JP2013032274A - 多結晶シリコン破砕物の清浄化方法 - Google Patents
多結晶シリコン破砕物の清浄化方法 Download PDFInfo
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- JP2013032274A JP2013032274A JP2012168427A JP2012168427A JP2013032274A JP 2013032274 A JP2013032274 A JP 2013032274A JP 2012168427 A JP2012168427 A JP 2012168427A JP 2012168427 A JP2012168427 A JP 2012168427A JP 2013032274 A JP2013032274 A JP 2013032274A
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- 238000004140 cleaning Methods 0.000 title claims abstract description 85
- 238000000034 method Methods 0.000 title claims abstract description 42
- 229910021420 polycrystalline silicon Inorganic materials 0.000 title claims abstract description 39
- 239000002253 acid Substances 0.000 claims abstract description 75
- 230000002378 acidificating effect Effects 0.000 claims abstract description 8
- 238000003860 storage Methods 0.000 claims abstract description 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical group [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 22
- 229920005591 polysilicon Polymers 0.000 claims description 21
- 229910052710 silicon Inorganic materials 0.000 claims description 13
- 239000010703 silicon Substances 0.000 claims description 13
- 239000000463 material Substances 0.000 claims description 9
- 150000007513 acids Chemical class 0.000 claims description 6
- 229910021419 crystalline silicon Inorganic materials 0.000 claims 1
- 230000008569 process Effects 0.000 abstract description 16
- 238000005259 measurement Methods 0.000 abstract description 11
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 28
- QPJSUIGXIBEQAC-UHFFFAOYSA-N n-(2,4-dichloro-5-propan-2-yloxyphenyl)acetamide Chemical compound CC(C)OC1=CC(NC(C)=O)=C(Cl)C=C1Cl QPJSUIGXIBEQAC-UHFFFAOYSA-N 0.000 description 22
- 239000000203 mixture Substances 0.000 description 13
- 239000000126 substance Substances 0.000 description 9
- 238000004448 titration Methods 0.000 description 5
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 4
- 239000002184 metal Substances 0.000 description 4
- 239000013078 crystal Substances 0.000 description 3
- 238000005530 etching Methods 0.000 description 3
- 239000012634 fragment Substances 0.000 description 3
- GPRLSGONYQIRFK-UHFFFAOYSA-N hydron Chemical compound [H+] GPRLSGONYQIRFK-UHFFFAOYSA-N 0.000 description 3
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 description 2
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 2
- 238000004458 analytical method Methods 0.000 description 2
- 230000003139 buffering effect Effects 0.000 description 2
- 239000012459 cleaning agent Substances 0.000 description 2
- 230000007812 deficiency Effects 0.000 description 2
- 229910017604 nitric acid Inorganic materials 0.000 description 2
- 239000002994 raw material Substances 0.000 description 2
- 235000012431 wafers Nutrition 0.000 description 2
- KRHYYFGTRYWZRS-UHFFFAOYSA-M Fluoride anion Chemical compound [F-] KRHYYFGTRYWZRS-UHFFFAOYSA-M 0.000 description 1
- 229910002651 NO3 Inorganic materials 0.000 description 1
- NHNBFGGVMKEFGY-UHFFFAOYSA-N Nitrate Chemical compound [O-][N+]([O-])=O NHNBFGGVMKEFGY-UHFFFAOYSA-N 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 230000001934 delay Effects 0.000 description 1
