TWI524151B - 酸敏感顯影劑可溶之底部抗反射塗層 - Google Patents
酸敏感顯影劑可溶之底部抗反射塗層 Download PDFInfo
- Publication number
- TWI524151B TWI524151B TW099104952A TW99104952A TWI524151B TW I524151 B TWI524151 B TW I524151B TW 099104952 A TW099104952 A TW 099104952A TW 99104952 A TW99104952 A TW 99104952A TW I524151 B TWI524151 B TW I524151B
- Authority
- TW
- Taiwan
- Prior art keywords
- group
- layer
- composition
- reflective coating
- terpolymer
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography
- H10P76/20—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials
- H10P76/204—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials of organic photoresist masks
- H10P76/2041—Photolithographic processes
- H10P76/2043—Photolithographic processes using an anti-reflective coating
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
- G03F7/091—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers characterised by antireflection means or light filtering or absorbing means, e.g. anti-halation, contrast enhancement
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
- G03F7/11—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers having cover layers or intermediate layers, e.g. subbing layers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography
- H10P76/20—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials
- H10P76/204—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials of organic photoresist masks
Landscapes
- Engineering & Computer Science (AREA)
- Architecture (AREA)
- Structural Engineering (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Materials For Photolithography (AREA)
- Addition Polymer Or Copolymer, Post-Treatments, Or Chemical Modifications (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US15390909P | 2009-02-19 | 2009-02-19 | |
| US12/708,630 US8383318B2 (en) | 2009-02-19 | 2010-02-19 | Acid-sensitive, developer-soluble bottom anti-reflective coatings |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW201035690A TW201035690A (en) | 2010-10-01 |
| TWI524151B true TWI524151B (zh) | 2016-03-01 |
Family
ID=42630241
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW099104952A TWI524151B (zh) | 2009-02-19 | 2010-02-22 | 酸敏感顯影劑可溶之底部抗反射塗層 |
Country Status (8)
| Country | Link |
|---|---|
| US (1) | US8383318B2 (https=) |
| EP (1) | EP2399169B1 (https=) |
| JP (1) | JP5840954B2 (https=) |
| KR (1) | KR101668505B1 (https=) |
| CN (1) | CN102395925B (https=) |
| SG (1) | SG173730A1 (https=) |
| TW (1) | TWI524151B (https=) |
| WO (1) | WO2010096615A2 (https=) |
Families Citing this family (25)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104137235B (zh) | 2012-01-19 | 2017-02-22 | 布鲁尔科技公司 | 含金刚烷基的非聚合物减反射组合物 |
| US9261786B2 (en) | 2012-04-02 | 2016-02-16 | Taiwan Semiconductor Manufacturing Company, Ltd. | Photosensitive material and method of photolithography |
| WO2013163100A1 (en) | 2012-04-23 | 2013-10-31 | Brewer Science Inc. | Photosensitive, developer-soluble bottom anti-reflective coating material |
| US9213234B2 (en) | 2012-06-01 | 2015-12-15 | Taiwan Semiconductor Manufacturing Company, Ltd. | Photosensitive material and method of lithography |
| US9012132B2 (en) | 2013-01-02 | 2015-04-21 | Taiwan Semiconductor Manufacturing Company, Ltd. | Coating material and method for photolithography |
