DE102012210160B4 - Bulkakustikresonator, der eine nicht-piezoelektrische Schicht aufweist - Google Patents

Bulkakustikresonator, der eine nicht-piezoelektrische Schicht aufweist Download PDF

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Publication number
DE102012210160B4
DE102012210160B4 DE102012210160.8A DE102012210160A DE102012210160B4 DE 102012210160 B4 DE102012210160 B4 DE 102012210160B4 DE 102012210160 A DE102012210160 A DE 102012210160A DE 102012210160 B4 DE102012210160 B4 DE 102012210160B4
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layer
piezoelectric layer
electrode
piezoelectric
overlap
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German (de)
English (en)
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DE102012210160A1 (de
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Jyrki Kaitila
Alexandre Shirakawa
Martin Handtmann
Phil Nikkel
Dariusz Burak
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Avago Technologies International Sales Pte Ltd
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Avago Technologies International Sales Pte Ltd
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    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
    • H03H9/15—Constructional features of resonators consisting of piezoelectric or electrostrictive material
    • H03H9/17—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator
    • H03H9/171—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator implemented with thin-film techniques, i.e. of the film bulk acoustic resonator [FBAR] type
    • H03H9/172—Means for mounting on a substrate, i.e. means constituting the material interface confining the waves to a volume
    • H03H9/173—Air-gaps
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
    • H03H9/46—Filters
    • H03H9/54—Filters comprising resonators of piezoelectric or electrostrictive material
    • H03H9/58—Multiple crystal filters
    • H03H9/582—Multiple crystal filters implemented with thin-film techniques
    • H03H9/583—Multiple crystal filters implemented with thin-film techniques comprising a plurality of piezoelectric layers acoustically coupled
    • H03H9/585—Stacked Crystal Filters [SCF]

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  • Physics & Mathematics (AREA)
  • Acoustics & Sound (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Piezo-Electric Or Mechanical Vibrators, Or Delay Or Filter Circuits (AREA)
DE102012210160.8A 2011-06-16 2012-06-15 Bulkakustikresonator, der eine nicht-piezoelektrische Schicht aufweist Active DE102012210160B4 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US13/161,946 US8330325B1 (en) 2011-06-16 2011-06-16 Bulk acoustic resonator comprising non-piezoelectric layer
US13/161,946 2011-06-16

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DE102012210160A1 DE102012210160A1 (de) 2012-12-20
DE102012210160B4 true DE102012210160B4 (de) 2023-12-07

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US (1) US8330325B1 (enExample)
JP (1) JP2013005446A (enExample)
DE (1) DE102012210160B4 (enExample)

