JP2012518812A5 - - Google Patents
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- Publication number
- JP2012518812A5 JP2012518812A5 JP2011551236A JP2011551236A JP2012518812A5 JP 2012518812 A5 JP2012518812 A5 JP 2012518812A5 JP 2011551236 A JP2011551236 A JP 2011551236A JP 2011551236 A JP2011551236 A JP 2011551236A JP 2012518812 A5 JP2012518812 A5 JP 2012518812A5
- Authority
- JP
- Japan
- Prior art keywords
- layer
- group
- antireflective
- composition
- adamantyl
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- LZCLXQDLBQLTDK-UHFFFAOYSA-N ethyl 2-hydroxypropanoate Chemical compound CCOC(=O)C(C)O LZCLXQDLBQLTDK-UHFFFAOYSA-N 0.000 claims description 10
- 239000002904 solvent Substances 0.000 claims description 9
- 229940116333 ethyl lactate Drugs 0.000 claims description 5
- 229920002120 photoresistant polymer Polymers 0.000 claims description 4
- 238000000572 ellipsometry Methods 0.000 claims description 2
- 239000007788 liquid Substances 0.000 claims description 2
- 239000000203 mixture Substances 0.000 claims 17
- 230000003667 anti-reflective effect Effects 0.000 claims 16
- 238000000034 method Methods 0.000 claims 11
- 229920000642 polymer Polymers 0.000 claims 10
- 239000002253 acid Substances 0.000 claims 9
- 125000005073 adamantyl group Chemical group C12(CC3CC(CC(C1)C3)C2)* 0.000 claims 7
- 239000000178 monomer Substances 0.000 claims 5
- 239000000758 substrate Substances 0.000 claims 5
- QYKIQEUNHZKYBP-UHFFFAOYSA-N Vinyl ether Chemical compound C=COC=C QYKIQEUNHZKYBP-UHFFFAOYSA-N 0.000 claims 4
- 125000000217 alkyl group Chemical group 0.000 claims 3
- 238000004132 cross linking Methods 0.000 claims 3
- ARXJGSRGQADJSQ-UHFFFAOYSA-N 1-methoxypropan-2-ol Chemical compound COCC(C)O ARXJGSRGQADJSQ-UHFFFAOYSA-N 0.000 claims 2
- YEJRWHAVMIAJKC-UHFFFAOYSA-N 4-Butyrolactone Chemical compound O=C1CCCO1 YEJRWHAVMIAJKC-UHFFFAOYSA-N 0.000 claims 2
- 239000004971 Cross linker Substances 0.000 claims 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims 2
- PPBRXRYQALVLMV-UHFFFAOYSA-N Styrene Chemical compound C=CC1=CC=CC=C1 PPBRXRYQALVLMV-UHFFFAOYSA-N 0.000 claims 2
- -1 adamantyl acrylates Chemical class 0.000 claims 2
- 125000003178 carboxy group Chemical group [H]OC(*)=O 0.000 claims 2
- 150000001875 compounds Chemical class 0.000 claims 2
- 125000004122 cyclic group Chemical group 0.000 claims 2
- JHIVVAPYMSGYDF-UHFFFAOYSA-N cyclohexanone Chemical compound O=C1CCCCC1 JHIVVAPYMSGYDF-UHFFFAOYSA-N 0.000 claims 2
- 125000005395 methacrylic acid group Chemical group 0.000 claims 2
- 238000004377 microelectronic Methods 0.000 claims 2
- 230000005855 radiation Effects 0.000 claims 2
- 229910052710 silicon Inorganic materials 0.000 claims 2
- 239000010703 silicon Substances 0.000 claims 2
- FENFUOGYJVOCRY-UHFFFAOYSA-N 1-propoxypropan-2-ol Chemical compound CCCOCC(C)O FENFUOGYJVOCRY-UHFFFAOYSA-N 0.000 claims 1
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 claims 1
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 claims 1
- 235000014653 Carica parviflora Nutrition 0.000 claims 1
- 241000243321 Cnidaria Species 0.000 claims 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 claims 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims 1
- 229910004298 SiO 2 Inorganic materials 0.000 claims 1
- 229910000577 Silicon-germanium Inorganic materials 0.000 claims 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims 1
