IL215017A - Composition comprising a source of metal ions and a suppressing agent, use thereof for depositing the metal on substrates comprising features having submicron aperture size and a process for such depositing - Google Patents

Composition comprising a source of metal ions and a suppressing agent, use thereof for depositing the metal on substrates comprising features having submicron aperture size and a process for such depositing

Info

Publication number
IL215017A
IL215017A IL215017A IL21501711A IL215017A IL 215017 A IL215017 A IL 215017A IL 215017 A IL215017 A IL 215017A IL 21501711 A IL21501711 A IL 21501711A IL 215017 A IL215017 A IL 215017A
Authority
IL
Israel
Prior art keywords
coating
metal
concealer
source
micron sized
Prior art date
Application number
IL215017A
Other languages
English (en)
Hebrew (he)
Other versions
IL215017A0 (en
Original Assignee
Basf Se
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Basf Se filed Critical Basf Se
Publication of IL215017A0 publication Critical patent/IL215017A0/en
Publication of IL215017A publication Critical patent/IL215017A/en

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
    • C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
    • C23C18/31—Coating with metals
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
    • C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
    • C23C18/31—Coating with metals
    • C23C18/32—Coating with nickel, cobalt or mixtures thereof with phosphorus or boron
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D3/00—Electroplating: Baths therefor
    • C25D3/02—Electroplating: Baths therefor from solutions
    • C25D3/38—Electroplating: Baths therefor from solutions of copper
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D3/00—Electroplating: Baths therefor
    • C25D3/02—Electroplating: Baths therefor from solutions
    • C25D3/56—Electroplating: Baths therefor from solutions of alloys
    • C25D3/58—Electroplating: Baths therefor from solutions of alloys containing more than 50% by weight of copper
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/40—Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials
    • H10P14/46—Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials using a liquid
    • H10P14/47—Electrolytic deposition, i.e. electroplating; Electroless plating
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/031—Manufacture or treatment of conductive parts of the interconnections
    • H10W20/056—Manufacture or treatment of conductive parts of the interconnections by filling conductive material into holes, grooves or trenches
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D7/00—Electroplating characterised by the article coated
    • C25D7/12—Semiconductors
    • C25D7/123—Semiconductors first coated with a seed layer or a conductive layer
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/40—Forming printed elements for providing electric connections to or between printed circuits
    • H05K3/42—Plated through-holes or plated via connections
    • H05K3/423—Plated through-holes or plated via connections characterised by electroplating method

Landscapes

  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Electrochemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Mechanical Engineering (AREA)
  • Electroplating And Plating Baths Therefor (AREA)
  • Electroplating Methods And Accessories (AREA)
IL215017A 2009-04-07 2011-09-07 Composition comprising a source of metal ions and a suppressing agent, use thereof for depositing the metal on substrates comprising features having submicron aperture size and a process for such depositing IL215017A (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
EP09157542 2009-04-07
US25632909P 2009-10-30 2009-10-30
PCT/EP2010/054108 WO2010115756A1 (en) 2009-04-07 2010-03-29 Composition for metal plating comprising suppressing agent for void free submicron feature filling

Publications (2)

Publication Number Publication Date
IL215017A0 IL215017A0 (en) 2011-12-01
IL215017A true IL215017A (en) 2016-03-31

Family

ID=42935667

Family Applications (1)

Application Number Title Priority Date Filing Date
IL215017A IL215017A (en) 2009-04-07 2011-09-07 Composition comprising a source of metal ions and a suppressing agent, use thereof for depositing the metal on substrates comprising features having submicron aperture size and a process for such depositing

Country Status (11)

Country Link
US (1) US20120027948A1 (https=)
EP (1) EP2417284B1 (https=)
JP (1) JP5702360B2 (https=)
KR (2) KR20120005023A (https=)
CN (2) CN104195602B (https=)
IL (1) IL215017A (https=)
MY (1) MY157214A (https=)
RU (1) RU2542178C2 (https=)
SG (2) SG174265A1 (https=)
TW (1) TWI489012B (https=)
WO (1) WO2010115756A1 (https=)

