JP2013005446A5 - - Google Patents
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- JP2013005446A5 JP2013005446A5 JP2012135371A JP2012135371A JP2013005446A5 JP 2013005446 A5 JP2013005446 A5 JP 2013005446A5 JP 2012135371 A JP2012135371 A JP 2012135371A JP 2012135371 A JP2012135371 A JP 2012135371A JP 2013005446 A5 JP2013005446 A5 JP 2013005446A5
- Authority
- JP
- Japan
- Prior art keywords
- piezoelectric layer
- resonator structure
- baw resonator
- equal
- width
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
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- 230000001052 transient effect Effects 0.000 claims 1
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US13/161,946 US8330325B1 (en) | 2011-06-16 | 2011-06-16 | Bulk acoustic resonator comprising non-piezoelectric layer |
| US13/161,946 | 2011-06-16 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2013005446A JP2013005446A (ja) | 2013-01-07 |
| JP2013005446A5 true JP2013005446A5 (enExample) | 2015-07-16 |
Family
ID=47228671
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2012135371A Pending JP2013005446A (ja) | 2011-06-16 | 2012-06-15 | 非圧電層を備えたバルク音響共振器 |
Country Status (3)
| Country | Link |
|---|---|
| US (1) | US8330325B1 (enExample) |
| JP (1) | JP2013005446A (enExample) |
| DE (1) | DE102012210160B4 (enExample) |
Families Citing this family (45)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2010013197A2 (en) * | 2008-08-01 | 2010-02-04 | Ecole polytechnique fédérale de Lausanne (EPFL) | Piezoelectric resonator operating in thickness shear mode |
| US8962443B2 (en) | 2011-01-31 | 2015-02-24 | Avago Technologies General Ip (Singapore) Pte. Ltd. | Semiconductor device having an airbridge and method of fabricating the same |
| US9425764B2 (en) | 2012-10-25 | 2016-08-23 | Avago Technologies General Ip (Singapore) Pte. Ltd. | Accoustic resonator having composite electrodes with integrated lateral features |
| US9401692B2 (en) | 2012-10-29 | 2016-07-26 | Avago Technologies General Ip (Singapore) Pte. Ltd. | Acoustic resonator having collar structure |
| US9490771B2 (en) | 2012-10-29 | 2016-11-08 | Avago Technologies General Ip (Singapore) Pte. Ltd. | Acoustic resonator comprising collar and frame |
| US9484882B2 (en) | 2013-02-14 | 2016-11-01 | Avago Technologies General Ip (Singapore) Pte. Ltd. | Acoustic resonator having temperature compensation |
| US9590165B2 (en) | 2011-03-29 | 2017-03-07 | Avago Technologies General Ip (Singapore) Pte. Ltd. | Acoustic resonator comprising aluminum scandium nitride and temperature compensation feature |
| US9748918B2 (en) | 2013-02-14 | 2017-08-29 | Avago Technologies General Ip (Singapore) Pte. Ltd. | Acoustic resonator comprising integrated structures for improved performance |
| US9490418B2 (en) | 2011-03-29 | 2016-11-08 | Avago Technologies General Ip (Singapore) Pte. Ltd. | Acoustic resonator comprising collar and acoustic reflector with temperature compensating layer |
| US9444426B2 (en) | 2012-10-25 | 2016-09-13 | Avago Technologies General Ip (Singapore) Pte. Ltd. | Accoustic resonator having integrated lateral feature and temperature compensation feature |
| US9917567B2 (en) | 2011-05-20 | 2018-03-13 | Avago Technologies General Ip (Singapore) Pte. Ltd. | Bulk acoustic resonator comprising aluminum scandium nitride |
| US9154111B2 (en) * | 2011-05-20 | 2015-10-06 | Avago Technologies General Ip (Singapore) Pte. Ltd. | Double bulk acoustic resonator comprising aluminum scandium nitride |
| US9473106B2 (en) * | 2011-06-21 | 2016-10-18 | Georgia Tech Research Corporation | Thin-film bulk acoustic wave delay line |
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| US9525399B2 (en) * | 2011-10-31 | 2016-12-20 | Avago Technologies General Ip (Singapore) Pte. Ltd. | Planarized electrode for improved performance in bulk acoustic resonators |
