KR101668505B1 - 산-민감성, 현상제-용해성 바닥부 반사방지 코팅 - Google Patents

산-민감성, 현상제-용해성 바닥부 반사방지 코팅 Download PDF

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KR101668505B1
KR101668505B1 KR1020117021875A KR20117021875A KR101668505B1 KR 101668505 B1 KR101668505 B1 KR 101668505B1 KR 1020117021875 A KR1020117021875 A KR 1020117021875A KR 20117021875 A KR20117021875 A KR 20117021875A KR 101668505 B1 KR101668505 B1 KR 101668505B1
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antireflective
layer
group
composition
polymer
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KR20110137316A (ko
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짐 디. 메도
조이스 에이. 로웨스
라밀-마르셀로 엘. 메르카도
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브레우어 사이언스 인코포레이션
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography
    • H10P76/20—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials
    • H10P76/204—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials of organic photoresist masks
    • H10P76/2041—Photolithographic processes
    • H10P76/2043—Photolithographic processes using an anti-reflective coating
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • G03F7/091—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers characterised by antireflection means or light filtering or absorbing means, e.g. anti-halation, contrast enhancement
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • G03F7/11—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers having cover layers or intermediate layers, e.g. subbing layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography
    • H10P76/20—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials
    • H10P76/204—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials of organic photoresist masks

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  • Engineering & Computer Science (AREA)
  • Architecture (AREA)
  • Structural Engineering (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Materials For Photolithography (AREA)
  • Addition Polymer Or Copolymer, Post-Treatments, Or Chemical Modifications (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
KR1020117021875A 2009-02-19 2010-02-19 산-민감성, 현상제-용해성 바닥부 반사방지 코팅 Active KR101668505B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US15390909P 2009-02-19 2009-02-19
US61/153,909 2009-02-19
PCT/US2010/024664 WO2010096615A2 (en) 2009-02-19 2010-02-19 Acid-sensitive, developer-soluble bottom anti-reflective coatings

Publications (2)

Publication Number Publication Date
KR20110137316A KR20110137316A (ko) 2011-12-22
KR101668505B1 true KR101668505B1 (ko) 2016-10-28

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Country Link
US (1) US8383318B2 (https=)
EP (1) EP2399169B1 (https=)
JP (1) JP5840954B2 (https=)
KR (1) KR101668505B1 (https=)
CN (1) CN102395925B (https=)
SG (1) SG173730A1 (https=)
TW (1) TWI524151B (https=)
WO (1) WO2010096615A2 (https=)

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CN104137235B (zh) 2012-01-19 2017-02-22 布鲁尔科技公司 含金刚烷基的非聚合物减反射组合物
US9261786B2 (en) 2012-04-02 2016-02-16 Taiwan Semiconductor Manufacturing Company, Ltd. Photosensitive material and method of photolithography
WO2013163100A1 (en) 2012-04-23 2013-10-31 Brewer Science Inc. Photosensitive, developer-soluble bottom anti-reflective coating material
US9213234B2 (en) 2012-06-01 2015-12-15 Taiwan Semiconductor Manufacturing Company, Ltd. Photosensitive material and method of lithography
US9012132B2 (en) 2013-01-02 2015-04-21 Taiwan Semiconductor Manufacturing Company, Ltd. Coating material and method for photolithography
US9159559B2 (en) * 2013-03-11 2015-10-13 Taiwan Semiconductor Manufacturing Company, Ltd. Lithography layer with quenchers to prevent pattern collapse
US9146469B2 (en) 2013-03-14 2015-09-29 Taiwan Semiconductor Manufacturing Company, Ltd. Middle layer composition for trilayer patterning stack
KR20160083080A (ko) * 2013-11-08 2016-07-11 도쿄엘렉트론가부시키가이샤 화학적 폴리싱 및 평탄화를 위한 방법
TWI575566B (zh) 2014-02-24 2017-03-21 東京威力科創股份有限公司 與光敏化化學放大光阻化學品及程序一起使用的方法及技術
US10020195B2 (en) * 2014-02-25 2018-07-10 Tokyo Electron Limited Chemical amplification methods and techniques for developable bottom anti-reflective coatings and dyed implant resists
JP6509496B2 (ja) * 2014-04-08 2019-05-08 アーゼッド・エレクトロニック・マテリアルズ（ルクセンブルグ）ソシエテ・ア・レスポンサビリテ・リミテ 下層膜形成用組成物
US9754791B2 (en) * 2015-02-07 2017-09-05 Applied Materials, Inc. Selective deposition utilizing masks and directional plasma treatment
KR102374049B1 (ko) * 2015-06-02 2022-03-14 삼성전자주식회사 포토레지스트를 이용한 패턴 형성 방법
KR102697916B1 (ko) 2016-02-15 2024-08-23 제이에스알 가부시끼가이샤 레지스트 하층막 형성용 조성물, 레지스트 하층막 및 패터닝된 기판의 제조 방법
US10048594B2 (en) 2016-02-19 2018-08-14 Tokyo Electron Limited Photo-sensitized chemically amplified resist (PS-CAR) model calibration
US10429745B2 (en) 2016-02-19 2019-10-01 Osaka University Photo-sensitized chemically amplified resist (PS-CAR) simulation
CN109313395B (zh) 2016-05-13 2021-05-14 东京毅力科创株式会社 通过使用光剂来进行的临界尺寸控制
WO2017197279A1 (en) 2016-05-13 2017-11-16 Tokyo Electron Limited Critical dimension control by use of photo-sensitized chemicals or photo-sensitized chemically amplified resist
JP7410943B2 (ja) * 2018-11-02 2024-01-10 ブルーワー サイエンス アイ エヌ シー． Ｐａｇが固定された表面上でのボトムアップ絶縁保護コーティングおよびフォトパターニング
KR102751329B1 (ko) 2019-03-28 2025-01-07 삼성전자주식회사 반사방지막 형성용 폴리머 및 조성물과 반사방지막을 이용하는 집적회로 소자의 제조 방법
DE102019134535B4 (de) 2019-08-05 2023-09-07 Taiwan Semiconductor Manufacturing Co., Ltd. Materialien für unteren antireflexbelag
US11782345B2 (en) 2019-08-05 2023-10-10 Taiwan Semiconductor Manufacturing Co., Ltd. Bottom antireflective coating materials
KR102898764B1 (ko) 2019-08-16 2025-12-10 도쿄엘렉트론가부시키가이샤 확률 중심 결함 교정을 위한 방법 및 공정
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KR20240079161A (ko) * 2022-11-28 2024-06-04 듀폰스페셜티머터리얼스코리아 유한회사 포토레지스트 하층 조성물
KR102829720B1 (ko) * 2022-11-28 2025-07-03 듀폰스페셜티머터리얼스코리아 유한회사 포토레지스트 하층 조성물

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TW201035690A (en) 2010-10-01
EP2399169A2 (en) 2011-12-28
EP2399169A4 (en) 2012-10-10
JP2012518812A (ja) 2012-08-16
CN102395925B (zh) 2015-06-03
SG173730A1 (en) 2011-09-29
KR20110137316A (ko) 2011-12-22
CN102395925A (zh) 2012-03-28
EP2399169B1 (en) 2019-04-17
WO2010096615A2 (en) 2010-08-26
US20100213580A1 (en) 2010-08-26
TWI524151B (zh) 2016-03-01
JP5840954B2 (ja) 2016-01-06
US8383318B2 (en) 2013-02-26
WO2010096615A3 (en) 2010-12-09

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