JP2012522898A5 - - Google Patents
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- Publication number
- JP2012522898A5 JP2012522898A5 JP2012503962A JP2012503962A JP2012522898A5 JP 2012522898 A5 JP2012522898 A5 JP 2012522898A5 JP 2012503962 A JP2012503962 A JP 2012503962A JP 2012503962 A JP2012503962 A JP 2012503962A JP 2012522898 A5 JP2012522898 A5 JP 2012522898A5
- Authority
- JP
- Japan
- Prior art keywords
- composition according
- alkylene
- substrate
- inhibitor
- composition
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000000203 mixture Substances 0.000 claims 15
- 125000002947 alkylene group Chemical group 0.000 claims 7
- 239000000758 substrate Substances 0.000 claims 6
- 239000002184 metal Substances 0.000 claims 5
- 229910052751 metal Inorganic materials 0.000 claims 5
- IAYPIBMASNFSPL-UHFFFAOYSA-N Ethylene oxide Chemical compound C1CO1 IAYPIBMASNFSPL-UHFFFAOYSA-N 0.000 claims 4
- -1 amine compound Chemical class 0.000 claims 4
- 239000003112 inhibitor Substances 0.000 claims 4
- 230000007246 mechanism Effects 0.000 claims 4
- 229920001577 copolymer Polymers 0.000 claims 3
- 238000000034 method Methods 0.000 claims 3
- 239000003795 chemical substances by application Substances 0.000 claims 2
- 150000001875 compounds Chemical class 0.000 claims 2
- 238000000151 deposition Methods 0.000 claims 2
- 229910021645 metal ion Inorganic materials 0.000 claims 2
- 238000007747 plating Methods 0.000 claims 2
- 125000002924 primary amino group Chemical group [H]N([H])* 0.000 claims 2
- 125000003161 (C1-C6) alkylene group Chemical group 0.000 claims 1
- VILCJCGEZXAXTO-UHFFFAOYSA-N 2,2,2-tetramine Chemical compound NCCNCCNCCN VILCJCGEZXAXTO-UHFFFAOYSA-N 0.000 claims 1
- RXFCIXRFAJRBSG-UHFFFAOYSA-N 3,2,3-tetramine Chemical compound NCCCNCCNCCCN RXFCIXRFAJRBSG-UHFFFAOYSA-N 0.000 claims 1
- JPVYNHNXODAKFH-UHFFFAOYSA-N Cu2+ Chemical compound [Cu+2] JPVYNHNXODAKFH-UHFFFAOYSA-N 0.000 claims 1
- RPNUMPOLZDHAAY-UHFFFAOYSA-N Diethylenetriamine Chemical compound NCCNCCN RPNUMPOLZDHAAY-UHFFFAOYSA-N 0.000 claims 1
- PIICEJLVQHRZGT-UHFFFAOYSA-N Ethylenediamine Chemical compound NCCN PIICEJLVQHRZGT-UHFFFAOYSA-N 0.000 claims 1
- GOOHAUXETOMSMM-UHFFFAOYSA-N Propylene oxide Chemical group CC1CO1 GOOHAUXETOMSMM-UHFFFAOYSA-N 0.000 claims 1
- 150000001412 amines Chemical class 0.000 claims 1
- 125000003277 amino group Chemical group 0.000 claims 1
- OTBHHUPVCYLGQO-UHFFFAOYSA-N bis(3-aminopropyl)amine Chemical compound NCCCNCCCN OTBHHUPVCYLGQO-UHFFFAOYSA-N 0.000 claims 1
- 229910001431 copper ion Inorganic materials 0.000 claims 1
- 230000008021 deposition Effects 0.000 claims 1
- 125000000524 functional group Chemical group 0.000 claims 1
- 238000009499 grossing Methods 0.000 claims 1
- 230000002401 inhibitory effect Effects 0.000 claims 1
- KMBPCQSCMCEPMU-UHFFFAOYSA-N n'-(3-aminopropyl)-n'-methylpropane-1,3-diamine Chemical compound NCCCN(C)CCCN KMBPCQSCMCEPMU-UHFFFAOYSA-N 0.000 claims 1
- SCHTXWZFMCQMBH-UHFFFAOYSA-N pentane-1,3,5-triamine Chemical compound NCCC(N)CCN SCHTXWZFMCQMBH-UHFFFAOYSA-N 0.000 claims 1
