CN102422441B - 通过添加锗定制由液态硅烷制备的太阳能电池的带隙 - Google Patents
通过添加锗定制由液态硅烷制备的太阳能电池的带隙 Download PDFInfo
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- CN102422441B CN102422441B CN201080018902.8A CN201080018902A CN102422441B CN 102422441 B CN102422441 B CN 102422441B CN 201080018902 A CN201080018902 A CN 201080018902A CN 102422441 B CN102422441 B CN 102422441B
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- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/02—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition
- C23C18/12—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition characterised by the deposition of inorganic material other than metallic material
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- C23C18/1295—Process of deposition of the inorganic material with after-treatment of the deposited inorganic material
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- C23C18/12—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition characterised by the deposition of inorganic material other than metallic material
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- H10F71/10—Manufacture or treatment of devices covered by this subclass the devices comprising amorphous semiconductor material
- H10F71/103—Manufacture or treatment of devices covered by this subclass the devices comprising amorphous semiconductor material including only Group IV materials
- H10F71/1035—Manufacture or treatment of devices covered by this subclass the devices comprising amorphous semiconductor material including only Group IV materials having multiple Group IV elements, e.g. SiGe or SiC
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-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/31504—Composite [nonstructural laminate]
- Y10T428/31652—Of asbestos
- Y10T428/31663—As siloxane, silicone or silane
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- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- General Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Mechanical Engineering (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Thermal Sciences (AREA)
- Inorganic Chemistry (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Toxicology (AREA)
- Health & Medical Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
- Photovoltaic Devices (AREA)
- Chemically Coating (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE200910002758 DE102009002758A1 (de) | 2009-04-30 | 2009-04-30 | Bandgap Tailoring von Solarzellen aus Flüssigsilan mittels Germanium-Zugabe |
| DE102009002758.0 | 2009-04-30 | ||
| PCT/EP2010/055665 WO2010125081A2 (de) | 2009-04-30 | 2010-04-28 | Bandgap tailoring von solarzellen aus flüssigsilan mittels germanium-zugabe |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN102422441A CN102422441A (zh) | 2012-04-18 |
| CN102422441B true CN102422441B (zh) | 2015-08-26 |
Family
ID=42932176
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201080018902.8A Expired - Fee Related CN102422441B (zh) | 2009-04-30 | 2010-04-28 | 通过添加锗定制由液态硅烷制备的太阳能电池的带隙 |
Country Status (7)
| Country | Link |
|---|---|
| US (1) | US8709858B2 (enExample) |
| EP (1) | EP2425461A2 (enExample) |
| JP (1) | JP5717724B2 (enExample) |
| KR (1) | KR101687428B1 (enExample) |
| CN (1) | CN102422441B (enExample) |
| DE (1) | DE102009002758A1 (enExample) |
| WO (1) | WO2010125081A2 (enExample) |
Families Citing this family (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP2135844A1 (de) * | 2008-06-17 | 2009-12-23 | Evonik Degussa GmbH | Verfahren zur Herstellung höherer Hydridosilane |
| DE102008043422B3 (de) | 2008-11-03 | 2010-01-07 | Evonik Degussa Gmbh | Verfahren zur Aufreinigung niedermolekularer Hydridosilane |
| DE102009048087A1 (de) | 2009-10-02 | 2011-04-07 | Evonik Degussa Gmbh | Verfahren zur Herstellung höherer Hydridosilane |
| DE102009053818A1 (de) | 2009-11-18 | 2011-05-19 | Evonik Degussa Gmbh | Dotierung von Siliciumschichten aus flüssigen Silanen für Elektronik- und Solar-Anwendungen |
| DE102009053806A1 (de) | 2009-11-18 | 2011-05-19 | Evonik Degussa Gmbh | Verfahren zur Herstellung von Siliciumschichten |
| DE102009053805A1 (de) | 2009-11-18 | 2011-05-26 | Evonik Degussa Gmbh | Siliziumschichten aus polymermodifizierten Flüssigsilan-Formulierungen |
| DE102009053804B3 (de) | 2009-11-18 | 2011-03-17 | Evonik Degussa Gmbh | Verfahren zur Herstellung von Hydridosilanen |
| DE102010002405A1 (de) | 2010-02-26 | 2011-09-01 | Evonik Degussa Gmbh | Verfahren zur Oligomerisierung von Hydridosilanen, die mit dem Verfahren herstellbaren Oligomerisate und ihre Verwendung |
