JP2013038180A - GaN系化合物半導体装置 - Google Patents
GaN系化合物半導体装置 Download PDFInfo
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 20
- 150000001875 compounds Chemical class 0.000 title claims abstract description 14
- 229910052751 metal Inorganic materials 0.000 claims abstract description 38
- 239000002184 metal Substances 0.000 claims abstract description 38
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims abstract 4
- 239000007769 metal material Substances 0.000 abstract description 12
- 239000010410 layer Substances 0.000 description 96
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 52
- 230000001681 protective effect Effects 0.000 description 36
- 229910002704 AlGaN Inorganic materials 0.000 description 34
- 230000004888 barrier function Effects 0.000 description 30
- 239000010936 titanium Substances 0.000 description 17
- 229910052581 Si3N4 Inorganic materials 0.000 description 14
- 238000000034 method Methods 0.000 description 14
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 14
- 230000000052 comparative effect Effects 0.000 description 12
- 229920002120 photoresistant polymer Polymers 0.000 description 10
- 238000010438 heat treatment Methods 0.000 description 9
- 238000009792 diffusion process Methods 0.000 description 8
- 238000005546 reactive sputtering Methods 0.000 description 8
- 239000000758 substrate Substances 0.000 description 8
- 229910004298 SiO 2 Inorganic materials 0.000 description 7
- 229910052710 silicon Inorganic materials 0.000 description 7
- 229910052782 aluminium Inorganic materials 0.000 description 6
- 238000004519 manufacturing process Methods 0.000 description 6
- 238000004544 sputter deposition Methods 0.000 description 6
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 5
- 239000010703 silicon Substances 0.000 description 5
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 4
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 3
- 238000000137 annealing Methods 0.000 description 3
- 230000005669 field effect Effects 0.000 description 3
- 229910052721 tungsten Inorganic materials 0.000 description 3
- 239000010937 tungsten Substances 0.000 description 3
- -1 tungsten nitride Chemical class 0.000 description 3
- 230000005533 two-dimensional electron gas Effects 0.000 description 3
- 229910016570 AlCu Inorganic materials 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000007789 gas Substances 0.000 description 2
- 150000004767 nitrides Chemical class 0.000 description 2
- 229910052757 nitrogen Inorganic materials 0.000 description 2
- 239000012299 nitrogen atmosphere Substances 0.000 description 2
- 238000000206 photolithography Methods 0.000 description 2
- 230000002265 prevention Effects 0.000 description 2
- 238000012545 processing Methods 0.000 description 2
- 239000002356 single layer Substances 0.000 description 2
- 229910052719 titanium Inorganic materials 0.000 description 2
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 229910003070 TaOx Inorganic materials 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 239000010432 diamond Substances 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 125000005842 heteroatom Chemical group 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 239000011241 protective layer Substances 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
- H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
- H01L21/8252—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using III-V technology
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- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
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- H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
- H01L27/0605—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits made of compound material, e.g. AIIIBV
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- H01L29/66409—Unipolar field-effect transistors
- H01L29/66446—Unipolar field-effect transistors with an active layer made of a group 13/15 material, e.g. group 13/15 velocity modulation transistor [VMT], group 13/15 negative resistance FET [NERFET]
- H01L29/66462—Unipolar field-effect transistors with an active layer made of a group 13/15 material, e.g. group 13/15 velocity modulation transistor [VMT], group 13/15 negative resistance FET [NERFET] with a heterojunction interface channel or gate, e.g. HFET, HIGFET, SISFET, HJFET, HEMT
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- H01L29/778—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface
