JP2013026248A - 半導体装置の製造方法 - Google Patents
半導体装置の製造方法 Download PDFInfo
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 59
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 43
- 239000010410 layer Substances 0.000 claims abstract description 112
- 229910052751 metal Inorganic materials 0.000 claims abstract description 42
- 239000002184 metal Substances 0.000 claims abstract description 42
- 239000011229 interlayer Substances 0.000 claims abstract description 33
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 22
- 229910052782 aluminium Inorganic materials 0.000 claims abstract description 16
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims abstract description 12
- 238000005275 alloying Methods 0.000 claims abstract description 11
- 235000012239 silicon dioxide Nutrition 0.000 claims abstract description 11
- 239000000377 silicon dioxide Substances 0.000 claims abstract description 11
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims description 25
- 229910010271 silicon carbide Inorganic materials 0.000 claims description 25
- 238000000034 method Methods 0.000 claims description 20
- 239000010936 titanium Substances 0.000 claims description 15
- 238000001312 dry etching Methods 0.000 claims description 12
- 229910052710 silicon Inorganic materials 0.000 claims description 9
- 229910052719 titanium Inorganic materials 0.000 claims description 8
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 7
- 239000010703 silicon Substances 0.000 claims description 7
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 4
- 239000002344 surface layer Substances 0.000 claims description 3
- 210000000746 body region Anatomy 0.000 description 21
- 239000000758 substrate Substances 0.000 description 19
- 238000010438 heat treatment Methods 0.000 description 18
- 239000012535 impurity Substances 0.000 description 14
- 239000007789 gas Substances 0.000 description 11
- MWUXSHHQAYIFBG-UHFFFAOYSA-N Nitric oxide Chemical compound O=[N] MWUXSHHQAYIFBG-UHFFFAOYSA-N 0.000 description 10
- 230000015572 biosynthetic process Effects 0.000 description 6
- 238000005468 ion implantation Methods 0.000 description 6
- PXHVJJICTQNCMI-UHFFFAOYSA-N nickel Substances [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 5
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 4
- 229910004298 SiO 2 Inorganic materials 0.000 description 4
- 229910045601 alloy Inorganic materials 0.000 description 4
- 239000000956 alloy Substances 0.000 description 4
- 238000000137 annealing Methods 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 4
- 229920005591 polysilicon Polymers 0.000 description 4
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 3
- 239000004020 conductor Substances 0.000 description 3
- 239000011261 inert gas Substances 0.000 description 3
- 150000002500 ions Chemical class 0.000 description 3
- 229910002601 GaN Inorganic materials 0.000 description 2
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 2
- 229910052786 argon Inorganic materials 0.000 description 2
- 125000004433 nitrogen atom Chemical group N* 0.000 description 2
- 229910052698 phosphorus Inorganic materials 0.000 description 2
- 238000000206 photolithography Methods 0.000 description 2
- 238000007740 vapor deposition Methods 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 230000004913 activation Effects 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 229910001873 dinitrogen Inorganic materials 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 238000011049 filling Methods 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/0445—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising crystalline silicon carbide
- H01L21/048—Making electrodes
- H01L21/0485—Ohmic electrodes