- 229920006397 acrylic thermoplastic Polymers 0.000 claims 1
- 229910052782 aluminium Inorganic materials 0.000 claims 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims 1
- 229910052796 boron Inorganic materials 0.000 claims 1
- 230000008878 coupling Effects 0.000 claims 1
- 238000010168 coupling process Methods 0.000 claims 1
- 238000005859 coupling reaction Methods 0.000 claims 1
- 239000003431 cross linking reagent Substances 0.000 claims 1
- 125000004966 cyanoalkyl group Chemical group 0.000 claims 1
- 239000010432 diamond Substances 0.000 claims 1
- 229910052732 germanium Inorganic materials 0.000 claims 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 claims 1
- 239000011521 glass Substances 0.000 claims 1
- 229910000449 hafnium oxide Inorganic materials 0.000 claims 1
- WIHZLLGSGQNAGK-UHFFFAOYSA-N hafnium(4+);oxygen(2-) Chemical compound [O-2].[O-2].[Hf+4] WIHZLLGSGQNAGK-UHFFFAOYSA-N 0.000 claims 1
- 238000005468 ion implantation Methods 0.000 claims 1
- 150000004767 nitrides Chemical class 0.000 claims 1
- 229910052698 phosphorus Inorganic materials 0.000 claims 1
- 239000011574 phosphorus Substances 0.000 claims 1
- 229920003229 poly(methyl methacrylate) Polymers 0.000 claims 1
- 229920000058 polyacrylate Polymers 0.000 claims 1
- 238000006116 polymerization reaction Methods 0.000 claims 1
- LLHKCFNBLRBOGN-UHFFFAOYSA-N propylene glycol methyl ether acetate Chemical compound COCC(C)OC(C)=O LLHKCFNBLRBOGN-UHFFFAOYSA-N 0.000 claims 1
- 229910052715 tantalum Inorganic materials 0.000 claims 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 claims 1
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 claims 1
- ISXSCDLOGDJUNJ-UHFFFAOYSA-N tert-butyl prop-2-enoate Chemical compound CC(C)(C)OC(=O)C=C ISXSCDLOGDJUNJ-UHFFFAOYSA-N 0.000 claims 1
- 229910052719 titanium Inorganic materials 0.000 claims 1
- 239000010936 titanium Substances 0.000 claims 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims 1
- 229910052721 tungsten Inorganic materials 0.000 claims 1
- 239000010937 tungsten Substances 0.000 claims 1
- WQJQOUPTWCFRMM-UHFFFAOYSA-N tungsten disilicide Chemical compound [Si]#[W]#[Si] WQJQOUPTWCFRMM-UHFFFAOYSA-N 0.000 claims 1
- 229910021342 tungsten silicide Inorganic materials 0.000 claims 1
- 229920002554 vinyl polymer Polymers 0.000 claims 1
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US15390909P | 2009-02-19 | 2009-02-19 | |
| US61/153,909 | 2009-02-19 | ||
| PCT/US2010/024664 WO2010096615A2 (en) | 2009-02-19 | 2010-02-19 | Acid-sensitive, developer-soluble bottom anti-reflective coatings |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2012518812A JP2012518812A (ja) | 2012-08-16 |
| JP2012518812A5 true JP2012518812A5 (https=) | 2015-04-23 |
| JP5840954B2 JP5840954B2 (ja) | 2016-01-06 |
Family
ID=42630241
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2011551236A Active JP5840954B2 (ja) | 2009-02-19 | 2010-02-19 | 酸感応性、現像剤可溶性の下層反射防止膜 |
Country Status (8)
| Country | Link |
|---|---|
| US (1) | US8383318B2 (https=) |
| EP (1) | EP2399169B1 (https=) |
| JP (1) | JP5840954B2 (https=) |
| KR (1) | KR101668505B1 (https=) |
| CN (1) | CN102395925B (https=) |
| SG (1) | SG173730A1 (https=) |
| TW (1) | TWI524151B (https=) |
| WO (1) | WO2010096615A2 (https=) |
Families Citing this family (25)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104137235B (zh) | 2012-01-19 | 2017-02-22 | 布鲁尔科技公司 | 含金刚烷基的非聚合物减反射组合物 |
