JP2013005446A5 - - Google Patents

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Publication number
JP2013005446A5
JP2013005446A5 JP2012135371A JP2012135371A JP2013005446A5 JP 2013005446 A5 JP2013005446 A5 JP 2013005446A5 JP 2012135371 A JP2012135371 A JP 2012135371A JP 2012135371 A JP2012135371 A JP 2012135371A JP 2013005446 A5 JP2013005446 A5 JP 2013005446A5
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JP
Japan
Prior art keywords
piezoelectric layer
resonator structure
baw resonator
equal
width
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2012135371A
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English (en)
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JP2013005446A (ja
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Publication date
Priority claimed from US13/161,946 external-priority patent/US8330325B1/en
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Publication of JP2013005446A publication Critical patent/JP2013005446A/ja
Publication of JP2013005446A5 publication Critical patent/JP2013005446A5/ja
Pending legal-status Critical Current

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Claims (1)

  1. 前記非圧電層が、実質的に、該非圧電層における第１の伝搬固有モードの1/4波長の整数倍に等しい幅、又は該非圧電層における第１の一過性固有モードの減衰定数の逆数(1/k)以上の幅を有している、請求項８に記載のBAW共振器構造。
JP2012135371A 2011-06-16 2012-06-15 非圧電層を備えたバルク音響共振器 Pending JP2013005446A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US13/161,946 US8330325B1 (en) 2011-06-16 2011-06-16 Bulk acoustic resonator comprising non-piezoelectric layer
US13/161,946 2011-06-16

Publications (2)

Publication Number Publication Date
JP2013005446A JP2013005446A (ja) 2013-01-07
JP2013005446A5 true JP2013005446A5 (ja) 2015-07-16

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Family Applications (1)

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JP2012135371A Pending JP2013005446A (ja) 2011-06-16 2012-06-15 非圧電層を備えたバルク音響共振器

Country Status (3)

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US (1) US8330325B1 (ja)
JP (1) JP2013005446A (ja)
DE (1) DE102012210160B4 (ja)

