JP2012533187A5 - - Google Patents
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- Publication number
- JP2012533187A5 JP2012533187A5 JP2012520589A JP2012520589A JP2012533187A5 JP 2012533187 A5 JP2012533187 A5 JP 2012533187A5 JP 2012520589 A JP2012520589 A JP 2012520589A JP 2012520589 A JP2012520589 A JP 2012520589A JP 2012533187 A5 JP2012533187 A5 JP 2012533187A5
- Authority
- JP
- Japan
- Prior art keywords
- layer
- oxide
- zinc
- photovoltaic device
- dopant
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000000034 method Methods 0.000 claims 73
- 239000002019 doping agent Substances 0.000 claims 25
- 238000000151 deposition Methods 0.000 claims 17
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 claims 14
- WUPHOULIZUERAE-UHFFFAOYSA-N 3-(oxolan-2-yl)propanoic acid Chemical compound OC(=O)CCC1CCCO1 WUPHOULIZUERAE-UHFFFAOYSA-N 0.000 claims 7
- 229910052980 cadmium sulfide Inorganic materials 0.000 claims 7
- 238000004544 sputter deposition Methods 0.000 claims 7
- 239000011787 zinc oxide Substances 0.000 claims 7
- 239000000758 substrate Substances 0.000 claims 6
- SKJCKYVIQGBWTN-UHFFFAOYSA-N (4-hydroxyphenyl) methanesulfonate Chemical compound CS(=O)(=O)OC1=CC=C(O)C=C1 SKJCKYVIQGBWTN-UHFFFAOYSA-N 0.000 claims 5
- 229910052782 aluminium Inorganic materials 0.000 claims 5
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims 5
- 239000002243 precursor Substances 0.000 claims 5
- 239000011701 zinc Substances 0.000 claims 5
- MARUHZGHZWCEQU-UHFFFAOYSA-N 5-phenyl-2h-tetrazole Chemical compound C1=CC=CC=C1C1=NNN=N1 MARUHZGHZWCEQU-UHFFFAOYSA-N 0.000 claims 4
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 claims 4
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 claims 4
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims 4
- PXGOKWXKJXAPGV-UHFFFAOYSA-N Fluorine Chemical compound FF PXGOKWXKJXAPGV-UHFFFAOYSA-N 0.000 claims 4
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 claims 4
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 claims 4
- 229910052796 boron Inorganic materials 0.000 claims 4
- CXKCTMHTOKXKQT-UHFFFAOYSA-N cadmium oxide Inorganic materials [Cd]=O CXKCTMHTOKXKQT-UHFFFAOYSA-N 0.000 claims 4
- CFEAAQFZALKQPA-UHFFFAOYSA-N cadmium(2+);oxygen(2-) Chemical compound [O-2].[Cd+2] CFEAAQFZALKQPA-UHFFFAOYSA-N 0.000 claims 4
- 229910052801 chlorine Inorganic materials 0.000 claims 4
- 239000000460 chlorine Substances 0.000 claims 4
- 229910052802 copper Inorganic materials 0.000 claims 4
- 239000010949 copper Substances 0.000 claims 4
- 229910052731 fluorine Inorganic materials 0.000 claims 4
- 239000011737 fluorine Substances 0.000 claims 4
- 229910052733 gallium Inorganic materials 0.000 claims 4
- 229910052738 indium Inorganic materials 0.000 claims 4
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 claims 4
- 229910052749 magnesium Inorganic materials 0.000 claims 4
- 239000011777 magnesium Substances 0.000 claims 4
- 239000004065 semiconductor Substances 0.000 claims 4
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 claims 4
- 229910001887 tin oxide Inorganic materials 0.000 claims 4
- 239000005083 Zinc sulfide Substances 0.000 claims 3
- BEQHLYKBDITGQZ-UHFFFAOYSA-N [Mg++].[S--].[S--].[Cd++] Chemical compound [Mg++].[S--].[S--].[Cd++] BEQHLYKBDITGQZ-UHFFFAOYSA-N 0.000 claims 3
- 238000000137 annealing Methods 0.000 claims 3
- 239000000919 ceramic Substances 0.000 claims 3
- PNHVEGMHOXTHMW-UHFFFAOYSA-N magnesium;zinc;oxygen(2-) Chemical compound [O-2].[O-2].[Mg+2].[Zn+2] PNHVEGMHOXTHMW-UHFFFAOYSA-N 0.000 claims 3