| DE102010030696A1 (de) | 2010-06-30 | 2012-01-05 | Evonik Degussa Gmbh | Modifizierung von Siliciumschichten aus Silan-haltigen Formulierungen |
| JP5929737B2 (ja) * | 2012-12-18 | 2016-06-08 | 株式会社島津製作所 | バンドギャップ算出装置及びバンドギャップ算出プログラム |
| DE102015225289A1 (de) | 2015-12-15 | 2017-06-22 | Evonik Degussa Gmbh | Dotierte Zusammensetzungen, Verfahren zu ihrer Herstellung und ihre Verwendung |
| CN115188842A (zh) * | 2022-06-21 | 2022-10-14 | 广州诺尔光电科技有限公司 | 一种Si衬底上Ge雪崩光电二极管及其制造方法 |
Family Cites Families (22)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB2077710B (en) | 1980-06-11 | 1983-10-12 | Nat Res Dev | Synthesising a polysilane |
| JPH0582812A (ja) * | 1991-09-25 | 1993-04-02 | Matsushita Electric Ind Co Ltd | 太陽電池 |
| JP3517934B2 (ja) | 1994-03-24 | 2004-04-12 | 昭和電工株式会社 | シリコン膜の形成方法 |
| US5866471A (en) * | 1995-12-26 | 1999-02-02 | Kabushiki Kaisha Toshiba | Method of forming semiconductor thin film and method of fabricating solar cell |
| JPH09237927A (ja) | 1995-12-26 | 1997-09-09 | Toshiba Corp | 半導体薄膜形成方法および太陽電池の製造方法 |
| JPH1154773A (ja) * | 1997-08-01 | 1999-02-26 | Canon Inc | 光起電力素子及びその製造方法 |
| JP4866534B2 (ja) * | 2001-02-12 | 2012-02-01 | エーエスエム アメリカ インコーポレイテッド | 半導体膜の改良された堆積方法 |
| US6858196B2 (en) * | 2001-07-19 | 2005-02-22 | Asm America, Inc. | Method and apparatus for chemical synthesis |
| KR100627203B1 (ko) | 2001-08-14 | 2006-09-22 | 제이에스알 가부시끼가이샤 | 실란 조성물, 실리콘막의 형성법 및 태양 전지의 제조법 |
| US7879696B2 (en) * | 2003-07-08 | 2011-02-01 | Kovio, Inc. | Compositions and methods for forming a semiconducting and/or silicon-containing film, and structures formed therefrom |
| JP3869403B2 (ja) * | 2003-09-30 | 2007-01-17 | 株式会社東芝 | ホログラム記録媒体、その製造方法、およびホログラム記録方法 |
| US7750232B2 (en) | 2005-07-08 | 2010-07-06 | Sumco Solar Corporation | Multi-crystalline silicon-germanium bulk crystal for use as a solar cell and method of making |
| WO2007044429A2 (en) | 2005-10-05 | 2007-04-19 | Nanogram Corporation | Linear and cross-linked high molecular weight polysilanes, polygermanes, and copolymers thereof, compositions containing the same, and methods of making and using such compounds and compositions |
| KR101467412B1 (ko) * | 2006-10-06 | 2014-12-01 | 코비오 인코포레이티드 | 실리콘 폴리머, 실리콘 화합물 중합법 및 실리콘 폴리머 박막 형성법 |
| US20080138966A1 (en) * | 2006-11-15 | 2008-06-12 | Rogojina Elena V | Method of fabricating a densified nanoparticle thin film with a set of occluded pores |
| CN101237000A (zh) * | 2007-01-29 | 2008-08-06 | 北京行者多媒体科技有限公司 | 基于薄膜硅的多结光伏器件的纳米晶硅和非晶锗混合型吸收层 |
| US8530589B2 (en) * | 2007-05-04 | 2013-09-10 | Kovio, Inc. | Print processing for patterned conductor, semiconductor and dielectric materials |
| EP2135844A1 (de) | 2008-06-17 | 2009-12-23 | Evonik Degussa GmbH | Verfahren zur Herstellung höherer Hydridosilane |
| DE102008043422B3 (de) | 2008-11-03 | 2010-01-07 | Evonik Degussa Gmbh | Verfahren zur Aufreinigung niedermolekularer Hydridosilane |
| DE102009053805A1 (de) | 2009-11-18 | 2011-05-26 | Evonik Degussa Gmbh | Siliziumschichten aus polymermodifizierten Flüssigsilan-Formulierungen |
| DE102009053804B3 (de) | 2009-11-18 | 2011-03-17 | Evonik Degussa Gmbh | Verfahren zur Herstellung von Hydridosilanen |
| DE102009053818A1 (de) | 2009-11-18 | 2011-05-19 | Evonik Degussa Gmbh | Dotierung von Siliciumschichten aus flüssigen Silanen für Elektronik- und Solar-Anwendungen |
-
2009
- 2009-04-30 DE DE200910002758 patent/DE102009002758A1/de not_active Withdrawn
-
2010
- 2010-04-28 JP JP2012507719A patent/JP5717724B2/ja not_active Expired - Fee Related
- 2010-04-28 US US13/265,417 patent/US8709858B2/en not_active Expired - Fee Related
- 2010-04-28 CN CN201080018902.8A patent/CN102422441B/zh not_active Expired - Fee Related
- 2010-04-28 EP EP10715550A patent/EP2425461A2/de not_active Withdrawn
- 2010-04-28 WO PCT/EP2010/055665 patent/WO2010125081A2/de not_active Ceased
- 2010-04-28 KR KR1020117025599A patent/KR101687428B1/ko not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| KR101687428B1 (ko) | 2016-12-19 |
| JP5717724B2 (ja) | 2015-05-13 |
| EP2425461A2 (de) | 2012-03-07 |
| US8709858B2 (en) | 2014-04-29 |
| JP2012525695A (ja) | 2012-10-22 |
| KR20120018128A (ko) | 2012-02-29 |
| DE102009002758A1 (de) | 2010-11-11 |
| WO2010125081A2 (de) | 2010-11-04 |
| WO2010125081A3 (de) | 2011-09-15 |
| CN102422441A (zh) | 2012-04-18 |
| US20120042951A1 (en) | 2012-02-23 |
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