JP2013005446A - 非圧電層を備えたバルク音響共振器 - Google Patents

非圧電層を備えたバルク音響共振器 Download PDF

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Publication number
JP2013005446A
JP2013005446A JP2012135371A JP2012135371A JP2013005446A JP 2013005446 A JP2013005446 A JP 2013005446A JP 2012135371 A JP2012135371 A JP 2012135371A JP 2012135371 A JP2012135371 A JP 2012135371A JP 2013005446 A JP2013005446 A JP 2013005446A
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layer
piezoelectric layer
electrode
piezoelectric
disposed
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JP2012135371A
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Japanese (ja)
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JP2013005446A5 (enExample
Inventor
Burak Dariusz
ダリウズ・ブラク
Kaitila Jyrki
ジルキ・カイティラ
Shirakawa Alexandre
アレキサンドル・シラカワ
Handman Martin
マルティン・ハンドマン
Nickel Phil
フィル・ニッケル
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Avago Technologies International Sales Pte Ltd
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Avago Technologies Wireless IP Singapore Pte Ltd
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Publication of JP2013005446A5 publication Critical patent/JP2013005446A5/ja
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    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
    • H03H9/15—Constructional features of resonators consisting of piezoelectric or electrostrictive material
    • H03H9/17—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator
    • H03H9/171—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator implemented with thin-film techniques, i.e. of the film bulk acoustic resonator [FBAR] type
    • H03H9/172—Means for mounting on a substrate, i.e. means constituting the material interface confining the waves to a volume
    • H03H9/173—Air-gaps
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
    • H03H9/46—Filters
    • H03H9/54—Filters comprising resonators of piezoelectric or electrostrictive material
    • H03H9/58—Multiple crystal filters
    • H03H9/582—Multiple crystal filters implemented with thin-film techniques
    • H03H9/583—Multiple crystal filters implemented with thin-film techniques comprising a plurality of piezoelectric layers acoustically coupled
    • H03H9/585—Stacked Crystal Filters [SCF]

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  • Physics & Mathematics (AREA)
  • Acoustics & Sound (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Piezo-Electric Or Mechanical Vibrators, Or Delay Or Filter Circuits (AREA)
JP2012135371A 2011-06-16 2012-06-15 非圧電層を備えたバルク音響共振器 Pending JP2013005446A (ja)

Applications Claiming Priority (2)

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US13/161,946 US8330325B1 (en) 2011-06-16 2011-06-16 Bulk acoustic resonator comprising non-piezoelectric layer
US13/161,946 2011-06-16

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JP2013005446A true JP2013005446A (ja) 2013-01-07
JP2013005446A5 JP2013005446A5 (enExample) 2015-07-16

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US (1) US8330325B1 (enExample)
JP (1) JP2013005446A (enExample)
DE (1) DE102012210160B4 (enExample)

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JP2014195001A (ja) * 2013-03-29 2014-10-09 Ngk Insulators Ltd 圧電／電歪素子
JP2015095729A (ja) * 2013-11-11 2015-05-18 太陽誘電株式会社 圧電薄膜共振器、フィルタおよびデュプレクサ
JP2018007230A (ja) * 2016-07-07 2018-01-11 サムソン エレクトロ−メカニックス カンパニーリミテッド． 音響共振器及びその製造方法
KR20180006248A (ko) * 2016-07-07 2018-01-17 삼성전기주식회사 음향 공진기 및 그 제조 방법
JP2019198066A (ja) * 2018-03-28 2019-11-14 コーボ ユーエス，インコーポレイティド 埋め込み型境界リングを備えた結合共振器フィルタ
JP2022080885A (ja) * 2020-11-18 2022-05-30 シアン サン、ニアン 磁気電気アンテナアレイ
WO2022230723A1 (ja) * 2021-04-30 2022-11-03 株式会社村田製作所 弾性波装置
JP2023522485A (ja) * 2020-06-09 2023-05-30 見聞録（浙江）半導体有限公司 薄膜バルク音波共振器及びその製造工程
US11784628B2 (en) 2018-12-14 2023-10-10 Qorvo Us, Inc. Bi-polar border region in piezoelectric device

