 宁波江丰电子材料股份有限公司 一种高纯铝靶材组件的钎焊方法及高纯铝靶材组件

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000204468A (ja) * 1999-01-08 2000-07-25 Tosoh Corp 多分割スパッタリングタ―ゲット
JP2000345326A (ja) * 1999-06-01 2000-12-12 Tosoh Corp 分割ｉｔｏスパッタリングターゲット
JP2004083985A (ja) * 2002-08-26 2004-03-18 Mitsui Mining & Smelting Co Ltd スパッタリングターゲットおよびその製造方法

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4599688B2 (ja) * 2000-08-04 2010-12-15 東ソー株式会社 スパッタリングターゲットの製造方法
JP2003155563A (ja) * 2001-11-20 2003-05-30 Tosoh Corp 長尺多分割ｉｔｏスパッタリングターゲット
JP4376637B2 (ja) * 2004-01-14 2009-12-02 Ｈｏｙａ株式会社 スパッタリングターゲット及びこれを用いたマスクブランクの製造方法
CN1952208A (zh) * 2006-08-25 2007-04-25 上海贺利氏工业技术材料有限公司 一种磁控溅射镀膜用低熔点金属与背板加工工艺

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000204468A (ja) * 1999-01-08 2000-07-25 Tosoh Corp 多分割スパッタリングタ―ゲット
JP2000345326A (ja) * 1999-06-01 2000-12-12 Tosoh Corp 分割ｉｔｏスパッタリングターゲット
JP2004083985A (ja) * 2002-08-26 2004-03-18 Mitsui Mining & Smelting Co Ltd スパッタリングターゲットおよびその製造方法

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101733495B (zh) * 2009-11-11 2012-09-19 宁波江丰电子材料有限公司 拼接靶材形成方法
JP2013053324A (ja) * 2011-09-01 2013-03-21 Toshiba Corp スパッタリングターゲット及びそれを用いた磁気メモリの製造方法
CN112831763A (zh) * 2020-12-25 2021-05-25 安徽立光电子材料股份有限公司 一种靶材再生处理及粘靶方法
CN112831763B (zh) * 2020-12-25 2022-02-11 安徽立光电子材料股份有限公司 一种靶材再生处理及粘靶方法

Also Published As

Publication number Publication date
JP2009057598A (ja) 2009-03-19
JP5228245B2 (ja) 2013-07-03
CN101578387B (zh) 2011-06-08
TWI383060B (zh) 2013-01-21
KR20090085675A (ko) 2009-08-07
KR101110801B1 (ko) 2012-03-15
CN101578387A (zh) 2009-11-11
TW200925306A (en) 2009-06-16

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