JP2012522898A - ボイドのないサブミクロンの機構を充填するための、抑制剤を含む金属メッキ用の組成物 - Google Patents
ボイドのないサブミクロンの機構を充填するための、抑制剤を含む金属メッキ用の組成物 Download PDFInfo
- Publication number
- JP2012522898A JP2012522898A JP2012503962A JP2012503962A JP2012522898A JP 2012522898 A JP2012522898 A JP 2012522898A JP 2012503962 A JP2012503962 A JP 2012503962A JP 2012503962 A JP2012503962 A JP 2012503962A JP 2012522898 A JP2012522898 A JP 2012522898A
- Authority
- JP
- Japan
- Prior art keywords
- copper
- composition according
- inhibitor
- substrate
- metal
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000003112 inhibitor Substances 0.000 title claims abstract description 63
- 239000000203 mixture Substances 0.000 title claims abstract description 59
- 238000007747 plating Methods 0.000 title claims description 49
- 229910052751 metal Inorganic materials 0.000 title claims description 44
- 239000002184 metal Substances 0.000 title claims description 44
- IAYPIBMASNFSPL-UHFFFAOYSA-N Ethylene oxide Chemical compound C1CO1 IAYPIBMASNFSPL-UHFFFAOYSA-N 0.000 claims abstract description 60
- -1 amine compound Chemical class 0.000 claims abstract description 52
- 125000002947 alkylene group Chemical group 0.000 claims abstract description 24
- 150000001875 compounds Chemical class 0.000 claims abstract description 18
- 229910021645 metal ion Inorganic materials 0.000 claims abstract description 16
- 125000002924 primary amino group Chemical group [H]N([H])* 0.000 claims abstract description 13
- 239000000758 substrate Substances 0.000 claims description 44
- GOOHAUXETOMSMM-UHFFFAOYSA-N Propylene oxide Chemical group CC1CO1 GOOHAUXETOMSMM-UHFFFAOYSA-N 0.000 claims description 36
- 150000001412 amines Chemical class 0.000 claims description 30
- 230000007246 mechanism Effects 0.000 claims description 22
- 229920001577 copolymer Polymers 0.000 claims description 20
- 239000003795 chemical substances by application Substances 0.000 claims description 17
- 238000000151 deposition Methods 0.000 claims description 16
- 238000000034 method Methods 0.000 claims description 14
- 230000008021 deposition Effects 0.000 claims description 13
- 125000000524 functional group Chemical group 0.000 claims description 12
- PIICEJLVQHRZGT-UHFFFAOYSA-N Ethylenediamine Chemical compound NCCN PIICEJLVQHRZGT-UHFFFAOYSA-N 0.000 claims description 10
- RPNUMPOLZDHAAY-UHFFFAOYSA-N Diethylenetriamine Chemical compound NCCNCCN RPNUMPOLZDHAAY-UHFFFAOYSA-N 0.000 claims description 8
- 125000003277 amino group Chemical group 0.000 claims description 8
- VILCJCGEZXAXTO-UHFFFAOYSA-N 2,2,2-tetramine Chemical compound NCCNCCNCCN VILCJCGEZXAXTO-UHFFFAOYSA-N 0.000 claims description 3
- 230000002401 inhibitory effect Effects 0.000 claims description 3
- 229920000642 polymer Polymers 0.000 claims description 3
- 125000006850 spacer group Chemical group 0.000 claims description 3
- 125000003161 (C1-C6) alkylene group Chemical group 0.000 claims description 2
- RXFCIXRFAJRBSG-UHFFFAOYSA-N 3,2,3-tetramine Chemical compound NCCCNCCNCCCN RXFCIXRFAJRBSG-UHFFFAOYSA-N 0.000 claims description 2
- OTBHHUPVCYLGQO-UHFFFAOYSA-N bis(3-aminopropyl)amine Chemical compound NCCCNCCCN OTBHHUPVCYLGQO-UHFFFAOYSA-N 0.000 claims description 2
- SCHTXWZFMCQMBH-UHFFFAOYSA-N pentane-1,3,5-triamine Chemical compound NCCC(N)CCN SCHTXWZFMCQMBH-UHFFFAOYSA-N 0.000 claims description 2
- JPVYNHNXODAKFH-UHFFFAOYSA-N Cu2+ Chemical compound [Cu+2] JPVYNHNXODAKFH-UHFFFAOYSA-N 0.000 claims 1
- 229910001431 copper ion Inorganic materials 0.000 claims 1
- KMBPCQSCMCEPMU-UHFFFAOYSA-N n'-(3-aminopropyl)-n'-methylpropane-1,3-diamine Chemical compound NCCCN(C)CCCN KMBPCQSCMCEPMU-UHFFFAOYSA-N 0.000 claims 1
- 239000010949 copper Substances 0.000 description 100
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 94
- 229910052802 copper Inorganic materials 0.000 description 94
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical group N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 52
- 238000009713 electroplating Methods 0.000 description 32
- 239000010410 layer Substances 0.000 description 30
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 description 28
- 229910052757 nitrogen Inorganic materials 0.000 description 28
- 235000012431 wafers Nutrition 0.000 description 25
- 239000000654 additive Substances 0.000 description 22
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 21
- 238000011049 filling Methods 0.000 description 20
- 239000000463 material Substances 0.000 description 14
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 12
- 125000003118 aryl group Chemical group 0.000 description 12
- 239000002585 base Substances 0.000 description 12
- 239000013067 intermediate product Substances 0.000 description 12
- 238000006243 chemical reaction Methods 0.000 description 11
- 238000001878 scanning electron micrograph Methods 0.000 description 11
- 238000006386 neutralization reaction Methods 0.000 description 10
- 239000004065 semiconductor Substances 0.000 description 10
- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 description 9
- WYURNTSHIVDZCO-UHFFFAOYSA-N Tetrahydrofuran Chemical compound C1CCOC1 WYURNTSHIVDZCO-UHFFFAOYSA-N 0.000 description 9
- 125000004432 carbon atom Chemical group C* 0.000 description 9
- 239000003792 electrolyte Substances 0.000 description 9
- 238000009499 grossing Methods 0.000 description 9
- 125000002887 hydroxy group Chemical group [H]O* 0.000 description 9
- 238000004519 manufacturing process Methods 0.000 description 9
- 230000000996 additive effect Effects 0.000 description 8
- 239000011541 reaction mixture Substances 0.000 description 8
- 229910052717 sulfur Inorganic materials 0.000 description 8
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical class Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 7
- 230000000694 effects Effects 0.000 description 7
- 150000003839 salts Chemical class 0.000 description 7
- VEXZGXHMUGYJMC-UHFFFAOYSA-M Chloride anion Chemical compound [Cl-] VEXZGXHMUGYJMC-UHFFFAOYSA-M 0.000 description 6
- AFVFQIVMOAPDHO-UHFFFAOYSA-N Methanesulfonic acid Chemical compound CS(O)(=O)=O AFVFQIVMOAPDHO-UHFFFAOYSA-N 0.000 description 6
- NINIDFKCEFEMDL-UHFFFAOYSA-N Sulfur Chemical group [S] NINIDFKCEFEMDL-UHFFFAOYSA-N 0.000 description 6
- 239000002253 acid Substances 0.000 description 6
- 239000001257 hydrogen Substances 0.000 description 6