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
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- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
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- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/417—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions carrying the current to be rectified, amplified or switched
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- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66053—Multistep manufacturing processes of devices having a semiconductor body comprising crystalline silicon carbide
- H01L29/66068—Multistep manufacturing processes of devices having a semiconductor body comprising crystalline silicon carbide the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
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- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
- H01L29/7802—Vertical DMOS transistors, i.e. VDMOS transistors
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- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
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- H01L29/16—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic Table
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- Crystallography & Structural Chemistry (AREA)
- Electrodes Of Semiconductors (AREA)
Abstract
【解決手段】MOSFET100の製造方法は、活性層7上にゲート酸化膜91を形成する工程と、ゲート酸化膜91上にゲート電極93を形成する工程と、活性層7に対してオーミック接触するソースコンタクト電極92を形成する工程と、ソースコンタクト電極92が形成された後、ゲート電極93を覆うように二酸化珪素からなる層間絶縁膜94を形成する工程とを備え、ソースコンタクト電極92を形成する工程は、活性層7に接触するようにアルミニウムを含む金属層を形成する工程と、金属層を合金化する工程とを含む。
【選択図】図1
Description
Claims (5)
- 半導体層上にゲート絶縁膜を形成する工程と、
前記ゲート絶縁膜上にゲート電極を形成する工程と、
前記半導体層に対してオーミック接触するオーミックコンタクト電極を形成する工程と、
前記オーミックコンタクト電極が形成された後、前記ゲート電極を覆うように二酸化珪素からなる層間絶縁膜を形成する工程とを備え、
前記オーミックコンタクト電極を形成する工程は、
前記半導体層に接触するようにアルミニウムを含む金属層を形成する工程と、
前記金属層を合金化する工程とを含む、半導体装置の製造方法。 - 前記オーミックコンタクト電極を形成する工程は、ドライエッチングにより前記金属層を加工する工程をさらに含む、請求項1に記載の半導体装置の製造方法。
- ドライエッチングにより前記金属層を加工する工程よりも前に、前記ゲート電極の表層部に酸化層を形成する工程をさらに備えた、請求項2に記載の半導体装置の製造方法。
- 前記半導体層は炭化珪素からなる、請求項1〜3のいずれか1項に記載の半導体装置の製造方法。
- 前記金属層はアルミニウムとチタンと珪素とを含有する、請求項4に記載の半導体装置の製造方法。
Priority Applications (7)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2011156228A JP5704003B2 (ja) | 2011-07-15 | 2011-07-15 | 半導体装置の製造方法 |
EP12814368.2A EP2733726A1 (en) | 2011-07-15 | 2012-06-19 | Method for manufacturing semiconductor device |
PCT/JP2012/065569 WO2013011787A1 (ja) | 2011-07-15 | 2012-06-19 | 半導体装置の製造方法 |
KR1020137029460A KR20140035899A (ko) | 2011-07-15 | 2012-06-19 | 반도체 장치의 제조 방법 |
CN201280028971.6A CN103608905A (zh) | 2011-07-15 | 2012-06-19 | 用于制造半导体器件的方法 |
TW101124095A TW201310546A (zh) | 2011-07-15 | 2012-07-04 | 半導體裝置之製造方法 |
US13/546,828 US8802552B2 (en) | 2011-07-15 | 2012-07-11 | Method for manufacturing semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2011156228A JP5704003B2 (ja) | 2011-07-15 | 2011-07-15 | 半導体装置の製造方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2013026248A true JP2013026248A (ja) | 2013-02-04 |
JP5704003B2 JP5704003B2 (ja) | 2015-04-22 |
Family
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Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2011156228A Expired - Fee Related JP5704003B2 (ja) | 2011-07-15 | 2011-07-15 | 半導体装置の製造方法 |
Country Status (7)
Country | Link |
---|---|
US (1) | US8802552B2 (ja) |
EP (1) | EP2733726A1 (ja) |
JP (1) | JP5704003B2 (ja) |
KR (1) | KR20140035899A (ja) |
CN (1) | CN103608905A (ja) |
TW (1) | TW201310546A (ja) |
WO (1) | WO2013011787A1 (ja) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2014174903A1 (ja) * | 2013-04-26 | 2014-10-30 | 住友電気工業株式会社 | 炭化珪素半導体装置の製造方法 |
WO2015001863A1 (ja) * | 2013-07-04 | 2015-01-08 | 住友電気工業株式会社 | 炭化珪素半導体装置の製造方法 |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP7283053B2 (ja) * | 2018-11-09 | 2023-05-30 | 富士電機株式会社 | 炭化珪素半導体装置、炭化珪素半導体組立体および炭化珪素半導体装置の製造方法 |