- 229920000642 polymer Polymers 0.000 claims 1
- 125000006850 spacer group Chemical group 0.000 claims 1
Applications Claiming Priority (5)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| EP09157542 | 2009-04-07 | ||
| EP09157542.3 | 2009-04-07 | ||
| US25632909P | 2009-10-30 | 2009-10-30 | |
| US61/256,329 | 2009-10-30 | ||
| PCT/EP2010/054108 WO2010115756A1 (en) | 2009-04-07 | 2010-03-29 | Composition for metal plating comprising suppressing agent for void free submicron feature filling |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2012522898A JP2012522898A (ja) | 2012-09-27 |
| JP2012522898A5 true JP2012522898A5 (https=) | 2013-05-09 |
| JP5702360B2 JP5702360B2 (ja) | 2015-04-15 |
Family
ID=42935667
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2012503962A Active JP5702360B2 (ja) | 2009-04-07 | 2010-03-29 | ボイドのないサブミクロンの機構を充填するための、抑制剤を含む金属メッキ用の組成物 |
Country Status (11)
| Country | Link |
|---|---|
| US (1) | US20120027948A1 (https=) |
| EP (1) | EP2417284B1 (https=) |
| JP (1) | JP5702360B2 (https=) |
| KR (2) | KR20120005023A (https=) |
| CN (2) | CN104195602B (https=) |
| IL (1) | IL215017A (https=) |
| MY (1) | MY157214A (https=) |
| RU (1) | RU2542178C2 (https=) |
| SG (2) | SG174265A1 (https=) |
| TW (1) | TWI489012B (https=) |
| WO (1) | WO2010115756A1 (https=) |
Families Citing this family (28)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI400365B (zh) | 2004-11-12 | 2013-07-01 | 安頌股份有限公司 | 微電子裝置上的銅電沈積 |
| SG10201404394QA (en) | 2009-07-30 | 2014-10-30 | Basf Se | Composition for metal plating comprising suppressing agent for void free submicron feature filing |
| EP2547731B1 (en) | 2010-03-18 | 2014-07-30 | Basf Se | Composition for metal electroplating comprising leveling agent |
| EP2468927A1 (en) | 2010-12-21 | 2012-06-27 | Basf Se | Composition for metal electroplating comprising leveling agent |
| EP2655457B1 (en) * | 2010-12-21 | 2019-04-10 | Basf Se | Composition for metal electroplating comprising leveling agent |
| CN103547631B (zh) | 2011-06-01 | 2016-07-06 | 巴斯夫欧洲公司 | 包含用于自下向上填充硅穿孔和互联件特征的添加剂的金属电镀用组合物 |
| EP2530102A1 (en) | 2011-06-01 | 2012-12-05 | Basf Se | Additive and composition for metal electroplating comprising an additive for bottom-up filling of though silicon vias |
| US9243339B2 (en) * | 2012-05-25 | 2016-01-26 | Trevor Pearson | Additives for producing copper electrodeposits having low oxygen content |
| RU2015121797A (ru) | 2012-11-09 | 2017-01-10 | Басф Се | Композиция для электролитического осаждения металла, содержащая выравнивающий агент |
| KR102159604B1 (ko) * | 2012-11-21 | 2020-09-25 | 쓰리엠 이노베이티브 프로퍼티즈 컴파니 | 광학 확산 필름 및 이를 제조하는 방법 |
| JP6216522B2 (ja) * | 2013-03-14 | 2017-10-18 | 大日本印刷株式会社 | インターポーザー基板の製造方法。 |
| JP6457881B2 (ja) * | 2015-04-22 | 2019-01-23 | 新光電気工業株式会社 | 配線基板及びその製造方法 |
| JP7039601B2 (ja) * | 2016-09-22 | 2022-03-22 | マクダーミッド エンソン インコーポレイテッド | マイクロエレクトロニクスにおける銅電着 |
| WO2018073011A1 (en) | 2016-10-20 | 2018-04-26 | Basf Se | Composition for metal plating comprising suppressing agent for void free submicron feature filling |