- 229910052739 hydrogen Inorganic materials 0.000 description 6
- 239000002904 solvent Substances 0.000 description 6
- 239000011593 sulfur Substances 0.000 description 6
- GSEJCLTVZPLZKY-UHFFFAOYSA-N Triethanolamine Chemical compound OCCN(CCO)CCO GSEJCLTVZPLZKY-UHFFFAOYSA-N 0.000 description 5
- 125000000217 alkyl group Chemical group 0.000 description 5
- 230000015572 biosynthetic process Effects 0.000 description 5
- 229910000365 copper sulfate Inorganic materials 0.000 description 5
- ARUVKPQLZAKDPS-UHFFFAOYSA-L copper(II) sulfate Chemical compound [Cu+2].[O-][S+2]([O-])([O-])[O-] ARUVKPQLZAKDPS-UHFFFAOYSA-L 0.000 description 5
- 239000007788 liquid Substances 0.000 description 5
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 4
- 239000002202 Polyethylene glycol Substances 0.000 description 4
- 125000004435 hydrogen atom Chemical group [H]* 0.000 description 4
- 238000007689 inspection Methods 0.000 description 4
- 229920000233 poly(alkylene oxides) Polymers 0.000 description 4
- 229920001223 polyethylene glycol Polymers 0.000 description 4
- 239000004094 surface-active agent Substances 0.000 description 4
- 238000003786 synthesis reaction Methods 0.000 description 4
- 229920005682 EO-PO block copolymer Polymers 0.000 description 3
- OKKJLVBELUTLKV-UHFFFAOYSA-N Methanol Chemical compound OC OKKJLVBELUTLKV-UHFFFAOYSA-N 0.000 description 3
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 description 3
- 229920002359 Tetronic® Polymers 0.000 description 3
- 125000001931 aliphatic group Chemical group 0.000 description 3
- 239000007795 chemical reaction product Substances 0.000 description 3
- 125000004122 cyclic group Chemical group 0.000 description 3
- 230000007547 defect Effects 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 150000004985 diamines Chemical class 0.000 description 3
- RAXXELZNTBOGNW-UHFFFAOYSA-N imidazole Natural products C1=CNC=N1 RAXXELZNTBOGNW-UHFFFAOYSA-N 0.000 description 3
- 239000012528 membrane Substances 0.000 description 3
- 229940098779 methanesulfonic acid Drugs 0.000 description 3
- 125000001624 naphthyl group Chemical group 0.000 description 3
- 229910052760 oxygen Inorganic materials 0.000 description 3
- 125000001997 phenyl group Chemical group [H]C1=C([H])C([H])=C(*)C([H])=C1[H] 0.000 description 3
- 229920001515 polyalkylene glycol Polymers 0.000 description 3
- 238000006068 polycondensation reaction Methods 0.000 description 3
- 238000000746 purification Methods 0.000 description 3
- 125000000467 secondary amino group Chemical group [H]N([*:1])[*:2] 0.000 description 3
- 159000000000 sodium salts Chemical class 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- 230000001629 suppression Effects 0.000 description 3
- 239000011800 void material Substances 0.000 description 3
- 125000004400 (C1-C12) alkyl group Chemical group 0.000 description 2
- 125000004169 (C1-C6) alkyl group Chemical group 0.000 description 2
- 125000006710 (C2-C12) alkenyl group Chemical group 0.000 description 2
- 125000006736 (C6-C20) aryl group Chemical group 0.000 description 2
- PAYRUJLWNCNPSJ-UHFFFAOYSA-N Aniline Chemical compound NC1=CC=CC=C1 PAYRUJLWNCNPSJ-UHFFFAOYSA-N 0.000 description 2
- BRLQWZUYTZBJKN-UHFFFAOYSA-N Epichlorohydrin Chemical compound ClCC1CO1 BRLQWZUYTZBJKN-UHFFFAOYSA-N 0.000 description 2
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 2
- VGGSQFUCUMXWEO-UHFFFAOYSA-N Ethene Chemical compound C=C VGGSQFUCUMXWEO-UHFFFAOYSA-N 0.000 description 2
- QUSNBJAOOMFDIB-UHFFFAOYSA-N Ethylamine Chemical compound CCN QUSNBJAOOMFDIB-UHFFFAOYSA-N 0.000 description 2
- 239000005977 Ethylene Substances 0.000 description 2
- LYCAIKOWRPUZTN-UHFFFAOYSA-N Ethylene glycol Chemical compound OCCO LYCAIKOWRPUZTN-UHFFFAOYSA-N 0.000 description 2
- PEDCQBHIVMGVHV-UHFFFAOYSA-N Glycerine Chemical compound OCC(O)CO PEDCQBHIVMGVHV-UHFFFAOYSA-N 0.000 description 2
- BAVYZALUXZFZLV-UHFFFAOYSA-N Methylamine Chemical compound NC BAVYZALUXZFZLV-UHFFFAOYSA-N 0.000 description 2
- LRHPLDYGYMQRHN-UHFFFAOYSA-N N-Butanol Chemical compound CCCCO LRHPLDYGYMQRHN-UHFFFAOYSA-N 0.000 description 2
- 229920002873 Polyethylenimine Polymers 0.000 description 2
- 239000004721 Polyphenylene oxide Substances 0.000 description 2
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical class [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 2
- YXFVVABEGXRONW-UHFFFAOYSA-N Toluene Natural products CC1=CC=CC=C1 YXFVVABEGXRONW-UHFFFAOYSA-N 0.000 description 2
- 238000013019 agitation Methods 0.000 description 2
- 239000000956 alloy Substances 0.000 description 2
- 229910045601 alloy Inorganic materials 0.000 description 2
- 150000001408 amides Chemical class 0.000 description 2
- QGZKDVFQNNGYKY-UHFFFAOYSA-O ammonium group Chemical group [NH4+] QGZKDVFQNNGYKY-UHFFFAOYSA-O 0.000 description 2
- MTHSVFCYNBDYFN-UHFFFAOYSA-N anhydrous diethylene glycol Natural products OCCOCCO MTHSVFCYNBDYFN-UHFFFAOYSA-N 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical group [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 229920001400 block copolymer Polymers 0.000 description 2
- 125000002837 carbocyclic group Chemical group 0.000 description 2
- 239000003153 chemical reaction reagent Substances 0.000 description 2
- 230000000052 comparative effect Effects 0.000 description 2
- 238000009833 condensation Methods 0.000 description 2
- 230000005494 condensation Effects 0.000 description 2
- 150000001879 copper Chemical class 0.000 description 2
- ORTQZVOHEJQUHG-UHFFFAOYSA-L copper(II) chloride Chemical compound Cl[Cu]Cl ORTQZVOHEJQUHG-UHFFFAOYSA-L 0.000 description 2
- BSXVKCJAIJZTAV-UHFFFAOYSA-L copper;methanesulfonate Chemical compound [Cu+2].CS([O-])(=O)=O.CS([O-])(=O)=O BSXVKCJAIJZTAV-UHFFFAOYSA-L 0.000 description 2
- 239000008367 deionised water Substances 0.000 description 2
- 229910021641 deionized water Inorganic materials 0.000 description 2
- ZBCBWPMODOFKDW-UHFFFAOYSA-N diethanolamine Chemical compound OCCNCCO ZBCBWPMODOFKDW-UHFFFAOYSA-N 0.000 description 2
- 238000007772 electroless plating Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 125000000816 ethylene group Chemical group [H]C([H])([*:1])C([H])([H])[*:2] 0.000 description 2
- 238000007306 functionalization reaction Methods 0.000 description 2
- 125000004404 heteroalkyl group Chemical group 0.000 description 2
- 125000001072 heteroaryl group Chemical group 0.000 description 2
