TWI483082B - 具有至少兩操作狀態之微影投影曝光裝置 - Google Patents

具有至少兩操作狀態之微影投影曝光裝置 Download PDF

Info

Publication number
TWI483082B
TWI483082B TW098127714A TW98127714A TWI483082B TW I483082 B TWI483082 B TW I483082B TW 098127714 A TW098127714 A TW 098127714A TW 98127714 A TW98127714 A TW 98127714A TW I483082 B TWI483082 B TW I483082B
Authority
TW
Taiwan
Prior art keywords
centroid
reticle
normalized
vector
centroid direction
Prior art date
Application number
TW098127714A
Other languages
English (en)
Chinese (zh)
Other versions
TW201017344A (en
Inventor
Hans Juergen Mann
Winfried Kaiser
Original Assignee
Zeiss Carl Smt Gmbh
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Zeiss Carl Smt Gmbh filed Critical Zeiss Carl Smt Gmbh
Publication of TW201017344A publication Critical patent/TW201017344A/zh
Application granted granted Critical
Publication of TWI483082B publication Critical patent/TWI483082B/zh

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70425—Imaging strategies, e.g. for increasing throughput or resolution, printing product fields larger than the image field or compensating lithography- or non-lithography errors, e.g. proximity correction, mix-and-match, stitching or double patterning
    • G03F7/70475—Stitching, i.e. connecting image fields to produce a device field, the field occupied by a device such as a memory chip, processor chip, CCD, flat panel display
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058—Mask illumination systems
    • G03F7/70191—Optical correction elements, filters or phase plates for controlling intensity, wavelength, polarisation, phase or the like
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70283—Mask effects on the imaging process

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Engineering & Computer Science (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Lenses (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
TW098127714A 2008-09-29 2009-08-18 具有至少兩操作狀態之微影投影曝光裝置 TWI483082B (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE102008042438A DE102008042438B4 (de) 2008-09-29 2008-09-29 Mikrolithographie-Projektionsbelichtungsanlage mit mindestens zwei Arbeitszuständen

Publications (2)

Publication Number Publication Date
TW201017344A TW201017344A (en) 2010-05-01
TWI483082B true TWI483082B (zh) 2015-05-01

Family

ID=41794732

Family Applications (1)

Application Number Title Priority Date Filing Date
TW098127714A TWI483082B (zh) 2008-09-29 2009-08-18 具有至少兩操作狀態之微影投影曝光裝置

Country Status (7)

Country Link
US (1) US9529276B2 (enExample)
JP (1) JP5634403B2 (enExample)
KR (1) KR101666690B1 (enExample)
CN (1) CN102171614B (enExample)
DE (1) DE102008042438B4 (enExample)
TW (1) TWI483082B (enExample)
WO (1) WO2010034382A1 (enExample)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102010041746A1 (de) * 2010-09-30 2012-04-05 Carl Zeiss Smt Gmbh Projektionsbelichtungsanlage der EUV-Mikrolithographie und Verfahren zur mikrolithographischen Belichtung
DE102012207377A1 (de) 2012-05-03 2013-11-07 Carl Zeiss Smt Gmbh Beleuchtungsoptik sowie optisches System für die EUV-Projektionslithographie
CN105573060B (zh) * 2014-10-16 2017-12-01 中芯国际集成电路制造(上海)有限公司 Euv光源和曝光装置、校准装置和校准方法
CN107667315B (zh) * 2015-05-29 2021-04-16 Asml荷兰有限公司 使用对源辐射的角分布的多次采样的光刻术模拟

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6833854B1 (en) * 2003-06-12 2004-12-21 Micronic Laser Systems Ab Method for high precision printing of patterns
US20060139745A1 (en) * 2004-12-23 2006-06-29 Asml Holding N.V. Projection system for a lithograhic apparatus
US20060146302A1 (en) * 2004-12-27 2006-07-06 Asml Netherlands B.V. Method and exposure apparatus for performing a tilted focus and a device manufactured accordingly
US20080024745A1 (en) * 2006-07-31 2008-01-31 Asml Netherlands B.V. Patterning device utilizing sets of stepped mirrors and method of using same
CN101263430A (zh) * 2005-09-13 2008-09-10 卡尔蔡司Smt股份有限公司 微光刻投影光学系统、用于制造装置的方法以及设计光学表面的方法