Families Citing this family (37)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2010013197A2 (en) * 2008-08-01 2010-02-04 Ecole polytechnique fédérale de Lausanne (EPFL) Piezoelectric resonator operating in thickness shear mode
US8962443B2 (en) 2011-01-31 2015-02-24 Avago Technologies General Ip (Singapore) Pte. Ltd. Semiconductor device having an airbridge and method of fabricating the same
US9425764B2 (en) 2012-10-25 2016-08-23 Avago Technologies General Ip (Singapore) Pte. Ltd. Accoustic resonator having composite electrodes with integrated lateral features
US9444426B2 (en) 2012-10-25 2016-09-13 Avago Technologies General Ip (Singapore) Pte. Ltd. Accoustic resonator having integrated lateral feature and temperature compensation feature
US9490418B2 (en) 2011-03-29 2016-11-08 Avago Technologies General Ip (Singapore) Pte. Ltd. Acoustic resonator comprising collar and acoustic reflector with temperature compensating layer
US9484882B2 (en) 2013-02-14 2016-11-01 Avago Technologies General Ip (Singapore) Pte. Ltd. Acoustic resonator having temperature compensation
US9748918B2 (en) 2013-02-14 2017-08-29 Avago Technologies General Ip (Singapore) Pte. Ltd. Acoustic resonator comprising integrated structures for improved performance
US9590165B2 (en) 2011-03-29 2017-03-07 Avago Technologies General Ip (Singapore) Pte. Ltd. Acoustic resonator comprising aluminum scandium nitride and temperature compensation feature
US9490771B2 (en) 2012-10-29 2016-11-08 Avago Technologies General Ip (Singapore) Pte. Ltd. Acoustic resonator comprising collar and frame
US9401692B2 (en) 2012-10-29 2016-07-26 Avago Technologies General Ip (Singapore) Pte. Ltd. Acoustic resonator having collar structure
US9154111B2 (en) * 2011-05-20 2015-10-06 Avago Technologies General Ip (Singapore) Pte. Ltd. Double bulk acoustic resonator comprising aluminum scandium nitride
US9917567B2 (en) 2011-05-20 2018-03-13 Avago Technologies General Ip (Singapore) Pte. Ltd. Bulk acoustic resonator comprising aluminum scandium nitride
US9473106B2 (en) * 2011-06-21 2016-10-18 Georgia Tech Research Corporation Thin-film bulk acoustic wave delay line
JP5792554B2 (ja) * 2011-08-09 2015-10-14 太陽誘電株式会社 弾性波デバイス
US8797123B2 (en) * 2011-09-14 2014-08-05 Avago Technologies General Ip (Singapore) Pte. Ltd. Double film bulk acoustic resonator having electrode edge alignments providing improved quality factor or electromechanical coupling coefficient
US9525399B2 (en) * 2011-10-31 2016-12-20 Avago Technologies General Ip (Singapore) Pte. Ltd. Planarized electrode for improved performance in bulk acoustic resonators
CN102904546B (zh) * 2012-08-30 2016-04-13 中兴通讯股份有限公司 一种温度补偿能力可调节的压电声波谐振器
JP6110182B2 (ja) * 2013-03-29 2017-04-05 日本碍子株式会社 圧電／電歪素子
JP6325799B2 (ja) * 2013-11-11 2018-05-16 太陽誘電株式会社 圧電薄膜共振器、フィルタおよびデュプレクサ
US10804877B2 (en) * 2014-01-21 2020-10-13 Avago Technologies International Sales Pte. Limited Film bulk acoustic wave resonator (FBAR) having stress-relief
US9853626B2 (en) 2014-03-31 2017-12-26 Avago Technologies General Ip (Singapore) Pte. Ltd. Acoustic resonator comprising acoustic redistribution layers and lateral features
US9548438B2 (en) 2014-03-31 2017-01-17 Avago Technologies General Ip (Singapore) Pte. Ltd. Acoustic resonator comprising acoustic redistribution layers
US9991872B2 (en) * 2014-04-04 2018-06-05 Qorvo Us, Inc. MEMS resonator with functional layers
US9998088B2 (en) 2014-05-02 2018-06-12 Qorvo Us, Inc. Enhanced MEMS vibrating device
US10340885B2 (en) 2014-05-08 2019-07-02 Avago Technologies International Sales Pte. Limited Bulk acoustic wave devices with temperature-compensating niobium alloy electrodes
FR3047355B1 (fr) * 2016-02-01 2019-04-19 Soitec Structure hybride pour dispositif a ondes acoustiques de surface
KR20180006248A (ko) * 2016-07-07 2018-01-17 삼성전기주식회사 음향 공진기 및 그 제조 방법
US10720900B2 (en) * 2016-07-07 2020-07-21 Samsung Electro-Mechanics Co., Ltd. Acoustic resonator and method
US10873316B2 (en) 2017-03-02 2020-12-22 Samsung Electro-Mechanics Co., Ltd. Acoustic resonator and method of manufacturing the same
DE102018104712B4 (de) * 2018-03-01 2020-03-12 RF360 Europe GmbH Verfahren zum Ausbilden einer Aluminiumnitridschicht
US11095267B2 (en) * 2018-03-28 2021-08-17 Qorvo Us, Inc. Coupled resonator filter with embedded border ring
US11509287B2 (en) 2018-12-14 2022-11-22 Qorvo Us, Inc. Bi-polar border region in piezoelectric device
WO2021021743A1 (en) 2019-07-31 2021-02-04 QXONIX Inc. Temperature compensating bulk acoustic wave (baw) resonator structures, devices and systems
CN111010121A (zh) * 2019-10-18 2020-04-14 天津大学 带不导电插入层的体声波谐振器、滤波器和电子设备
CN115461988A (zh) * 2020-04-24 2022-12-09 华为技术有限公司 具有改进的压电极化均匀性的体声波器件
CN111817679B (zh) 2020-06-09 2021-10-15 见闻录(浙江)半导体有限公司 一种薄膜体声波谐振器及其制作工艺
WO2022230723A1 (ja) * 2021-04-30 2022-11-03 株式会社村田製作所 弾性波装置