- 125000005842 heteroatom Chemical group 0.000 description 2
- 235000011167 hydrochloric acid Nutrition 0.000 description 2
- 230000000977 initiatory effect Effects 0.000 description 2
- 150000002500 ions Chemical class 0.000 description 2
- 238000001465 metallisation Methods 0.000 description 2
- 238000010899 nucleation Methods 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- VLTRZXGMWDSKGL-UHFFFAOYSA-N perchloric acid Chemical compound OCl(=O)(=O)=O VLTRZXGMWDSKGL-UHFFFAOYSA-N 0.000 description 2
- 229910052698 phosphorus Inorganic materials 0.000 description 2
- 238000005240 physical vapour deposition Methods 0.000 description 2
- 229920000570 polyether Polymers 0.000 description 2
- 229920000151 polyglycol Polymers 0.000 description 2
- 239000010695 polyglycol Substances 0.000 description 2
- WGYKZJWCGVVSQN-UHFFFAOYSA-N propylamine Chemical compound CCCN WGYKZJWCGVVSQN-UHFFFAOYSA-N 0.000 description 2
- QQONPFPTGQHPMA-UHFFFAOYSA-N propylene Natural products CC=C QQONPFPTGQHPMA-UHFFFAOYSA-N 0.000 description 2
- 125000004805 propylene group Chemical group [H]C([H])([H])C([H])([*:1])C([H])([H])[*:2] 0.000 description 2
- 229920005604 random copolymer Polymers 0.000 description 2
- 229910052708 sodium Inorganic materials 0.000 description 2
- 239000011734 sodium Substances 0.000 description 2
- 239000007858 starting material Substances 0.000 description 2
- 125000001424 substituent group Chemical group 0.000 description 2
- 125000000547 substituted alkyl group Chemical group 0.000 description 2
- IIACRCGMVDHOTQ-UHFFFAOYSA-N sulfamic acid Chemical class NS(O)(=O)=O IIACRCGMVDHOTQ-UHFFFAOYSA-N 0.000 description 2
- 125000004434 sulfur atom Chemical group 0.000 description 2
- WGTYBPLFGIVFAS-UHFFFAOYSA-M tetramethylammonium hydroxide Chemical compound [OH-].C[N+](C)(C)C WGTYBPLFGIVFAS-UHFFFAOYSA-M 0.000 description 2
- 125000003258 trimethylene group Chemical group [H]C([H])([*:2])C([H])([H])C([H])([H])[*:1] 0.000 description 2
- 125000004178 (C1-C4) alkyl group Chemical group 0.000 description 1
- 125000004191 (C1-C6) alkoxy group Chemical group 0.000 description 1
- 125000006700 (C1-C6) alkylthio group Chemical group 0.000 description 1
- 125000004209 (C1-C8) alkyl group Chemical group 0.000 description 1
- GXMPGTXMVQAVAL-UHFFFAOYSA-N 1-[2-hydroxybutyl(methyl)amino]butan-2-ol Chemical compound CCC(O)CN(C)CC(O)CC GXMPGTXMVQAVAL-UHFFFAOYSA-N 0.000 description 1
- XKQMKMVTDKYWOX-UHFFFAOYSA-N 1-[2-hydroxypropyl(methyl)amino]propan-2-ol Chemical compound CC(O)CN(C)CC(C)O XKQMKMVTDKYWOX-UHFFFAOYSA-N 0.000 description 1
- OXBLVCZKDOZZOJ-UHFFFAOYSA-N 2,3-Dihydrothiophene Chemical compound C1CC=CS1 OXBLVCZKDOZZOJ-UHFFFAOYSA-N 0.000 description 1
- MIZIOHLLYXVEHJ-UHFFFAOYSA-N 2-[benzyl(2-hydroxyethyl)amino]ethanol Chemical compound OCCN(CCO)CC1=CC=CC=C1 MIZIOHLLYXVEHJ-UHFFFAOYSA-N 0.000 description 1
- NSUHEKKWYUZSQN-UHFFFAOYSA-N 2-[butan-2-yl(2-hydroxyethyl)amino]ethanol Chemical compound CCC(C)N(CCO)CCO NSUHEKKWYUZSQN-UHFFFAOYSA-N 0.000 description 1
- HHPDFYDITNAMAM-UHFFFAOYSA-N 2-[cyclohexyl(2-hydroxyethyl)amino]ethanol Chemical compound OCCN(CCO)C1CCCCC1 HHPDFYDITNAMAM-UHFFFAOYSA-N 0.000 description 1
- JUVSRZCUMWZBFK-UHFFFAOYSA-N 2-[n-(2-hydroxyethyl)-4-methylanilino]ethanol Chemical compound CC1=CC=C(N(CCO)CCO)C=C1 JUVSRZCUMWZBFK-UHFFFAOYSA-N 0.000 description 1
- OJPDDQSCZGTACX-UHFFFAOYSA-N 2-[n-(2-hydroxyethyl)anilino]ethanol Chemical compound OCCN(CCO)C1=CC=CC=C1 OJPDDQSCZGTACX-UHFFFAOYSA-N 0.000 description 1
- 229940006193 2-mercaptoethanesulfonic acid Drugs 0.000 description 1
- XBNHRNFODJOFRU-UHFFFAOYSA-N 3-(2-benzothiazolylthio)-1-propanesulfonic acid Chemical class C1=CC=C2SC(SCCCS(=O)(=O)O)=NC2=C1 XBNHRNFODJOFRU-UHFFFAOYSA-N 0.000 description 1
- FULCXPQDMXUVSB-UHFFFAOYSA-N 3-(3-sulfanylpropylsulfonyloxy)propane-1-sulfonic acid Chemical compound OS(=O)(=O)CCCOS(=O)(=O)CCCS FULCXPQDMXUVSB-UHFFFAOYSA-N 0.000 description 1
- MQLJIOAPXLAGAP-UHFFFAOYSA-N 3-[amino(azaniumylidene)methyl]sulfanylpropane-1-sulfonate Chemical compound NC(=N)SCCCS(O)(=O)=O MQLJIOAPXLAGAP-UHFFFAOYSA-N 0.000 description 1
- VPWNQTHUCYMVMZ-UHFFFAOYSA-N 4,4'-sulfonyldiphenol Chemical class C1=CC(O)=CC=C1S(=O)(=O)C1=CC=C(O)C=C1 VPWNQTHUCYMVMZ-UHFFFAOYSA-N 0.000 description 1
- AMPCGOAFZFKBGH-UHFFFAOYSA-N 4-[[4-(dimethylamino)phenyl]-(4-methyliminocyclohexa-2,5-dien-1-ylidene)methyl]-n,n-dimethylaniline Chemical compound C1=CC(=NC)C=CC1=C(C=1C=CC(=CC=1)N(C)C)C1=CC=C(N(C)C)C=C1 AMPCGOAFZFKBGH-UHFFFAOYSA-N 0.000 description 1
- 229930185605 Bisphenol Natural products 0.000 description 1
- LSNNMFCWUKXFEE-UHFFFAOYSA-M Bisulfite Chemical compound OS([O-])=O LSNNMFCWUKXFEE-UHFFFAOYSA-M 0.000 description 1
- 125000000041 C6-C10 aryl group Chemical group 0.000 description 1
- 0 CC(C)(*N(*)C(C)(CN)*N(*)*)NC Chemical compound CC(C)(*N(*)C(C)(CN)*N(*)*)NC 0.000 description 1
- OCUCCJIRFHNWBP-IYEMJOQQSA-L Copper gluconate Chemical class [Cu+2].OC[C@@H](O)[C@@H](O)[C@H](O)[C@@H](O)C([O-])=O.OC[C@@H](O)[C@@H](O)[C@H](O)[C@@H](O)C([O-])=O OCUCCJIRFHNWBP-IYEMJOQQSA-L 0.000 description 1
- FBPFZTCFMRRESA-FSIIMWSLSA-N D-Glucitol Natural products OC[C@H](O)[C@H](O)[C@@H](O)[C@H](O)CO FBPFZTCFMRRESA-FSIIMWSLSA-N 0.000 description 1
- FBPFZTCFMRRESA-JGWLITMVSA-N D-glucitol Chemical compound OC[C@H](O)[C@@H](O)[C@H](O)[C@H](O)CO FBPFZTCFMRRESA-JGWLITMVSA-N 0.000 description 1
- CTKINSOISVBQLD-UHFFFAOYSA-N Glycidol Chemical compound OCC1CO1 CTKINSOISVBQLD-UHFFFAOYSA-N 0.000 description 1
- 206010055670 Necrotising ulcerative gingivostomatitis Diseases 0.000 description 1
- 208000006595 Necrotizing Ulcerative Gingivitis Diseases 0.000 description 1
- ISWSIDIOOBJBQZ-UHFFFAOYSA-N Phenol Chemical compound OC1=CC=CC=C1 ISWSIDIOOBJBQZ-UHFFFAOYSA-N 0.000 description 1
- 229920003171 Poly (ethylene oxide) Polymers 0.000 description 1
- 229920002396 Polyurea Polymers 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- AWMVMTVKBNGEAK-UHFFFAOYSA-N Styrene oxide Chemical compound C1OC1C1=CC=CC=C1 AWMVMTVKBNGEAK-UHFFFAOYSA-N 0.000 description 1
- CZMRCDWAGMRECN-UGDNZRGBSA-N Sucrose Chemical compound O[C@H]1[C@H](O)[C@@H](CO)O[C@@]1(CO)O[C@@H]1[C@H](O)[C@@H](O)[C@H](O)[C@@H](CO)O1 CZMRCDWAGMRECN-UGDNZRGBSA-N 0.000 description 1
- 229930006000 Sucrose Natural products 0.000 description 1
- SLINHMUFWFWBMU-UHFFFAOYSA-N Triisopropanolamine Chemical compound CC(O)CN(CC(C)O)CC(C)O SLINHMUFWFWBMU-UHFFFAOYSA-N 0.000 description 1
