JP2012504320A5 - - Google Patents

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Publication number
JP2012504320A5
JP2012504320A5 JP2011528202A JP2011528202A JP2012504320A5 JP 2012504320 A5 JP2012504320 A5 JP 2012504320A5 JP 2011528202 A JP2011528202 A JP 2011528202A JP 2011528202 A JP2011528202 A JP 2011528202A JP 2012504320 A5 JP2012504320 A5 JP 2012504320A5
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JP
Japan
Prior art keywords
mask
vector
exposure apparatus
point
projection exposure
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2011528202A
Other languages
English (en)
Japanese (ja)
Other versions
JP5634403B2 (ja
JP2012504320A (ja
Filing date
Publication date
Priority claimed from DE102008042438A external-priority patent/DE102008042438B4/de
Application filed filed Critical
Publication of JP2012504320A publication Critical patent/JP2012504320A/ja
Publication of JP2012504320A5 publication Critical patent/JP2012504320A5/ja
Application granted granted Critical
Publication of JP5634403B2 publication Critical patent/JP5634403B2/ja
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

JP2011528202A 2008-09-29 2009-08-22 ２つ以上の動作状態を有するマイクロリソグラフィ投影露光装置 Expired - Fee Related JP5634403B2 (ja)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US10083608P 2008-09-29 2008-09-29
DE102008042438A DE102008042438B4 (de) 2008-09-29 2008-09-29 Mikrolithographie-Projektionsbelichtungsanlage mit mindestens zwei Arbeitszuständen
US61/100,836 2008-09-29
DE102008042438.2 2008-09-29
PCT/EP2009/006113 WO2010034382A1 (en) 2008-09-29 2009-08-22 Microlithography projection exposure apparatus having at least two operating states

Publications (3)

Publication Number Publication Date
JP2012504320A JP2012504320A (ja) 2012-02-16
JP2012504320A5 true JP2012504320A5 (enExample) 2012-10-11
JP5634403B2 JP5634403B2 (ja) 2014-12-03

Family

ID=41794732

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2011528202A Expired - Fee Related JP5634403B2 (ja) 2008-09-29 2009-08-22 ２つ以上の動作状態を有するマイクロリソグラフィ投影露光装置

Country Status (7)

Country Link
US (1) US9529276B2 (enExample)
JP (1) JP5634403B2 (enExample)
KR (1) KR101666690B1 (enExample)
CN (1) CN102171614B (enExample)
DE (1) DE102008042438B4 (enExample)
TW (1) TWI483082B (enExample)
WO (1) WO2010034382A1 (enExample)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102010041746A1 (de) * 2010-09-30 2012-04-05 Carl Zeiss Smt Gmbh Projektionsbelichtungsanlage der EUV-Mikrolithographie und Verfahren zur mikrolithographischen Belichtung
DE102012207377A1 (de) 2012-05-03 2013-11-07 Carl Zeiss Smt Gmbh Beleuchtungsoptik sowie optisches System für die EUV-Projektionslithographie
CN105573060B (zh) * 2014-10-16 2017-12-01 中芯国际集成电路制造(上海)有限公司 Euv光源和曝光装置、校准装置和校准方法
CN107667315B (zh) * 2015-05-29 2021-04-16 Asml荷兰有限公司 使用对源辐射的角分布的多次采样的光刻术模拟

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5227839A (en) * 1991-06-24 1993-07-13 Etec Systems, Inc. Small field scanner
JP3711586B2 (ja) 1995-06-02 2005-11-02 株式会社ニコン 走査露光装置
JPH11260713A (ja) * 1998-03-12 1999-09-24 Nikon Corp 投影露光方法及び投影露光装置
JP2000091220A (ja) 1998-09-08 2000-03-31 Nikon Corp 投影露光装置及び投影露光方法
JP2003084445A (ja) * 2001-09-13 2003-03-19 Canon Inc 走査型露光装置および露光方法
US20060104413A1 (en) * 2003-03-05 2006-05-18 Tadahiro Ohmi Mask repeater and mask manufacturing method
US6833854B1 (en) * 2003-06-12 2004-12-21 Micronic Laser Systems Ab Method for high precision printing of patterns
US7426076B2 (en) * 2004-12-23 2008-09-16 Asml Holding N.V. Projection system for a lithographic apparatus
US7502097B2 (en) * 2004-12-27 2009-03-10 Asml Netherlands B.V. Method and exposure apparatus for performing a tilted focus and a device manufactured accordingly
KR101213950B1 (ko) * 2005-05-03 2012-12-18 칼 짜이스 에스엠티 게엠베하 편광을 이용한 마이크로리소그래피 노광장치 및 제1 및 제2오목거울을 구비한 마이크로리소그래피 투영시스템
DE102006043251A1 (de) * 2005-09-13 2007-03-15 Carl Zeiss Smt Ag Mikrolithographie-Projektionsobjektiv, Projektionsbelichtungsanlage mit einem derartigen Objektiv, Herstellungsverfahren mikrostrukturierter Bauteile mit einer derartigen Projektionsbelichtungsanlage sowie mit diesem Verfahren hergestelltes Bauteil
KR100962911B1 (ko) 2005-09-13 2010-06-10 칼 짜이스 에스엠테 아게 마이크로리소그라피 투영 광학 시스템, 디바이스 제작 방법 및 광학 표면을 설계하기 위한 방법
JP5479890B2 (ja) * 2006-04-07 2014-04-23 カール・ツァイス・エスエムティー・ゲーエムベーハー マイクロリソグラフィ投影光学システム、装置、及び製造方法
US7738077B2 (en) * 2006-07-31 2010-06-15 Asml Netherlands B.V. Patterning device utilizing sets of stepped mirrors and method of using same
DE102006036064A1 (de) * 2006-08-02 2008-02-07 Carl Zeiss Smt Ag Beleuchtungssystem für eine Projektionsbelichtungsanlage mit Wellenlängen ≦ 193 nm
JP2008042203A (ja) * 2006-08-02 2008-02-21 Cark Zeiss Smt Ag 波長≦１９３ｎｍによる投影露光装置用の照明システム

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