- 238000004519 manufacturing process Methods 0.000 claims 3
- 229910052751 metal Inorganic materials 0.000 claims 3
- 239000002184 metal Substances 0.000 claims 3
- 238000005546 reactive sputtering Methods 0.000 claims 3
- 229910052984 zinc sulfide Inorganic materials 0.000 claims 3
- UQMZPFKLYHOJDL-UHFFFAOYSA-N zinc;cadmium(2+);disulfide Chemical compound [S-2].[S-2].[Zn+2].[Cd+2] UQMZPFKLYHOJDL-UHFFFAOYSA-N 0.000 claims 3
- DRDVZXDWVBGGMH-UHFFFAOYSA-N zinc;sulfide Chemical compound [S-2].[Zn+2] DRDVZXDWVBGGMH-UHFFFAOYSA-N 0.000 claims 3
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 claims 2
- IZHOVLXXYOZDLW-UHFFFAOYSA-N [O-2].[Al+3].[Sn+4] Chemical compound [O-2].[Al+3].[Sn+4] IZHOVLXXYOZDLW-UHFFFAOYSA-N 0.000 claims 2
- JYMITAMFTJDTAE-UHFFFAOYSA-N aluminum zinc oxygen(2-) Chemical compound [O-2].[Al+3].[Zn+2] JYMITAMFTJDTAE-UHFFFAOYSA-N 0.000 claims 2
- QWUZMTJBRUASOW-UHFFFAOYSA-N cadmium tellanylidenezinc Chemical compound [Zn].[Cd].[Te] QWUZMTJBRUASOW-UHFFFAOYSA-N 0.000 claims 2
- DOVLZBWRSUUIJA-UHFFFAOYSA-N oxotin;silicon Chemical compound [Si].[Sn]=O DOVLZBWRSUUIJA-UHFFFAOYSA-N 0.000 claims 2
- 150000003839 salts Chemical class 0.000 claims 2
- 229910052725 zinc Inorganic materials 0.000 claims 2
- AKVPCIASSWRYTN-UHFFFAOYSA-N zinc oxygen(2-) silicon(4+) Chemical compound [Si+4].[O-2].[Zn+2].[O-2].[O-2] AKVPCIASSWRYTN-UHFFFAOYSA-N 0.000 claims 2
- UPAJIVXVLIMMER-UHFFFAOYSA-N zinc oxygen(2-) zirconium(4+) Chemical compound [O-2].[O-2].[O-2].[Zn+2].[Zr+4] UPAJIVXVLIMMER-UHFFFAOYSA-N 0.000 claims 2
- BTBUEUYNUDRHOZ-UHFFFAOYSA-N Borate Chemical compound [O-]B([O-])[O-] BTBUEUYNUDRHOZ-UHFFFAOYSA-N 0.000 claims 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims 1
- QCWXUUIWCKQGHC-UHFFFAOYSA-N Zirconium Chemical compound [Zr] QCWXUUIWCKQGHC-UHFFFAOYSA-N 0.000 claims 1
- QBMOKCWBZBOOTK-UHFFFAOYSA-N [O--].[O--].[O--].[O--].[Zr+4].[Sn+4] Chemical compound [O--].[O--].[O--].[O--].[Zr+4].[Sn+4] QBMOKCWBZBOOTK-UHFFFAOYSA-N 0.000 claims 1
- 238000010521 absorption reaction Methods 0.000 claims 1
- 238000004140 cleaning Methods 0.000 claims 1
- 230000008021 deposition Effects 0.000 claims 1
- 238000005137 deposition process Methods 0.000 claims 1
- HTJNDQNBKKHPAQ-UHFFFAOYSA-N oxotin zirconium Chemical compound [Sn]=O.[Zr] HTJNDQNBKKHPAQ-UHFFFAOYSA-N 0.000 claims 1
- 229910052710 silicon Inorganic materials 0.000 claims 1
- 239000010703 silicon Substances 0.000 claims 1
- 229910052726 zirconium Inorganic materials 0.000 claims 1
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US22494109P | 2009-07-13 | 2009-07-13 | |
| US61/224,941 | 2009-07-13 | ||
| PCT/US2010/001942 WO2011008254A1 (en) | 2009-07-13 | 2010-07-09 | Solar cell front contact doping |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2012533187A JP2012533187A (ja) | 2012-12-20 |
| JP2012533187A5 true JP2012533187A5 (enExample) | 2013-08-15 |
| JP5878465B2 JP5878465B2 (ja) | 2016-03-08 |
Family
ID=43426537
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2012520589A Expired - Fee Related JP5878465B2 (ja) | 2009-07-13 | 2010-07-09 | 太陽電池フロントコンタクトのドーピング |
Country Status (8)
| Country | Link |
|---|---|
| US (2) | US9153730B2 (enExample) |
| EP (1) | EP2454755A4 (enExample) |
| JP (1) | JP5878465B2 (enExample) |
| KR (1) | KR20120052310A (enExample) |
| CN (1) | CN102625953B (enExample) |
| IN (1) | IN2012DN00356A (enExample) |
| TW (1) | TWI545785B (enExample) |
| WO (1) | WO2011008254A1 (enExample) |