| CN102904546B (zh) * | 2012-08-30 | 2016-04-13 | 中兴通讯股份有限公司 | 一种温度补偿能力可调节的压电声波谐振器 |
| JP6110182B2 (ja) * | 2013-03-29 | 2017-04-05 | 日本碍子株式会社 | 圧電/電歪素子 |
| JP6325799B2 (ja) * | 2013-11-11 | 2018-05-16 | 太陽誘電株式会社 | 圧電薄膜共振器、フィルタおよびデュプレクサ |
| US10804877B2 (en) * | 2014-01-21 | 2020-10-13 | Avago Technologies International Sales Pte. Limited | Film bulk acoustic wave resonator (FBAR) having stress-relief |
| US9853626B2 (en) | 2014-03-31 | 2017-12-26 | Avago Technologies General Ip (Singapore) Pte. Ltd. | Acoustic resonator comprising acoustic redistribution layers and lateral features |
| US9548438B2 (en) | 2014-03-31 | 2017-01-17 | Avago Technologies General Ip (Singapore) Pte. Ltd. | Acoustic resonator comprising acoustic redistribution layers |
| US9991872B2 (en) * | 2014-04-04 | 2018-06-05 | Qorvo Us, Inc. | MEMS resonator with functional layers |
| US9998088B2 (en) | 2014-05-02 | 2018-06-12 | Qorvo Us, Inc. | Enhanced MEMS vibrating device |
| US10340885B2 (en) | 2014-05-08 | 2019-07-02 | Avago Technologies International Sales Pte. Limited | Bulk acoustic wave devices with temperature-compensating niobium alloy electrodes |
| FR3047355B1 (fr) * | 2016-02-01 | 2019-04-19 | Soitec | Structure hybride pour dispositif a ondes acoustiques de surface |
| KR102703814B1 (ko) * | 2016-07-07 | 2024-09-04 | 삼성전기주식회사 | 음향 공진기 및 그 제조 방법 |
| US10720900B2 (en) * | 2016-07-07 | 2020-07-21 | Samsung Electro-Mechanics Co., Ltd. | Acoustic resonator and method |
| US10873316B2 (en) | 2017-03-02 | 2020-12-22 | Samsung Electro-Mechanics Co., Ltd. | Acoustic resonator and method of manufacturing the same |
| DE102018104712B4 (de) | 2018-03-01 | 2020-03-12 | RF360 Europe GmbH | Verfahren zum Ausbilden einer Aluminiumnitridschicht |
| US11095267B2 (en) * | 2018-03-28 | 2021-08-17 | Qorvo Us, Inc. | Coupled resonator filter with embedded border ring |
| US12155368B2 (en) * | 2018-07-20 | 2024-11-26 | Global Communication Semiconductors, Llc | Support structure for bulk acoustic wave resonator |
| US12463618B2 (en) * | 2018-11-27 | 2025-11-04 | Winchester Technologies, LLC | Magnetoelectric antenna arrays |
| US11509287B2 (en) | 2018-12-14 | 2022-11-22 | Qorvo Us, Inc. | Bi-polar border region in piezoelectric device |
| US11502667B2 (en) | 2019-01-14 | 2022-11-15 | Qorvo Us, Inc. | Top electrodes with step arrangements for bulk acoustic wave resonators |
| WO2021021748A1 (en) | 2019-07-31 | 2021-02-04 | QXONIX Inc. | Structures, acoustic wave resonators, devices and systems |
| US12451860B2 (en) | 2019-07-31 | 2025-10-21 | QXONIX Inc. | Structures, acoustic wave resonators, devices and systems |
| US12445109B2 (en) | 2019-07-31 | 2025-10-14 | QXONIX Inc. | Structures, acoustic wave resonators, layers, devices and systems |
| US12431861B2 (en) | 2019-07-31 | 2025-09-30 | Qxoniix Inc. | Layers, structures, acoustic wave resonators, devices and systems |
| CN111010121A (zh) * | 2019-10-18 | 2020-04-14 | 天津大学 | 带不导电插入层的体声波谐振器、滤波器和电子设备 |
| CN115461988A (zh) * | 2020-04-24 | 2022-12-09 | 华为技术有限公司 | 具有改进的压电极化均匀性的体声波器件 |
| CN111817679B (zh) * | 2020-06-09 | 2021-10-15 | 见闻录(浙江)半导体有限公司 | 一种薄膜体声波谐振器及其制作工艺 |
| WO2022230723A1 (ja) * | 2021-04-30 | 2022-11-03 | 株式会社村田製作所 | 弾性波装置 |
| US12329035B2 (en) | 2021-06-29 | 2025-06-10 | Global Communication Semiconductors, Llc | Bulk acoustic wave resonator with improved structures |
| WO2024058904A2 (en) * | 2022-09-16 | 2024-03-21 | Qorvo Us, Inc. | Baw resonator with zero-coupling in border regions |
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-
2011
- 2011-06-16 US US13/161,946 patent/US8330325B1/en active Active
-
2012
- 2012-06-15 DE DE102012210160.8A patent/DE102012210160B4/de active Active
- 2012-06-15 JP JP2012135371A patent/JP2013005446A/ja active Pending
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