JP2012503171A - 高温ChemFET排気ガスセンサ用の排気ガス用の保護層 - Google Patents
高温ChemFET排気ガスセンサ用の排気ガス用の保護層 Download PDFInfo
- Publication number
- JP2012503171A JP2012503171A JP2011526436A JP2011526436A JP2012503171A JP 2012503171 A JP2012503171 A JP 2012503171A JP 2011526436 A JP2011526436 A JP 2011526436A JP 2011526436 A JP2011526436 A JP 2011526436A JP 2012503171 A JP2012503171 A JP 2012503171A
- Authority
- JP
- Japan
- Prior art keywords
- protective layer
- sensitive
- sensitive component
- layer
- sensor element
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000011241 protective layer Substances 0.000 title claims abstract description 75
- 239000010410 layer Substances 0.000 claims abstract description 83
- 239000000463 material Substances 0.000 claims abstract description 61
- 230000000873 masking effect Effects 0.000 claims abstract description 51
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims abstract description 18
- 238000004519 manufacturing process Methods 0.000 claims abstract description 18
- 239000001301 oxygen Substances 0.000 claims abstract description 18
- 229910052760 oxygen Inorganic materials 0.000 claims abstract description 18
- 239000007789 gas Substances 0.000 claims description 95
- 238000000034 method Methods 0.000 claims description 41
- 230000005669 field effect Effects 0.000 claims description 29
- 229920000642 polymer Polymers 0.000 claims description 21
- 238000007750 plasma spraying Methods 0.000 claims description 16
- 239000000203 mixture Substances 0.000 claims description 12
- 239000002904 solvent Substances 0.000 claims description 10
- 229910010293 ceramic material Inorganic materials 0.000 claims description 9
- 238000000197 pyrolysis Methods 0.000 claims description 8
- 230000008569 process Effects 0.000 claims description 7
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 6
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 6
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 6
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 6
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 claims description 5
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 claims description 5
- 239000000725 suspension Substances 0.000 claims description 5
- 238000007641 inkjet printing Methods 0.000 claims description 4
- 238000007639 printing Methods 0.000 claims description 4
- 238000007598 dipping method Methods 0.000 claims description 3
- RVTZCBVAJQQJTK-UHFFFAOYSA-N oxygen(2-);zirconium(4+) Chemical compound [O-2].[O-2].[Zr+4] RVTZCBVAJQQJTK-UHFFFAOYSA-N 0.000 claims description 3
- 238000004528 spin coating Methods 0.000 claims description 3
- 229910001928 zirconium oxide Inorganic materials 0.000 claims description 3
- 239000004408 titanium dioxide Substances 0.000 claims description 2
- 239000000470 constituent Substances 0.000 claims 2
- 238000000576 coating method Methods 0.000 description 21
- 239000011248 coating agent Substances 0.000 description 19
- 239000000758 substrate Substances 0.000 description 16
- 239000004065 semiconductor Substances 0.000 description 15
- 238000002485 combustion reaction Methods 0.000 description 7
- 239000004020 conductor Substances 0.000 description 7
- 239000000178 monomer Substances 0.000 description 7
- 239000002245 particle Substances 0.000 description 7
- 238000005979 thermal decomposition reaction Methods 0.000 description 7
- 230000008901 benefit Effects 0.000 description 6
