JP2012508969A - 表面実装可能な装置 - Google Patents
表面実装可能な装置 Download PDFInfo
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- JP2012508969A JP2012508969A JP2011535868A JP2011535868A JP2012508969A JP 2012508969 A JP2012508969 A JP 2012508969A JP 2011535868 A JP2011535868 A JP 2011535868A JP 2011535868 A JP2011535868 A JP 2011535868A JP 2012508969 A JP2012508969 A JP 2012508969A
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- 239000004020 conductor Substances 0.000 claims abstract description 66
- 238000000926 separation method Methods 0.000 claims description 25
- 239000000853 adhesive Substances 0.000 claims description 6
- 230000001070 adhesive effect Effects 0.000 claims description 6
- 239000000470 constituent Substances 0.000 abstract description 6
- 239000004065 semiconductor Substances 0.000 description 16
- 150000001875 compounds Chemical class 0.000 description 10
- 239000012777 electrically insulating material Substances 0.000 description 9
- 238000004519 manufacturing process Methods 0.000 description 9
- 230000015572 biosynthetic process Effects 0.000 description 8
- 239000000463 material Substances 0.000 description 7
- 238000000034 method Methods 0.000 description 6
- 229910052751 metal Inorganic materials 0.000 description 4
- 239000002184 metal Substances 0.000 description 4
- 230000000737 periodic effect Effects 0.000 description 4
- 239000010409 thin film Substances 0.000 description 4
- 229910001092 metal group alloy Inorganic materials 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 238000001514 detection method Methods 0.000 description 2
- 238000010292 electrical insulation Methods 0.000 description 2
- 239000003822 epoxy resin Substances 0.000 description 2
- 238000001914 filtration Methods 0.000 description 2
- 239000011810 insulating material Substances 0.000 description 2
- 229920000647 polyepoxide Polymers 0.000 description 2
- 230000005855 radiation Effects 0.000 description 2
- 229910000679 solder Inorganic materials 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 239000011231 conductive filler Substances 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 238000009429 electrical wiring Methods 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 239000003365 glass fiber Substances 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 238000003780 insertion Methods 0.000 description 1
- 230000037431 insertion Effects 0.000 description 1
- 239000012778 molding material Substances 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 238000013139 quantization Methods 0.000 description 1
- 239000002096 quantum dot Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 238000001721 transfer moulding Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
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Abstract
Description
前記図面中では構成が同じか若しくは機能が同じ構成要素にはそれぞれ同じ符号が付されている。なお前記図面中に示されている複数の構成要素とそれらの間のサイズ比は必ずしも縮尺通りではない。
Claims (15)
- 実装面(101)と、
該実装面(101)に対向している上面(102)と、
電気的に絶縁されている支持体プレート(1)と、
電気的な構成素子(2)と、
ハウジング(3)とを有している、
表面実装可能な装置(100)において、
前記装置(100)が、実装面(101)の方向で前記支持体プレート(1)によって終端しており、
前記支持体プレート(1)は、実装面(101)に対向する固定面(103)を有しており、さらに、
前記支持体プレート(1)は、
電気的な構成素子(2)との電気的なコンタクト形成のために、
固定面(103)に配設された複数の導体線路(4)と、
実装面(101)に配設された複数のコンタクト面(5)と、
複数の貫通孔部(6)とを有しており、
前記複数のコンタクト面(5)のそれぞれが前記貫通孔部(6)を介して前記導体線路(4)と導電的に接続されており、