Families Citing this family (15)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| IN2012DN02167A (enExample) * | 2009-09-11 | 2015-08-21 | First Solar Inc | |
| US9082903B2 (en) | 2010-09-22 | 2015-07-14 | First Solar, Inc. | Photovoltaic device with a zinc magnesium oxide window layer |
| CN103283031B (zh) | 2010-09-22 | 2016-08-17 | 第一太阳能有限公司 | 包含n型掺杂剂源的光伏装置 |
| WO2013119550A1 (en) | 2012-02-10 | 2013-08-15 | Alliance For Sustainable Energy, Llc | Thin film photovoltaic devices with a minimally conductive buffer layer |
| US9054245B2 (en) * | 2012-03-02 | 2015-06-09 | First Solar, Inc. | Doping an absorber layer of a photovoltaic device via diffusion from a window layer |
| US9565213B2 (en) * | 2012-10-22 | 2017-02-07 | Centripetal Networks, Inc. | Methods and systems for protecting a secured network |
| WO2014077895A1 (en) | 2012-11-19 | 2014-05-22 | Alliance For Sustainable Energy, Llc | Devices and methods featuring the addition of refractory metals to contact interface layers |
| TWI584162B (zh) * | 2012-11-26 | 2017-05-21 | 揚昇照明股份有限公司 | 觸控裝置的製造方法 |
| US9520530B2 (en) * | 2014-10-03 | 2016-12-13 | Taiwan Semiconductor Manufacturing Co., Ltd. | Solar cell having doped buffer layer and method of fabricating the solar cell |
| US10496989B2 (en) * | 2016-02-22 | 2019-12-03 | Bank Of America Corporation | System to enable contactless access to a transaction terminal using a process data network |
| CN107123693B (zh) * | 2017-04-14 | 2020-05-22 | 华南理工大学 | 一种基于溶液法加工的具有高透明窗口层材料的高效CdTe纳米晶太阳电池及其制备方法 |
| WO2020008839A1 (ja) * | 2018-07-02 | 2020-01-09 | 国立大学法人東京工業大学 | 光電子素子、これを用いた平面ディスプレイ、及び光電子素子の製造方法 |
| JP7362734B2 (ja) | 2018-10-24 | 2023-10-17 | ファースト・ソーラー・インコーポレーテッド | Ｖ族ドーピングを有する光起電デバイスの緩衝層 |
| KR102601839B1 (ko) | 2019-09-26 | 2023-11-14 | 레이던 컴퍼니 | Emi로부터 ir 투과 윈도우 및 돔을 보호하는 방법 |
| US11515147B2 (en) * | 2019-12-09 | 2022-11-29 | Micron Technology, Inc. | Material deposition systems, and related methods |
Family Cites Families (33)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3496024A (en) * | 1961-10-09 | 1970-02-17 | Monsanto Co | Photovoltaic cell with a graded energy gap |
| DE4132882C2 (de) * | 1991-10-03 | 1996-05-09 | Antec Angewandte Neue Technolo | Verfahren zur Herstellung von pn CdTe/CdS-Dünnschichtsolarzellen |
| JP3606886B2 (ja) * | 1993-02-04 | 2005-01-05 | 松下電器産業株式会社 | 太陽電池及びその製造方法 |
| JP3497249B2 (ja) * | 1994-09-16 | 2004-02-16 | 松下電池工業株式会社 | 太陽電池の製造法 |
| JPH0974210A (ja) * | 1995-09-04 | 1997-03-18 | Japan Energy Corp | 太陽電池の製造方法 |
| US5916375A (en) * | 1995-12-07 | 1999-06-29 | Japan Energy Corporation | Method of producing photoelectric conversion device |
| US6221495B1 (en) * | 1996-11-07 | 2001-04-24 | Midwest Research Institute | Thin transparent conducting films of cadmium stannate |
| US5922142A (en) * | 1996-11-07 | 1999-07-13 | Midwest Research Institute | Photovoltaic devices comprising cadmium stannate transparent conducting films and method for making |
| WO2003032406A2 (en) | 2001-10-05 | 2003-04-17 | Solar Systems & Equipments S.R.L. | A process for large-scale production of cdte/cds thin film solar cells |
| CN100459174C (zh) * | 2004-01-13 | 2009-02-04 | 松下电器产业株式会社 | 太阳电池及其制造方法 |
| US8207442B2 (en) | 2006-04-18 | 2012-06-26 | Itn Energy Systems, Inc. | Reinforcing structures for thin-film photovoltaic device substrates, and associated methods |
| GB0608987D0 (en) * | 2006-05-08 | 2006-06-14 | Univ Wales Bangor | Manufacture of CdTe photovoltaic cells using MOCVD |