| US11926918B2 (en) * | 2016-12-20 | 2024-03-12 | Basf Se | Composition for metal plating comprising suppressing agent for void free filing |
| EP3415664B1 (en) * | 2017-06-16 | 2019-09-18 | ATOTECH Deutschland GmbH | Aqueous acidic copper electroplating bath and method for electrolytically depositing of a copper coating |
| US11387108B2 (en) | 2017-09-04 | 2022-07-12 | Basf Se | Composition for metal electroplating comprising leveling agent |
| EP3781729B1 (en) * | 2018-04-20 | 2024-09-25 | Basf Se | Composition for tin or tin alloy electroplating comprising suppressing agent |
| EP4034696A1 (en) | 2019-09-27 | 2022-08-03 | Basf Se | Composition for copper bump electrodeposition comprising a leveling agent |
| CN114450438A (zh) | 2019-09-27 | 2022-05-06 | 巴斯夫欧洲公司 | 用于铜凸块电沉积的包含流平剂的组合物 |
| CN114073170B (zh) * | 2020-04-01 | 2025-01-03 | 住友电气工业株式会社 | 柔性印刷布线板及其制造方法 |
| JP2023520530A (ja) | 2020-04-03 | 2023-05-17 | ビーエーエスエフ ソシエタス・ヨーロピア | ポリアミノアミド型レベリング剤を含む銅バンプ電着用組成物 |
| EP3922662A1 (en) | 2020-06-10 | 2021-12-15 | Basf Se | Polyalkanolamine |
| KR20240070557A (ko) | 2021-10-01 | 2024-05-21 | 바스프 에스이 | 폴리아미노아미드 타입 레벨링제를 포함하는 구리 전착용 조성물 |
| TWI861453B (zh) | 2021-12-21 | 2024-11-11 | 隆輝實業股份有限公司 | 環保無廢料的發泡鞋材製程方法，及其鞋材半成品與鞋體成品 |
| US20250388725A1 (en) | 2022-07-07 | 2025-12-25 | Basf Se | Use of a composition comprising a polyaminoamide type compound for copper nanotwin electrodeposition |
| US12557666B2 (en) * | 2022-11-28 | 2026-02-17 | Taiwan Semiconductor Manufacturing Company, Ltd. | Method of manufacturing conductive structure, method of manufacturing redistribution circuit structure and method of manufacturing semiconductor package |
| WO2024132828A1 (en) | 2022-12-19 | 2024-06-27 | Basf Se | A composition for copper nanotwin electrodeposition |
Family Cites Families (24)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4139425A (en) * | 1978-04-05 | 1979-02-13 | R. O. Hull & Company, Inc. | Composition, plating bath, and method for electroplating tin and/or lead |
| US4505839A (en) | 1981-05-18 | 1985-03-19 | Petrolite Corporation | Polyalkanolamines |
| US4347108A (en) | 1981-05-29 | 1982-08-31 | Rohco, Inc. | Electrodeposition of copper, acidic copper electroplating baths and additives therefor |
| US5051154A (en) | 1988-08-23 | 1991-09-24 | Shipley Company Inc. | Additive for acid-copper electroplating baths to increase throwing power |
| DE4003243A1 (de) | 1990-02-03 | 1991-08-08 | Basf Ag | Verwendung von trialkanolaminpolyethern als demulgatoren von oel-in-wasser-emulsionen |
| DE19622221A1 (de) * | 1996-06-03 | 1997-12-04 | Henkel Kgaa | Verfahren zur Beschichtung elektrisch leitfähiger Substrate |
| US6444110B2 (en) * | 1999-05-17 | 2002-09-03 | Shipley Company, L.L.C. | Electrolytic copper plating method |
| US20040045832A1 (en) * | 1999-10-14 | 2004-03-11 | Nicholas Martyak | Electrolytic copper plating solutions |
| JP3610434B2 (ja) * | 2002-02-06 | 2005-01-12 | 第一工業製薬株式会社 | 非イオン界面活性剤 |