- ZJCCRDAZUWHFQH-UHFFFAOYSA-N Trimethylolpropane Chemical compound CCC(CO)(CO)CO ZJCCRDAZUWHFQH-UHFFFAOYSA-N 0.000 description 1
- 150000001242 acetic acid derivatives Chemical class 0.000 description 1
- 230000002378 acidificating effect Effects 0.000 description 1
- 150000007513 acids Chemical class 0.000 description 1
- 125000002015 acyclic group Chemical group 0.000 description 1
- 125000002723 alicyclic group Chemical group 0.000 description 1
- 150000001338 aliphatic hydrocarbons Chemical class 0.000 description 1
- 229910052783 alkali metal Chemical group 0.000 description 1
- 150000001340 alkali metals Chemical group 0.000 description 1
- 125000005108 alkenylthio group Chemical group 0.000 description 1
- 150000003973 alkyl amines Chemical class 0.000 description 1
- 229940045714 alkyl sulfonate alkylating agent Drugs 0.000 description 1
- 150000008052 alkyl sulfonates Chemical class 0.000 description 1
- 125000004414 alkyl thio group Chemical group 0.000 description 1
- 125000005233 alkylalcohol group Chemical group 0.000 description 1
- DIZPMCHEQGEION-UHFFFAOYSA-H aluminium sulfate (anhydrous) Chemical class [Al+3].[Al+3].[O-]S([O-])(=O)=O.[O-]S([O-])(=O)=O.[O-]S([O-])(=O)=O DIZPMCHEQGEION-UHFFFAOYSA-H 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 150000004982 aromatic amines Chemical class 0.000 description 1
- 125000002029 aromatic hydrocarbon group Chemical group 0.000 description 1
- 150000004945 aromatic hydrocarbons Chemical class 0.000 description 1
- 125000005228 aryl sulfonate group Chemical group 0.000 description 1
- 125000005110 aryl thio group Chemical group 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- SRSXLGNVWSONIS-UHFFFAOYSA-N benzenesulfonic acid Chemical compound OS(=O)(=O)C1=CC=CC=C1 SRSXLGNVWSONIS-UHFFFAOYSA-N 0.000 description 1
- 150000001720 carbohydrates Chemical class 0.000 description 1
- 235000014633 carbohydrates Nutrition 0.000 description 1
- 150000001735 carboxylic acids Chemical class 0.000 description 1
- 239000003054 catalyst Substances 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 239000011247 coating layer Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- ZNEWHQLOPFWXOF-UHFFFAOYSA-N coenzyme M Chemical compound OS(=O)(=O)CCS ZNEWHQLOPFWXOF-UHFFFAOYSA-N 0.000 description 1
- KUNSUQLRTQLHQQ-UHFFFAOYSA-N copper tin Chemical compound [Cu].[Sn] KUNSUQLRTQLHQQ-UHFFFAOYSA-N 0.000 description 1
- XTVVROIMIGLXTD-UHFFFAOYSA-N copper(II) nitrate Chemical compound [Cu+2].[O-][N+]([O-])=O.[O-][N+]([O-])=O XTVVROIMIGLXTD-UHFFFAOYSA-N 0.000 description 1
- JZCCFEFSEZPSOG-UHFFFAOYSA-L copper(II) sulfate pentahydrate Chemical compound O.O.O.O.O.[Cu+2].[O-]S([O-])(=O)=O JZCCFEFSEZPSOG-UHFFFAOYSA-L 0.000 description 1
- OPQARKPSCNTWTJ-UHFFFAOYSA-L copper(ii) acetate Chemical compound [Cu+2].CC([O-])=O.CC([O-])=O OPQARKPSCNTWTJ-UHFFFAOYSA-L 0.000 description 1
- MRYMYQPDGZIGDM-UHFFFAOYSA-L copper;4-methylbenzenesulfonate Chemical compound [Cu+2].CC1=CC=C(S([O-])(=O)=O)C=C1.CC1=CC=C(S([O-])(=O)=O)C=C1 MRYMYQPDGZIGDM-UHFFFAOYSA-L 0.000 description 1
- RIOSFUBRIQHOMS-UHFFFAOYSA-L copper;benzenesulfonate Chemical compound [Cu+2].[O-]S(=O)(=O)C1=CC=CC=C1.[O-]S(=O)(=O)C1=CC=CC=C1 RIOSFUBRIQHOMS-UHFFFAOYSA-L 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- LGLFFNDHMLKUMI-UHFFFAOYSA-N crystal violet cation Chemical compound C1=CC(N(C)C)=CC=C1C(C=1C=CC(=CC=1)N(C)C)=C1C=CC(=[N+](C)C)C=C1 LGLFFNDHMLKUMI-UHFFFAOYSA-N 0.000 description 1
- FWBOFUGDKHMVPI-UHFFFAOYSA-K dicopper;2-oxidopropane-1,2,3-tricarboxylate Chemical compound [Cu+2].[Cu+2].[O-]C(=O)CC([O-])(C([O-])=O)CC([O-])=O FWBOFUGDKHMVPI-UHFFFAOYSA-K 0.000 description 1
- 235000013681 dietary sucrose Nutrition 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- GYZLOYUZLJXAJU-UHFFFAOYSA-N diglycidyl ether Chemical compound C1OC1COCC1CO1 GYZLOYUZLJXAJU-UHFFFAOYSA-N 0.000 description 1
- MZGNSEAPZQGJRB-UHFFFAOYSA-N dimethyldithiocarbamic acid Chemical compound CN(C)C(S)=S MZGNSEAPZQGJRB-UHFFFAOYSA-N 0.000 description 1
- 239000012153 distilled water Substances 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 125000003438 dodecyl group Chemical group [H]C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])* 0.000 description 1
- 238000004070 electrodeposition Methods 0.000 description 1
- 239000003480 eluent Substances 0.000 description 1
- CCIVGXIOQKPBKL-UHFFFAOYSA-M ethanesulfonate Chemical compound CCS([O-])(=O)=O CCIVGXIOQKPBKL-UHFFFAOYSA-M 0.000 description 1
- 125000001495 ethyl group Chemical group [H]C([H])([H])C([H])([H])* 0.000 description 1
- 125000003916 ethylene diamine group Chemical group 0.000 description 1
- 238000001914 filtration Methods 0.000 description 1
- WSFSSNUMVMOOMR-UHFFFAOYSA-N formaldehyde Substances O=C WSFSSNUMVMOOMR-UHFFFAOYSA-N 0.000 description 1
- 238000007429 general method Methods 0.000 description 1
- 235000011187 glycerol Nutrition 0.000 description 1
- 239000003966 growth inhibitor Substances 0.000 description 1
- 150000004820 halides Chemical class 0.000 description 1
- 125000005843 halogen group Chemical group 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 125000000623 heterocyclic group Chemical group 0.000 description 1
- WGCNASOHLSPBMP-UHFFFAOYSA-N hydroxyacetaldehyde Natural products OCC=O WGCNASOHLSPBMP-UHFFFAOYSA-N 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 239000003999 initiator Substances 0.000 description 1
- 230000003993 interaction Effects 0.000 description 1
- 125000003010 ionic group Chemical group 0.000 description 1
- 150000003951 lactams Chemical class 0.000 description 1
- ZADYMNAVLSWLEQ-UHFFFAOYSA-N magnesium;oxygen(2-);silicon(4+) Chemical compound [O-2].[O-2].[O-2].[Mg+2].[Si+4] ZADYMNAVLSWLEQ-UHFFFAOYSA-N 0.000 description 1
- 229910001507 metal halide Inorganic materials 0.000 description 1
- 150000005309 metal halides Chemical class 0.000 description 1
- 229910001960 metal nitrate Inorganic materials 0.000 description 1
- CRVGTESFCCXCTH-UHFFFAOYSA-N methyl diethanolamine Chemical compound OCCN(C)CCO CRVGTESFCCXCTH-UHFFFAOYSA-N 0.000 description 1
- 125000002496 methyl group Chemical group [H]C([H])([H])* 0.000 description 1