Family Cites Families (62)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6165507A (ja) * 1984-09-06 1986-04-04 Nec Corp 薄膜圧電振動子の製造方法
FR2635247B1 (fr) 1988-08-05 1990-10-19 Thomson Csf Transducteur piezoelectrique pour generer des ondes de volume
US5587620A (en) 1993-12-21 1996-12-24 Hewlett-Packard Company Tunable thin film acoustic resonators and method for making the same
CN1171382C (zh) 1998-01-16 2004-10-13 三菱电机株式会社 薄膜压电元件
US6060818A (en) 1998-06-02 2000-05-09 Hewlett-Packard Company SBAR structures and method of fabrication of SBAR.FBAR film processing techniques for the manufacturing of SBAR/BAR filters
US6150703A (en) 1998-06-29 2000-11-21 Trw Inc. Lateral mode suppression in semiconductor bulk acoustic resonator (SBAR) devices using tapered electrodes, and electrodes edge damping materials
JP2000209063A (ja) 1998-11-12 2000-07-28 Mitsubishi Electric Corp 薄膜圧電素子
JP3715831B2 (ja) * 1999-05-24 2005-11-16 京セラ株式会社 圧電共振子
FI107660B (fi) * 1999-07-19 2001-09-14 Nokia Mobile Phones Ltd Resonaattorirakenne
US6107721A (en) 1999-07-27 2000-08-22 Tfr Technologies, Inc. Piezoelectric resonators on a differentially offset reflector
KR100398363B1 (ko) 2000-12-05 2003-09-19 삼성전기주식회사 Ｆｂａｒ 소자 및 그 제조방법
US6424237B1 (en) * 2000-12-21 2002-07-23 Agilent Technologies, Inc. Bulk acoustic resonator perimeter reflection system
US6522800B2 (en) 2000-12-21 2003-02-18 Bernardo F. Lucero Microstructure switches
JP2003017964A (ja) 2001-07-04 2003-01-17 Hitachi Ltd 弾性波素子の製造方法
US20040027030A1 (en) * 2002-08-08 2004-02-12 Li-Peng Wang Manufacturing film bulk acoustic resonator filters
US6816035B2 (en) * 2002-08-08 2004-11-09 Intel Corporation Forming film bulk acoustic resonator filters
AU2003282286A1 (en) * 2002-12-10 2004-06-30 Koninklijke Philips Electronics N.V. Transducer and electronic device
US6985051B2 (en) 2002-12-17 2006-01-10 The Regents Of The University Of Michigan Micromechanical resonator device and method of making a micromechanical device
FR2852165A1 (fr) 2003-03-06 2004-09-10 St Microelectronics Sa Procede de realisation d'un microresonateur piezolectrique accordable
JP2004304704A (ja) 2003-04-01 2004-10-28 Matsushita Electric Ind Co Ltd 薄膜音響共振子、及び、薄膜音響共振子回路
JP4186685B2 (ja) * 2003-04-10 2008-11-26 宇部興産株式会社 窒化アルミニウム薄膜及びそれを用いた圧電薄膜共振子
EP1469599B1 (en) 2003-04-18 2010-11-03 Samsung Electronics Co., Ltd. Air gap type FBAR, duplexer using the FBAR, and fabricating methods thereof
US6820469B1 (en) 2003-05-12 2004-11-23 Sandia Corporation Microfabricated teeter-totter resonator
US7391285B2 (en) * 2003-10-30 2008-06-24 Avago Technologies Wireless Ip Pte Ltd Film acoustically-coupled transformer
US7358831B2 (en) 2003-10-30 2008-04-15 Avago Technologies Wireless Ip (Singapore) Pte. Ltd. Film bulk acoustic resonator (FBAR) devices with simplified packaging
US7295088B2 (en) 2004-01-21 2007-11-13 The Regents Of The University Of Michigan High-Q micromechanical resonator devices and filters utilizing same
JP3945486B2 (ja) 2004-02-18 2007-07-18 ソニー株式会社 薄膜バルク音響共振子およびその製造方法
JP2005303573A (ja) * 2004-04-09 2005-10-27 Toshiba Corp 薄膜圧電共振器及びその製造方法
TW200610266A (en) 2004-06-03 2006-03-16 Sony Corp Thin film bulk acoustic resonator and method of manufacturing the same
US20060017352A1 (en) 2004-07-20 2006-01-26 Aram Tanielian Thin device and method of fabrication
US7388454B2 (en) 2004-10-01 2008-06-17 Avago Technologies Wireless Ip Pte Ltd Acoustic resonator performance enhancement using alternating frame structure
US7280007B2 (en) 2004-11-15 2007-10-09 Avago Technologies General Ip (Singapore) Pte. Ltd. Thin film bulk acoustic resonator with a mass loaded perimeter
US8981876B2 (en) 2004-11-15 2015-03-17 Avago Technologies General Ip (Singapore) Pte. Ltd. Piezoelectric resonator structures and electrical filters having frame elements
US7299529B2 (en) * 2005-06-16 2007-11-27 Intel Corporation Film bulk acoustic resonator (FBAR) process using single-step resonator layer deposition