- MWUXSHHQAYIFBG-UHFFFAOYSA-N nitrogen oxide Inorganic materials O=[N] MWUXSHHQAYIFBG-UHFFFAOYSA-N 0.000 description 6
- -1 polyacetates Polymers 0.000 description 6
- 239000000919 ceramic Substances 0.000 description 5
- 230000008859 change Effects 0.000 description 5
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 4
- 239000012491 analyte Substances 0.000 description 4
- 230000006378 damage Effects 0.000 description 4
- 238000000354 decomposition reaction Methods 0.000 description 4
- 238000002161 passivation Methods 0.000 description 4
- 229920001451 polypropylene glycol Polymers 0.000 description 4
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 3
- XEKOWRVHYACXOJ-UHFFFAOYSA-N Ethyl acetate Chemical compound CCOC(C)=O XEKOWRVHYACXOJ-UHFFFAOYSA-N 0.000 description 3
- 229910004298 SiO 2 Inorganic materials 0.000 description 3
- 229920005601 base polymer Polymers 0.000 description 3
- 238000006243 chemical reaction Methods 0.000 description 3
- 229920001577 copolymer Polymers 0.000 description 3
- 238000001514 detection method Methods 0.000 description 3
- 238000001035 drying Methods 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 229920000058 polyacrylate Polymers 0.000 description 3
- 239000007858 starting material Substances 0.000 description 3
- 238000007751 thermal spraying Methods 0.000 description 3
- 230000008646 thermal stress Effects 0.000 description 3
- YEJRWHAVMIAJKC-UHFFFAOYSA-N 4-Butyrolactone Chemical compound O=C1CCCO1 YEJRWHAVMIAJKC-UHFFFAOYSA-N 0.000 description 2
- 239000004953 Aliphatic polyamide Substances 0.000 description 2
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 description 2
- 239000004593 Epoxy Substances 0.000 description 2
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 2
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 2
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- 229920003171 Poly (ethylene oxide) Polymers 0.000 description 2
- 229920001665 Poly-4-vinylphenol Polymers 0.000 description 2
- 239000002202 Polyethylene glycol Substances 0.000 description 2
- NIXOWILDQLNWCW-UHFFFAOYSA-M acrylate group Chemical group C(C=C)(=O)[O-] NIXOWILDQLNWCW-UHFFFAOYSA-M 0.000 description 2
- 239000011149 active material Substances 0.000 description 2
- 229920003231 aliphatic polyamide Polymers 0.000 description 2
- 229910021529 ammonia Inorganic materials 0.000 description 2
- 239000002800 charge carrier Substances 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- 230000007797 corrosion Effects 0.000 description 2
- 238000005260 corrosion Methods 0.000 description 2
- JHIVVAPYMSGYDF-UHFFFAOYSA-N cyclohexanone Chemical compound O=C1CCCCC1 JHIVVAPYMSGYDF-UHFFFAOYSA-N 0.000 description 2
- BGTOWKSIORTVQH-UHFFFAOYSA-N cyclopentanone Chemical compound O=C1CCCC1 BGTOWKSIORTVQH-UHFFFAOYSA-N 0.000 description 2
- 125000003700 epoxy group Chemical group 0.000 description 2
- 125000000524 functional group Chemical group 0.000 description 2
- 229930195733 hydrocarbon Natural products 0.000 description 2
- 150000002430 hydrocarbons Chemical class 0.000 description 2
- 239000001257 hydrogen Substances 0.000 description 2
- 229910052739 hydrogen Inorganic materials 0.000 description 2
- CERQOIWHTDAKMF-UHFFFAOYSA-M methacrylate group Chemical group C(C(=C)C)(=O)[O-] CERQOIWHTDAKMF-UHFFFAOYSA-M 0.000 description 2
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 2
- 229920001643 poly(ether ketone) Polymers 0.000 description 2
- 239000004417 polycarbonate Substances 0.000 description 2