前記電気的な構成素子(2)は、前記支持体プレート(1)の固定面(103)に配設され、ハウジング(3)によって取り囲まれており、
前記貫通孔部(6)の少なくとも1つは、前記電気的な構成素子(2)の下方に配置されており、
前記ハウジング(3)は、前記支持体プレート(1)の固定面(103)に配設されており、それによって、前記ハウジング(3)と前記支持体プレート(1)が支持体プレート(1)の平面で相互に面一となるように配置されており、
さらに、前記装置(100)が上面(102)の方向では前記ハウジング(3)によって終端するように構成されていることを特徴とする、表面実装可能な装置。 - 前記貫通孔部(6)は専ら構成素子(2)の下方に配設されている、請求項1記載の表面実装可能な装置。
- 前記ハウジング(3)は、構成素子(2)と導体路を外側に向けて完全に電気的に絶縁している、請求項1または2記載の表面実装可能な装置。
- 前記装置(100)は、専ら実装面(101)の上方で外側に向けて導電的にコンタクト形成可能である、請求項1から3いずれか1項記載の表面実装可能な装置。
- 前記装置(100)は、専ら貫通孔部(6)を用いて導電的にコンタクト形成可能である、請求項1から4いずれか1項記載の表面実装可能な装置。
- 前記装置(100)は、側面(104)を有しており、該側面(104)と前記上面(102)は外側に向けて完全に電気的に絶縁状態に構成されている、請求項1から5いずれか1項記載の表面実装可能な装置。
- 前記構成素子(2)と支持体プレート(1)の間に、電気的に絶縁性の分離層(7)が設けられている、請求項1から6いずれか1項記載の表面実装可能な装置。
- 前記構成素子(2)は、支持体プレート(1)の貫通孔部(6)上方に配置され、該貫通孔部(6)を介してコンタクト面(5)と導電的に接続されている、請求項1から7いずれか1項記載の表面実装可能な装置。
- 前記構成素子(2)は、接着剤(8)を用いて固定されている、請求項1から8いずれか1項記載の表面実装可能な装置。
- 前記構成素子(2)は、電磁ビームの発生若しくは検出に適した活性層を有している、請求項1から9いずれか1項記載の表面実装可能な装置。
- 前記構成素子(2)は、LED、IRED、フォトトランジスタ、フォトダイオード、またはオプトICである、請求項1から10いずれか1項記載の表面実装可能な装置。
- ハウジング(3)は、構成素子(2)から発せられたビーム又は検出すべきビームに対して透過的である、請求項1から11いずれか1項記載の表面実装可能な装置。
- ハウジング(3)は、波長領域のビームに対して非透過的である、請求項10から12いずれか1項記載の表面実装可能な装置。
- 複数の電気的な構成素子(2)が支持体プレート(1)の固定面(103)に配設され、前記複数の構成素子がそれぞれハウジング(3)によって取り囲まれている、請求項1から13いずれか1項記載の表面実装可能な装置。
- 前記支持体プレート(1)が多層構造を有している、請求項1から14いずれか1項記載の表面実装可能な装置。
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DE102008057174A DE102008057174A1 (de) | 2008-11-13 | 2008-11-13 | Oberflächenmontierbare Vorrichtung |
DE102008057174.1 | 2008-11-13 | ||
PCT/DE2009/001435 WO2010054613A1 (de) | 2008-11-13 | 2009-10-15 | Oberflächenmontierbare vorrichtung |
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EP (1) | EP2345076B1 (ja) |
JP (1) | JP5502881B2 (ja) |
KR (1) | KR101625253B1 (ja) |
CN (1) | CN102210021B (ja) |
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DE102011085921A1 (de) * | 2011-11-08 | 2013-05-08 | Robert Bosch Gmbh | Kraftoptimierte Kontaktierung von elektrischen Verbrauchern an Leiterplatten |
DE102013113190A1 (de) * | 2013-11-28 | 2015-05-28 | Osram Oled Gmbh | Elektronisches Bauteil |
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- 2009-10-15 KR KR1020117013303A patent/KR101625253B1/ko active IP Right Grant
- 2009-10-15 JP JP2011535868A patent/JP5502881B2/ja active Active
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JP2006066630A (ja) * | 2004-08-26 | 2006-03-09 | Kyocera Corp | 配線基板および電気装置並びに発光装置 |
JP2006128512A (ja) * | 2004-10-29 | 2006-05-18 | Ngk Spark Plug Co Ltd | 発光素子用セラミック基板 |
JP2007103937A (ja) * | 2005-09-30 | 2007-04-19 | Osram Opto Semiconductors Gmbh | 電磁ビーム放出オプトエレクトロニクス構成素子のためのケーシング及び電磁ビーム放出オプトエレクトロニクス構成素子及び電磁ビーム放出オプトエレクトロニクス構成素子のためのケーシングの又はこのようなケーシングを有する電磁ビーム放出構成素子の製造のための方法 |
JP2007208136A (ja) * | 2006-02-03 | 2007-08-16 | Shinko Electric Ind Co Ltd | 発光装置 |
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KR20110091761A (ko) | 2011-08-12 |
CN102210021B (zh) | 2013-10-30 |
EP2345076B1 (de) | 2018-08-01 |
DE102008057174A1 (de) | 2010-05-20 |
US20110299232A1 (en) | 2011-12-08 |
EP2345076A1 (de) | 2011-07-20 |
CN102210021A (zh) | 2011-10-05 |
US8642902B2 (en) | 2014-02-04 |
JP5502881B2 (ja) | 2014-05-28 |
WO2010054613A1 (de) | 2010-05-20 |
KR101625253B1 (ko) | 2016-05-27 |
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