| US9159559B2 (en) * | 2013-03-11 | 2015-10-13 | Taiwan Semiconductor Manufacturing Company, Ltd. | Lithography layer with quenchers to prevent pattern collapse |
| US9146469B2 (en) | 2013-03-14 | 2015-09-29 | Taiwan Semiconductor Manufacturing Company, Ltd. | Middle layer composition for trilayer patterning stack |
| KR20160083080A (ko) * | 2013-11-08 | 2016-07-11 | 도쿄엘렉트론가부시키가이샤 | 화학적 폴리싱 및 평탄화를 위한 방법 |
| TWI575566B (zh) | 2014-02-24 | 2017-03-21 | 東京威力科創股份有限公司 | 與光敏化化學放大光阻化學品及程序一起使用的方法及技術 |
| US10020195B2 (en) * | 2014-02-25 | 2018-07-10 | Tokyo Electron Limited | Chemical amplification methods and techniques for developable bottom anti-reflective coatings and dyed implant resists |
| JP6509496B2 (ja) * | 2014-04-08 | 2019-05-08 | アーゼッド・エレクトロニック・マテリアルズ（ルクセンブルグ）ソシエテ・ア・レスポンサビリテ・リミテ | 下層膜形成用組成物 |
| US9754791B2 (en) * | 2015-02-07 | 2017-09-05 | Applied Materials, Inc. | Selective deposition utilizing masks and directional plasma treatment |
| KR102374049B1 (ko) * | 2015-06-02 | 2022-03-14 | 삼성전자주식회사 | 포토레지스트를 이용한 패턴 형성 방법 |
| KR102697916B1 (ko) | 2016-02-15 | 2024-08-23 | 제이에스알 가부시끼가이샤 | 레지스트 하층막 형성용 조성물, 레지스트 하층막 및 패터닝된 기판의 제조 방법 |
| US10048594B2 (en) | 2016-02-19 | 2018-08-14 | Tokyo Electron Limited | Photo-sensitized chemically amplified resist (PS-CAR) model calibration |
| US10429745B2 (en) | 2016-02-19 | 2019-10-01 | Osaka University | Photo-sensitized chemically amplified resist (PS-CAR) simulation |
| CN109313395B (zh) | 2016-05-13 | 2021-05-14 | 东京毅力科创株式会社 | 通过使用光剂来进行的临界尺寸控制 |
| WO2017197279A1 (en) | 2016-05-13 | 2017-11-16 | Tokyo Electron Limited | Critical dimension control by use of photo-sensitized chemicals or photo-sensitized chemically amplified resist |
| JP7410943B2 (ja) * | 2018-11-02 | 2024-01-10 | ブルーワー サイエンス アイ エヌ シー． | Ｐａｇが固定された表面上でのボトムアップ絶縁保護コーティングおよびフォトパターニング |
| KR102751329B1 (ko) | 2019-03-28 | 2025-01-07 | 삼성전자주식회사 | 반사방지막 형성용 폴리머 및 조성물과 반사방지막을 이용하는 집적회로 소자의 제조 방법 |
| DE102019134535B4 (de) | 2019-08-05 | 2023-09-07 | Taiwan Semiconductor Manufacturing Co., Ltd. | Materialien für unteren antireflexbelag |
| US11782345B2 (en) | 2019-08-05 | 2023-10-10 | Taiwan Semiconductor Manufacturing Co., Ltd. | Bottom antireflective coating materials |
| KR102898764B1 (ko) | 2019-08-16 | 2025-12-10 | 도쿄엘렉트론가부시키가이샤 | 확률 중심 결함 교정을 위한 방법 및 공정 |
| US12512430B2 (en) * | 2022-06-28 | 2025-12-30 | Dupont Electronic Materials International, Llc | Metallization method |
| US12572076B2 (en) * | 2022-11-28 | 2026-03-10 | Rohm And Haas Electronic Materials Korea Ltd | Photoresist underlayer composition |
Family Cites Families (23)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0053621B1 (en) | 1980-06-11 | 1984-07-25 | Battelle Memorial Institute | Unsaturated esters of adamantane containing diols and thermo-resistant cross-linked polymers therefrom |
| US6054254A (en) | 1997-07-03 | 2000-04-25 | Kabushiki Kaisha Toshiba | Composition for underlying film and method of forming a pattern using the film |
| JPH1172925A (ja) * | 1997-07-03 | 1999-03-16 | Toshiba Corp | 下層膜用組成物およびこれを用いたパターン形成方法 |
| US6844131B2 (en) * | 2002-01-09 | 2005-01-18 | Clariant Finance (Bvi) Limited | Positive-working photoimageable bottom antireflective coating |
| JP4344212B2 (ja) * | 2003-10-16 | 2009-10-14 | 丸善石油化学株式会社 | 共重合体、共重合体の製造方法及び新規チオール化合物 |
| JP2005234168A (ja) * | 2004-02-19 | 2005-09-02 | Daicel Chem Ind Ltd | 反射防止膜形成用樹脂組成物、反射防止膜の形成方法及び半導体の製造方法 |