- 229920000515 polycarbonate Polymers 0.000 description 2
- 229920000728 polyester Polymers 0.000 description 2
- 229920000570 polyether Polymers 0.000 description 2
- 229920001223 polyethylene glycol Polymers 0.000 description 2
- 229920001855 polyketal Polymers 0.000 description 2
- 229920002635 polyurethane Polymers 0.000 description 2
- 239000004814 polyurethane Substances 0.000 description 2
- 239000011148 porous material Substances 0.000 description 2
- 239000000843 powder Substances 0.000 description 2
- 230000005855 radiation Effects 0.000 description 2
- 238000003847 radiation curing Methods 0.000 description 2
- 229910021332 silicide Inorganic materials 0.000 description 2
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 2
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 2
- 239000007921 spray Substances 0.000 description 2
- 230000035882 stress Effects 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 229910052715 tantalum Inorganic materials 0.000 description 2
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 2
- 229920001897 terpolymer Polymers 0.000 description 2
- 229920001187 thermosetting polymer Polymers 0.000 description 2
- VXKUOGVOWWPRNM-UHFFFAOYSA-N 3-ethoxypropyl acetate Chemical compound CCOCCCOC(C)=O VXKUOGVOWWPRNM-UHFFFAOYSA-N 0.000 description 1
- CCTFMNIEFHGTDU-UHFFFAOYSA-N 3-methoxypropyl acetate Chemical compound COCCCOC(C)=O CCTFMNIEFHGTDU-UHFFFAOYSA-N 0.000 description 1
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- 229910002601 GaN Inorganic materials 0.000 description 1
- SECXISVLQFMRJM-UHFFFAOYSA-N N-Methylpyrrolidone Chemical compound CN1CCCC1=O SECXISVLQFMRJM-UHFFFAOYSA-N 0.000 description 1
- GEIAQOFPUVMAGM-UHFFFAOYSA-N Oxozirconium Chemical compound [Zr]=O GEIAQOFPUVMAGM-UHFFFAOYSA-N 0.000 description 1
- 229930182556 Polyacetal Natural products 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 1
- 238000003848 UV Light-Curing Methods 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 229920006109 alicyclic polymer Polymers 0.000 description 1
- 125000001931 aliphatic group Chemical group 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 125000003118 aryl group Chemical group 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 239000011651 chromium Substances 0.000 description 1
- 238000001723 curing Methods 0.000 description 1
- XXTZHYXQVWRADW-UHFFFAOYSA-N diazomethanone Chemical compound [N]N=C=O XXTZHYXQVWRADW-UHFFFAOYSA-N 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- OZLBDYMWFAHSOQ-UHFFFAOYSA-N diphenyliodanium Chemical class C=1C=CC=CC=1[I+]C1=CC=CC=C1 OZLBDYMWFAHSOQ-UHFFFAOYSA-N 0.000 description 1
- 239000007772 electrode material Substances 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- UHKJHMOIRYZSTH-UHFFFAOYSA-N ethyl 2-ethoxypropanoate Chemical compound CCOC(C)C(=O)OCC UHKJHMOIRYZSTH-UHFFFAOYSA-N 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 230000001771 impaired effect Effects 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 230000003993 interaction Effects 0.000 description 1
- 238000011835 investigation Methods 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 238000001459 lithography Methods 0.000 description 1
- 238000011068 loading method Methods 0.000 description 1
- FPYJFEHAWHCUMM-UHFFFAOYSA-N maleic anhydride Chemical compound O=C1OC(=O)C=C1 FPYJFEHAWHCUMM-UHFFFAOYSA-N 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 230000006855 networking Effects 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 239000002861 polymer material Substances 0.000 description 1
- 229920000193 polymethacrylate Polymers 0.000 description 1
- 229920006324 polyoxymethylene Polymers 0.000 description 1
- 230000035939 shock Effects 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Chemical compound [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 description 1
- 238000005245 sintering Methods 0.000 description 1
- 238000001179 sorption measurement Methods 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
- 230000006641 stabilisation Effects 0.000 description 1
- 238000011105 stabilization Methods 0.000 description 1
- SJMYWORNLPSJQO-UHFFFAOYSA-N tert-butyl 2-methylprop-2-enoate Chemical compound CC(=C)C(=O)OC(C)(C)C SJMYWORNLPSJQO-UHFFFAOYSA-N 0.000 description 1
- AGKLVMVJXDFIGC-UHFFFAOYSA-N tert-butyl 3-phenylprop-2-enoate Chemical compound CC(C)(C)OC(=O)C=CC1=CC=CC=C1 AGKLVMVJXDFIGC-UHFFFAOYSA-N 0.000 description 1
- 125000000999 tert-butyl group Chemical group [H]C([H])([H])C(*)(C([H])([H])[H])C([H])([H])[H] 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- WLOQLWBIJZDHET-UHFFFAOYSA-N triphenylsulfonium Chemical class C1=CC=CC=C1[S+](C=1C=CC=CC=1)C1=CC=CC=C1 WLOQLWBIJZDHET-UHFFFAOYSA-N 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Images
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N27/00—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means
- G01N27/26—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating electrochemical variables; by using electrolysis or electrophoresis
- G01N27/403—Cells and electrode assemblies
- G01N27/414—Ion-sensitive or chemical field-effect transistors, i.e. ISFETS or CHEMFETS
- G01N27/4141—Ion-sensitive or chemical field-effect transistors, i.e. ISFETS or CHEMFETS specially adapted for gases
Landscapes
- Life Sciences & Earth Sciences (AREA)
- Chemical & Material Sciences (AREA)
- Health & Medical Sciences (AREA)
- Physics & Mathematics (AREA)
- Biochemistry (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Electrochemistry (AREA)
- Engineering & Computer Science (AREA)
- Analytical Chemistry (AREA)
- Molecular Biology (AREA)
- General Health & Medical Sciences (AREA)
- General Physics & Mathematics (AREA)
- Immunology (AREA)
- Pathology (AREA)
- Investigating Or Analyzing Materials By The Use Of Electric Means (AREA)
- Investigating Or Analyzing Materials By The Use Of Fluid Adsorption Or Reactions (AREA)
Abstract
Description
本発明の利点
少なくとも1つの感受性の構成部材を有するセンサ素子の本発明による製造方法は、次の工程を有する:
(a) 熱的に残らず分解可能な材料からなるマスキング層を前記感受性の構成部材上に設けて、前記感受性の構成部材をマスキング層によって完全に覆う工程、
(b) 前記マスキング層上に温度安定性の材料からなる保護層を設ける工程、
(c) 前記マスキング層を熱分解又は低温運転される酸素プラズマにより除去する工程。
図1〜4は、ガス感受性電界効果トランジスタの実施例に関する本発明によるセンサ素子の製造のための方法工程を表す。
Claims (13)
- 少なくとも1つの感受性の構成部材(3)を有するセンサ素子(1)の製造方法において、次の工程:
(a) 熱的に残らず分解可能な材料からなるマスキング層(31)を前記感応性の構成部材(3)上に設けて、前記感応性の構成部材(3)を前記マスキング層(31)によってほぼ完全に覆う工程、
(b) 前記マスキング層(31)上に温度安定性の材料からなる保護層(33)を設ける工程、
(c) 前記マスキング層(31)を熱分解又は低温運転される酸素プラズマにより除去する工程
を有する、センサ素子(1)の製造方法。 - 前記熱的に残らず分解可能な材料は熱分解可能なポリマーであることを特徴とする、請求項1記載の方法。
- 前記温度安定性の材料は、セラミック材料、特に窒化ケイ素、酸化ケイ素、酸化アルミニウム、酸化ジルコニウム、二酸化チタン又はこれらの混合物であることを特徴とする、請求項1又は2記載の方法。
- 前記熱的に残らず分解可能な材料を、前記感受性の構成部材(3)上に10μm〜2mmの範囲内の層厚で設けることを特徴とする、請求項1から3までのいずれか1項記載の方法。
- 前記熱的に残らず分解可能な材料を、ディスペンス、インクジェット印刷、タンポ印刷、スピンコーティング又はディッピングにより前記感受性の構成部材(3)上に設けることを特徴とする、請求項1から4までのいずれか1項記載の方法。
- 前記熱的に残らず分解可能な材料を、前記感受性の構成部材(3)上に設けるために、溶剤中に溶解させるか又は溶剤中に懸濁液として存在させることを特徴とする、請求項1から5までのいずれか1項記載の方法。
