JP2012216565A - 半導体ウエーハの加工方法 - Google Patents
半導体ウエーハの加工方法 Download PDFInfo
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- JP2012216565A JP2012216565A JP2011078852A JP2011078852A JP2012216565A JP 2012216565 A JP2012216565 A JP 2012216565A JP 2011078852 A JP2011078852 A JP 2011078852A JP 2011078852 A JP2011078852 A JP 2011078852A JP 2012216565 A JP2012216565 A JP 2012216565A
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 82
- 238000000034 method Methods 0.000 title claims abstract description 28
- 238000012545 processing Methods 0.000 title claims abstract description 21
- 238000000227 grinding Methods 0.000 claims abstract description 50
- 239000000758 substrate Substances 0.000 claims abstract description 45
- 230000002093 peripheral effect Effects 0.000 claims abstract description 18
- 238000012805 post-processing Methods 0.000 claims abstract description 8
- 230000001681 protective effect Effects 0.000 claims description 29
- 238000005520 cutting process Methods 0.000 claims description 16
- 239000000853 adhesive Substances 0.000 abstract description 23
- 238000010438 heat treatment Methods 0.000 abstract description 3
- 235000012431 wafers Nutrition 0.000 description 108
- 230000001070 adhesive effect Effects 0.000 description 22
- 238000003672 processing method Methods 0.000 description 9
- 230000015572 biosynthetic process Effects 0.000 description 7
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 4
- 238000003754 machining Methods 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 4
- 239000002184 metal Substances 0.000 description 4
- 229910052710 silicon Inorganic materials 0.000 description 4
- 239000010703 silicon Substances 0.000 description 4
- 238000010586 diagram Methods 0.000 description 3
- 230000035515 penetration Effects 0.000 description 3
- 238000005476 soldering Methods 0.000 description 3
- 238000011282 treatment Methods 0.000 description 3
- 125000004122 cyclic group Chemical group 0.000 description 2
- 230000000149 penetrating effect Effects 0.000 description 2
- 238000001311 chemical methods and process Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 230000009191 jumping Effects 0.000 description 1
- 238000003475 lamination Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000001020 plasma etching Methods 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000009966 trimming Methods 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B51/00—Arrangements for automatic control of a series of individual steps in grinding a workpiece
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B7/00—Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor
- B24B7/20—Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor characterised by a special design with respect to properties of the material of non-metallic articles to be ground
- B24B7/22—Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor characterised by a special design with respect to properties of the material of non-metallic articles to be ground for grinding inorganic material, e.g. stone, ceramics, porcelain
- B24B7/228—Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor characterised by a special design with respect to properties of the material of non-metallic articles to be ground for grinding inorganic material, e.g. stone, ceramics, porcelain for grinding thin, brittle parts, e.g. semiconductors, wafers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L21/6836—Wafer tapes, e.g. grinding or dicing support tapes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
- H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
- H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L2221/68327—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used during dicing or grinding
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- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Mechanical Engineering (AREA)
- Ceramic Engineering (AREA)
- Inorganic Chemistry (AREA)
- Chemical & Material Sciences (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
Abstract
【解決手段】半導体ウエーハ11の表面に保護テープを貼着する保護テープ貼着ステップと、保護テープ貼着ステップを実施した後、半導体ウエーハ11のデバイス領域に対応した裏面を研削して円形凹部32を形成するとともに円形凹部32を囲繞する外周余剰領域を含む環状凸部34を形成する研削ステップと、研削ステップを実施した後、保護テープを半導体ウエーハ11の表面から除去する保護テープ除去ステップと、保護テープ除去ステップを実施した後、半導体ウエーハ11の外周部のみを接着して半導体ウエーハ11の表面にサブストレート36を配設するサブストレート配設ステップと、サブストレート36が表面に配設された半導体ウエーハ11に後処理を施す後処理ステップとを具備した。
【選択図】図14
Description
12 貫通電極
14 保護テープ
17 デバイス領域
19 外周余剰領域
32 円形凹部
34 環状凸部
36 サブストレート
38,42,46 接着剤
40 保護部材(第2サブストレート)
44 保護部材(保護シート)
Claims (2)
- 複数の交差する分割予定ラインで区画された各領域にそれぞれ半導体デバイスが形成されたデバイス領域と該デバイス領域を囲繞する外周余剰領域とを表面に有する半導体ウエーハの加工方法であって、
半導体ウエーハの該表面に保護テープを貼着する保護テープ貼着ステップと、
該保護テープ貼着ステップを実施した後、半導体ウエーハの該デバイス領域に対応した裏面を研削して円形凹部を形成するとともに該円形凹部を囲繞する該外周余剰領域を含む環状凸部を形成する研削ステップと、
該研削ステップを実施した後、該保護テープを半導体ウエーハの該表面から除去する保護テープ除去ステップと、
該保護テープ除去ステップを実施した後、半導体ウエーハの外周部のみを接着して半導体ウエーハの該表面にサブストレートを配設するサブストレート配設ステップと、
該サブストレートが該表面に配設された半導体ウエーハに後処理を施す後処理ステップと、
を具備したことを特徴とする半導体ウエーハの加工方法。 - 該後処理ステップ実施後、半導体ウエーハを円形に切削して該デバイス領域を該外周余剰領域から切り離す円形切削ステップを更に具備した請求項1記載の半導体ウエーハの加工方法。
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2011078852A JP5936312B2 (ja) | 2011-03-31 | 2011-03-31 | 半導体ウエーハの加工方法 |
DE201210205251 DE102012205251A1 (de) | 2011-03-31 | 2012-03-30 | Halbleiterbearbeitungsverfahren |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2011078852A JP5936312B2 (ja) | 2011-03-31 | 2011-03-31 | 半導体ウエーハの加工方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2012216565A true JP2012216565A (ja) | 2012-11-08 |
JP5936312B2 JP5936312B2 (ja) | 2016-06-22 |
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JP2011078852A Active JP5936312B2 (ja) | 2011-03-31 | 2011-03-31 | 半導体ウエーハの加工方法 |
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JP (1) | JP5936312B2 (ja) |
DE (1) | DE102012205251A1 (ja) |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR20150037846A (ko) * | 2012-07-30 | 2015-04-08 | 에리히 탈너 | 기판들을 본딩하기 위한 기판 조립체, 방법 및 장치 |
WO2016056124A1 (ja) * | 2014-10-10 | 2016-04-14 | 三菱電機株式会社 | 半導体装置の製造方法 |
CN109478561A (zh) * | 2016-07-20 | 2019-03-15 | 三菱电机株式会社 | 半导体装置以及其制造方法 |
CN114378712A (zh) * | 2021-12-30 | 2022-04-22 | 青岛嘉展力拓半导体有限责任公司 | 一种碳化硅减薄加工使弯曲度集中的方法 |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN108701652B (zh) | 2016-03-01 | 2023-11-21 | 英飞凌科技股份有限公司 | 复合晶片,半导体器件,电子部件和制造半导体器件的方法 |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2005123568A (ja) * | 2003-09-26 | 2005-05-12 | Disco Abrasive Syst Ltd | ウェーハの加工方法 |
JP2007019461A (ja) * | 2005-04-27 | 2007-01-25 | Disco Abrasive Syst Ltd | ウェーハの加工方法及びウェーハ |
JP2007134390A (ja) * | 2005-11-08 | 2007-05-31 | Disco Abrasive Syst Ltd | ウエーハの加工方法 |
JP2011040511A (ja) * | 2009-08-10 | 2011-02-24 | Disco Abrasive Syst Ltd | ウエーハの研削方法 |
Family Cites Families (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2004207606A (ja) | 2002-12-26 | 2004-07-22 | Disco Abrasive Syst Ltd | ウェーハサポートプレート |
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2011
- 2011-03-31 JP JP2011078852A patent/JP5936312B2/ja active Active
-
2012
- 2012-03-30 DE DE201210205251 patent/DE102012205251A1/de active Pending
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2005123568A (ja) * | 2003-09-26 | 2005-05-12 | Disco Abrasive Syst Ltd | ウェーハの加工方法 |
JP2007019461A (ja) * | 2005-04-27 | 2007-01-25 | Disco Abrasive Syst Ltd | ウェーハの加工方法及びウェーハ |
JP2007134390A (ja) * | 2005-11-08 | 2007-05-31 | Disco Abrasive Syst Ltd | ウエーハの加工方法 |
JP2011040511A (ja) * | 2009-08-10 | 2011-02-24 | Disco Abrasive Syst Ltd | ウエーハの研削方法 |
Cited By (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR20150037846A (ko) * | 2012-07-30 | 2015-04-08 | 에리히 탈너 | 기판들을 본딩하기 위한 기판 조립체, 방법 및 장치 |
JP2015523737A (ja) * | 2012-07-30 | 2015-08-13 | エリッヒ・タールナー | 基板アセンブリ、基板をボンディングする方法および装置 |
KR102014574B1 (ko) | 2012-07-30 | 2019-08-26 | 에리히 탈너 | 기판들을 본딩하기 위한 기판 조립체, 방법 및 장치 |
WO2016056124A1 (ja) * | 2014-10-10 | 2016-04-14 | 三菱電機株式会社 | 半導体装置の製造方法 |
JPWO2016056124A1 (ja) * | 2014-10-10 | 2017-04-27 | 三菱電機株式会社 | 半導体装置の製造方法 |
CN106796874A (zh) * | 2014-10-10 | 2017-05-31 | 三菱电机株式会社 | 半导体装置的制造方法 |
US10134598B2 (en) | 2014-10-10 | 2018-11-20 | Mitsubishi Electric Corporation | Method for manufacturing semiconductor device |
CN106796874B (zh) * | 2014-10-10 | 2019-06-28 | 三菱电机株式会社 | 半导体装置的制造方法 |
CN109478561A (zh) * | 2016-07-20 | 2019-03-15 | 三菱电机株式会社 | 半导体装置以及其制造方法 |
CN114378712A (zh) * | 2021-12-30 | 2022-04-22 | 青岛嘉展力拓半导体有限责任公司 | 一种碳化硅减薄加工使弯曲度集中的方法 |
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Publication number | Publication date |
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DE102012205251A1 (de) | 2012-10-04 |
JP5936312B2 (ja) | 2016-06-22 |
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