| JP2003328179A (ja) * | 2002-05-10 | 2003-11-19 | Ebara Udylite Kk | 酸性銅めっき浴用添加剤及び該添加剤を含有する酸性銅めっき浴並びに該めっき浴を用いるめっき方法 |
| CN1190521C (zh) * | 2002-07-05 | 2005-02-23 | 旺宏电子股份有限公司 | 铜电镀溶液及铜电镀方法 |
| RU2237755C2 (ru) * | 2002-07-25 | 2004-10-10 | Калининградский государственный университет | Электролит меднения стальных деталей |
| US6833479B2 (en) | 2002-08-16 | 2004-12-21 | Cognis Corporation | Antimisting agents |
| JP3804788B2 (ja) * | 2002-11-18 | 2006-08-02 | 荏原ユージライト株式会社 | クローズド酸性銅めっきシステムおよびこれに利用される耐温性酸性銅めっき浴 |
| US7147767B2 (en) * | 2002-12-16 | 2006-12-12 | 3M Innovative Properties Company | Plating solutions for electrochemical or chemical deposition of copper interconnects and methods therefor |
| US20050072683A1 (en) | 2003-04-03 | 2005-04-07 | Ebara Corporation | Copper plating bath and plating method |
| US20050045485A1 (en) | 2003-09-03 | 2005-03-03 | Taiwan Semiconductor Manufacturing Co. Ltd. | Method to improve copper electrochemical deposition |
| TWI400365B (zh) | 2004-11-12 | 2013-07-01 | 安頌股份有限公司 | 微電子裝置上的銅電沈積 |
| US20060213780A1 (en) * | 2005-03-24 | 2006-09-28 | Taiwan Semiconductor Manufacturing Co., Ltd. | Electroplating composition and method |
| RU2334831C2 (ru) * | 2006-10-31 | 2008-09-27 | Федеральное государственное унитарное предприятие "Калужский научно-исследовательский институт телемеханических устройств" | Электролит меднения |
| EP1978051B1 (en) * | 2007-04-03 | 2012-02-22 | Rohm and Haas Electronic Materials, L.L.C. | Metal plating compositions and methods |
| CU23716A1 (es) * | 2008-09-30 | 2011-10-05 | Ct Ingenieria Genetica Biotech | Péptido antagonista de la actividad de la interleucina-15 |
| US8388824B2 (en) * | 2008-11-26 | 2013-03-05 | Enthone Inc. | Method and composition for electrodeposition of copper in microelectronics with dipyridyl-based levelers |
| WO2010115796A1 (en) * | 2009-04-07 | 2010-10-14 | Basf Se | Composition for metal plating comprising suppressing agent for void free submicron feature filling |
-
2010
- 2010-03-29 CN CN201410322845.2A patent/CN104195602B/zh active Active
- 2010-03-29 KR KR1020117026527A patent/KR20120005023A/ko not_active Ceased
- 2010-03-29 KR KR1020177007866A patent/KR20170034948A/ko not_active Ceased
- 2010-03-29 JP JP2012503962A patent/JP5702360B2/ja active Active
- 2010-03-29 US US13/259,482 patent/US20120027948A1/en not_active Abandoned
- 2010-03-29 EP EP10711239.3A patent/EP2417284B1/en active Active
- 2010-03-29 SG SG2011064094A patent/SG174265A1/en unknown
- 2010-03-29 MY MYPI2011004270A patent/MY157214A/en unknown
- 2010-03-29 WO PCT/EP2010/054108 patent/WO2010115756A1/en not_active Ceased
- 2010-03-29 SG SG10201401324YA patent/SG10201401324YA/en unknown
- 2010-03-29 RU RU2011144618/02A patent/RU2542178C2/ru not_active IP Right Cessation
- 2010-03-29 CN CN201080015460.1A patent/CN102369315B/zh active Active
- 2010-04-06 TW TW099110629A patent/TWI489012B/zh active
-
2011
- 2011-09-07 IL IL215017A patent/IL215017A/en active IP Right Grant
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