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5227839A (en) * 1991-06-24 1993-07-13 Etec Systems, Inc. Small field scanner
JP3711586B2 (ja) 1995-06-02 2005-11-02 株式会社ニコン 走査露光装置
JPH11260713A (ja) * 1998-03-12 1999-09-24 Nikon Corp 投影露光方法及び投影露光装置
JP2000091220A (ja) 1998-09-08 2000-03-31 Nikon Corp 投影露光装置及び投影露光方法
JP2003084445A (ja) * 2001-09-13 2003-03-19 Canon Inc 走査型露光装置および露光方法
US20060104413A1 (en) * 2003-03-05 2006-05-18 Tadahiro Ohmi Mask repeater and mask manufacturing method
KR101213950B1 (ko) * 2005-05-03 2012-12-18 칼 짜이스 에스엠티 게엠베하 편광을 이용한 마이크로리소그래피 노광장치 및 제1 및 제2오목거울을 구비한 마이크로리소그래피 투영시스템
KR100962911B1 (ko) 2005-09-13 2010-06-10 칼 짜이스 에스엠테 아게 마이크로리소그라피 투영 광학 시스템, 디바이스 제작 방법 및 광학 표면을 설계하기 위한 방법
JP5479890B2 (ja) * 2006-04-07 2014-04-23 カール・ツァイス・エスエムティー・ゲーエムベーハー マイクロリソグラフィ投影光学システム、装置、及び製造方法
DE102006036064A1 (de) * 2006-08-02 2008-02-07 Carl Zeiss Smt Ag Beleuchtungssystem für eine Projektionsbelichtungsanlage mit Wellenlängen ≦ 193 nm
JP2008042203A (ja) * 2006-08-02 2008-02-21 Cark Zeiss Smt Ag 波長≦１９３ｎｍによる投影露光装置用の照明システム

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6833854B1 (en) * 2003-06-12 2004-12-21 Micronic Laser Systems Ab Method for high precision printing of patterns
US20060139745A1 (en) * 2004-12-23 2006-06-29 Asml Holding N.V. Projection system for a lithograhic apparatus
US20060146302A1 (en) * 2004-12-27 2006-07-06 Asml Netherlands B.V. Method and exposure apparatus for performing a tilted focus and a device manufactured accordingly
CN101263430A (zh) * 2005-09-13 2008-09-10 卡尔蔡司Smt股份有限公司 微光刻投影光学系统、用于制造装置的方法以及设计光学表面的方法
US20080024745A1 (en) * 2006-07-31 2008-01-31 Asml Netherlands B.V. Patterning device utilizing sets of stepped mirrors and method of using same

Also Published As

Publication number Publication date
KR20110059721A (ko) 2011-06-03
DE102008042438B4 (de) 2010-11-04
US20110200946A1 (en) 2011-08-18
JP5634403B2 (ja) 2014-12-03
DE102008042438A1 (de) 2010-04-08
KR101666690B1 (ko) 2016-10-17
WO2010034382A1 (en) 2010-04-01
TW201017344A (en) 2010-05-01
CN102171614A (zh) 2011-08-31
JP2012504320A (ja) 2012-02-16
US9529276B2 (en) 2016-12-27
CN102171614B (zh) 2012-08-08

Similar Documents

Publication Publication Date Title
TWI468838B (zh) 成像光學系統與包含此類型成像光學系統之用於微影的投影曝光裝置
TWI451125B (zh) 顯微蝕刻投影光學系統、包含此一光學系統之顯微蝕刻工具、使用此一顯微蝕刻工具於顯微蝕刻生產微結構元件之方法、藉此一方法所生產之微結構元件以及於此一光學系統中設計一光學表面的方法
US8208200B2 (en) Imaging optical system
US9482961B2 (en) Microlithography projection optical system, tool and method of production
JP2003177319A (ja) Ｅｕｖフォトリソグラフィ用の反射投影レンズ
JP7770568B2 (ja) 光学測定システムによる物体の照明および結像中の光学生成システムの照明および結像特性をシミュレートするための瞳絞り形状を最適化するための方法
US9535337B2 (en) Imaging optics, microlithography projection exposure apparatus having same and related methods
TWI483082B (zh) 具有至少兩操作狀態之微影投影曝光裝置
US9933710B2 (en) Projection exposure method and projection exposure apparatus
CN117441122A (zh) 成像光学单元
US20240103382A1 (en) Imaging optical unit
CN117063041A (zh) 用于通过干涉测量法测量表面形状的测量装置