JP2013033843A - 回路基板、回路基板の製造方法、表示装置および電子機器 - Google Patents

回路基板、回路基板の製造方法、表示装置および電子機器 Download PDF

Info

Publication number
JP2013033843A
JP2013033843A JP2011168967A JP2011168967A JP2013033843A JP 2013033843 A JP2013033843 A JP 2013033843A JP 2011168967 A JP2011168967 A JP 2011168967A JP 2011168967 A JP2011168967 A JP 2011168967A JP 2013033843 A JP2013033843 A JP 2013033843A
Authority
JP
Japan
Prior art keywords
wiring layer
insulating film
circuit board
opening
layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
JP2011168967A
Other languages
English (en)
Japanese (ja)
Other versions
JP2013033843A5 (enExample
Inventor
Iwao Yagi
巖 八木
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sony Corp
Original Assignee
Sony Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sony Corp filed Critical Sony Corp
Priority to JP2011168967A priority Critical patent/JP2013033843A/ja
Priority to US13/556,955 priority patent/US8629444B2/en
Priority to CN2012102629447A priority patent/CN102916130A/zh
Publication of JP2013033843A publication Critical patent/JP2013033843A/ja
Publication of JP2013033843A5 publication Critical patent/JP2013033843A5/ja
Abandoned legal-status Critical Current

Links

Images

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K19/00Integrated devices, or assemblies of multiple devices, comprising at least one organic element specially adapted for rectifying, amplifying, oscillating or switching, covered by group H10K10/00
    • H10K19/80Interconnections, e.g. terminals
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K19/00Integrated devices, or assemblies of multiple devices, comprising at least one organic element specially adapted for rectifying, amplifying, oscillating or switching, covered by group H10K10/00

Landscapes

  • Thin Film Transistor (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Electroluminescent Light Sources (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)
JP2011168967A 2011-08-02 2011-08-02 回路基板、回路基板の製造方法、表示装置および電子機器 Abandoned JP2013033843A (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2011168967A JP2013033843A (ja) 2011-08-02 2011-08-02 回路基板、回路基板の製造方法、表示装置および電子機器
US13/556,955 US8629444B2 (en) 2011-08-02 2012-07-24 Circuit board, method of manufacturing circuit board, display, and electronic unit
CN2012102629447A CN102916130A (zh) 2011-08-02 2012-07-26 电路板、制造电路板的方法、显示器和电子单元

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2011168967A JP2013033843A (ja) 2011-08-02 2011-08-02 回路基板、回路基板の製造方法、表示装置および電子機器

Publications (2)

Publication Number Publication Date
JP2013033843A true JP2013033843A (ja) 2013-02-14
JP2013033843A5 JP2013033843A5 (enExample) 2014-09-04

Family

ID=47614430

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2011168967A Abandoned JP2013033843A (ja) 2011-08-02 2011-08-02 回路基板、回路基板の製造方法、表示装置および電子機器

Country Status (3)

Country Link
US (1) US8629444B2 (enExample)
JP (1) JP2013033843A (enExample)
CN (1) CN102916130A (enExample)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2015092579A1 (en) * 2013-12-18 2015-06-25 Koninklijke Philips N.V. Reflective solder mask layer for led phosphor package
US10211378B2 (en) * 2016-01-29 2019-02-19 Nichia Corporation Light emitting device and method for manufacturing same
JP2018005003A (ja) * 2016-07-04 2018-01-11 株式会社ジャパンディスプレイ 表示装置及び表示装置の製造方法

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7314784B2 (en) * 2003-03-19 2008-01-01 Semiconductor Energy Laboratory Co., Ltd. Thin film transistor and manufacturing method thereof
JP2007079359A (ja) * 2005-09-16 2007-03-29 Ricoh Co Ltd 画像表示装置。
KR101346246B1 (ko) * 2006-08-24 2013-12-31 가부시키가이샤 한도오따이 에네루기 켄큐쇼 표시장치 제작방법
JP5352967B2 (ja) 2006-11-17 2013-11-27 株式会社リコー 多層配線構造の製造方法及び多層配線構造
JP5008448B2 (ja) * 2007-04-20 2012-08-22 キヤノン株式会社 インクジェット記録ヘッド用の基板の製造方法
JP2011014724A (ja) 2009-07-02 2011-01-20 Seiko Epson Corp 半導体装置、半導体装置の製造方法、電子機器および電子機器の製造方法
CN101965097B (zh) * 2009-07-23 2012-07-25 揖斐电株式会社 印刷线路板及其制造方法
US8299467B2 (en) * 2009-12-28 2012-10-30 Semiconductor Energy Laboratory Co., Ltd. Thin film transistor and fabrication method thereof

Also Published As

Publication number Publication date
CN102916130A (zh) 2013-02-06
US20130032807A1 (en) 2013-02-07
US8629444B2 (en) 2014-01-14

Similar Documents

Publication Publication Date Title
CN101867017B (zh) 薄膜晶体管和用于制造薄膜晶体管的方法
JP4844767B2 (ja) 薄膜トランジスタ、薄膜トランジスタの製造方法、および電子機器
JP2013105950A (ja) 半導体装置および電子機器
JP6035734B2 (ja) 半導体素子、表示装置および電子機器
CN101644869A (zh) 电路基板、电光装置及电子设备
TWI556452B (zh) 半導體元件、顯示單元及電子裝置
JP2013084845A (ja) 有機薄膜トランジスタ、有機薄膜トランジスタの製造方法および表示装置
KR20110129815A (ko) 박막 트랜지스터 및 그 제조 방법, 및 전자 기기
CN102280582A (zh) 显示装置的制造方法
CN103489823A (zh) 多层膜基板及其制造方法
JP5655421B2 (ja) 半導体装置、表示装置、および電子機器
JP2010258118A (ja) 半導体装置、半導体装置の製造方法、表示装置、および電子機器
JP2011082419A (ja) 薄膜トランジスタ、薄膜トランジスタの製造方法、表示装置、および電子機器
KR20070118018A (ko) 반도체 장치, 전기 광학 장치, 전자기기 및 반도체 장치의제조 방법
JP2013033843A (ja) 回路基板、回路基板の製造方法、表示装置および電子機器
CN103137866B (zh) 晶体管、晶体管的制造方法、显示装置和电子设备
JP5447996B2 (ja) 薄膜トランジスタ、薄膜トランジスタの製造方法、および電子機器
JP2012038924A (ja) 半導体装置、表示装置、および電子機器
US9401486B2 (en) Driving circuit board, method of manufacturing the same, display unit, and electronic apparatus
JP2010135584A (ja) 薄膜トランジスタ、薄膜トランジスタの製造方法、表示装置、および電子機器
JP2007281188A (ja) トランジスタ、画素電極基板、電気光学装置、電子機器及び半導体素子の製造方法
WO2016208414A1 (ja) 素子基板および素子基板の製造方法ならびに表示装置
US20140070193A1 (en) Transistor, method of manufacturing transistor, method of manufacturing semiconductor unit, and method of manufacturing display unit
WO2016052127A1 (ja) 薄膜トランジスタ、薄膜トランジスタの製造方法および表示装置
JP2012059757A (ja) 半導体装置の製造方法、半導体装置、表示装置、および電子機器

Legal Events

Date Code Title Description
A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20140718

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20140718

A762 Written abandonment of application

Free format text: JAPANESE INTERMEDIATE CODE: A762

Effective date: 20150407