CN111129155A (zh) * | 2019-12-25 | 2020-05-08 | 重庆伟特森电子科技有限公司 | 一种低栅漏电容碳化硅di-mosfet制备方法 |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
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JPH0265138A (ja) * | 1988-08-30 | 1990-03-05 | Seiko Epson Corp | 薄膜トランジスタの製造方法 |
JPH07335873A (ja) * | 1994-06-09 | 1995-12-22 | Nippondenso Co Ltd | 半導体装置の製造方法 |
JP2004096067A (ja) * | 2002-07-09 | 2004-03-25 | Toshiba Corp | 半導体装置及びその製造方法 |
JP2008078434A (ja) * | 2006-09-22 | 2008-04-03 | Toyota Motor Corp | 半導体装置とその製造方法 |
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JP2509713B2 (ja) * | 1989-10-18 | 1996-06-26 | シャープ株式会社 | 炭化珪素半導体装置およびその製造方法 |
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JP3559971B2 (ja) * | 2001-12-11 | 2004-09-02 | 日産自動車株式会社 | 炭化珪素半導体装置およびその製造方法 |
US7880173B2 (en) * | 2002-06-28 | 2011-02-01 | National Institute Of Advanced Industrial Science And Technology | Semiconductor device and method of manufacturing same |
US7217954B2 (en) * | 2003-03-18 | 2007-05-15 | Matsushita Electric Industrial Co., Ltd. | Silicon carbide semiconductor device and method for fabricating the same |
JP4903439B2 (ja) * | 2005-05-31 | 2012-03-28 | 株式会社東芝 | 電界効果トランジスタ |
DE602007005822D1 (de) * | 2006-09-22 | 2010-05-20 | Univ Osaka | Herstellungsverfahren für halbleiterbauelemente |
US8076736B2 (en) * | 2007-02-14 | 2011-12-13 | Panasonic Corporation | Semiconductor device and method for manufacturing the same |
JP2008244456A (ja) * | 2007-02-28 | 2008-10-09 | Denso Corp | 炭化珪素半導体装置およびその製造方法 |
JP5286677B2 (ja) * | 2007-03-13 | 2013-09-11 | トヨタ自動車株式会社 | P型4H−SiC基板上のオーミック電極の形成方法 |
JP4793293B2 (ja) * | 2007-03-16 | 2011-10-12 | 日産自動車株式会社 | 炭化珪素半導体装置及びその製造方法 |
JP4291875B2 (ja) * | 2007-07-20 | 2009-07-08 | パナソニック株式会社 | 炭化珪素半導体装置およびその製造方法 |
WO2009054140A1 (ja) * | 2007-10-24 | 2009-04-30 | Panasonic Corporation | 半導体素子およびその製造方法 |
JP5477286B2 (ja) | 2008-04-15 | 2014-04-23 | 住友電気工業株式会社 | 半導体装置およびその製造方法 |
-
2011
- 2011-07-15 JP JP2011156228A patent/JP5704003B2/ja not_active Expired - Fee Related
-
2012
- 2012-06-19 KR KR1020137029460A patent/KR20140035899A/ko not_active Application Discontinuation
- 2012-06-19 EP EP12814368.2A patent/EP2733726A1/en not_active Withdrawn
- 2012-06-19 WO PCT/JP2012/065569 patent/WO2013011787A1/ja active Application Filing
- 2012-06-19 CN CN201280028971.6A patent/CN103608905A/zh active Pending
- 2012-07-04 TW TW101124095A patent/TW201310546A/zh unknown
- 2012-07-11 US US13/546,828 patent/US8802552B2/en not_active Expired - Fee Related
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
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JPH0265138A (ja) * | 1988-08-30 | 1990-03-05 | Seiko Epson Corp | 薄膜トランジスタの製造方法 |
JPH07335873A (ja) * | 1994-06-09 | 1995-12-22 | Nippondenso Co Ltd | 半導体装置の製造方法 |
JP2004096067A (ja) * | 2002-07-09 | 2004-03-25 | Toshiba Corp | 半導体装置及びその製造方法 |
JP2008078434A (ja) * | 2006-09-22 | 2008-04-03 | Toyota Motor Corp | 半導体装置とその製造方法 |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2014174903A1 (ja) * | 2013-04-26 | 2014-10-30 | 住友電気工業株式会社 | 炭化珪素半導体装置の製造方法 |
WO2015001863A1 (ja) * | 2013-07-04 | 2015-01-08 | 住友電気工業株式会社 | 炭化珪素半導体装置の製造方法 |
US9704743B2 (en) | 2013-07-04 | 2017-07-11 | Sumitomo Electric Industries, Ltd. | Method for manufacturing silicon carbide semiconductor device |
Also Published As
Publication number | Publication date |
---|---|
WO2013011787A1 (ja) | 2013-01-24 |
CN103608905A (zh) | 2014-02-26 |
EP2733726A1 (en) | 2014-05-21 |
JP5704003B2 (ja) | 2015-04-22 |
TW201310546A (zh) | 2013-03-01 |
US20130017677A1 (en) | 2013-01-17 |
US8802552B2 (en) | 2014-08-12 |
KR20140035899A (ko) | 2014-03-24 |
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