- 125000001570 methylene group Chemical group [H]C([H])([*:1])[*:2] 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- BXYVQNNEFZOBOZ-UHFFFAOYSA-N n-[3-(dimethylamino)propyl]-n',n'-dimethylpropane-1,3-diamine Chemical compound CN(C)CCCNCCCN(C)C BXYVQNNEFZOBOZ-UHFFFAOYSA-N 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 125000000449 nitro group Chemical group [O-][N+](*)=O 0.000 description 1
- 125000004433 nitrogen atom Chemical group N* 0.000 description 1
- QJGQUHMNIGDVPM-UHFFFAOYSA-N nitrogen group Chemical group [N] QJGQUHMNIGDVPM-UHFFFAOYSA-N 0.000 description 1
- 229950004864 olamine Drugs 0.000 description 1
- 239000011368 organic material Substances 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 239000001301 oxygen Chemical group 0.000 description 1
- 125000004430 oxygen atom Chemical group O* 0.000 description 1
- 238000004806 packaging method and process Methods 0.000 description 1
- 238000012856 packing Methods 0.000 description 1
- WXZMFSXDPGVJKK-UHFFFAOYSA-N pentaerythritol Chemical compound OCC(CO)(CO)CO WXZMFSXDPGVJKK-UHFFFAOYSA-N 0.000 description 1
- ACVYVLVWPXVTIT-UHFFFAOYSA-N phosphinic acid Chemical compound O[PH2]=O ACVYVLVWPXVTIT-UHFFFAOYSA-N 0.000 description 1
- 150000003009 phosphonic acids Chemical class 0.000 description 1
- 235000011007 phosphoric acid Nutrition 0.000 description 1
- 150000003016 phosphoric acids Chemical class 0.000 description 1
- 229920003023 plastic Polymers 0.000 description 1
- 239000004033 plastic Substances 0.000 description 1
- 229920002006 poly(N-vinylimidazole) polymer Polymers 0.000 description 1
- 229920000083 poly(allylamine) Polymers 0.000 description 1
- 229920002401 polyacrylamide Polymers 0.000 description 1
- 229920001281 polyalkylene Polymers 0.000 description 1
- 229920000767 polyaniline Polymers 0.000 description 1
- 229920000647 polyepoxide Polymers 0.000 description 1
- 108010094020 polyglycine Proteins 0.000 description 1
- 229920000232 polyglycine polymer Polymers 0.000 description 1
- 229920005862 polyol Polymers 0.000 description 1
- 229920001451 polypropylene glycol Polymers 0.000 description 1
- 229920002717 polyvinylpyridine Polymers 0.000 description 1
- 229920000036 polyvinylpyrrolidone Polymers 0.000 description 1
- 239000001267 polyvinylpyrrolidone Substances 0.000 description 1
- 235000013855 polyvinylpyrrolidone Nutrition 0.000 description 1
- 229910052700 potassium Inorganic materials 0.000 description 1
- 230000003389 potentiating effect Effects 0.000 description 1
- 239000002244 precipitate Substances 0.000 description 1
- 239000000047 product Substances 0.000 description 1
- BDERNNFJNOPAEC-UHFFFAOYSA-N propan-1-ol Chemical compound CCCO BDERNNFJNOPAEC-UHFFFAOYSA-N 0.000 description 1
- KCXFHTAICRTXLI-UHFFFAOYSA-N propane-1-sulfonic acid Chemical compound CCCS(O)(=O)=O KCXFHTAICRTXLI-UHFFFAOYSA-N 0.000 description 1
- ZNZJJSYHZBXQSM-UHFFFAOYSA-N propane-2,2-diamine Chemical compound CC(C)(N)N ZNZJJSYHZBXQSM-UHFFFAOYSA-N 0.000 description 1
- 238000005086 pumping Methods 0.000 description 1
- 230000035484 reaction time Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 238000001542 size-exclusion chromatography Methods 0.000 description 1
- NJZLKINMWXQCHI-UHFFFAOYSA-N sodium;3-(3-sulfopropyldisulfanyl)propane-1-sulfonic acid Chemical class [Na].[Na].OS(=O)(=O)CCCSSCCCS(O)(=O)=O NJZLKINMWXQCHI-UHFFFAOYSA-N 0.000 description 1
- FRTIVUOKBXDGPD-UHFFFAOYSA-M sodium;3-sulfanylpropane-1-sulfonate Chemical compound [Na+].[O-]S(=O)(=O)CCCS FRTIVUOKBXDGPD-UHFFFAOYSA-M 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 239000007790 solid phase Substances 0.000 description 1
- 239000000600 sorbitol Substances 0.000 description 1
- 238000001179 sorption measurement Methods 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
- 238000003756 stirring Methods 0.000 description 1
- 125000003107 substituted aryl group Chemical group 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 229960004793 sucrose Drugs 0.000 description 1
- QAOWNCQODCNURD-UHFFFAOYSA-L sulfate group Chemical group S(=O)(=O)([O-])[O-] QAOWNCQODCNURD-UHFFFAOYSA-L 0.000 description 1
- BDHFUVZGWQCTTF-UHFFFAOYSA-M sulfonate Chemical group [O-]S(=O)=O BDHFUVZGWQCTTF-UHFFFAOYSA-M 0.000 description 1
- 150000003460 sulfonic acids Chemical class 0.000 description 1
- 150000003467 sulfuric acid derivatives Chemical class 0.000 description 1
- 239000008399 tap water Substances 0.000 description 1
- 235000020679 tap water Nutrition 0.000 description 1
- ISIJQEHRDSCQIU-UHFFFAOYSA-N tert-butyl 2,7-diazaspiro[4.5]decane-7-carboxylate Chemical compound C1N(C(=O)OC(C)(C)C)CCCC11CNCC1 ISIJQEHRDSCQIU-UHFFFAOYSA-N 0.000 description 1
- 150000005622 tetraalkylammonium hydroxides Chemical class 0.000 description 1
- 125000000383 tetramethylene group Chemical group [H]C([H])([*:1])C([H])([H])C([H])([H])C([H])([H])[*:2] 0.000 description 1
- 150000003573 thiols Chemical class 0.000 description 1
- ITMCEJHCFYSIIV-UHFFFAOYSA-N triflic acid Chemical compound OS(=O)(=O)C(F)(F)F ITMCEJHCFYSIIV-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 229910052720 vanadium Inorganic materials 0.000 description 1
- 239000003039 volatile agent Substances 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
- 239000011701 zinc Substances 0.000 description 1
Images
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
- C23C18/31—Coating with metals
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
- C23C18/31—Coating with metals
- C23C18/32—Coating with nickel, cobalt or mixtures thereof with phosphorus or boron
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D3/00—Electroplating: Baths therefor
- C25D3/02—Electroplating: Baths therefor from solutions
- C25D3/38—Electroplating: Baths therefor from solutions of copper
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D3/00—Electroplating: Baths therefor
- C25D3/02—Electroplating: Baths therefor from solutions
- C25D3/56—Electroplating: Baths therefor from solutions of alloys
- C25D3/58—Electroplating: Baths therefor from solutions of alloys containing more than 50% by weight of copper
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
- H01L21/288—Deposition of conductive or insulating materials for electrodes conducting electric current from a liquid, e.g. electrolytic deposition
- H01L21/2885—Deposition of conductive or insulating materials for electrodes conducting electric current from a liquid, e.g. electrolytic deposition using an external electrical current, i.e. electro-deposition
