JP2012204378A5 - - Google Patents

Download PDF

Info

Publication number
JP2012204378A5
JP2012204378A5 JP2011064668A JP2011064668A JP2012204378A5 JP 2012204378 A5 JP2012204378 A5 JP 2012204378A5 JP 2011064668 A JP2011064668 A JP 2011064668A JP 2011064668 A JP2011064668 A JP 2011064668A JP 2012204378 A5 JP2012204378 A5 JP 2012204378A5
Authority
JP
Japan
Prior art keywords
semiconductor layer
periodic
outermost periphery
array structure
conductivity type
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2011064668A
Other languages
English (en)
Japanese (ja)
Other versions
JP2012204378A (ja
JP5641995B2 (ja
Filing date
Publication date
Application filed filed Critical
Priority to JP2011064668A priority Critical patent/JP5641995B2/ja
Priority claimed from JP2011064668A external-priority patent/JP5641995B2/ja
Priority to CN201210061291.6A priority patent/CN102694029B/zh
Priority to US13/424,340 priority patent/US8482028B2/en
Publication of JP2012204378A publication Critical patent/JP2012204378A/ja
Publication of JP2012204378A5 publication Critical patent/JP2012204378A5/ja
Application granted granted Critical
Publication of JP5641995B2 publication Critical patent/JP5641995B2/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

JP2011064668A 2011-03-23 2011-03-23 半導体素子 Active JP5641995B2 (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2011064668A JP5641995B2 (ja) 2011-03-23 2011-03-23 半導体素子
CN201210061291.6A CN102694029B (zh) 2011-03-23 2012-03-09 半导体元件
US13/424,340 US8482028B2 (en) 2011-03-23 2012-03-19 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2011064668A JP5641995B2 (ja) 2011-03-23 2011-03-23 半導体素子

Publications (3)

Publication Number Publication Date
JP2012204378A JP2012204378A (ja) 2012-10-22
JP2012204378A5 true JP2012204378A5 (https=) 2013-09-19
JP5641995B2 JP5641995B2 (ja) 2014-12-17

Family

ID=46859381

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2011064668A Active JP5641995B2 (ja) 2011-03-23 2011-03-23 半導体素子

Country Status (3)

Country Link
US (1) US8482028B2 (https=)
JP (1) JP5641995B2 (https=)
CN (1) CN102694029B (https=)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9484451B2 (en) 2007-10-05 2016-11-01 Vishay-Siliconix MOSFET active area and edge termination area charge balance
JP2012074441A (ja) 2010-09-28 2012-04-12 Toshiba Corp 電力用半導体装置
US9842911B2 (en) 2012-05-30 2017-12-12 Vishay-Siliconix Adaptive charge balanced edge termination
US9887259B2 (en) * 2014-06-23 2018-02-06 Vishay-Siliconix Modulated super junction power MOSFET devices
JP6375176B2 (ja) * 2014-08-13 2018-08-15 ルネサスエレクトロニクス株式会社 半導体装置および半導体装置の製造方法
KR102098996B1 (ko) 2014-08-19 2020-04-08 비쉐이-실리코닉스 초접합 금속 산화물 반도체 전계 효과 트랜지스터

Family Cites Families (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3988262B2 (ja) 1998-07-24 2007-10-10 富士電機デバイステクノロジー株式会社 縦型超接合半導体素子およびその製造方法
DE19840032C1 (de) 1998-09-02 1999-11-18 Siemens Ag Halbleiterbauelement und Herstellungsverfahren dazu
JP3751463B2 (ja) 1999-03-23 2006-03-01 株式会社東芝 高耐圧半導体素子
JP4765012B2 (ja) * 2000-02-09 2011-09-07 富士電機株式会社 半導体装置及びその製造方法
US7638841B2 (en) * 2003-05-20 2009-12-29 Fairchild Semiconductor Corporation Power semiconductor devices and methods of manufacture
JP4882212B2 (ja) * 2003-08-20 2012-02-22 株式会社デンソー 縦型半導体装置
JP4289123B2 (ja) * 2003-10-29 2009-07-01 富士電機デバイステクノロジー株式会社 半導体装置
US7352036B2 (en) * 2004-08-03 2008-04-01 Fairchild Semiconductor Corporation Semiconductor power device having a top-side drain using a sinker trench
US7659588B2 (en) * 2006-01-26 2010-02-09 Siliconix Technology C. V. Termination for a superjunction device
JP5052025B2 (ja) * 2006-03-29 2012-10-17 株式会社東芝 電力用半導体素子
JP5188037B2 (ja) * 2006-06-20 2013-04-24 株式会社東芝 半導体装置
US7737469B2 (en) 2006-05-16 2010-06-15 Kabushiki Kaisha Toshiba Semiconductor device having superjunction structure formed of p-type and n-type pillar regions
JP4620075B2 (ja) * 2007-04-03 2011-01-26 株式会社東芝 電力用半導体素子
JP4564516B2 (ja) * 2007-06-21 2010-10-20 株式会社東芝 半導体装置
DE102007036147B4 (de) * 2007-08-02 2017-12-21 Infineon Technologies Austria Ag Verfahren zum Herstellen eines Halbleiterkörpers mit einer Rekombinationszone
US8174067B2 (en) * 2008-12-08 2012-05-08 Fairchild Semiconductor Corporation Trench-based power semiconductor devices with increased breakdown voltage characteristics
US8148749B2 (en) * 2009-02-19 2012-04-03 Fairchild Semiconductor Corporation Trench-shielded semiconductor device
JP5718627B2 (ja) * 2010-03-15 2015-05-13 ルネサスエレクトロニクス株式会社 半導体装置

Similar Documents

Publication Publication Date Title
JP2009231824A5 (ja) 半導体装置
JP2010283339A5 (ja) 光電変換装置
JP2012113305A5 (https=)
JP2013179097A5 (ja) 表示装置
JP2012033908A5 (https=)
JP2013211537A5 (https=)
JP2014082388A5 (https=)
JP2012204378A5 (https=)
JP2012151454A5 (https=)
JP2014099429A5 (https=)
JP2012064849A5 (https=)
JP2010186994A5 (ja) 半導体装置
JP2012199534A5 (https=)
JP2013178522A5 (ja) 半導体装置
JP2013149964A5 (ja) 半導体素子
JP2012256838A5 (https=)
JP2010206187A5 (ja) 半導体装置
JP2015228014A5 (ja) 表示装置
JP2012256402A5 (ja) 半導体装置
JP2011077515A5 (ja) 半導体装置
JP2012169610A5 (ja) 半導体装置
JP2016015485A5 (ja) 撮像装置及び電子機器
JP2014078001A5 (ja) 液晶表示装置
JP2016034040A5 (ja) 表示装置
JP2013077764A5 (https=)