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US8962443B2 (en) 2011-01-31 2015-02-24 Avago Technologies General Ip (Singapore) Pte. Ltd. Semiconductor device having an airbridge and method of fabricating the same
US9425764B2 (en) 2012-10-25 2016-08-23 Avago Technologies General Ip (Singapore) Pte. Ltd. Accoustic resonator having composite electrodes with integrated lateral features
US9401692B2 (en) 2012-10-29 2016-07-26 Avago Technologies General Ip (Singapore) Pte. Ltd. Acoustic resonator having collar structure
US9490771B2 (en) 2012-10-29 2016-11-08 Avago Technologies General Ip (Singapore) Pte. Ltd. Acoustic resonator comprising collar and frame
US9484882B2 (en) 2013-02-14 2016-11-01 Avago Technologies General Ip (Singapore) Pte. Ltd. Acoustic resonator having temperature compensation
US9590165B2 (en) 2011-03-29 2017-03-07 Avago Technologies General Ip (Singapore) Pte. Ltd. Acoustic resonator comprising aluminum scandium nitride and temperature compensation feature
US9748918B2 (en) 2013-02-14 2017-08-29 Avago Technologies General Ip (Singapore) Pte. Ltd. Acoustic resonator comprising integrated structures for improved performance
US9490418B2 (en) 2011-03-29 2016-11-08 Avago Technologies General Ip (Singapore) Pte. Ltd. Acoustic resonator comprising collar and acoustic reflector with temperature compensating layer
US9444426B2 (en) 2012-10-25 2016-09-13 Avago Technologies General Ip (Singapore) Pte. Ltd. Accoustic resonator having integrated lateral feature and temperature compensation feature
US9917567B2 (en) 2011-05-20 2018-03-13 Avago Technologies General Ip (Singapore) Pte. Ltd. Bulk acoustic resonator comprising aluminum scandium nitride
US9154111B2 (en) * 2011-05-20 2015-10-06 Avago Technologies General Ip (Singapore) Pte. Ltd. Double bulk acoustic resonator comprising aluminum scandium nitride
US9473106B2 (en) * 2011-06-21 2016-10-18 Georgia Tech Research Corporation Thin-film bulk acoustic wave delay line
JP5792554B2 (ja) * 2011-08-09 2015-10-14 太陽誘電株式会社 弾性波デバイス
US8797123B2 (en) * 2011-09-14 2014-08-05 Avago Technologies General Ip (Singapore) Pte. Ltd. Double film bulk acoustic resonator having electrode edge alignments providing improved quality factor or electromechanical coupling coefficient
US9525399B2 (en) * 2011-10-31 2016-12-20 Avago Technologies General Ip (Singapore) Pte. Ltd. Planarized electrode for improved performance in bulk acoustic resonators
CN102904546B (zh) * 2012-08-30 2016-04-13 中兴通讯股份有限公司 一种温度补偿能力可调节的压电声波谐振器
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JP6325799B2 (ja) * 2013-11-11 2018-05-16 太陽誘電株式会社 圧電薄膜共振器、フィルタおよびデュプレクサ
US10804877B2 (en) * 2014-01-21 2020-10-13 Avago Technologies International Sales Pte. Limited Film bulk acoustic wave resonator (FBAR) having stress-relief
US9853626B2 (en) 2014-03-31 2017-12-26 Avago Technologies General Ip (Singapore) Pte. Ltd. Acoustic resonator comprising acoustic redistribution layers and lateral features
US9548438B2 (en) 2014-03-31 2017-01-17 Avago Technologies General Ip (Singapore) Pte. Ltd. Acoustic resonator comprising acoustic redistribution layers
US9991872B2 (en) * 2014-04-04 2018-06-05 Qorvo Us, Inc. MEMS resonator with functional layers
US9998088B2 (en) 2014-05-02 2018-06-12 Qorvo Us, Inc. Enhanced MEMS vibrating device
US10340885B2 (en) 2014-05-08 2019-07-02 Avago Technologies International Sales Pte. Limited Bulk acoustic wave devices with temperature-compensating niobium alloy electrodes
FR3047355B1 (fr) * 2016-02-01 2019-04-19 Soitec Structure hybride pour dispositif a ondes acoustiques de surface
KR102703814B1 (ko) * 2016-07-07 2024-09-04 삼성전기주식회사 음향 공진기 및 그 제조 방법
US10720900B2 (en) * 2016-07-07 2020-07-21 Samsung Electro-Mechanics Co., Ltd. Acoustic resonator and method
US10873316B2 (en) 2017-03-02 2020-12-22 Samsung Electro-Mechanics Co., Ltd. Acoustic resonator and method of manufacturing the same
DE102018104712B4 (de) 2018-03-01 2020-03-12 RF360 Europe GmbH Verfahren zum Ausbilden einer Aluminiumnitridschicht
US11095267B2 (en) * 2018-03-28 2021-08-17 Qorvo Us, Inc. Coupled resonator filter with embedded border ring
US12155368B2 (en) * 2018-07-20 2024-11-26 Global Communication Semiconductors, Llc Support structure for bulk acoustic wave resonator
US12463618B2 (en) * 2018-11-27 2025-11-04 Winchester Technologies, LLC Magnetoelectric antenna arrays
US11509287B2 (en) 2018-12-14 2022-11-22 Qorvo Us, Inc. Bi-polar border region in piezoelectric device
US11502667B2 (en) 2019-01-14 2022-11-15 Qorvo Us, Inc. Top electrodes with step arrangements for bulk acoustic wave resonators
WO2021021748A1 (en) 2019-07-31 2021-02-04 QXONIX Inc. Structures, acoustic wave resonators, devices and systems
US12451860B2 (en) 2019-07-31 2025-10-21 QXONIX Inc. Structures, acoustic wave resonators, devices and systems
US12445109B2 (en) 2019-07-31 2025-10-14 QXONIX Inc. Structures, acoustic wave resonators, layers, devices and systems
US12431861B2 (en) 2019-07-31 2025-09-30 Qxoniix Inc. Layers, structures, acoustic wave resonators, devices and systems
CN111010121A (zh) * 2019-10-18 2020-04-14 天津大学 带不导电插入层的体声波谐振器、滤波器和电子设备
CN115461988A (zh) * 2020-04-24 2022-12-09 华为技术有限公司 具有改进的压电极化均匀性的体声波器件
CN111817679B (zh) * 2020-06-09 2021-10-15 见闻录(浙江)半导体有限公司 一种薄膜体声波谐振器及其制作工艺
WO2022230723A1 (ja) * 2021-04-30 2022-11-03 株式会社村田製作所 弾性波装置
US12329035B2 (en) 2021-06-29 2025-06-10 Global Communication Semiconductors, Llc Bulk acoustic wave resonator with improved structures
WO2024058904A2 (en) * 2022-09-16 2024-03-21 Qorvo Us, Inc. Baw resonator with zero-coupling in border regions

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DE102012210160A1 (de) 2012-12-20
JP2013005446A (ja) 2013-01-07
US20120319530A1 (en) 2012-12-20
US8330325B1 (en) 2012-12-11

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