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
- H01L21/76877—Filling of holes, grooves or trenches, e.g. vias, with conductive material
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D7/00—Electroplating characterised by the article coated
- C25D7/12—Semiconductors
- C25D7/123—Semiconductors first coated with a seed layer or a conductive layer
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/40—Forming printed elements for providing electric connections to or between printed circuits
- H05K3/42—Plated through-holes or plated via connections
- H05K3/423—Plated through-holes or plated via connections characterised by electroplating method
Abstract
a)活性アミノ官能基を含むアミン化合物と、
b)エチレンオキシド、及びC3及びC4アルキレンオキシドから選ばれる、少なくとも1種の化合物の混合物、
を反応させることによって得ることができる、少なくとも1種の抑制剤を含み、該抑制剤は、分子量Mwが6000g/モル以上であることを特徴とする組成物。
【選択図】図6b
Description
−R1基は、それぞれ独立して、エチレンオキシド、及び少なくとも1種の更なるC3〜C4アルキレンオキシドのコポリマーから選ばれ、及び上記コポリマーはランダムコポリマーであり、
−R2基は、それぞれ独立して、R1又はアルキル、好ましくはC1〜C6アルキル、最も好ましくはメチル又はエチルから選ばれ、
−X及びYは、独立してスペーサー基であり、及びXは、各繰り返し単位のために、独立して、C1〜C6アルキレン、及びZ−(O−Z)mから選ばれ、ここでZ基は、それぞれ独立してC2〜C6アルキレンから選ばれ、
−nは、0以上の整数であり、
−mは、1以上の整数である)
の化合物から選ばれる。
a)本発明に従う組成物を含む金属メッキ溶液を基材に接触させる工程、及び
b)上記基材に、金属層が上記基材上に堆積するのに十分な時間、電流密度を施す工程、
によって基材上に金属層を堆積させる方法である。
ここで、
−Mが、水素、又はアルカリ金属(好ましくはNa又はK)であり、
−XがP又はSであり、
−n=1〜6、
−R21が、C1〜C8アルキル基、又はヘテロアルキル基、アリール基、又はヘテロ芳香族基から選ばれる。ヘテロアルキル基は、1個以上のヘテロ原子(N、S、O)及び1〜12個の炭素原子を有している。炭素環式のアリール基は、典型的なアリール基、例えば、フェニル、ナフチルである。ヘテロ芳香族基は、適切なアリール基でもあり、及び1個以上のN、O又はS原子、及び1〜3個の、分離した環又は縮合環を含む。
−R22が、H又は(−S−R21’XO3M)から選ばれ、ここで、R21’は、R21と同一又は異なるものである。
MO3S−R21−SH
MO3S−R21−S−S−R21’−SO3M
MO3S−Ar−S−S−Ar−SO3M
(ここで、R21は上記に定義したものであり、及びArはアリールである。)
−SPS:ビス−(3−スルホプロピル)−ジスルフィドジソジウム塩
−MPS:3−メルカプト−1−プロパンスルホン酸、ナトリウム塩。
・R11基は、それぞれが独立して、二価の直鎖状、及び枝分れした、2〜6個の炭素原子を有する脂肪族炭化水素基から選ばれ、及び
・R12基は、それぞれ、水素、及び脂肪族、脂環式、及び芳香族炭化水素(これらの全ては、直鎖状、又は枝分れしていて良く、及び1〜30個の炭素原子を有する)から選ばれる。
ジエチレントリアミン(389g)及び水(19.5g)を、2Lのオートクレーブ内に70℃で配置した。窒素中性化(nitrogen neutralization)の後、エチレンオキシド(830g)を、90℃で、8時間30分にわたって部分に分けて加えた。反応を完了させるために、混合物を3時間、後反応させた。次に、温度を60℃まで低下させ、そして混合物を一晩、攪拌した。反応混合物を、窒素で揮散(ストリップ)させ、そして減圧下に80℃で揮発成分を除去した。アミン価が9.12ミリモル/gの、粘性の高い、軽い黄色の中間生成物(1240g)が得られた。中間生成物(48.5g)及び水酸化カリウム水溶液(濃度:50w%KOH;1.45g)を、2Lのオートクレーブ内に80℃で配置した。窒素中性化の後、2時間、100℃で、減圧(<10ミリバール)下に、溶媒を除去した。次に圧力を2バールに増し、そしてエチレンオキシド(330g)とプロピレンオキシド(479g)の混合物を、140℃で、10時間30分にわたり、部分に分けて加えた。反応を完了させるために、混合物を、同じ温度で7時間、後反応させた。次に、温度を60℃に低下させ、そして混合物を一晩、攪拌した。次に、反応混合物を窒素でストリップし、そして揮発性成分を80℃で減圧下に除去した。第2の中間生成物が、アミン価が0.527ミリモル/gの軽い茶色の液体(867g)として得られた。第2の中間生成物(323g)を、2Lのオートクレーブに80℃で配置した。窒素の中性化(nitrogen neutralization)の後、溶媒を20分間、80〜120℃で、減圧下(<10ミリバール)に除去した。次に、圧力を2バールに増し、そしてエチレンオキシド(158g)とプロピレンオキシド(207g)の混合物を、140℃で、7時間の期間にわたり、部分にわけて加えた。反応を完了させるために、混合物を同じ温度で7時間、後反応させた。次に、温度を60℃に低下させ、そして混合物を週末にかけて攪拌した。次に、反応混合物を、窒素でストリップし、そして揮発成分を減圧下(in vacuo)で80℃で除去した。抑制剤が、アミン価が0.243ミリモル/gの軽い茶色の液体(694g)として得られた。GPC:d=1.20。
ジエチレントリアミン(203g)及び水(10.1g)を、2Lのオートクレーブ内に配置した。窒素中性化の後、エチレンオキシド(830g)を、90℃で、5時間にわたって部分に分けて加えた。反応を完了させるために、混合物を一晩、後反応させた。次に、反応混合物を、窒素で揮散(ストリップ)させ、そして減圧下に100℃で揮発成分を除去した。OH価が852mgKOH/gの、粘性の高い、軽い黄色の中間生成物(631g)が得られた。この中間生成物(20.0g)を水(30g)中で希釈し、そしてこの溶液と水酸化カリウム水溶液(濃度:50w%KOH;60g)を、2Lのオートクレーブ内に配置した。120℃で2時間、減圧(<10mbar)下に、溶媒を除去した。窒素中性化の後、圧力を2バールに上昇させ、そしてエチレンオキシド(477g)とプロピレンオキシド(647g)の混合物を140℃で部分に分けて加えた。混合物を一晩、後反応させ、そして次に反応混合物を窒素を使用してストリップした。次にAmbosol(33.6g)及びHyflow(2.2g)を加え、そして残留する揮発成分を、100℃で、及び<10mbarで、2時間、ロータリーエバポレーターで除去した。ろ過の後、抑制剤2が、黄色い液体(1120g)として得られた。GPC:d=1.08;アミン価:0.16ミリモル/g。
トリエチレンテトラアミン(509g)及び水(25.5g)を5Lのオートクレーブ内に80℃で配置した。窒素中性化の後、圧力を2バールに増加させ、そしてエチレンオキシド(721g)を、110℃で8時間10分にわたって、部分に分けて加えた。反応を完了させるために、混合物を6時間、後反応(post-react)させた。次に混合物を80℃で一晩、攪拌し、そして次に窒素でストリップした。減圧下に、80℃で、揮発成分を除去した後、アミン価が10.1ミリモル/gの高粘性の黄色い中間生成物(1220g)が得られた。
ジエチレントリアミン(382g)及び水(19.1g)を70℃で、2Lのオートクレーブ中に配置した。窒素中性化の後、エチオレンオキシド(814g)を90℃で、8時間の期間にわたって部分に分けて加えた。反応を完了させるために、混合物を3時時間、後反応させた。次に温度を60℃まで低下させ、そして混合物を一晩、攪拌した。次に反応混合物を、窒素を使用してストリップし、そして揮発成分を減圧下で80℃で除去した。粘性が高い、軽い黄色の中間生成物(1180g)が得られた。
DI水(脱イオン水)、硫酸銅としての40g/l銅、10g/l硫酸、HClとしての0.050g/lのクロリドイオン、0.028g/lのSPS及び2.00ml/lの、DI水中抑制剤1(実施例1で製造)の5.3w%溶液を組み合わせることによって、メッキ溶液を製造した。
DI水、硫酸銅としての40g/l銅、10g/l硫酸、HClとしての0.050g/lのクロリドイオン、0.028g/lのSPS及び7.00ml/lの、DI水中抑制剤2(実施例2で製造)の5.3w%溶液を組み合わせることによって、メッキ溶液を製造した。
DI水、硫酸銅としての40g/l銅、10g/l硫酸、HClとしての0.050g/lのクロリドイオン、0.028g/lのSPS及び5.00ml/lの、DI水中抑制剤3(実施例3で製造)の5.0w%溶液を組み合わせることによって、メッキ溶液を製造した。
DI水、硫酸銅としての40g/l銅、10g/l硫酸、HClとしての0.050g/lのクロリドイオン、0.028g/lのSPS及び5.00ml/lの、DI水中抑制剤4(実施例4で製造)の5.0w%溶液を組み合わせることによって、メッキ溶液を製造した。
Claims (16)
- 金属イオンの供給源、及び
a)活性アミノ官能基を含むアミン化合物と、
b)エチレンオキシド、及びC3及びC4アルキレンオキシドから選ばれる、少なくとも1種の化合物の混合物、
を反応させることによって得ることができる、少なくとも1種の抑制剤を含み、
該抑制剤は、分子量Mwが6000g/モル以上であることを特徴とする組成物。 - 前記抑制剤は、分子量Mwが、7000〜19000g/モルであることを特徴とする請求項1に記載の組成物。
- 抑制剤の分子量Mwが、9000〜18000g/モルであることを特徴とする請求項1に記載の組成物。
- 金属イオンが、銅イオンを含むことを特徴とする請求項1〜3の何れか1項に記載の組成物。
- 活性アミノ官能基を含むアミン化合物が、少なくとも3個の活性アミノ基を含むことを特徴とする請求項1〜4の何れか1項に記載の組成物。
- 抑制剤が、式I
−R1基が、それぞれ独立して、エチレンオキシド、及び少なくとも1種の、更なるC3〜C4アルキレンオキシドのコポリマーから選ばれ、該コポリマーは、ランダムポリマーであり、
−R2基が、それぞれ独立してR1、又はアルキレン、好ましくはC1から選ばれ、
−X及びYが、独立してスペーサー基であり、及びXが、各繰り返し単位について、独立して、C1〜C6アルキレン、及びZ−(O−Z)mから選ばれ、ここで、Z基は、それぞれ独立して、C2〜C6アルキレンから選ばれ、
−nが、0以上の整数であり、
−mが、1以上の整数である)
の化合物から選ばれることを特徴とする請求項1〜5の何れか1項に記載の組成物。 - X及びYが独立しており、及びXが、各繰り返し単位について、C1〜C4アルキレンから選ばれることを特徴とする請求項6に記載の組成物。
- アミン化合物が、エチレンジアミン、ジエチレントリアミン、(3−(2−アミノエチル)アミノプロピルアミン、3,3’−イミノジ(プロピルアミン)、N,N−ビス(3−アミノプロピル)メチルアミン、ビス(3−ジメチルアミノプロピル)アミン、トリエチレンテトラアミン、及びN,N’−ビス(3−アミノプロピル)エチレンジアミンから選ばれることを特徴とする請求項1〜7の何れか1項に記載の組成物。
- C3〜C4アルキレンオキシドが、プロピレンオキシドから選ばれることを特徴とする請求項1〜8の何れか1項に記載の組成物。
- エチレンオキシド及び更なるC3〜C4アルキレンオキシドのコポリマー中のエチレンオキシドの含有量が、30〜70%であることを特徴とする請求項1〜9の何れか1項に記載の組成物。
- 更に、少なくとも1種の促進剤を含むことを特徴とする請求項1〜10の何れか1項に記載の組成物。
- 少なくとも1種の平滑剤を含むことを特徴とする請求項1〜11の何れか1項に記載の組成物。
- 請求項1に記載の組成物を含む金属メッキ溶液を、アパーチャー径が30ナノメーター以下の機構を含む基材上に金属を堆積させるために使用する方法。
- a)請求項1〜13の何れか1項に記載の組成物を含む金属メッキ溶液を、前記基材と接触させる工程、及び
b)金属層が前記基材上に堆積するのに十分な時間、前記基材に電流密度を施す工程、
によって基材上に金属層を堆積させる方法。 - 基材が、マイクロメーター以下の寸法の機構を有し、及び堆積が、マイクロメーター、又はマイクロメーター以下の寸法の機構を満たすように行われることを特徴とする請求項14に記載の方法。
- マイクロメーター、又はマイクロメーター以下の寸法の機構が、1〜30nmのアパーチャー径、及び/又は4以上のアスペクト比を有することを特徴とする請求項15に記載の方法。
Applications Claiming Priority (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
EP09157542 | 2009-04-07 | ||
EP09157542.3 | 2009-04-07 | ||
US25632909P | 2009-10-30 | 2009-10-30 | |
US61/256,329 | 2009-10-30 | ||
PCT/EP2010/054108 WO2010115756A1 (en) | 2009-04-07 | 2010-03-29 | Composition for metal plating comprising suppressing agent for void free submicron feature filling |