| JP2008088382A (ja) | 2006-10-05 | 2008-04-17 | Mitsubishi Rayon Co Ltd | 硬化性組成物、その硬化物および光情報媒体 |
| US20080105298A1 (en) * | 2006-11-02 | 2008-05-08 | Guardian Industries Corp. | Front electrode for use in photovoltaic device and method of making same |
| US20080302414A1 (en) * | 2006-11-02 | 2008-12-11 | Den Boer Willem | Front electrode for use in photovoltaic device and method of making same |
| US20080169021A1 (en) * | 2007-01-16 | 2008-07-17 | Guardian Industries Corp. | Method of making TCO front electrode for use in photovoltaic device or the like |
| US20080223430A1 (en) * | 2007-03-14 | 2008-09-18 | Guardian Industries Corp. | Buffer layer for front electrode structure in photovoltaic device or the like |
| US20090014065A1 (en) * | 2007-07-12 | 2009-01-15 | Applied Materials, Inc. | Method for the production of a transparent conductive oxide coating |
| KR20090006755A (ko) * | 2007-07-12 | 2009-01-15 | 어플라이드 머티어리얼스, 인코포레이티드 | 투명 전도성 산화물 코팅의 제조 방법 |
| WO2009012346A1 (en) * | 2007-07-16 | 2009-01-22 | Ascent Solar Technologies, Inc. | Methods for fabricating p-type cadmium selenide |
| JP4783908B2 (ja) * | 2007-07-18 | 2011-09-28 | 株式会社豊田中央研究所 | 光電素子 |
| JP2009074210A (ja) | 2007-09-21 | 2009-04-09 | Mitsuboshi Belting Ltd | ベルト用コードの接着処理方法 |
| KR101538817B1 (ko) * | 2007-09-25 | 2015-07-22 | 퍼스트 솔라, 인코포레이티드 | 헤테로접합을 포함하는 광기전 장치 |
| ITMI20071907A1 (it) * | 2007-10-04 | 2009-04-05 | Petr Nozar | Processo per la preparazione di una cella solare. |
| MY169596A (en) * | 2007-11-02 | 2019-04-22 | First Solar Inc | Photovoltaic devices including doped semiconductor films |
| CN201156545Y (zh) * | 2008-01-07 | 2008-11-26 | 四川大学 | 一种锑化铝透明薄膜太阳电池 |
| US8143512B2 (en) * | 2008-03-26 | 2012-03-27 | Solexant Corp. | Junctions in substrate solar cells |
| US8802977B2 (en) * | 2008-05-09 | 2014-08-12 | International Business Machines Corporation | Techniques for enhancing performance of photovoltaic devices |
| CN101276854B (zh) * | 2008-05-09 | 2010-06-09 | 上海太阳能电池研究与发展中心 | 碲锌镉薄膜太阳能电池 |
| KR20090131841A (ko) * | 2008-06-19 | 2009-12-30 | 삼성전자주식회사 | 광전 소자 |
| EP2351094A2 (en) * | 2008-07-17 | 2011-08-03 | Uriel Solar Inc. | High power efficiency, large substrate, polycrystalline cdte thin film semiconductor photovoltaic cell structures grown by molecular beam epitaxy at high deposition rate for use in solar electricity generation |
| US20100051105A1 (en) * | 2008-08-26 | 2010-03-04 | Mustafa Pinarbasi | Flexible substrate for ii-vi compound solar cells |
| US8541792B2 (en) * | 2010-10-15 | 2013-09-24 | Guardian Industries Corp. | Method of treating the surface of a soda lime silica glass substrate, surface-treated glass substrate, and device incorporating the same |
-
2010
- 2010-07-09 JP JP2012520589A patent/JP5878465B2/ja not_active Expired - Fee Related
- 2010-07-09 EP EP10800144.7A patent/EP2454755A4/en not_active Withdrawn
- 2010-07-09 WO PCT/US2010/001942 patent/WO2011008254A1/en not_active Ceased
- 2010-07-09 KR KR20127003690A patent/KR20120052310A/ko not_active Ceased
- 2010-07-09 IN IN356DEN2012 patent/IN2012DN00356A/en unknown
- 2010-07-09 CN CN201080037509.3A patent/CN102625953B/zh not_active Expired - Fee Related
- 2010-07-12 US US12/834,510 patent/US9153730B2/en not_active Expired - Fee Related
- 2010-07-12 TW TW099122819A patent/TWI545785B/zh not_active IP Right Cessation
-
2015
- 2015-09-03 US US14/844,689 patent/US20150380600A1/en not_active Abandoned
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