- 229910003460 diamond Inorganic materials 0.000 description 1
- 239000010432 diamond Substances 0.000 description 1
- 238000004090 dissolution Methods 0.000 description 1
- 238000004821 distillation Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000011049 filling Methods 0.000 description 1
- IXCSERBJSXMMFS-UHFFFAOYSA-N hcl hcl Chemical compound Cl.Cl IXCSERBJSXMMFS-UHFFFAOYSA-N 0.000 description 1
- -1 hexafluorosilicic acid Chemical compound 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 150000002484 inorganic compounds Chemical class 0.000 description 1
- 229910010272 inorganic material Inorganic materials 0.000 description 1
- 238000011835 investigation Methods 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 238000000691 measurement method Methods 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 239000002923 metal particle Substances 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 150000002894 organic compounds Chemical class 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- 238000004806 packaging method and process Methods 0.000 description 1
- 238000003918 potentiometric titration Methods 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 150000003377 silicon compounds Chemical class 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- 238000005979 thermal decomposition reaction Methods 0.000 description 1
- ZDHXKXAHOVTTAH-UHFFFAOYSA-N trichlorosilane Chemical compound Cl[SiH](Cl)Cl ZDHXKXAHOVTTAH-UHFFFAOYSA-N 0.000 description 1
- 239000005052 trichlorosilane Substances 0.000 description 1
- 238000005406 washing Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
- 238000005303 weighing Methods 0.000 description 1
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- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B33/00—Silicon; Compounds thereof
- C01B33/02—Silicon
- C01B33/037—Purification
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B3/00—Cleaning by methods involving the use or presence of liquid or steam
- B08B3/04—Cleaning involving contact with liquid
- B08B3/08—Cleaning involving contact with liquid the liquid having chemical or dissolving effect
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/02—Elements
- C30B29/06—Silicon
-
- G—PHYSICS
- G05—CONTROLLING; REGULATING
- G05D—SYSTEMS FOR CONTROLLING OR REGULATING NON-ELECTRIC VARIABLES
- G05D9/00—Level control, e.g. controlling quantity of material stored in vessel
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
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- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Engineering & Computer Science (AREA)
- Inorganic Chemistry (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Materials Engineering (AREA)
- Crystallography & Structural Chemistry (AREA)
- Metallurgy (AREA)
- Automation & Control Theory (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Manufacturing & Machinery (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Silicon Compounds (AREA)
- Cleaning By Liquid Or Steam (AREA)
- Cleaning Or Drying Semiconductors (AREA)
Abstract
【解決手段】清浄化が複数の清浄化サイクルを有し、各清浄化サイクルで所定量の酸が消費され、計算機制御された計量供給システムのインテグレータを用いて、各清浄化サイクルにおいて消費されたそれぞれの酸量を合計して清浄化浴中の酸の現在の全消費量とし、清浄化浴中で、この計量供給システムの最適な計量供給量に一致する酸の全消費量に達した後に、この計量供給システムが、貯蔵容器から取り出した新たな酸の最適な計量供給量を清浄化浴に供給する、酸性の清浄化浴中での多結晶シリコン破砕物の清浄化方法