Publications (3)
Publication Number | Publication Date |
---|---|
JP2012522898A true JP2012522898A (ja) | 2012-09-27 |
JP2012522898A5 JP2012522898A5 (ja) | 2013-05-09 |
JP5702360B2 JP5702360B2 (ja) | 2015-04-15 |
Family
ID=42935667
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2012503962A Active JP5702360B2 (ja) | 2009-04-07 | 2010-03-29 | ボイドのないサブミクロンの機構を充填するための、抑制剤を含む金属メッキ用の組成物 |
Country Status (11)
Country | Link |
---|---|
US (1) | US20120027948A1 (ja) |
EP (1) | EP2417284B1 (ja) |
JP (1) | JP5702360B2 (ja) |
KR (2) | KR20120005023A (ja) |
CN (2) | CN104195602B (ja) |
IL (1) | IL215017A (ja) |
MY (1) | MY157214A (ja) |
RU (1) | RU2542178C2 (ja) |
SG (2) | SG10201401324YA (ja) |
TW (1) | TWI489012B (ja) |
WO (1) | WO2010115756A1 (ja) |
Cited By (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2014505167A (ja) * | 2010-12-21 | 2014-02-27 | ビーエーエスエフ ソシエタス・ヨーロピア | レベリング剤を含有する金属電解めっき組成物 |
JP2014177670A (ja) * | 2013-03-14 | 2014-09-25 | Dainippon Printing Co Ltd | インターポーザー基板の製造方法。 |
JP2015521237A (ja) * | 2012-05-25 | 2015-07-27 | マクダーミッド アキューメン インコーポレーテッド | 低酸素含有量を有する銅電着物を製造するための添加剤 |
JP2015537250A (ja) * | 2012-11-21 | 2015-12-24 | スリーエム イノベイティブ プロパティズ カンパニー | 光拡散フィルム及びそれを作製する方法 |
JP2016207841A (ja) * | 2015-04-22 | 2016-12-08 | 新光電気工業株式会社 | 配線基板及びその製造方法 |
JP2019536911A (ja) * | 2016-09-22 | 2019-12-19 | マクダーミッド エンソン インコーポレイテッド | マイクロエレクトロニクスにおける銅電着 |
JPWO2021200614A1 (ja) * | 2020-04-01 | 2021-10-07 |
Families Citing this family (18)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TW200632147A (ja) | 2004-11-12 | 2006-09-16 | ||
US9869029B2 (en) | 2009-07-30 | 2018-01-16 | Basf Se | Composition for metal plating comprising suppressing agent for void free submicron feature filling |
US9834677B2 (en) | 2010-03-18 | 2017-12-05 | Basf Se | Composition for metal electroplating comprising leveling agent |
EP2468927A1 (en) | 2010-12-21 | 2012-06-27 | Basf Se | Composition for metal electroplating comprising leveling agent |
JP6062425B2 (ja) | 2011-06-01 | 2017-01-18 | ビーエーエスエフ ソシエタス・ヨーロピアBasf Se | シリコン貫通ビアおよび相互接続フィーチャーのボトムアップ充填のための添加剤を含む金属電気めっきのための組成物 |
EP2530102A1 (en) | 2011-06-01 | 2012-12-05 | Basf Se | Additive and composition for metal electroplating comprising an additive for bottom-up filling of though silicon vias |
WO2014072885A2 (en) | 2012-11-09 | 2014-05-15 | Basf Se | Composition for metal electroplating comprising leveling agent |
WO2018073011A1 (en) | 2016-10-20 | 2018-04-26 | Basf Se | Composition for metal plating comprising suppressing agent for void free submicron feature filling |
JP2020502370A (ja) * | 2016-12-20 | 2020-01-23 | ビーエーエスエフ ソシエタス・ヨーロピアBasf Se | ボイドフリーでの埋め込みのための抑制剤を含む金属めっきのための組成物 |
EP3415664B1 (en) * | 2017-06-16 | 2019-09-18 | ATOTECH Deutschland GmbH | Aqueous acidic copper electroplating bath and method for electrolytically depositing of a copper coating |
KR102641595B1 (ko) | 2017-09-04 | 2024-02-27 | 바스프 에스이 | 평탄화 제제를 포함하는 금속 전기 도금용 조성물 |
SG11202009106XA (en) * | 2018-04-20 | 2020-11-27 | Basf Se | Composition for tin or tin alloy electroplating comprising suppressing agent |
CN114450438A (zh) * | 2019-09-27 | 2022-05-06 | 巴斯夫欧洲公司 | 用于铜凸块电沉积的包含流平剂的组合物 |
KR20220069011A (ko) * | 2019-09-27 | 2022-05-26 | 바스프 에스이 | 레벨링제를 포함하는 구리 범프 전착용 조성물 |
WO2021197950A1 (en) | 2020-04-03 | 2021-10-07 | Basf Se | Composition for copper bump electrodeposition comprising a polyaminoamide type leveling agent |
EP3922662A1 (en) | 2020-06-10 | 2021-12-15 | Basf Se | Polyalkanolamine |
WO2023052254A1 (en) | 2021-10-01 | 2023-04-06 | Basf Se | Composition for copper electrodeposition comprising a polyaminoamide type leveling agent |
WO2024008562A1 (en) | 2022-07-07 | 2024-01-11 | Basf Se | Use of a composition comprising a polyaminoamide type compound for copper nanotwin electrodeposition |
Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2003226892A (ja) * | 2002-02-06 | 2003-08-15 | Dai Ichi Kogyo Seiyaku Co Ltd | 非イオン界面活性剤 |
JP2003328179A (ja) * | 2002-05-10 | 2003-11-19 | Ebara Udylite Kk | 酸性銅めっき浴用添加剤及び該添加剤を含有する酸性銅めっき浴並びに該めっき浴を用いるめっき方法 |
JP2004169072A (ja) * | 2002-11-18 | 2004-06-17 | Ebara Udylite Kk | クローズド酸性銅めっきシステムおよびこれに利用される耐温性酸性銅めっき浴 |
US20060213780A1 (en) * | 2005-03-24 | 2006-09-28 | Taiwan Semiconductor Manufacturing Co., Ltd. | Electroplating composition and method |
JP2008519908A (ja) * | 2004-11-12 | 2008-06-12 | エントン インコーポレイテッド | マイクロ電子機器における銅電気沈積方法 |
JP2012503976A (ja) * | 2008-09-30 | 2012-02-16 | セントロ デ インジエニエリア ジエネテイカ イ バイオテクノロジア | インターロイキン−15活性のペプチドアンタゴニスト |
Family Cites Families (18)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4139425A (en) * | 1978-04-05 | 1979-02-13 | R. O. Hull & Company, Inc. | Composition, plating bath, and method for electroplating tin and/or lead |
US4505839A (en) | 1981-05-18 | 1985-03-19 | Petrolite Corporation | Polyalkanolamines |
US4347108A (en) | 1981-05-29 | 1982-08-31 | Rohco, Inc. | Electrodeposition of copper, acidic copper electroplating baths and additives therefor |
US5051154A (en) | 1988-08-23 | 1991-09-24 | Shipley Company Inc. | Additive for acid-copper electroplating baths to increase throwing power |
DE4003243A1 (de) | 1990-02-03 | 1991-08-08 | Basf Ag | Verwendung von trialkanolaminpolyethern als demulgatoren von oel-in-wasser-emulsionen |
DE19622221A1 (de) * | 1996-06-03 | 1997-12-04 | Henkel Kgaa | Verfahren zur Beschichtung elektrisch leitfähiger Substrate |
US6444110B2 (en) | 1999-05-17 | 2002-09-03 | Shipley Company, L.L.C. | Electrolytic copper plating method |
US20040045832A1 (en) * | 1999-10-14 | 2004-03-11 | Nicholas Martyak | Electrolytic copper plating solutions |
CN1190521C (zh) * | 2002-07-05 | 2005-02-23 | 旺宏电子股份有限公司 | 铜电镀溶液及铜电镀方法 |
RU2237755C2 (ru) * | 2002-07-25 | 2004-10-10 | Калининградский государственный университет | Электролит меднения стальных деталей |
US6833479B2 (en) | 2002-08-16 | 2004-12-21 | Cognis Corporation | Antimisting agents |
US7147767B2 (en) * | 2002-12-16 | 2006-12-12 | 3M Innovative Properties Company | Plating solutions for electrochemical or chemical deposition of copper interconnects and methods therefor |
US20050072683A1 (en) | 2003-04-03 | 2005-04-07 | Ebara Corporation | Copper plating bath and plating method |
US20050045485A1 (en) | 2003-09-03 | 2005-03-03 | Taiwan Semiconductor Manufacturing Co. Ltd. | Method to improve copper electrochemical deposition |