| US20050214674A1 (en) | 2004-03-25 | 2005-09-29 | Yu Sui | Positive-working photoimageable bottom antireflective coating |
| US20050255410A1 (en) * | 2004-04-29 | 2005-11-17 | Guerrero Douglas J | Anti-reflective coatings using vinyl ether crosslinkers |
| JP2006089412A (ja) | 2004-09-24 | 2006-04-06 | Idemitsu Kosan Co Ltd | アダマンタン誘導体、その製造方法及びフォトレジスト用感光材料 |
| JP4575214B2 (ja) * | 2005-04-04 | 2010-11-04 | 信越化学工業株式会社 | レジスト下層膜材料およびパターン形成方法 |
| EP1720072B1 (en) | 2005-05-01 | 2019-06-05 | Rohm and Haas Electronic Materials, L.L.C. | Compositons and processes for immersion lithography |
| US20070105040A1 (en) * | 2005-11-10 | 2007-05-10 | Toukhy Medhat A | Developable undercoating composition for thick photoresist layers |
| US7919222B2 (en) * | 2006-01-29 | 2011-04-05 | Rohm And Haas Electronics Materials Llc | Coating compositions for use with an overcoated photoresist |
| EP1845416A3 (en) * | 2006-04-11 | 2009-05-20 | Rohm and Haas Electronic Materials, L.L.C. | Coating compositions for photolithography |
| US8455178B2 (en) * | 2006-09-26 | 2013-06-04 | Rohm And Haas Electronic Materials Llp | Coating compositions for photolithography |
| WO2008072624A1 (ja) * | 2006-12-13 | 2008-06-19 | Nissan Chemical Industries, Ltd. | 低分子溶解促進剤を含むレジスト下層膜形成組成物 |
| US7838199B2 (en) * | 2007-02-28 | 2010-11-23 | Rohm And Haas Electronic Materials Llc | Polymers and photoresist compositions |
| JP5106911B2 (ja) * | 2007-04-13 | 2012-12-26 | 株式会社ダイセル | 重合体及びそれを用いた反射防止膜形成組成物 |
| US20090098490A1 (en) * | 2007-10-16 | 2009-04-16 | Victor Pham | Radiation-Sensitive, Wet Developable Bottom Antireflective Coating Compositions and Their Applications in Semiconductor Manufacturing |
| US8088548B2 (en) | 2007-10-23 | 2012-01-03 | Az Electronic Materials Usa Corp. | Bottom antireflective coating compositions |
| US9638999B2 (en) * | 2008-02-22 | 2017-05-02 | Brewer Science Inc. | Dual-layer light-sensitive developer-soluble bottom anti-reflective coatings for 193-nm lithography |
| JP2010113035A (ja) * | 2008-11-04 | 2010-05-20 | Daicel Chem Ind Ltd | 下層膜用重合体、下層膜用組成物及び半導体の製造方法 |
| US8455176B2 (en) | 2008-11-12 | 2013-06-04 | Az Electronic Materials Usa Corp. | Coating composition |
-
2010
- 2010-02-19 EP EP10744334.3A patent/EP2399169B1/en active Active
- 2010-02-19 JP JP2011551236A patent/JP5840954B2/ja active Active
- 2010-02-19 KR KR1020117021875A patent/KR101668505B1/ko active Active
- 2010-02-19 SG SG2011059177A patent/SG173730A1/en unknown
- 2010-02-19 WO PCT/US2010/024664 patent/WO2010096615A2/en not_active Ceased
- 2010-02-19 CN CN201080008975.9A patent/CN102395925B/zh active Active
- 2010-02-19 US US12/708,630 patent/US8383318B2/en active Active
- 2010-02-22 TW TW099104952A patent/TWI524151B/zh active
Also Published As
| Publication number | Publication date |
|---|---|
| TW201035690A (en) | 2010-10-01 |
| EP2399169A2 (en) | 2011-12-28 |
| EP2399169A4 (en) | 2012-10-10 |
| JP2012518812A (ja) | 2012-08-16 |
| KR101668505B1 (ko) | 2016-10-28 |
| CN102395925B (zh) | 2015-06-03 |
| SG173730A1 (en) | 2011-09-29 |
| KR20110137316A (ko) | 2011-12-22 |
| CN102395925A (zh) | 2012-03-28 |
| EP2399169B1 (en) | 2019-04-17 |
| WO2010096615A2 (en) | 2010-08-26 |
| US20100213580A1 (en) | 2010-08-26 |
| JP5840954B2 (ja) | 2016-01-06 |
| US8383318B2 (en) | 2013-02-26 |
| WO2010096615A3 (en) | 2010-12-09 |
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