EP1935093A2 (en) 2005-09-30 2008-06-25 Nxp B.V. Improvements in or relating to thin-film bulk-acoustic wave (baw) resonators
US20070085632A1 (en) * 2005-10-18 2007-04-19 Larson John D Iii Acoustic galvanic isolator
JP2007181185A (ja) 2005-12-01 2007-07-12 Sony Corp 音響共振器およびその製造方法
US7345410B2 (en) 2006-03-22 2008-03-18 Agilent Technologies, Inc. Temperature compensation of film bulk acoustic resonator devices
US7629865B2 (en) 2006-05-31 2009-12-08 Avago Technologies Wireless Ip (Singapore) Pte. Ltd. Piezoelectric resonator structures and electrical filters
US7508286B2 (en) 2006-09-28 2009-03-24 Avago Technologies Wireless Ip (Singapore) Pte. Ltd. HBAR oscillator and method of manufacture
JP2007028669A (ja) 2006-10-02 2007-02-01 Ube Ind Ltd 薄膜音響共振器の製造方法
US7869187B2 (en) * 2007-09-04 2011-01-11 Paratek Microwave, Inc. Acoustic bandgap structures adapted to suppress parasitic resonances in tunable ferroelectric capacitors and method of operation and fabrication therefore
JP2009100464A (ja) * 2007-09-25 2009-05-07 Panasonic Electric Works Co Ltd 共振装置およびその製造方法
US7576471B1 (en) 2007-09-28 2009-08-18 Triquint Semiconductor, Inc. SAW filter operable in a piston mode
JP2009124640A (ja) 2007-11-19 2009-06-04 Hitachi Media Electoronics Co Ltd 薄膜圧電バルク波共振器およびその製造方法、並びに薄膜圧電バルク波共振器を用いた薄膜圧電バルク波共振器フィルタ
JP5279068B2 (ja) * 2008-02-15 2013-09-04 太陽誘電株式会社 圧電薄膜共振子、フィルタ、通信モジュール、および通信装置
US7795781B2 (en) 2008-04-24 2010-09-14 Avago Technologies Wireless Ip (Singapore) Pte. Ltd. Bulk acoustic wave resonator with reduced energy loss
US7768364B2 (en) 2008-06-09 2010-08-03 Maxim Integrated Products, Inc. Bulk acoustic resonators with multi-layer electrodes
US7889024B2 (en) 2008-08-29 2011-02-15 Avago Technologies Wireless Ip (Singapore) Pte. Ltd. Single cavity acoustic resonators and electrical filters comprising single cavity acoustic resonators
US8718112B2 (en) 2008-10-10 2014-05-06 International Business Machines Corporation Radial Bragg ring resonator structure with high quality factor
US8030823B2 (en) 2009-01-26 2011-10-04 Resonance Semiconductor Corporation Protected resonator
US20100260453A1 (en) 2009-04-08 2010-10-14 Block Bruce A Quality factor (q-factor) for a waveguide micro-ring resonator
US8248185B2 (en) 2009-06-24 2012-08-21 Avago Technologies Wireless Ip (Singapore) Pte. Ltd. Acoustic resonator structure comprising a bridge
US8902023B2 (en) 2009-06-24 2014-12-02 Avago Technologies General Ip (Singapore) Pte. Ltd. Acoustic resonator structure having an electrode with a cantilevered portion
US9673778B2 (en) 2009-06-24 2017-06-06 Avago Technologies General Ip (Singapore) Pte. Ltd. Solid mount bulk acoustic wave resonator structure comprising a bridge
EP2299593A1 (en) 2009-09-18 2011-03-23 Nxp B.V. Laterally coupled bulk acoustic wave device
US20110121916A1 (en) 2009-11-24 2011-05-26 Avago Technologies Wireless Ip (Singapore) Pte. Ltd. Hybrid bulk acoustic wave resonator
US8283999B2 (en) 2010-02-23 2012-10-09 Avago Technologies Wireless Ip (Singapore) Pte. Ltd. Bulk acoustic resonator structures comprising a single material acoustic coupling layer comprising inhomogeneous acoustic property
US9154112B2 (en) 2011-02-28 2015-10-06 Avago Technologies General Ip (Singapore) Pte. Ltd. Coupled resonator filter comprising a bridge
US9136818B2 (en) 2011-02-28 2015-09-15 Avago Technologies General Ip (Singapore) Pte. Ltd. Stacked acoustic resonator comprising a bridge
US8575820B2 (en) 2011-03-29 2013-11-05 Avago Technologies General Ip (Singapore) Pte. Ltd. Stacked bulk acoustic resonator
US8872604B2 (en) 2011-05-05 2014-10-28 Avago Technologies General Ip (Singapore) Pte. Ltd. Double film bulk acoustic resonators with electrode layer and piezo-electric layer thicknesses providing improved quality factor

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