【選択図】なし
Description
・ 破砕粒サイズ1(BG1)(mmで表す):約3〜15;
・ 破砕粒サイズ2(BG2)(mmで表す):約10〜40;
・ 破砕粒サイズ3(BG3)(mmで表す):約20〜60;
・ 破砕粒サイズ4(BG4)(mmで表す):約40〜110;
・ 破砕粒サイズ5(BG5)(mmで表す):約110〜170;
・ 破砕粒サイズ6(BG6)(mmで表す):約150〜230。
・ BG6:約0.05cm2/g;
・ BG5:約0.5cm2/g;
・ BG4:約1cm2/g;
・ BG3:約2cm2/g;
・ BG2:約5cm2/g;
・ BG1:約10cm2/g。
HF 10L又はHNO3 10Lの最小量が達成されて初めて、圧縮空気ダイアフラムポンプが後供給する。
多様な破砕粒サイズを本発明により清浄化した。まず、破砕粒サイズ6のポリシリコンを清浄化し、次いで破砕物サイズ5等を清浄化した。
Claims (8)
- 酸性の清浄化浴中で多結晶シリコン破砕物を清浄化する方法において、前記清浄化は複数の清浄化サイクルを有し、各清浄化サイクルにおいて所定量の酸が消費され、計算機制御された計量供給システムのインテグレータを用いて、各清浄化サイクルにおいて消費されたそれぞれの酸量を合計して、前記清浄化浴中の酸の現在の全消費量とし、前記清浄化浴中で、前記計量供給システムの最適な計量供給量に一致する酸の全消費量に達した後に、前記計量供給システムが、貯蔵容器から取り出した新たな酸の最適な計量供給量を前記清浄化浴に供給する、多結晶シリコン破砕物を清浄化する方法。
- 前記計量供給システムが、計量供給ポンプ又は計量供給秤を含む、請求項1記載の方法。
- 前記清浄化浴が、HF、HCl、H2O2及びHNO3からなる群から選択される1種以上の酸を含む、請求項1又は2記載の方法。
- 1清浄化サイクル当たりの酸の消費量が、計算機制御された計量供給システム中で装置パラメータとして記憶されている、請求項1から3までのいずれか1項記載の方法。
- 前記シリコン破砕物の異なるサイズクラスを清浄化し、それぞれのサイズクラスに対して1清浄化サイクル当たりの酸の消費量が、計算機制御された計量供給システム中で装置パラメータとして記憶されている、請求項4記載の方法。
- 前記清浄化浴は少なくとも2種の酸を有し、それぞれの酸について、別個の計算機制御された計量供給システムが、前記清浄化浴に新たな酸を供給することを予定している、請求項1から5までのいずれか1項記載の方法。
- 前記清浄化浴中で循環されたリットルで表される酸量の、前記清浄化浴中に存在するkgで表されるポリシリコン破砕物の質量に対する比の値が10より大きいことを特徴とする、請求項1から6までのいずれか1項記載の方法。
- 酸を循環させる酸循環路を含む酸性の清浄化浴中で、多結晶シリコン破砕物を清浄化する方法において、リットルで表される循環された酸量の、前記清浄化浴中に存在するkgで表されるポリシリコン破砕物の質量に対する比の値が10より大きいことを特徴とする、多結晶シリコン破砕物を清浄化する方法。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE102011080105.7 | 2011-07-29 | ||
DE102011080105A DE102011080105A1 (de) | 2011-07-29 | 2011-07-29 | Verfahren zur Reinigung von polykristallinen Siliciumbruchstücken |
Publications (2)
Publication Number | Publication Date |
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JP2013032274A true JP2013032274A (ja) | 2013-02-14 |
JP5680592B2 JP5680592B2 (ja) | 2015-03-04 |
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JP2012168427A Active JP5680592B2 (ja) | 2011-07-29 | 2012-07-30 | 多結晶シリコン破砕物の清浄化方法 |
Country Status (8)
Country | Link |
---|---|
US (1) | US9120674B2 (ja) |
EP (1) | EP2562137B1 (ja) |
JP (1) | JP5680592B2 (ja) |
KR (1) | KR101456747B1 (ja) |
CN (1) | CN102897767B (ja) |
CA (1) | CA2780401C (ja) |
DE (1) | DE102011080105A1 (ja) |
ES (1) | ES2587613T3 (ja) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2015186318A1 (ja) * | 2014-06-03 | 2015-12-10 | 信越化学工業株式会社 | 多結晶シリコンロッドの製造方法、多結晶シリコンロッド、および、多結晶シリコン塊 |
JP2018521908A (ja) * | 2015-05-26 | 2018-08-09 | ワッカー ケミー アクチエンゲゼルシャフトWacker Chemie AG | ポリシリコンの包装 |
Families Citing this family (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
ES2526268B1 (es) * | 2013-06-03 | 2015-10-20 | Manuel BORREGO CASTRO | Procedimiento de limpieza de vasos de disolución y posterior dosificación de medio de disolución y equipo modular móvil de limpieza y dosificación para su puesta en práctica |
WO2015013489A1 (en) * | 2013-07-24 | 2015-01-29 | Alpha Consolidated Holdings Inc. | Bottle with expansion chamber and pinch grips |
DE102013223883A1 (de) * | 2013-11-22 | 2015-05-28 | Wacker Chemie Ag | Verfahren zur Herstellung von polykristallinem Silicium |
EP3617144A4 (en) * | 2017-04-24 | 2021-02-17 | Tokuyama Corporation | PROCESS FOR MANUFACTURING POLYCRYSTALLINE SILICON FRAGMENT AND PROCESS FOR MANAGING THE SURFACE METAL CONCENTRATION OF POLYCRYSTALLINE SILICON FRAGMENT |