- 前記感受性の構成部材(3)を、熱的に残らず分解可能な材料からなる前記マスキング層(31)を設けた後に前記溶剤を除去するために乾燥することを特徴とする、請求項6記載の方法。
- 前記保護層(33)用の前記温度安定性の材料をプラズマ溶射法によって設けることを特徴とする、請求項1から7までのいずれか1項記載の方法。
- 前記保護層(33)の温度安定性の材料を、工程(c)における熱分解の間に焼結させることを特徴とする、請求項1から8までのいずれか1項記載の方法。
- 工程(c)における前記熱分解を、酸素リッチの雰囲気の存在で実施することを特徴とする、請求項1から9までのいずれか1項記載の方法。
- 少なくとも1つの感受性の構成部材(3)及び温度安定性の材料からなる保護層(33)を有し、前記感受性の構成部材(3)は前記温度安定性の材料からなる前記保護層(33)により覆われているセンサ素子において、前記感受性の構成部材(3)及び前記保護層(33)は互いに間隔を空けて配置されていることを特徴とする、センサ素子。
- 前記感受性の構成部材(3)はガス感受性電界効果トランジスタであることを特徴とする、請求項11記載のセンサ素子。
- 前記温度安定性の材料からなる前記保護層(33)は多孔性であることを特徴とする、請求項11又は12記載のセンサ素子。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE102008042139A DE102008042139A1 (de) | 2008-09-16 | 2008-09-16 | Abgastaugliche Schutzschichten für Hochtemperatur ChemFET Abgassensoren |
DE102008042139.1 | 2008-09-16 | ||
PCT/EP2009/059118 WO2010031609A1 (de) | 2008-09-16 | 2009-07-16 | Abgastaugliche schutzschichten für hochtemperatur chemfet abgassensoren |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2012503171A true JP2012503171A (ja) | 2012-02-02 |
JP5340390B2 JP5340390B2 (ja) | 2013-11-13 |
Family
ID=41046487
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2011526436A Expired - Fee Related JP5340390B2 (ja) | 2008-09-16 | 2009-07-16 | 高温ChemFET排気ガスセンサ用の排気ガス用の保護層 |
Country Status (6)
Country | Link |
---|---|
US (1) | US20110260219A1 (ja) |
EP (1) | EP2329256A1 (ja) |
JP (1) | JP5340390B2 (ja) |
CN (1) | CN102159941B (ja) |
DE (1) | DE102008042139A1 (ja) |
WO (1) | WO2010031609A1 (ja) |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2016031739A1 (ja) * | 2014-08-29 | 2016-03-03 | 京セラ株式会社 | センサ基板、リード付きセンサ基板およびセンサ装置 |
JP2016085141A (ja) * | 2014-10-27 | 2016-05-19 | 京セラ株式会社 | センサ基板、センサ装置およびセンサ基板の製造方法 |
JP2018525629A (ja) * | 2015-08-05 | 2018-09-06 | エフ.ホフマン−ラ ロシュ アーゲーF. Hoffmann−La Roche Aktiengesellschaft | 非ファラデー性電気化学セルにおける電極としての窒化チタンの使用 |
JP2019168276A (ja) * | 2018-03-22 | 2019-10-03 | 株式会社東芝 | 分子検出素子及び分子検出装置 |
Families Citing this family (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE102009045475B4 (de) * | 2009-10-08 | 2023-06-29 | Robert Bosch Gmbh | Gassensitive Halbleitervorrichtung sowie deren Verwendung |
DE102010001568A1 (de) | 2010-02-04 | 2011-08-04 | Robert Bosch GmbH, 70469 | Elektronisches Bauteil für hohe Temperaturen |
KR101774757B1 (ko) * | 2011-10-13 | 2017-09-07 | 한국전자통신연구원 | 가스 센서, 그의 제조 및 사용 방법 |
DE102012217428A1 (de) * | 2012-09-26 | 2014-03-27 | Robert Bosch Gmbh | Sensor zur Detektion von Teilchen |
DE102012021413B4 (de) * | 2012-10-30 | 2016-06-02 | Infineon Technologies Ag | Sensor mit Maskierung |
GB2542801A (en) * | 2015-09-30 | 2017-04-05 | Cambridge Cmos Sensors Ltd | Micro gas sensor with a gas permeable region |
CN106433310B (zh) * | 2016-09-12 | 2021-03-12 | 清华大学深圳研究生院 | 一种墨水、敏感层、生物传感器及其制备方法 |
CN114045461B (zh) * | 2021-10-29 | 2024-07-19 | 立讯电子科技(昆山)有限公司 | 一种半导体芯片产品及其局部溅镀治具、局部溅镀方法 |
Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5882155A (ja) * | 1981-09-23 | 1983-05-17 | クライテイコン・インコ−ポレ−テツド | 電界効果装置およびその製法 |
JPS63500743A (ja) * | 1985-09-09 | 1988-03-17 | ソノクスコ・インク | インストリ−ム型ガス・センサ− |
JPS63208735A (ja) * | 1987-02-24 | 1988-08-30 | Sharp Corp | 静電容量型圧力センサの製造方法 |
JPS6478141A (en) * | 1987-09-21 | 1989-03-23 | Toshiba Corp | Field effect type solution sensor |
JPH01127943A (ja) * | 1987-11-12 | 1989-05-19 | Daikin Ind Ltd | 可燃性ガスセンサ |
JPH09210944A (ja) * | 1996-01-31 | 1997-08-15 | Mitsuteru Kimura | 半導体ガスセンサ |
JP2003342375A (ja) * | 2002-05-27 | 2003-12-03 | Jsr Corp | 多層配線間の空洞形成用熱分解性有機系ポリマー、膜および多層配線間の空洞形成方法 |
