JP5634403B2 - ２つ以上の動作状態を有するマイクロリソグラフィ投影露光装置 - Google Patents

２つ以上の動作状態を有するマイクロリソグラフィ投影露光装置 Download PDF

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Publication number
JP5634403B2
JP5634403B2 JP2011528202A JP2011528202A JP5634403B2 JP 5634403 B2 JP5634403 B2 JP 5634403B2 JP 2011528202 A JP2011528202 A JP 2011528202A JP 2011528202 A JP2011528202 A JP 2011528202A JP 5634403 B2 JP5634403 B2 JP 5634403B2
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Japan
Prior art keywords
mask
centroid
exposure apparatus
vector
point
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Expired - Fee Related
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JP2011528202A
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Japanese (ja)
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JP2012504320A5 (enExample
JP2012504320A (ja
Inventor
ハンス ユールゲン マン
ハンス ユールゲン マン
ヴィンフリート カイザー
ヴィンフリート カイザー
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カール・ツァイス・エスエムティー・ゲーエムベーハー
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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70425—Imaging strategies, e.g. for increasing throughput or resolution, printing product fields larger than the image field or compensating lithography- or non-lithography errors, e.g. proximity correction, mix-and-match, stitching or double patterning
    • G03F7/70475—Stitching, i.e. connecting image fields to produce a device field, the field occupied by a device such as a memory chip, processor chip, CCD, flat panel display
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058—Mask illumination systems
    • G03F7/70191—Optical correction elements, filters or phase plates for controlling intensity, wavelength, polarisation, phase or the like
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70283—Mask effects on the imaging process
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Engineering & Computer Science (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Lenses (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
JP2011528202A 2008-09-29 2009-08-22 ２つ以上の動作状態を有するマイクロリソグラフィ投影露光装置 Expired - Fee Related JP5634403B2 (ja)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US10083608P 2008-09-29 2008-09-29
DE102008042438A DE102008042438B4 (de) 2008-09-29 2008-09-29 Mikrolithographie-Projektionsbelichtungsanlage mit mindestens zwei Arbeitszuständen
US61/100,836 2008-09-29
DE102008042438.2 2008-09-29
PCT/EP2009/006113 WO2010034382A1 (en) 2008-09-29 2009-08-22 Microlithography projection exposure apparatus having at least two operating states

Publications (3)

Publication Number Publication Date
JP2012504320A JP2012504320A (ja) 2012-02-16
JP2012504320A5 JP2012504320A5 (enExample) 2012-10-11
JP5634403B2 true JP5634403B2 (ja) 2014-12-03

Family

ID=41794732

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2011528202A Expired - Fee Related JP5634403B2 (ja) 2008-09-29 2009-08-22 ２つ以上の動作状態を有するマイクロリソグラフィ投影露光装置

Country Status (7)

Country Link
US (1) US9529276B2 (enExample)
JP (1) JP5634403B2 (enExample)
KR (1) KR101666690B1 (enExample)
CN (1) CN102171614B (enExample)
DE (1) DE102008042438B4 (enExample)
TW (1) TWI483082B (enExample)
WO (1) WO2010034382A1 (enExample)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102010041746A1 (de) * 2010-09-30 2012-04-05 Carl Zeiss Smt Gmbh Projektionsbelichtungsanlage der EUV-Mikrolithographie und Verfahren zur mikrolithographischen Belichtung
DE102012207377A1 (de) 2012-05-03 2013-11-07 Carl Zeiss Smt Gmbh Beleuchtungsoptik sowie optisches System für die EUV-Projektionslithographie
CN105573060B (zh) * 2014-10-16 2017-12-01 中芯国际集成电路制造(上海)有限公司 Euv光源和曝光装置、校准装置和校准方法
CN107667315B (zh) * 2015-05-29 2021-04-16 Asml荷兰有限公司 使用对源辐射的角分布的多次采样的光刻术模拟

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5227839A (en) * 1991-06-24 1993-07-13 Etec Systems, Inc. Small field scanner
JP3711586B2 (ja) 1995-06-02 2005-11-02 株式会社ニコン 走査露光装置
JPH11260713A (ja) * 1998-03-12 1999-09-24 Nikon Corp 投影露光方法及び投影露光装置
JP2000091220A (ja) 1998-09-08 2000-03-31 Nikon Corp 投影露光装置及び投影露光方法
JP2003084445A (ja) * 2001-09-13 2003-03-19 Canon Inc 走査型露光装置および露光方法
US20060104413A1 (en) * 2003-03-05 2006-05-18 Tadahiro Ohmi Mask repeater and mask manufacturing method
US6833854B1 (en) * 2003-06-12 2004-12-21 Micronic Laser Systems Ab Method for high precision printing of patterns
US7426076B2 (en) * 2004-12-23 2008-09-16 Asml Holding N.V. Projection system for a lithographic apparatus
US7502097B2 (en) * 2004-12-27 2009-03-10 Asml Netherlands B.V. Method and exposure apparatus for performing a tilted focus and a device manufactured accordingly
KR101213950B1 (ko) * 2005-05-03 2012-12-18 칼 짜이스 에스엠티 게엠베하 편광을 이용한 마이크로리소그래피 노광장치 및 제1 및 제2오목거울을 구비한 마이크로리소그래피 투영시스템
DE102006043251A1 (de) * 2005-09-13 2007-03-15 Carl Zeiss Smt Ag Mikrolithographie-Projektionsobjektiv, Projektionsbelichtungsanlage mit einem derartigen Objektiv, Herstellungsverfahren mikrostrukturierter Bauteile mit einer derartigen Projektionsbelichtungsanlage sowie mit diesem Verfahren hergestelltes Bauteil
KR100962911B1 (ko) 2005-09-13 2010-06-10 칼 짜이스 에스엠테 아게 마이크로리소그라피 투영 광학 시스템, 디바이스 제작 방법 및 광학 표면을 설계하기 위한 방법
JP5479890B2 (ja) * 2006-04-07 2014-04-23 カール・ツァイス・エスエムティー・ゲーエムベーハー マイクロリソグラフィ投影光学システム、装置、及び製造方法
US7738077B2 (en) * 2006-07-31 2010-06-15 Asml Netherlands B.V. Patterning device utilizing sets of stepped mirrors and method of using same
DE102006036064A1 (de) * 2006-08-02 2008-02-07 Carl Zeiss Smt Ag Beleuchtungssystem für eine Projektionsbelichtungsanlage mit Wellenlängen ≦ 193 nm
JP2008042203A (ja) * 2006-08-02 2008-02-21 Cark Zeiss Smt Ag 波長≦１９３ｎｍによる投影露光装置用の照明システム

Also Published As

Publication number Publication date
KR20110059721A (ko) 2011-06-03
TWI483082B (zh) 2015-05-01
DE102008042438B4 (de) 2010-11-04
US20110200946A1 (en) 2011-08-18
DE102008042438A1 (de) 2010-04-08
KR101666690B1 (ko) 2016-10-17
WO2010034382A1 (en) 2010-04-01
TW201017344A (en) 2010-05-01
CN102171614A (zh) 2011-08-31
JP2012504320A (ja) 2012-02-16
US9529276B2 (en) 2016-12-27
CN102171614B (zh) 2012-08-08

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