KR101666690B1 - 적어도 두 작동 상태를 가지는 마이크로리소그래피 투영 노광 장치 - Google Patents

적어도 두 작동 상태를 가지는 마이크로리소그래피 투영 노광 장치 Download PDF

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Publication number
KR101666690B1
KR101666690B1 KR1020117006450A KR20117006450A KR101666690B1 KR 101666690 B1 KR101666690 B1 KR 101666690B1 KR 1020117006450 A KR1020117006450 A KR 1020117006450A KR 20117006450 A KR20117006450 A KR 20117006450A KR 101666690 B1 KR101666690 B1 KR 101666690B1
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South Korea
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mask
standard
vector
point
partial
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Expired - Fee Related
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KR1020117006450A
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Korean (ko)
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KR20110059721A (ko
Inventor
한스-위르겐 만
윈프리드 카이저
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칼 짜이스 에스엠티 게엠베하
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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70425—Imaging strategies, e.g. for increasing throughput or resolution, printing product fields larger than the image field or compensating lithography- or non-lithography errors, e.g. proximity correction, mix-and-match, stitching or double patterning
    • G03F7/70475—Stitching, i.e. connecting image fields to produce a device field, the field occupied by a device such as a memory chip, processor chip, CCD, flat panel display
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058—Mask illumination systems
    • G03F7/70191—Optical correction elements, filters or phase plates for controlling intensity, wavelength, polarisation, phase or the like
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70283—Mask effects on the imaging process

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Engineering & Computer Science (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Lenses (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
KR1020117006450A 2008-09-29 2009-08-22 적어도 두 작동 상태를 가지는 마이크로리소그래피 투영 노광 장치 Expired - Fee Related KR101666690B1 (ko)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US10083608P 2008-09-29 2008-09-29
DE102008042438.2 2008-09-29
DE102008042438A DE102008042438B4 (de) 2008-09-29 2008-09-29 Mikrolithographie-Projektionsbelichtungsanlage mit mindestens zwei Arbeitszuständen
US61/100,836 2008-09-29
PCT/EP2009/006113 WO2010034382A1 (en) 2008-09-29 2009-08-22 Microlithography projection exposure apparatus having at least two operating states

Publications (2)

Publication Number Publication Date
KR20110059721A KR20110059721A (ko) 2011-06-03
KR101666690B1 true KR101666690B1 (ko) 2016-10-17

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Family Applications (1)

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KR1020117006450A Expired - Fee Related KR101666690B1 (ko) 2008-09-29 2009-08-22 적어도 두 작동 상태를 가지는 마이크로리소그래피 투영 노광 장치

Country Status (7)

Country Link
US (1) US9529276B2 (enExample)
JP (1) JP5634403B2 (enExample)
KR (1) KR101666690B1 (enExample)
CN (1) CN102171614B (enExample)
DE (1) DE102008042438B4 (enExample)
TW (1) TWI483082B (enExample)
WO (1) WO2010034382A1 (enExample)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102010041746A1 (de) 2010-09-30 2012-04-05 Carl Zeiss Smt Gmbh Projektionsbelichtungsanlage der EUV-Mikrolithographie und Verfahren zur mikrolithographischen Belichtung
DE102012207377A1 (de) * 2012-05-03 2013-11-07 Carl Zeiss Smt Gmbh Beleuchtungsoptik sowie optisches System für die EUV-Projektionslithographie
CN105573060B (zh) * 2014-10-16 2017-12-01 中芯国际集成电路制造(上海)有限公司 Euv光源和曝光装置、校准装置和校准方法
WO2016192964A1 (en) * 2015-05-29 2016-12-08 Asml Netherlands B.V. Simulation of lithography using multiple-sampling of angular distribution of source radiation

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20060146302A1 (en) 2004-12-27 2006-07-06 Asml Netherlands B.V. Method and exposure apparatus for performing a tilted focus and a device manufactured accordingly
US20080024745A1 (en) * 2006-07-31 2008-01-31 Asml Netherlands B.V. Patterning device utilizing sets of stepped mirrors and method of using same

Family Cites Families (14)

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Publication number Priority date Publication date Assignee Title
US5227839A (en) * 1991-06-24 1993-07-13 Etec Systems, Inc. Small field scanner
JP3711586B2 (ja) 1995-06-02 2005-11-02 株式会社ニコン 走査露光装置
JPH11260713A (ja) * 1998-03-12 1999-09-24 Nikon Corp 投影露光方法及び投影露光装置
JP2000091220A (ja) 1998-09-08 2000-03-31 Nikon Corp 投影露光装置及び投影露光方法
JP2003084445A (ja) * 2001-09-13 2003-03-19 Canon Inc 走査型露光装置および露光方法
EP1608003A1 (en) * 2003-03-05 2005-12-21 Tadahiro Ohmi Mask repeater and mask manufacturing method
US6833854B1 (en) * 2003-06-12 2004-12-21 Micronic Laser Systems Ab Method for high precision printing of patterns
US7426076B2 (en) * 2004-12-23 2008-09-16 Asml Holding N.V. Projection system for a lithographic apparatus
CN101171547A (zh) * 2005-05-03 2008-04-30 卡尔·蔡司Smt股份公司 使用偏振光的微光刻曝光装置及具有凹面主镜和凹面辅镜的微光刻投射系统
DE102006043251A1 (de) * 2005-09-13 2007-03-15 Carl Zeiss Smt Ag Mikrolithographie-Projektionsobjektiv, Projektionsbelichtungsanlage mit einem derartigen Objektiv, Herstellungsverfahren mikrostrukturierter Bauteile mit einer derartigen Projektionsbelichtungsanlage sowie mit diesem Verfahren hergestelltes Bauteil
EP1924888B1 (en) 2005-09-13 2013-07-24 Carl Zeiss SMT GmbH Microlithography projection optical system, method for manufacturing a device and method to design an optical surface
JP5479890B2 (ja) * 2006-04-07 2014-04-23 カール・ツァイス・エスエムティー・ゲーエムベーハー マイクロリソグラフィ投影光学システム、装置、及び製造方法
JP2008042203A (ja) * 2006-08-02 2008-02-21 Cark Zeiss Smt Ag 波長≦１９３ｎｍによる投影露光装置用の照明システム
DE102006036064A1 (de) * 2006-08-02 2008-02-07 Carl Zeiss Smt Ag Beleuchtungssystem für eine Projektionsbelichtungsanlage mit Wellenlängen ≦ 193 nm

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20060146302A1 (en) 2004-12-27 2006-07-06 Asml Netherlands B.V. Method and exposure apparatus for performing a tilted focus and a device manufactured accordingly
US20080024745A1 (en) * 2006-07-31 2008-01-31 Asml Netherlands B.V. Patterning device utilizing sets of stepped mirrors and method of using same

Also Published As

Publication number Publication date
US20110200946A1 (en) 2011-08-18
WO2010034382A1 (en) 2010-04-01
CN102171614B (zh) 2012-08-08
US9529276B2 (en) 2016-12-27
JP5634403B2 (ja) 2014-12-03
DE102008042438B4 (de) 2010-11-04
CN102171614A (zh) 2011-08-31
JP2012504320A (ja) 2012-02-16
KR20110059721A (ko) 2011-06-03
DE102008042438A1 (de) 2010-04-08
TW201017344A (en) 2010-05-01
TWI483082B (zh) 2015-05-01

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