Family Cites Families (44)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3886005A (en) * | 1973-07-13 | 1975-05-27 | Motorola Inc | Method of manufacturing semiconductor devices |
US4020830A (en) | 1975-03-12 | 1977-05-03 | The University Of Utah | Selective chemical sensitive FET transducers |
US4151060A (en) * | 1978-02-01 | 1979-04-24 | Westinghouse Electric Corp. | Solid state filter for gas sensors |
JPS5513828A (en) * | 1978-07-14 | 1980-01-31 | Toyota Motor Corp | Catalyst supporting oxygen sensor element |
JPS5557145A (en) * | 1978-10-23 | 1980-04-26 | Toyota Motor Corp | Manufacture of oxygen sensor element |
JPS5691432A (en) * | 1979-12-25 | 1981-07-24 | Fujitsu Ltd | Method for drying semiconductor substrate |
US4486292A (en) * | 1981-09-23 | 1984-12-04 | Critikon, Inc. | Support and anchoring mechanism for membranes in selectively responsive field effect devices |
DE3314433A1 (de) * | 1983-04-21 | 1984-10-25 | Bosch Gmbh Robert | Verfahren zum aufbringen einer elektrode und einer schutzschicht auf ein substrat |
JPS59220641A (ja) * | 1983-05-30 | 1984-12-12 | Nec Corp | ガス検知素子 |
EP0143437B1 (de) * | 1983-11-26 | 1988-07-27 | BASF Aktiengesellschaft | Verfahren zur Herstellung von Resistmustern und für dieses Verfahren geeigneter Trockenresist |
DD227562A1 (de) * | 1984-05-30 | 1985-09-18 | Adw Ddr | Chemisch sensitiver feldeffekttransistor |
JPS6118857A (ja) * | 1984-07-06 | 1986-01-27 | Ngk Insulators Ltd | 電気化学的セルの製造方法 |
JPS61120055A (ja) * | 1984-11-16 | 1986-06-07 | Ngk Insulators Ltd | 酸素センサの製造法 |
GB8606045D0 (en) * | 1986-03-12 | 1986-04-16 | Emi Plc Thorn | Gas sensitive device |
DE4004172C2 (de) * | 1989-02-14 | 1998-06-04 | Ngk Spark Plug Co | Sauerstoffsensor zur Luft-Brennstoffgemisch-Kontrolle mit einer Schutzschicht, die eine Sauerstoff einschließende Substanz umfaßt, und Verfahren zur Herstellung des Sensors |
US5238884A (en) * | 1990-01-23 | 1993-08-24 | Ngk Insulators, Ltd. | Silicon nitride bodies and a process for producing the same |
JPH08232070A (ja) * | 1994-12-26 | 1996-09-10 | Canon Inc | 堆積膜形成装置及びそれに用いられる電極 |
US5693545A (en) * | 1996-02-28 | 1997-12-02 | Motorola, Inc. | Method for forming a semiconductor sensor FET device |
DE19708770C1 (de) * | 1997-03-04 | 1998-08-27 | Siemens Ag | Gassensor |
DE19751128A1 (de) * | 1997-11-19 | 1999-05-20 | Bosch Gmbh Robert | Sensorelement und Verfahren zur Herstellung eines Sensorelements |
EP0973020B1 (de) * | 1998-07-16 | 2009-06-03 | EPIQ Sensor-Nite N.V. | Elektrischer Temperatur-Sensor mit Mehrfachschicht |
US6228555B1 (en) * | 1999-12-28 | 2001-05-08 | 3M Innovative Properties Company | Thermal mass transfer donor element |
DE60126077D1 (de) * | 2000-05-08 | 2007-03-08 | Vivactis Nv | Verfahren zur hochdurchsatzprofilierung neuer werkstoffe |
US7008812B1 (en) * | 2000-05-30 | 2006-03-07 | Ic Mechanics, Inc. | Manufacture of MEMS structures in sealed cavity using dry-release MEMS device encapsulation |
US20020139670A1 (en) * | 2000-12-18 | 2002-10-03 | Beckmeyer Richard F. | Slip method for making exhaust sensors |
US7943412B2 (en) * | 2001-12-10 | 2011-05-17 | International Business Machines Corporation | Low temperature Bi-CMOS compatible process for MEMS RF resonators and filters |
US8154093B2 (en) * | 2002-01-16 | 2012-04-10 | Nanomix, Inc. | Nano-electronic sensors for chemical and biological analytes, including capacitance and bio-membrane devices |
