JP2012525695A5 - - Google Patents

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Publication number
JP2012525695A5
JP2012525695A5 JP2012507719A JP2012507719A JP2012525695A5 JP 2012525695 A5 JP2012525695 A5 JP 2012525695A5 JP 2012507719 A JP2012507719 A JP 2012507719A JP 2012507719 A JP2012507719 A JP 2012507719A JP 2012525695 A5 JP2012525695 A5 JP 2012525695A5
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JP
Japan
Prior art keywords
germanium
compound
silicon
formulation
substrate
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JP2012507719A
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English (en)
Japanese (ja)
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JP5717724B2 (ja
JP2012525695A (ja
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Priority claimed from DE200910002758 external-priority patent/DE102009002758A1/de
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Publication of JP2012525695A publication Critical patent/JP2012525695A/ja
Publication of JP2012525695A5 publication Critical patent/JP2012525695A5/ja
Application granted granted Critical
Publication of JP5717724B2 publication Critical patent/JP5717724B2/ja
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

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JP2012507719A 2009-04-30 2010-04-28 ゲルマニウムの添加による、液体シランからの太陽電池のバンドギャップ調整 Expired - Fee Related JP5717724B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
DE200910002758 DE102009002758A1 (de) 2009-04-30 2009-04-30 Bandgap Tailoring von Solarzellen aus Flüssigsilan mittels Germanium-Zugabe
DE102009002758.0 2009-04-30
PCT/EP2010/055665 WO2010125081A2 (de) 2009-04-30 2010-04-28 Bandgap tailoring von solarzellen aus flüssigsilan mittels germanium-zugabe

Publications (3)

Publication Number Publication Date
JP2012525695A JP2012525695A (ja) 2012-10-22
JP2012525695A5 true JP2012525695A5 (enExample) 2015-02-26
JP5717724B2 JP5717724B2 (ja) 2015-05-13

Family

ID=42932176

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2012507719A Expired - Fee Related JP5717724B2 (ja) 2009-04-30 2010-04-28 ゲルマニウムの添加による、液体シランからの太陽電池のバンドギャップ調整

Country Status (7)

Country Link
US (1) US8709858B2 (enExample)
EP (1) EP2425461A2 (enExample)
JP (1) JP5717724B2 (enExample)
KR (1) KR101687428B1 (enExample)
CN (1) CN102422441B (enExample)
DE (1) DE102009002758A1 (enExample)
WO (1) WO2010125081A2 (enExample)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP2135844A1 (de) * 2008-06-17 2009-12-23 Evonik Degussa GmbH Verfahren zur Herstellung höherer Hydridosilane
DE102008043422B3 (de) 2008-11-03 2010-01-07 Evonik Degussa Gmbh Verfahren zur Aufreinigung niedermolekularer Hydridosilane
DE102009048087A1 (de) 2009-10-02 2011-04-07 Evonik Degussa Gmbh Verfahren zur Herstellung höherer Hydridosilane
DE102009053818A1 (de) 2009-11-18 2011-05-19 Evonik Degussa Gmbh Dotierung von Siliciumschichten aus flüssigen Silanen für Elektronik- und Solar-Anwendungen
DE102009053806A1 (de) 2009-11-18 2011-05-19 Evonik Degussa Gmbh Verfahren zur Herstellung von Siliciumschichten
DE102009053805A1 (de) 2009-11-18 2011-05-26 Evonik Degussa Gmbh Siliziumschichten aus polymermodifizierten Flüssigsilan-Formulierungen
DE102009053804B3 (de) 2009-11-18 2011-03-17 Evonik Degussa Gmbh Verfahren zur Herstellung von Hydridosilanen
DE102010002405A1 (de) 2010-02-26 2011-09-01 Evonik Degussa Gmbh Verfahren zur Oligomerisierung von Hydridosilanen, die mit dem Verfahren herstellbaren Oligomerisate und ihre Verwendung
DE102010030696A1 (de) 2010-06-30 2012-01-05 Evonik Degussa Gmbh Modifizierung von Siliciumschichten aus Silan-haltigen Formulierungen
JP5929737B2 (ja) * 2012-12-18 2016-06-08 株式会社島津製作所 バンドギャップ算出装置及びバンドギャップ算出プログラム
DE102015225289A1 (de) 2015-12-15 2017-06-22 Evonik Degussa Gmbh Dotierte Zusammensetzungen, Verfahren zu ihrer Herstellung und ihre Verwendung
CN115188842A (zh) * 2022-06-21 2022-10-14 广州诺尔光电科技有限公司 一种Si衬底上Ge雪崩光电二极管及其制造方法