RU2334831C2 (ru) * | 2006-10-31 | 2008-09-27 | Федеральное государственное унитарное предприятие "Калужский научно-исследовательский институт телемеханических устройств" | Электролит меднения |
JP5503111B2 (ja) * | 2007-04-03 | 2014-05-28 | ローム・アンド・ハース・エレクトロニック・マテリアルズ,エル.エル.シー. | 金属メッキ組成物および方法 |
US8388824B2 (en) * | 2008-11-26 | 2013-03-05 | Enthone Inc. | Method and composition for electrodeposition of copper in microelectronics with dipyridyl-based levelers |
WO2010115796A1 (en) * | 2009-04-07 | 2010-10-14 | Basf Se | Composition for metal plating comprising suppressing agent for void free submicron feature filling |
-
2010
- 2010-03-29 US US13/259,482 patent/US20120027948A1/en not_active Abandoned
- 2010-03-29 RU RU2011144618/02A patent/RU2542178C2/ru not_active IP Right Cessation
- 2010-03-29 EP EP10711239.3A patent/EP2417284B1/en active Active
- 2010-03-29 KR KR1020117026527A patent/KR20120005023A/ko active Application Filing
- 2010-03-29 WO PCT/EP2010/054108 patent/WO2010115756A1/en active Application Filing
- 2010-03-29 SG SG10201401324YA patent/SG10201401324YA/en unknown
- 2010-03-29 KR KR1020177007866A patent/KR20170034948A/ko not_active Application Discontinuation
- 2010-03-29 CN CN201410322845.2A patent/CN104195602B/zh active Active
- 2010-03-29 MY MYPI2011004270A patent/MY157214A/en unknown
- 2010-03-29 JP JP2012503962A patent/JP5702360B2/ja active Active
- 2010-03-29 CN CN201080015460.1A patent/CN102369315B/zh active Active
- 2010-03-29 SG SG2011064094A patent/SG174265A1/en unknown
- 2010-04-06 TW TW099110629A patent/TWI489012B/zh active
-
2011
- 2011-09-07 IL IL215017A patent/IL215017A/en active IP Right Grant
Patent Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2003226892A (ja) * | 2002-02-06 | 2003-08-15 | Dai Ichi Kogyo Seiyaku Co Ltd | 非イオン界面活性剤 |
JP2003328179A (ja) * | 2002-05-10 | 2003-11-19 | Ebara Udylite Kk | 酸性銅めっき浴用添加剤及び該添加剤を含有する酸性銅めっき浴並びに該めっき浴を用いるめっき方法 |
JP2004169072A (ja) * | 2002-11-18 | 2004-06-17 | Ebara Udylite Kk | クローズド酸性銅めっきシステムおよびこれに利用される耐温性酸性銅めっき浴 |
JP2008519908A (ja) * | 2004-11-12 | 2008-06-12 | エントン インコーポレイテッド | マイクロ電子機器における銅電気沈積方法 |
US20060213780A1 (en) * | 2005-03-24 | 2006-09-28 | Taiwan Semiconductor Manufacturing Co., Ltd. | Electroplating composition and method |
JP2012503976A (ja) * | 2008-09-30 | 2012-02-16 | セントロ デ インジエニエリア ジエネテイカ イ バイオテクノロジア | インターロイキン−15活性のペプチドアンタゴニスト |
Cited By (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2014505167A (ja) * | 2010-12-21 | 2014-02-27 | ビーエーエスエフ ソシエタス・ヨーロピア | レベリング剤を含有する金属電解めっき組成物 |
JP2015521237A (ja) * | 2012-05-25 | 2015-07-27 | マクダーミッド アキューメン インコーポレーテッド | 低酸素含有量を有する銅電着物を製造するための添加剤 |
JP2015537250A (ja) * | 2012-11-21 | 2015-12-24 | スリーエム イノベイティブ プロパティズ カンパニー | 光拡散フィルム及びそれを作製する方法 |
JP2014177670A (ja) * | 2013-03-14 | 2014-09-25 | Dainippon Printing Co Ltd | インターポーザー基板の製造方法。 |
JP2016207841A (ja) * | 2015-04-22 | 2016-12-08 | 新光電気工業株式会社 | 配線基板及びその製造方法 |
JP2019536911A (ja) * | 2016-09-22 | 2019-12-19 | マクダーミッド エンソン インコーポレイテッド | マイクロエレクトロニクスにおける銅電着 |
JP2022095629A (ja) * | 2016-09-22 | 2022-06-28 | マクダーミッド エンソン インコーポレイテッド | マイクロエレクトロニクスにおける銅電着 |
JPWO2021200614A1 (ja) * | 2020-04-01 | 2021-10-07 | ||
WO2021200614A1 (ja) * | 2020-04-01 | 2021-10-07 | 住友電気工業株式会社 | フレキシブルプリント配線板及びその製造方法 |
US11871514B2 (en) | 2020-04-01 | 2024-01-09 | Sumitomo Electric Industries, Ltd. | Flexible printed circuit board and method for producing the same |
JP7446331B2 (ja) | 2020-04-01 | 2024-03-08 | 住友電気工業株式会社 | フレキシブルプリント配線板及びその製造方法 |
Also Published As
Publication number | Publication date |
---|---|
US20120027948A1 (en) | 2012-02-02 |
CN102369315B (zh) | 2014-08-13 |
IL215017A0 (en) | 2011-12-01 |
IL215017A (en) | 2016-03-31 |
TWI489012B (zh) | 2015-06-21 |
JP5702360B2 (ja) | 2015-04-15 |
CN102369315A (zh) | 2012-03-07 |
SG10201401324YA (en) | 2014-08-28 |
TW201042096A (en) | 2010-12-01 |
RU2542178C2 (ru) | 2015-02-20 |
CN104195602A (zh) | 2014-12-10 |
KR20120005023A (ko) | 2012-01-13 |
CN104195602B (zh) | 2017-05-31 |
EP2417284B1 (en) | 2015-01-14 |
EP2417284A1 (en) | 2012-02-15 |
KR20170034948A (ko) | 2017-03-29 |
WO2010115756A1 (en) | 2010-10-14 |
MY157214A (en) | 2016-05-13 |
SG174265A1 (en) | 2011-10-28 |
RU2011144618A (ru) | 2013-05-20 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP5702360B2 (ja) | ボイドのないサブミクロンの機構を充填するための、抑制剤を含む金属メッキ用の組成物 | |
US20210317582A1 (en) | Composition for metal plating comprising suppressing agent for void free submicron feature filling | |
US20200173029A1 (en) | Composition for metal plating comprising suppressing agent for void free submicron feature filling | |
JP5714581B2 (ja) | マイクロメーター以下の機構をボイドを形成することなく満たすための抑制剤を含む金属メッキ用組成物 | |
US9011666B2 (en) | Composition for metal electroplating comprising leveling agent | |
WO2010115757A1 (en) | Composition for metal plating comprising suppressing agent for void free submicron feature filling | |
JP2012522897A5 (ja) | ||
WO2018114985A1 (en) | Composition for metal plating comprising suppressing agent for void free filling | |
JP2012522900A5 (ja) |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20130318 |
|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20130318 |
|
A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20131225 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20140128 |
|
A601 | Written request for extension of time |
Free format text: JAPANESE INTERMEDIATE CODE: A601 Effective date: 20140418 |
|
A602 | Written permission of extension of time |
Free format text: JAPANESE INTERMEDIATE CODE: A602 Effective date: 20140425 |
|
A601 | Written request for extension of time |
Free format text: JAPANESE INTERMEDIATE CODE: A601 Effective date: 20140515 |
|
A602 | Written permission of extension of time |
Free format text: JAPANESE INTERMEDIATE CODE: A602 Effective date: 20140522 |
|
A601 | Written request for extension of time |
Free format text: JAPANESE INTERMEDIATE CODE: A601 Effective date: 20140623 |
|
A602 | Written permission of extension of time |
Free format text: JAPANESE INTERMEDIATE CODE: A602 Effective date: 20140630 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20140728 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20150120 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20150219 |
|
R150 | Certificate of patent or registration of utility model |
Ref document number: 5702360 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |