JP2012222182A5 - - Google Patents

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Publication number
JP2012222182A5
JP2012222182A5 JP2011087048A JP2011087048A JP2012222182A5 JP 2012222182 A5 JP2012222182 A5 JP 2012222182A5 JP 2011087048 A JP2011087048 A JP 2011087048A JP 2011087048 A JP2011087048 A JP 2011087048A JP 2012222182 A5 JP2012222182 A5 JP 2012222182A5
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JP
Japan
Prior art keywords
transmission line
layer
ground
line
via layer
Prior art date
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Application number
JP2011087048A
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English (en)
Japanese (ja)
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JP2012222182A (ja
JP5842368B2 (ja
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Priority to JP2011087048A priority Critical patent/JP5842368B2/ja
Priority claimed from JP2011087048A external-priority patent/JP5842368B2/ja
Priority to CN201210092828.5A priority patent/CN102738118B/zh
Priority to US13/439,025 priority patent/US8786061B2/en
Publication of JP2012222182A publication Critical patent/JP2012222182A/ja
Publication of JP2012222182A5 publication Critical patent/JP2012222182A5/ja
Priority to US14/288,165 priority patent/US9343410B2/en
Application granted granted Critical
Publication of JP5842368B2 publication Critical patent/JP5842368B2/ja
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

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JP2011087048A 2011-04-11 2011-04-11 半導体装置 Expired - Fee Related JP5842368B2 (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP2011087048A JP5842368B2 (ja) 2011-04-11 2011-04-11 半導体装置
CN201210092828.5A CN102738118B (zh) 2011-04-11 2012-03-31 半导体器件
US13/439,025 US8786061B2 (en) 2011-04-11 2012-04-04 Semiconductor device
US14/288,165 US9343410B2 (en) 2011-04-11 2014-05-27 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2011087048A JP5842368B2 (ja) 2011-04-11 2011-04-11 半導体装置

Publications (3)

Publication Number Publication Date
JP2012222182A JP2012222182A (ja) 2012-11-12
JP2012222182A5 true JP2012222182A5 (enExample) 2014-05-22
JP5842368B2 JP5842368B2 (ja) 2016-01-13

Family

ID=46965465

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2011087048A Expired - Fee Related JP5842368B2 (ja) 2011-04-11 2011-04-11 半導体装置

Country Status (3)

Country Link
US (2) US8786061B2 (enExample)
JP (1) JP5842368B2 (enExample)
CN (1) CN102738118B (enExample)

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FR2991108A1 (fr) * 2012-05-24 2013-11-29 St Microelectronics Sa Ligne coplanaire blindee
JPWO2016080333A1 (ja) * 2014-11-21 2017-08-24 株式会社村田製作所 モジュール
FR3029301B1 (fr) * 2014-12-01 2017-01-06 Commissariat Energie Atomique Procede de fabrication d'un guide d'onde incluant une jonction semiconductrice
CN105187089B (zh) * 2015-08-24 2018-07-06 小米科技有限责任公司 信号传输装置及终端
US10410939B2 (en) * 2015-12-16 2019-09-10 Intel Corporation Package power delivery using plane and shaped vias
JP6866789B2 (ja) * 2017-07-11 2021-04-28 富士通株式会社 電子デバイス、及び、電子デバイスの製造方法
JP6845118B2 (ja) * 2017-10-25 2021-03-17 株式会社Ｓｏｋｅｎ 高周波伝送線路
KR102777475B1 (ko) 2019-10-17 2025-03-10 에스케이하이닉스 주식회사 반도체 패키지
US11302645B2 (en) * 2020-06-30 2022-04-12 Western Digital Technologies, Inc. Printed circuit board compensation structure for high bandwidth and high die-count memory stacks
US20250038388A1 (en) * 2021-12-21 2025-01-30 Fujikura Ltd. Transmission line
US12334442B2 (en) * 2022-08-31 2025-06-17 International Business Machines Corporation Dielectric caps for power and signal line routing

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JPH08125412A (ja) * 1994-10-19 1996-05-17 Mitsubishi Electric Corp 伝送線路，及びその製造方法
US6307252B1 (en) * 1999-03-05 2001-10-23 Agere Systems Guardian Corp. On-chip shielding of signals
JP4734723B2 (ja) * 2001-01-31 2011-07-27 凸版印刷株式会社 同軸ビアホールを用いた多層配線基板の製造方法
JP3561747B2 (ja) * 2001-03-30 2004-09-02 ユーディナデバイス株式会社 高周波半導体装置の多層配線構造
JP2004363975A (ja) * 2003-06-05 2004-12-24 Matsushita Electric Ind Co Ltd 高周波回路
DE102004060345A1 (de) * 2003-12-26 2005-10-06 Elpida Memory, Inc. Halbleitervorrichtung mit geschichteten Chips
JP4383939B2 (ja) * 2004-03-29 2009-12-16 シャープ株式会社 伝送線路形成方法、伝送線路、半導体チップおよび半導体集積回路ユニット
JP4441328B2 (ja) * 2004-05-25 2010-03-31 株式会社ルネサステクノロジ 半導体装置及びその製造方法
DE102005008195A1 (de) * 2005-02-23 2006-08-24 Atmel Germany Gmbh Hochfrequenzanordnung
US20060255434A1 (en) * 2005-05-12 2006-11-16 Yinon Degani Shielding noisy conductors in integrated passive devices
US20060264029A1 (en) * 2005-05-23 2006-11-23 Intel Corporation Low inductance via structures
US8018067B2 (en) * 2005-08-26 2011-09-13 Koninklijke Philips Electronics N.V. Electrically shielded through-wafer interconnect
WO2007138895A1 (ja) * 2006-05-25 2007-12-06 National Institute Of Advanced Industrial Science And Technology 同軸型ビア接続構造およびその製造方法
JP4735614B2 (ja) * 2007-07-26 2011-07-27 セイコーエプソン株式会社 回路基板
US8028406B2 (en) * 2008-04-03 2011-10-04 International Business Machines Corporation Methods of fabricating coplanar waveguide structures
JP5985136B2 (ja) * 2009-03-19 2016-09-06 ソニー株式会社 半導体装置とその製造方法、及び電子機器
US8487430B1 (en) * 2010-01-21 2013-07-16 Semtech Corporation Multi-layer high-speed integrated circuit ball grid array package and process
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US9087840B2 (en) * 2010-11-01 2015-07-21 Taiwan Semiconductor Manufacturing Company, Ltd. Slot-shielded coplanar strip-line compatible with CMOS processes
US8912581B2 (en) * 2012-03-09 2014-12-16 Taiwan Semiconductor Manufacturing Co., Ltd. 3D transmission lines for semiconductors
US8912634B2 (en) * 2012-03-29 2014-12-16 International Business Machines Corporation High frequency transition matching in an electronic package for millimeter wave semiconductor dies

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