US6992543B2 (en) * | 2002-11-22 | 2006-01-31 | Raytheon Company | Mems-tuned high power, high efficiency, wide bandwidth power amplifier |
EP1524334A1 (de) * | 2003-10-17 | 2005-04-20 | Siemens Aktiengesellschaft | Schutzschicht zum Schutz eines Bauteils gegen Korrosion und Oxidation bei hohen Temperaturen und Bauteil |
FR2864340B1 (fr) * | 2003-12-19 | 2006-03-24 | Commissariat Energie Atomique | Microcomposant comportant une microcavite hermetique et procede de fabrication d'un tel microcomposant |
US20070212263A1 (en) * | 2004-03-17 | 2007-09-13 | Nat. Inst. Of Adv. Industrial Sci. And Tech. | Micro Thermoelectric Type Gas Sensor |
US20060071785A1 (en) * | 2004-09-27 | 2006-04-06 | Osman Ahmed | Cage telemetry system using intermediate transponders |
US7259449B2 (en) * | 2004-09-27 | 2007-08-21 | Idc, Llc | Method and system for sealing a substrate |
DE102005008051A1 (de) | 2005-02-22 | 2006-08-24 | Siemens Ag | Gassensor und Verfahren zu dessen Betrieb |
US20080300501A1 (en) * | 2005-07-19 | 2008-12-04 | Koninklijke Philips Electronics, N.V. | Fluid Analyser |
US8168053B2 (en) * | 2006-01-23 | 2012-05-01 | Denso Corporation | Gas sensing member used for gas sensor and method of manufacturing the member |
CN101008630A (zh) * | 2006-01-23 | 2007-08-01 | 株式会社电装 | 用于气体传感器的气体检测元件及制造该元件的方法 |
US7560222B2 (en) * | 2006-10-31 | 2009-07-14 | International Business Machines Corporation | Si-containing polymers for nano-pattern device fabrication |
US7659150B1 (en) * | 2007-03-09 | 2010-02-09 | Silicon Clocks, Inc. | Microshells for multi-level vacuum cavities |
US7923790B1 (en) * | 2007-03-09 | 2011-04-12 | Silicon Laboratories Inc. | Planar microshells for vacuum encapsulated devices and damascene method of manufacture |
DE102007040726A1 (de) * | 2007-08-29 | 2009-03-05 | Robert Bosch Gmbh | Gassensor |
EP2212685B1 (en) * | 2007-11-20 | 2017-05-17 | Nxp B.V. | An ionization chamber and method producing the same |
DE102008054752A1 (de) * | 2008-12-16 | 2010-06-17 | Robert Bosch Gmbh | Gassensor mit Feldeffekttransistor |
EP2416147A1 (en) * | 2010-07-29 | 2012-02-08 | Nxp B.V. | Sensor device and manufacturing method |
-
2008
- 2008-09-16 DE DE102008042139A patent/DE102008042139A1/de not_active Withdrawn
-
2009
- 2009-07-16 EP EP09780679A patent/EP2329256A1/de not_active Withdrawn
- 2009-07-16 JP JP2011526436A patent/JP5340390B2/ja not_active Expired - Fee Related
- 2009-07-16 US US12/998,079 patent/US20110260219A1/en not_active Abandoned
- 2009-07-16 CN CN200980136130.5A patent/CN102159941B/zh not_active Expired - Fee Related
- 2009-07-16 WO PCT/EP2009/059118 patent/WO2010031609A1/de active Application Filing
Patent Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5882155A (ja) * | 1981-09-23 | 1983-05-17 | クライテイコン・インコ−ポレ−テツド | 電界効果装置およびその製法 |
JPS63500743A (ja) * | 1985-09-09 | 1988-03-17 | ソノクスコ・インク | インストリ−ム型ガス・センサ− |
JPS63208735A (ja) * | 1987-02-24 | 1988-08-30 | Sharp Corp | 静電容量型圧力センサの製造方法 |
JPS6478141A (en) * | 1987-09-21 | 1989-03-23 | Toshiba Corp | Field effect type solution sensor |
JPH01127943A (ja) * | 1987-11-12 | 1989-05-19 | Daikin Ind Ltd | 可燃性ガスセンサ |
JPH09210944A (ja) * | 1996-01-31 | 1997-08-15 | Mitsuteru Kimura | 半導体ガスセンサ |
JP2003342375A (ja) * | 2002-05-27 | 2003-12-03 | Jsr Corp | 多層配線間の空洞形成用熱分解性有機系ポリマー、膜および多層配線間の空洞形成方法 |
Cited By (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2016031739A1 (ja) * | 2014-08-29 | 2016-03-03 | 京セラ株式会社 | センサ基板、リード付きセンサ基板およびセンサ装置 |
JPWO2016031739A1 (ja) * | 2014-08-29 | 2017-06-01 | 京セラ株式会社 | センサ基板、リード付きセンサ基板およびセンサ装置 |
