CN102171614B - 具有至少两个操作状态的微光刻投射曝光设备 - Google Patents

具有至少两个操作状态的微光刻投射曝光设备 Download PDF

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Publication number
CN102171614B
CN102171614B CN2009801375100A CN200980137510A CN102171614B CN 102171614 B CN102171614 B CN 102171614B CN 2009801375100 A CN2009801375100 A CN 2009801375100A CN 200980137510 A CN200980137510 A CN 200980137510A CN 102171614 B CN102171614 B CN 102171614B
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mask
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Expired - Fee Related
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CN2009801375100A
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English (en)
Chinese (zh)
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CN102171614A (zh
Inventor
汉斯-于尔根.曼
温弗里德.凯泽
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Carl Zeiss SMT GmbH
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Carl Zeiss SMT GmbH
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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70425—Imaging strategies, e.g. for increasing throughput or resolution, printing product fields larger than the image field or compensating lithography- or non-lithography errors, e.g. proximity correction, mix-and-match, stitching or double patterning
    • G03F7/70475—Stitching, i.e. connecting image fields to produce a device field, the field occupied by a device such as a memory chip, processor chip, CCD, flat panel display
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058—Mask illumination systems
    • G03F7/70191—Optical correction elements, filters or phase plates for controlling intensity, wavelength, polarisation, phase or the like
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70283—Mask effects on the imaging process

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Engineering & Computer Science (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Lenses (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
CN2009801375100A 2008-09-29 2009-08-22 具有至少两个操作状态的微光刻投射曝光设备 Expired - Fee Related CN102171614B (zh)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US10083608P 2008-09-29 2008-09-29
DE102008042438A DE102008042438B4 (de) 2008-09-29 2008-09-29 Mikrolithographie-Projektionsbelichtungsanlage mit mindestens zwei Arbeitszuständen
US61/100,836 2008-09-29
DE102008042438.2 2008-09-29
PCT/EP2009/006113 WO2010034382A1 (en) 2008-09-29 2009-08-22 Microlithography projection exposure apparatus having at least two operating states

Publications (2)

Publication Number Publication Date
CN102171614A CN102171614A (zh) 2011-08-31
CN102171614B true CN102171614B (zh) 2012-08-08

Family

ID=41794732

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CN2009801375100A Expired - Fee Related CN102171614B (zh) 2008-09-29 2009-08-22 具有至少两个操作状态的微光刻投射曝光设备

Country Status (7)

Country Link
US (1) US9529276B2 (enExample)
JP (1) JP5634403B2 (enExample)
KR (1) KR101666690B1 (enExample)
CN (1) CN102171614B (enExample)
DE (1) DE102008042438B4 (enExample)
TW (1) TWI483082B (enExample)
WO (1) WO2010034382A1 (enExample)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102010041746A1 (de) * 2010-09-30 2012-04-05 Carl Zeiss Smt Gmbh Projektionsbelichtungsanlage der EUV-Mikrolithographie und Verfahren zur mikrolithographischen Belichtung
DE102012207377A1 (de) 2012-05-03 2013-11-07 Carl Zeiss Smt Gmbh Beleuchtungsoptik sowie optisches System für die EUV-Projektionslithographie
CN105573060B (zh) * 2014-10-16 2017-12-01 中芯国际集成电路制造(上海)有限公司 Euv光源和曝光装置、校准装置和校准方法
CN107667315B (zh) * 2015-05-29 2021-04-16 Asml荷兰有限公司 使用对源辐射的角分布的多次采样的光刻术模拟

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1884831A2 (de) * 2006-08-02 2008-02-06 Carl Zeiss SMT AG Beleuchtungssystem für eine Projektionsbelichtungsanlage mit Wellenlängen < 193 nm

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5227839A (en) * 1991-06-24 1993-07-13 Etec Systems, Inc. Small field scanner
JP3711586B2 (ja) 1995-06-02 2005-11-02 株式会社ニコン 走査露光装置
JPH11260713A (ja) * 1998-03-12 1999-09-24 Nikon Corp 投影露光方法及び投影露光装置
JP2000091220A (ja) 1998-09-08 2000-03-31 Nikon Corp 投影露光装置及び投影露光方法
JP2003084445A (ja) * 2001-09-13 2003-03-19 Canon Inc 走査型露光装置および露光方法
US20060104413A1 (en) * 2003-03-05 2006-05-18 Tadahiro Ohmi Mask repeater and mask manufacturing method
US6833854B1 (en) * 2003-06-12 2004-12-21 Micronic Laser Systems Ab Method for high precision printing of patterns
US7426076B2 (en) * 2004-12-23 2008-09-16 Asml Holding N.V. Projection system for a lithographic apparatus
US7502097B2 (en) * 2004-12-27 2009-03-10 Asml Netherlands B.V. Method and exposure apparatus for performing a tilted focus and a device manufactured accordingly
KR101213950B1 (ko) * 2005-05-03 2012-12-18 칼 짜이스 에스엠티 게엠베하 편광을 이용한 마이크로리소그래피 노광장치 및 제1 및 제2오목거울을 구비한 마이크로리소그래피 투영시스템
DE102006043251A1 (de) * 2005-09-13 2007-03-15 Carl Zeiss Smt Ag Mikrolithographie-Projektionsobjektiv, Projektionsbelichtungsanlage mit einem derartigen Objektiv, Herstellungsverfahren mikrostrukturierter Bauteile mit einer derartigen Projektionsbelichtungsanlage sowie mit diesem Verfahren hergestelltes Bauteil
KR100962911B1 (ko) 2005-09-13 2010-06-10 칼 짜이스 에스엠테 아게 마이크로리소그라피 투영 광학 시스템, 디바이스 제작 방법 및 광학 표면을 설계하기 위한 방법
JP5479890B2 (ja) * 2006-04-07 2014-04-23 カール・ツァイス・エスエムティー・ゲーエムベーハー マイクロリソグラフィ投影光学システム、装置、及び製造方法
US7738077B2 (en) * 2006-07-31 2010-06-15 Asml Netherlands B.V. Patterning device utilizing sets of stepped mirrors and method of using same
JP2008042203A (ja) * 2006-08-02 2008-02-21 Cark Zeiss Smt Ag 波長≦１９３ｎｍによる投影露光装置用の照明システム

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1884831A2 (de) * 2006-08-02 2008-02-06 Carl Zeiss SMT AG Beleuchtungssystem für eine Projektionsbelichtungsanlage mit Wellenlängen < 193 nm

Also Published As

Publication number Publication date
KR20110059721A (ko) 2011-06-03
TWI483082B (zh) 2015-05-01
DE102008042438B4 (de) 2010-11-04
US20110200946A1 (en) 2011-08-18
JP5634403B2 (ja) 2014-12-03
DE102008042438A1 (de) 2010-04-08
KR101666690B1 (ko) 2016-10-17
WO2010034382A1 (en) 2010-04-01
TW201017344A (en) 2010-05-01
CN102171614A (zh) 2011-08-31
JP2012504320A (ja) 2012-02-16
US9529276B2 (en) 2016-12-27

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