KR20240034859A (ko) * | 2020-08-27 | 2024-03-14 | 가부시키가이샤 도쿠야마 | 다결정 실리콘 파쇄괴 |
CN112768553B (zh) * | 2020-12-30 | 2023-05-02 | 横店集团东磁股份有限公司 | 一种丝网印刷返工片的清洗方法 |
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JPH11168076A (ja) * | 1997-09-19 | 1999-06-22 | Wacker Chemie Gmbh | 多結晶シリコン |
JP2000302594A (ja) * | 1999-02-18 | 2000-10-31 | Mitsubishi Materials Polycrystalline Silicon Corp | 多結晶シリコンの洗浄方法 |
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US3964956A (en) * | 1974-10-24 | 1976-06-22 | General Dynamics Corporation | System for maintaining uniform copper etching efficiency |
US5175502A (en) | 1990-09-14 | 1992-12-29 | Armco Steel Company, L.P. | Method and apparatus for determining acid concentration |
US5439569A (en) | 1993-02-12 | 1995-08-08 | Sematech, Inc. | Concentration measurement and control of hydrogen peroxide and acid/base component in a semiconductor bath |
DE4325543A1 (de) | 1993-07-29 | 1995-02-02 | Wacker Chemitronic | Verfahren und Vorrichtung zur naßchemischen Behandlung von Siliciummaterial |
EP1101243A1 (de) | 1998-03-02 | 2001-05-23 | Mostafa Sabet | Verfahren zum wechseln eines in einem behandlungsbecken enthaltenen behandlungsmediums und anlage zur ausführung des verfahrens |
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2011
- 2011-07-29 DE DE102011080105A patent/DE102011080105A1/de not_active Withdrawn
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2012
- 2012-06-20 CA CA2780401A patent/CA2780401C/en not_active Expired - Fee Related
- 2012-07-11 US US13/546,356 patent/US9120674B2/en active Active
- 2012-07-18 ES ES12176804.8T patent/ES2587613T3/es active Active
- 2012-07-18 EP EP12176804.8A patent/EP2562137B1/de active Active
- 2012-07-27 KR KR1020120082818A patent/KR101456747B1/ko active IP Right Grant
- 2012-07-27 CN CN201210265557.9A patent/CN102897767B/zh active Active
- 2012-07-30 JP JP2012168427A patent/JP5680592B2/ja active Active
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JPH11168076A (ja) * | 1997-09-19 | 1999-06-22 | Wacker Chemie Gmbh | 多結晶シリコン |
JP2000302594A (ja) * | 1999-02-18 | 2000-10-31 | Mitsubishi Materials Polycrystalline Silicon Corp | 多結晶シリコンの洗浄方法 |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2015186318A1 (ja) * | 2014-06-03 | 2015-12-10 | 信越化学工業株式会社 | 多結晶シリコンロッドの製造方法、多結晶シリコンロッド、および、多結晶シリコン塊 |
JP2015229604A (ja) * | 2014-06-03 | 2015-12-21 | 信越化学工業株式会社 | 多結晶シリコンロッドの製造方法、多結晶シリコンロッド、および、多結晶シリコン塊 |
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JP2018521908A (ja) * | 2015-05-26 | 2018-08-09 | ワッカー ケミー アクチエンゲゼルシャフトWacker Chemie AG | ポリシリコンの包装 |
Also Published As
Publication number | Publication date |
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CN102897767B (zh) | 2014-07-30 |
KR20130014436A (ko) | 2013-02-07 |
CN102897767A (zh) | 2013-01-30 |
DE102011080105A8 (de) | 2013-04-25 |
DE102011080105A1 (de) | 2013-01-31 |
EP2562137B1 (de) | 2016-05-25 |
KR101456747B1 (ko) | 2014-10-31 |
EP2562137A1 (de) | 2013-02-27 |
US20130025625A1 (en) | 2013-01-31 |
ES2587613T3 (es) | 2016-10-25 |
US9120674B2 (en) | 2015-09-01 |
CA2780401A1 (en) | 2013-01-29 |
JP5680592B2 (ja) | 2015-03-04 |
CA2780401C (en) | 2014-10-07 |
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