| US9261786B2 (en) | 2012-04-02 | 2016-02-16 | Taiwan Semiconductor Manufacturing Company, Ltd. | Photosensitive material and method of photolithography |
| WO2013163100A1 (en) | 2012-04-23 | 2013-10-31 | Brewer Science Inc. | Photosensitive, developer-soluble bottom anti-reflective coating material |
| US9213234B2 (en) | 2012-06-01 | 2015-12-15 | Taiwan Semiconductor Manufacturing Company, Ltd. | Photosensitive material and method of lithography |
| US9012132B2 (en) | 2013-01-02 | 2015-04-21 | Taiwan Semiconductor Manufacturing Company, Ltd. | Coating material and method for photolithography |
| US9159559B2 (en) * | 2013-03-11 | 2015-10-13 | Taiwan Semiconductor Manufacturing Company, Ltd. | Lithography layer with quenchers to prevent pattern collapse |
| US9146469B2 (en) | 2013-03-14 | 2015-09-29 | Taiwan Semiconductor Manufacturing Company, Ltd. | Middle layer composition for trilayer patterning stack |
| KR20160083080A (ko) * | 2013-11-08 | 2016-07-11 | 도쿄엘렉트론가부시키가이샤 | 화학적 폴리싱 및 평탄화를 위한 방법 |
| TWI575566B (zh) | 2014-02-24 | 2017-03-21 | 東京威力科創股份有限公司 | 與光敏化化學放大光阻化學品及程序一起使用的方法及技術 |
| US10020195B2 (en) * | 2014-02-25 | 2018-07-10 | Tokyo Electron Limited | Chemical amplification methods and techniques for developable bottom anti-reflective coatings and dyed implant resists |
| JP6509496B2 (ja) * | 2014-04-08 | 2019-05-08 | アーゼッド・エレクトロニック・マテリアルズ（ルクセンブルグ）ソシエテ・ア・レスポンサビリテ・リミテ | 下層膜形成用組成物 |
| US9754791B2 (en) * | 2015-02-07 | 2017-09-05 | Applied Materials, Inc. | Selective deposition utilizing masks and directional plasma treatment |
| KR102374049B1 (ko) * | 2015-06-02 | 2022-03-14 | 삼성전자주식회사 | 포토레지스트를 이용한 패턴 형성 방법 |
| KR102697916B1 (ko) | 2016-02-15 | 2024-08-23 | 제이에스알 가부시끼가이샤 | 레지스트 하층막 형성용 조성물, 레지스트 하층막 및 패터닝된 기판의 제조 방법 |
| US10048594B2 (en) | 2016-02-19 | 2018-08-14 | Tokyo Electron Limited | Photo-sensitized chemically amplified resist (PS-CAR) model calibration |
| US10429745B2 (en) | 2016-02-19 | 2019-10-01 | Osaka University | Photo-sensitized chemically amplified resist (PS-CAR) simulation |
| CN109313395B (zh) | 2016-05-13 | 2021-05-14 | 东京毅力科创株式会社 | 通过使用光剂来进行的临界尺寸控制 |
| WO2017197279A1 (en) | 2016-05-13 | 2017-11-16 | Tokyo Electron Limited | Critical dimension control by use of photo-sensitized chemicals or photo-sensitized chemically amplified resist |
| JP7410943B2 (ja) * | 2018-11-02 | 2024-01-10 | ブルーワー サイエンス アイ エヌ シー． | Ｐａｇが固定された表面上でのボトムアップ絶縁保護コーティングおよびフォトパターニング |
| KR102751329B1 (ko) | 2019-03-28 | 2025-01-07 | 삼성전자주식회사 | 반사방지막 형성용 폴리머 및 조성물과 반사방지막을 이용하는 집적회로 소자의 제조 방법 |
| DE102019134535B4 (de) | 2019-08-05 | 2023-09-07 | Taiwan Semiconductor Manufacturing Co., Ltd. | Materialien für unteren antireflexbelag |
| US11782345B2 (en) | 2019-08-05 | 2023-10-10 | Taiwan Semiconductor Manufacturing Co., Ltd. | Bottom antireflective coating materials |
| KR102898764B1 (ko) | 2019-08-16 | 2025-12-10 | 도쿄엘렉트론가부시키가이샤 | 확률 중심 결함 교정을 위한 방법 및 공정 |
| US12512430B2 (en) * | 2022-06-28 | 2025-12-30 | Dupont Electronic Materials International, Llc | Metallization method |
| US12572076B2 (en) * | 2022-11-28 | 2026-03-10 | Rohm And Haas Electronic Materials Korea Ltd | Photoresist underlayer composition |
Family Cites Families (23)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0053621B1 (en) | 1980-06-11 | 1984-07-25 | Battelle Memorial Institute | Unsaturated esters of adamantane containing diols and thermo-resistant cross-linked polymers therefrom |