Families Citing this family (28)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI400365B (zh) 2004-11-12 2013-07-01 安頌股份有限公司 微電子裝置上的銅電沈積
SG10201404394QA (en) 2009-07-30 2014-10-30 Basf Se Composition for metal plating comprising suppressing agent for void free submicron feature filing
EP2547731B1 (en) 2010-03-18 2014-07-30 Basf Se Composition for metal electroplating comprising leveling agent
EP2468927A1 (en) 2010-12-21 2012-06-27 Basf Se Composition for metal electroplating comprising leveling agent
EP2655457B1 (en) * 2010-12-21 2019-04-10 Basf Se Composition for metal electroplating comprising leveling agent
CN103547631B (zh) 2011-06-01 2016-07-06 巴斯夫欧洲公司 包含用于自下向上填充硅穿孔和互联件特征的添加剂的金属电镀用组合物
EP2530102A1 (en) 2011-06-01 2012-12-05 Basf Se Additive and composition for metal electroplating comprising an additive for bottom-up filling of though silicon vias
US9243339B2 (en) * 2012-05-25 2016-01-26 Trevor Pearson Additives for producing copper electrodeposits having low oxygen content
RU2015121797A (ru) 2012-11-09 2017-01-10 Басф Се Композиция для электролитического осаждения металла, содержащая выравнивающий агент
KR102159604B1 (ko) * 2012-11-21 2020-09-25 쓰리엠 이노베이티브 프로퍼티즈 컴파니 광학 확산 필름 및 이를 제조하는 방법
JP6216522B2 (ja) * 2013-03-14 2017-10-18 大日本印刷株式会社 インターポーザー基板の製造方法。
JP6457881B2 (ja) * 2015-04-22 2019-01-23 新光電気工業株式会社 配線基板及びその製造方法
JP7039601B2 (ja) * 2016-09-22 2022-03-22 マクダーミッド エンソン インコーポレイテッド マイクロエレクトロニクスにおける銅電着
WO2018073011A1 (en) 2016-10-20 2018-04-26 Basf Se Composition for metal plating comprising suppressing agent for void free submicron feature filling
US11926918B2 (en) * 2016-12-20 2024-03-12 Basf Se Composition for metal plating comprising suppressing agent for void free filing
EP3415664B1 (en) * 2017-06-16 2019-09-18 ATOTECH Deutschland GmbH Aqueous acidic copper electroplating bath and method for electrolytically depositing of a copper coating
US11387108B2 (en) 2017-09-04 2022-07-12 Basf Se Composition for metal electroplating comprising leveling agent
EP3781729B1 (en) * 2018-04-20 2024-09-25 Basf Se Composition for tin or tin alloy electroplating comprising suppressing agent
EP4034696A1 (en) 2019-09-27 2022-08-03 Basf Se Composition for copper bump electrodeposition comprising a leveling agent
CN114450438A (zh) 2019-09-27 2022-05-06 巴斯夫欧洲公司 用于铜凸块电沉积的包含流平剂的组合物
CN114073170B (zh) * 2020-04-01 2025-01-03 住友电气工业株式会社 柔性印刷布线板及其制造方法
JP2023520530A (ja) 2020-04-03 2023-05-17 ビーエーエスエフ ソシエタス・ヨーロピア ポリアミノアミド型レベリング剤を含む銅バンプ電着用組成物
EP3922662A1 (en) 2020-06-10 2021-12-15 Basf Se Polyalkanolamine
KR20240070557A (ko) 2021-10-01 2024-05-21 바스프 에스이 폴리아미노아미드 타입 레벨링제를 포함하는 구리 전착용 조성물
TWI861453B (zh) 2021-12-21 2024-11-11 隆輝實業股份有限公司 環保無廢料的發泡鞋材製程方法，及其鞋材半成品與鞋體成品
US20250388725A1 (en) 2022-07-07 2025-12-25 Basf Se Use of a composition comprising a polyaminoamide type compound for copper nanotwin electrodeposition
US12557666B2 (en) * 2022-11-28 2026-02-17 Taiwan Semiconductor Manufacturing Company, Ltd. Method of manufacturing conductive structure, method of manufacturing redistribution circuit structure and method of manufacturing semiconductor package
WO2024132828A1 (en) 2022-12-19 2024-06-27 Basf Se A composition for copper nanotwin electrodeposition

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WO2010115796A1 (en) * 2009-04-07 2010-10-14 Basf Se Composition for metal plating comprising suppressing agent for void free submicron feature filling

Also Published As

Publication number Publication date
CN104195602A (zh) 2014-12-10
WO2010115756A1 (en) 2010-10-14
IL215017A0 (en) 2011-12-01
RU2011144618A (ru) 2013-05-20
MY157214A (en) 2016-05-13
TW201042096A (en) 2010-12-01
CN102369315B (zh) 2014-08-13
US20120027948A1 (en) 2012-02-02
EP2417284A1 (en) 2012-02-15
KR20170034948A (ko) 2017-03-29
SG10201401324YA (en) 2014-08-28
SG174265A1 (en) 2011-10-28
TWI489012B (zh) 2015-06-21
RU2542178C2 (ru) 2015-02-20
KR20120005023A (ko) 2012-01-13
EP2417284B1 (en) 2015-01-14
CN102369315A (zh) 2012-03-07
CN104195602B (zh) 2017-05-31
JP2012522898A (ja) 2012-09-27
JP5702360B2 (ja) 2015-04-15

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