- H01L29/7786—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface with direct single heterostructure, i.e. with wide bandgap layer formed on top of active layer, e.g. direct single heterostructure MIS-like HEMT
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Abstract
【解決手段】このGaN系HFETによれば、ゲート電極をなすTiN膜の抵抗率(Ω・μm)を24.7(Ω・μm)とした。このように、ゲート電極のショットキー電極層としてのTiN膜の抵抗率が10Ωμm以上であることによって、ゲート電極をなす金属材料TiNの抵抗率(ゲートメタル抵抗率)が10Ωμm未満である場合に比べて、ゲートリーク電流を著しく低減できる。
【選択図】図8
Description
上記GaN系積層体上に形成されると共に互いに間隔をおいて配置されたソース電極およびドレイン電極と、
上記GaN系積層体上に形成されると共に上記ソース電極と上記ドレイン電極との間に配置されたゲート電極と
を備え、
上記ゲート電極は、
上記GaN系積層体に対してショットキー接合する共にTiNまたはWNで作製されている電極金属層を有するか、もしくは上記電極金属層からなり、
上記電極金属層は、抵抗率が10Ωμm以上であることを特徴としている。
図1〜図5は、この発明の第1実施形態であるGaN系HFET(ヘテロ接合電界効果トランジスタ)を製造する工程を順に示す断面図である。
次に、図9〜図13は、この発明の第2実施形態であるGaN系HFETの製造方法の工程を順に示す断面図である。
2,72 アンドープAlGaNバッファ層
3,73 アンドープGaNチャネル層
4,74 AlGaNバリア層
5,75 GaN系積層体
6,76 2次元電子ガス
7,77 SiN保護膜
12,13 リセス
15,85 Ti/Al/TiN電極(ソース電極)
16,86 Ti/Al/TiN電極(ドレイン電極)
18,88 ゲート電極
20,90 開口
50 保護膜
51 下層SiN膜
52 上層SiN膜
53 SiO2膜
ヘテロ接合を有するGaN系積層体と、
上記GaN系積層体上に形成されると共に互いに間隔をおいて配置されたソース電極およびドレイン電極と、
上記GaN系積層体上に形成されると共に上記ソース電極と上記ドレイン電極との間に配置されたゲート電極と
を備え、
上記GaN系積層体は、
GaNチャネル層と、
上記GaNチャネル層上に形成されたAlGaNバリア層と
を有し、
上記ゲート電極は、
上記GaN系積層体の上記AlGaNバリア層上に対してショットキー接合する共にTiNまたはWNで作製された電極金属層を有するか、もしくは上記電極金属層からなり、
上記電極金属層は、抵抗率が10Ωμm以上であることを特徴としている。
Claims (1)
- ヘテロ接合を有するGaN系積層体と、
上記GaN系積層体上に形成されると共に互いに間隔をおいて配置されたソース電極およびドレイン電極と、
上記GaN系積層体上に形成されると共に上記ソース電極と上記ドレイン電極との間に配置されたゲート電極と
を備え、
上記ゲート電極は、
上記GaN系積層体に対してショットキー接合する共にTiNまたはWNで作製された電極金属層を有するか、もしくは上記電極金属層からなり、
上記電極金属層は、抵抗率が10Ωμm以上であることを特徴とするGaN系化合物半導体装置。
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JP2011172055A JP5220904B2 (ja) | 2011-08-05 | 2011-08-05 | GaN系化合物半導体装置 |
PCT/JP2012/068837 WO2013021822A1 (ja) | 2011-08-05 | 2012-07-25 | GaN系化合物半導体装置 |
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JP2011172055A JP5220904B2 (ja) | 2011-08-05 | 2011-08-05 | GaN系化合物半導体装置 |
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Publication Number | Publication Date |
---|---|
JP2013038180A true JP2013038180A (ja) | 2013-02-21 |
JP5220904B2 JP5220904B2 (ja) | 2013-06-26 |
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WO (1) | WO2013021822A1 (ja) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2015070026A (ja) * | 2013-09-27 | 2015-04-13 | 豊田合成株式会社 | 半導体装置およびその製造方法 |
JPWO2014167876A1 (ja) * | 2013-04-12 | 2017-02-16 | シャープ株式会社 | 窒化物半導体装置 |
WO2020158394A1 (ja) * | 2019-02-01 | 2020-08-06 | ローム株式会社 | 窒化物半導体装置 |
Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS63202951A (ja) * | 1987-02-19 | 1988-08-22 | Toshiba Corp | 化合物半導体装置 |
JPS6459871A (en) * | 1987-08-31 | 1989-03-07 | Toshiba Corp | Field-effect transistor |
JPH04177764A (ja) * | 1990-11-13 | 1992-06-24 | Nikko Kyodo Co Ltd | ショットキ―電極の形成方法 |
JPH08116057A (ja) * | 1994-08-18 | 1996-05-07 | Samsung Electron Co Ltd | 半導体装置のTiNゲート電極の製造方法 |
JP2006196764A (ja) * | 2005-01-14 | 2006-07-27 | Fujitsu Ltd | 化合物半導体装置 |
JP2006253559A (ja) * | 2005-03-14 | 2006-09-21 | Nichia Chem Ind Ltd | 電界効果トランジスタ及びその製造方法 |
JP2010186943A (ja) * | 2009-02-13 | 2010-08-26 | Sharp Corp | 窒化物半導体装置 |
-
2011
- 2011-08-05 JP JP2011172055A patent/JP5220904B2/ja active Active
-
2012
- 2012-07-25 WO PCT/JP2012/068837 patent/WO2013021822A1/ja active Application Filing
Patent Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS63202951A (ja) * | 1987-02-19 | 1988-08-22 | Toshiba Corp | 化合物半導体装置 |
JPS6459871A (en) * | 1987-08-31 | 1989-03-07 | Toshiba Corp | Field-effect transistor |
JPH04177764A (ja) * | 1990-11-13 | 1992-06-24 | Nikko Kyodo Co Ltd | ショットキ―電極の形成方法 |
JPH08116057A (ja) * | 1994-08-18 | 1996-05-07 | Samsung Electron Co Ltd | 半導体装置のTiNゲート電極の製造方法 |
JP2006196764A (ja) * | 2005-01-14 | 2006-07-27 | Fujitsu Ltd | 化合物半導体装置 |
JP2006253559A (ja) * | 2005-03-14 | 2006-09-21 | Nichia Chem Ind Ltd | 電界効果トランジスタ及びその製造方法 |
JP2010186943A (ja) * | 2009-02-13 | 2010-08-26 | Sharp Corp | 窒化物半導体装置 |
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPWO2014167876A1 (ja) * | 2013-04-12 | 2017-02-16 | シャープ株式会社 | 窒化物半導体装置 |
JP2015070026A (ja) * | 2013-09-27 | 2015-04-13 | 豊田合成株式会社 | 半導体装置およびその製造方法 |
WO2020158394A1 (ja) * | 2019-02-01 | 2020-08-06 | ローム株式会社 | 窒化物半導体装置 |
JPWO2020158394A1 (ja) * | 2019-02-01 | 2021-12-02 | ローム株式会社 | 窒化物半導体装置 |
JP7369725B2 (ja) | 2019-02-01 | 2023-10-26 | ローム株式会社 | 窒化物半導体装置 |
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WO2013021822A1 (ja) | 2013-02-14 |
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