| US6054254A (en) | 1997-07-03 | 2000-04-25 | Kabushiki Kaisha Toshiba | Composition for underlying film and method of forming a pattern using the film |
| JPH1172925A (ja) * | 1997-07-03 | 1999-03-16 | Toshiba Corp | 下層膜用組成物およびこれを用いたパターン形成方法 |
| US6844131B2 (en) * | 2002-01-09 | 2005-01-18 | Clariant Finance (Bvi) Limited | Positive-working photoimageable bottom antireflective coating |
| JP4344212B2 (ja) * | 2003-10-16 | 2009-10-14 | 丸善石油化学株式会社 | 共重合体、共重合体の製造方法及び新規チオール化合物 |
| JP2005234168A (ja) * | 2004-02-19 | 2005-09-02 | Daicel Chem Ind Ltd | 反射防止膜形成用樹脂組成物、反射防止膜の形成方法及び半導体の製造方法 |
| US20050214674A1 (en) | 2004-03-25 | 2005-09-29 | Yu Sui | Positive-working photoimageable bottom antireflective coating |
| US20050255410A1 (en) * | 2004-04-29 | 2005-11-17 | Guerrero Douglas J | Anti-reflective coatings using vinyl ether crosslinkers |
| JP2006089412A (ja) | 2004-09-24 | 2006-04-06 | Idemitsu Kosan Co Ltd | アダマンタン誘導体、その製造方法及びフォトレジスト用感光材料 |
| JP4575214B2 (ja) * | 2005-04-04 | 2010-11-04 | 信越化学工業株式会社 | レジスト下層膜材料およびパターン形成方法 |
| EP1720072B1 (en) | 2005-05-01 | 2019-06-05 | Rohm and Haas Electronic Materials, L.L.C. | Compositons and processes for immersion lithography |
| US20070105040A1 (en) * | 2005-11-10 | 2007-05-10 | Toukhy Medhat A | Developable undercoating composition for thick photoresist layers |
| US7919222B2 (en) * | 2006-01-29 | 2011-04-05 | Rohm And Haas Electronics Materials Llc | Coating compositions for use with an overcoated photoresist |
| EP1845416A3 (en) * | 2006-04-11 | 2009-05-20 | Rohm and Haas Electronic Materials, L.L.C. | Coating compositions for photolithography |
| US8455178B2 (en) * | 2006-09-26 | 2013-06-04 | Rohm And Haas Electronic Materials Llp | Coating compositions for photolithography |
| WO2008072624A1 (ja) * | 2006-12-13 | 2008-06-19 | Nissan Chemical Industries, Ltd. | 低分子溶解促進剤を含むレジスト下層膜形成組成物 |
| US7838199B2 (en) * | 2007-02-28 | 2010-11-23 | Rohm And Haas Electronic Materials Llc | Polymers and photoresist compositions |
| JP5106911B2 (ja) * | 2007-04-13 | 2012-12-26 | 株式会社ダイセル | 重合体及びそれを用いた反射防止膜形成組成物 |
| US20090098490A1 (en) * | 2007-10-16 | 2009-04-16 | Victor Pham | Radiation-Sensitive, Wet Developable Bottom Antireflective Coating Compositions and Their Applications in Semiconductor Manufacturing |
| US8088548B2 (en) | 2007-10-23 | 2012-01-03 | Az Electronic Materials Usa Corp. | Bottom antireflective coating compositions |
| US9638999B2 (en) * | 2008-02-22 | 2017-05-02 | Brewer Science Inc. | Dual-layer light-sensitive developer-soluble bottom anti-reflective coatings for 193-nm lithography |
| JP2010113035A (ja) * | 2008-11-04 | 2010-05-20 | Daicel Chem Ind Ltd | 下層膜用重合体、下層膜用組成物及び半導体の製造方法 |
| US8455176B2 (en) | 2008-11-12 | 2013-06-04 | Az Electronic Materials Usa Corp. | Coating composition |
-
2010
- 2010-02-19 EP EP10744334.3A patent/EP2399169B1/en active Active
- 2010-02-19 JP JP2011551236A patent/JP5840954B2/ja active Active
- 2010-02-19 KR KR1020117021875A patent/KR101668505B1/ko active Active
- 2010-02-19 SG SG2011059177A patent/SG173730A1/en unknown
- 2010-02-19 WO PCT/US2010/024664 patent/WO2010096615A2/en not_active Ceased
- 2010-02-19 CN CN201080008975.9A patent/CN102395925B/zh active Active
- 2010-02-19 US US12/708,630 patent/US8383318B2/en active Active
- 2010-02-22 TW TW099104952A patent/TWI524151B/zh active
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