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US9401692B2 (en) 2012-10-29 2016-07-26 Avago Technologies General Ip (Singapore) Pte. Ltd. Acoustic resonator having collar structure
US9490771B2 (en) 2012-10-29 2016-11-08 Avago Technologies General Ip (Singapore) Pte. Ltd. Acoustic resonator comprising collar and frame
US9484882B2 (en) 2013-02-14 2016-11-01 Avago Technologies General Ip (Singapore) Pte. Ltd. Acoustic resonator having temperature compensation
US9590165B2 (en) 2011-03-29 2017-03-07 Avago Technologies General Ip (Singapore) Pte. Ltd. Acoustic resonator comprising aluminum scandium nitride and temperature compensation feature
US9748918B2 (en) 2013-02-14 2017-08-29 Avago Technologies General Ip (Singapore) Pte. Ltd. Acoustic resonator comprising integrated structures for improved performance
US9490418B2 (en) 2011-03-29 2016-11-08 Avago Technologies General Ip (Singapore) Pte. Ltd. Acoustic resonator comprising collar and acoustic reflector with temperature compensating layer
US9444426B2 (en) 2012-10-25 2016-09-13 Avago Technologies General Ip (Singapore) Pte. Ltd. Accoustic resonator having integrated lateral feature and temperature compensation feature
US9917567B2 (en) 2011-05-20 2018-03-13 Avago Technologies General Ip (Singapore) Pte. Ltd. Bulk acoustic resonator comprising aluminum scandium nitride
US9154111B2 (en) * 2011-05-20 2015-10-06 Avago Technologies General Ip (Singapore) Pte. Ltd. Double bulk acoustic resonator comprising aluminum scandium nitride
US9473106B2 (en) * 2011-06-21 2016-10-18 Georgia Tech Research Corporation Thin-film bulk acoustic wave delay line
JP5792554B2 (ja) * 2011-08-09 2015-10-14 太陽誘電株式会社 弾性波デバイス
US8797123B2 (en) * 2011-09-14 2014-08-05 Avago Technologies General Ip (Singapore) Pte. Ltd. Double film bulk acoustic resonator having electrode edge alignments providing improved quality factor or electromechanical coupling coefficient
US9525399B2 (en) * 2011-10-31 2016-12-20 Avago Technologies General Ip (Singapore) Pte. Ltd. Planarized electrode for improved performance in bulk acoustic resonators
CN102904546B (zh) * 2012-08-30 2016-04-13 中兴通讯股份有限公司 一种温度补偿能力可调节的压电声波谐振器
US10804877B2 (en) * 2014-01-21 2020-10-13 Avago Technologies International Sales Pte. Limited Film bulk acoustic wave resonator (FBAR) having stress-relief
US9853626B2 (en) 2014-03-31 2017-12-26 Avago Technologies General Ip (Singapore) Pte. Ltd. Acoustic resonator comprising acoustic redistribution layers and lateral features
US9548438B2 (en) 2014-03-31 2017-01-17 Avago Technologies General Ip (Singapore) Pte. Ltd. Acoustic resonator comprising acoustic redistribution layers
US9991872B2 (en) * 2014-04-04 2018-06-05 Qorvo Us, Inc. MEMS resonator with functional layers
US9998088B2 (en) 2014-05-02 2018-06-12 Qorvo Us, Inc. Enhanced MEMS vibrating device
US10340885B2 (en) 2014-05-08 2019-07-02 Avago Technologies International Sales Pte. Limited Bulk acoustic wave devices with temperature-compensating niobium alloy electrodes
FR3047355B1 (fr) * 2016-02-01 2019-04-19 Soitec Structure hybride pour dispositif a ondes acoustiques de surface
US10873316B2 (en) 2017-03-02 2020-12-22 Samsung Electro-Mechanics Co., Ltd. Acoustic resonator and method of manufacturing the same
DE102018104712B4 (de) 2018-03-01 2020-03-12 RF360 Europe GmbH Verfahren zum Ausbilden einer Aluminiumnitridschicht
US12155368B2 (en) * 2018-07-20 2024-11-26 Global Communication Semiconductors, Llc Support structure for bulk acoustic wave resonator
US11502667B2 (en) 2019-01-14 2022-11-15 Qorvo Us, Inc. Top electrodes with step arrangements for bulk acoustic wave resonators
WO2021021748A1 (en) 2019-07-31 2021-02-04 QXONIX Inc. Structures, acoustic wave resonators, devices and systems
US12451860B2 (en) 2019-07-31 2025-10-21 QXONIX Inc. Structures, acoustic wave resonators, devices and systems
US12445109B2 (en) 2019-07-31 2025-10-14 QXONIX Inc. Structures, acoustic wave resonators, layers, devices and systems
US12431861B2 (en) 2019-07-31 2025-09-30 Qxoniix Inc. Layers, structures, acoustic wave resonators, devices and systems
CN111010121A (zh) * 2019-10-18 2020-04-14 天津大学 带不导电插入层的体声波谐振器、滤波器和电子设备
CN115461988A (zh) * 2020-04-24 2022-12-09 华为技术有限公司 具有改进的压电极化均匀性的体声波器件
US12329035B2 (en) 2021-06-29 2025-06-10 Global Communication Semiconductors, Llc Bulk acoustic wave resonator with improved structures
WO2024058904A2 (en) * 2022-09-16 2024-03-21 Qorvo Us, Inc. Baw resonator with zero-coupling in border regions

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JP2014195001A (ja) * 2013-03-29 2014-10-09 Ngk Insulators Ltd 圧電／電歪素子
JP2015095729A (ja) * 2013-11-11 2015-05-18 太陽誘電株式会社 圧電薄膜共振器、フィルタおよびデュプレクサ
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US11784628B2 (en) 2018-12-14 2023-10-10 Qorvo Us, Inc. Bi-polar border region in piezoelectric device
JP2023522485A (ja) * 2020-06-09 2023-05-30 見聞録（浙江）半導体有限公司 薄膜バルク音波共振器及びその製造工程
US11901872B2 (en) 2020-06-09 2024-02-13 Jwl (Zhejiang) Semiconductor Co., Ltd. Thin film bulk acoustic resonator and manufacturing process therefor
JP2022080885A (ja) * 2020-11-18 2022-05-30 シアン サン、ニアン 磁気電気アンテナアレイ
WO2022230723A1 (ja) * 2021-04-30 2022-11-03 株式会社村田製作所 弾性波装置

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DE102012210160A1 (de) 2012-12-20
DE102012210160B4 (de) 2023-12-07
US20120319530A1 (en) 2012-12-20
US8330325B1 (en) 2012-12-11

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