Family Cites Families (22)

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GB2077710B (en) 1980-06-11 1983-10-12 Nat Res Dev Synthesising a polysilane
JPH0582812A (ja) * 1991-09-25 1993-04-02 Matsushita Electric Ind Co Ltd 太陽電池
JP3517934B2 (ja) 1994-03-24 2004-04-12 昭和電工株式会社 シリコン膜の形成方法
US5866471A (en) * 1995-12-26 1999-02-02 Kabushiki Kaisha Toshiba Method of forming semiconductor thin film and method of fabricating solar cell
JPH09237927A (ja) 1995-12-26 1997-09-09 Toshiba Corp 半導体薄膜形成方法および太陽電池の製造方法
JPH1154773A (ja) * 1997-08-01 1999-02-26 Canon Inc 光起電力素子及びその製造方法
JP4866534B2 (ja) * 2001-02-12 2012-02-01 エーエスエム アメリカ インコーポレイテッド 半導体膜の改良された堆積方法
US6858196B2 (en) * 2001-07-19 2005-02-22 Asm America, Inc. Method and apparatus for chemical synthesis
KR100627203B1 (ko) 2001-08-14 2006-09-22 제이에스알 가부시끼가이샤 실란 조성물, 실리콘막의 형성법 및 태양 전지의 제조법
US7879696B2 (en) * 2003-07-08 2011-02-01 Kovio, Inc. Compositions and methods for forming a semiconducting and/or silicon-containing film, and structures formed therefrom
JP3869403B2 (ja) * 2003-09-30 2007-01-17 株式会社東芝 ホログラム記録媒体、その製造方法、およびホログラム記録方法
US7750232B2 (en) 2005-07-08 2010-07-06 Sumco Solar Corporation Multi-crystalline silicon-germanium bulk crystal for use as a solar cell and method of making
WO2007044429A2 (en) 2005-10-05 2007-04-19 Nanogram Corporation Linear and cross-linked high molecular weight polysilanes, polygermanes, and copolymers thereof, compositions containing the same, and methods of making and using such compounds and compositions
KR101467412B1 (ko) * 2006-10-06 2014-12-01 코비오 인코포레이티드 실리콘 폴리머, 실리콘 화합물 중합법 및 실리콘 폴리머 박막 형성법
US20080138966A1 (en) * 2006-11-15 2008-06-12 Rogojina Elena V Method of fabricating a densified nanoparticle thin film with a set of occluded pores
CN101237000A (zh) * 2007-01-29 2008-08-06 北京行者多媒体科技有限公司 基于薄膜硅的多结光伏器件的纳米晶硅和非晶锗混合型吸收层
US8530589B2 (en) * 2007-05-04 2013-09-10 Kovio, Inc. Print processing for patterned conductor, semiconductor and dielectric materials
EP2135844A1 (de) 2008-06-17 2009-12-23 Evonik Degussa GmbH Verfahren zur Herstellung höherer Hydridosilane
DE102008043422B3 (de) 2008-11-03 2010-01-07 Evonik Degussa Gmbh Verfahren zur Aufreinigung niedermolekularer Hydridosilane
DE102009053805A1 (de) 2009-11-18 2011-05-26 Evonik Degussa Gmbh Siliziumschichten aus polymermodifizierten Flüssigsilan-Formulierungen
DE102009053804B3 (de) 2009-11-18 2011-03-17 Evonik Degussa Gmbh Verfahren zur Herstellung von Hydridosilanen
DE102009053818A1 (de) 2009-11-18 2011-05-19 Evonik Degussa Gmbh Dotierung von Siliciumschichten aus flüssigen Silanen für Elektronik- und Solar-Anwendungen

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