US10408776B2 (en) | 2014-08-29 | 2019-09-10 | Kyocera Corporation | Sensor board, lead-bearing sensor board, and sensor device |
JP2016085141A (ja) * | 2014-10-27 | 2016-05-19 | 京セラ株式会社 | センサ基板、センサ装置およびセンサ基板の製造方法 |
JP2018525629A (ja) * | 2015-08-05 | 2018-09-06 | エフ.ホフマン−ラ ロシュ アーゲーF. Hoffmann−La Roche Aktiengesellschaft | 非ファラデー性電気化学セルにおける電極としての窒化チタンの使用 |
US11098354B2 (en) | 2015-08-05 | 2021-08-24 | Roche Sequencing Solutions, Inc. | Use of titanium nitride as an electrode in non-faradaic electrochemical cell |
JP2019168276A (ja) * | 2018-03-22 | 2019-10-03 | 株式会社東芝 | 分子検出素子及び分子検出装置 |
Also Published As
Publication number | Publication date |
---|---|
JP5340390B2 (ja) | 2013-11-13 |
CN102159941B (zh) | 2014-12-17 |
EP2329256A1 (de) | 2011-06-08 |
DE102008042139A1 (de) | 2010-03-18 |
WO2010031609A1 (de) | 2010-03-25 |
US20110260219A1 (en) | 2011-10-27 |
CN102159941A (zh) | 2011-08-17 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP5340390B2 (ja) | 高温ChemFET排気ガスセンサ用の排気ガス用の保護層 | |
US10526945B2 (en) | Microchip oxygen sensor for control of internal combustion engines or other combustion processes | |
US8739622B2 (en) | Capacitive humidity detector with nanoporous hydrophilic dielectric | |
Hong et al. | Improved CO gas detection of Si MOSFET gas sensor with catalytic Pt decoration and pre-bias effect | |
EP0853762B1 (en) | Gas sensor and manufacturing process thereof | |
CN102084243B (zh) | 气体传感器和用于制造气体传感器的倒装芯片方法 | |
US10267761B2 (en) | Material for sensing electrode of NOX gas sensor | |
US11371951B2 (en) | Gas sensor comprising a set of one or more sensor cells | |
EP3765839B1 (en) | Alumina doped metal oxide gas sensor | |
EP2952885B1 (en) | Gas sensor | |
KR20080067592A (ko) | 가스 센서 | |
US20120273846A1 (en) | Sensor for Detecting a Component of a Gas Mixture | |
US11167981B2 (en) | Semiconductor device and method of producing a semiconductor device | |
Cho et al. | A metal-oxide gas sensor based on an aerosol jet printing technology featuring a one second response time | |
JP5130398B2 (ja) | ガス成分の濃度測定装置及び濃度測定方法 | |
CN217212395U (zh) | 气体传感器 | |
Tomchenko | Printed chemical sensors: from screen-printing to microprinting∗ | |
JP2006317155A (ja) | ガスセンサおよびその製造方法 | |
US20050023138A1 (en) | Gas sensor with sensing particle receptacles | |
JP4591033B2 (ja) | ガスセンサ素子及びその製造方法 | |
CN114264705B (zh) | 气体传感器 | |
KR100329806B1 (ko) | p형 반도성 물질이 첨가된 WO₃ 고용체로 이루어진 가스 센서 | |
RU1807370C (ru) | Чувствительный элемент датчика водорода | |
RU1807369C (ru) | Чувствительный элемент датчика водорода |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20120926 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20121005 |
|
A601 | Written request for extension of time |
Free format text: JAPANESE INTERMEDIATE CODE: A601 Effective date: 20130107 |
|
A602 | Written permission of extension of time |
Free format text: JAPANESE INTERMEDIATE CODE: A602 Effective date: 20130115 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20130405 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20130507 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20130617 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20130708 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20130806 |
|
R150 | Certificate of patent or registration of utility model |
Ref document number: 5340390 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
LAPS | Cancellation because of no payment of annual fees |