JP2012191187A5 - - Google Patents

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Publication number
JP2012191187A5
JP2012191187A5 JP2012034643A JP2012034643A JP2012191187A5 JP 2012191187 A5 JP2012191187 A5 JP 2012191187A5 JP 2012034643 A JP2012034643 A JP 2012034643A JP 2012034643 A JP2012034643 A JP 2012034643A JP 2012191187 A5 JP2012191187 A5 JP 2012191187A5
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JP
Japan
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silicon substrate
crystalline silicon
conductive film
semiconductor layer
electrode
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JP2012034643A
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English (en)
Japanese (ja)
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JP2012191187A (ja
JP5897926B2 (ja
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Priority to JP2012034643A priority Critical patent/JP5897926B2/ja
Priority claimed from JP2012034643A external-priority patent/JP5897926B2/ja
Publication of JP2012191187A publication Critical patent/JP2012191187A/ja
Publication of JP2012191187A5 publication Critical patent/JP2012191187A5/ja
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Publication of JP5897926B2 publication Critical patent/JP5897926B2/ja
Expired - Fee Related legal-status Critical Current
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JP2012034643A 2011-02-21 2012-02-21 光電変換装置 Expired - Fee Related JP5897926B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2012034643A JP5897926B2 (ja) 2011-02-21 2012-02-21 光電変換装置

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2011034575 2011-02-21
JP2011034575 2011-02-21
JP2012034643A JP5897926B2 (ja) 2011-02-21 2012-02-21 光電変換装置

Publications (3)

Publication Number Publication Date
JP2012191187A JP2012191187A (ja) 2012-10-04
JP2012191187A5 true JP2012191187A5 (OSRAM) 2015-03-05
JP5897926B2 JP5897926B2 (ja) 2016-04-06

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JP2012034643A Expired - Fee Related JP5897926B2 (ja) 2011-02-21 2012-02-21 光電変換装置

Country Status (2)

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US (1) US9437758B2 (OSRAM)
JP (1) JP5897926B2 (OSRAM)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20120095790A (ko) * 2011-02-21 2012-08-29 가부시키가이샤 한도오따이 에네루기 켄큐쇼 광전 변환 장치
JP5640948B2 (ja) * 2011-10-18 2014-12-17 三菱電機株式会社 太陽電池
JP5824618B2 (ja) * 2013-03-01 2015-11-25 パナソニックＩｐマネジメント株式会社 シリコン基板
JP6342386B2 (ja) * 2013-04-01 2018-06-13 シャープ株式会社 光電変換装置
CN105409010A (zh) * 2013-05-10 2016-03-16 Rct解决方案有限责任公司 太阳能电池及其制备方法
JP6072904B2 (ja) * 2013-05-14 2017-02-01 三菱電機株式会社 光起電力素子及びその製造方法
CN107431100B (zh) * 2015-03-31 2019-05-10 松下知识产权经营株式会社 太阳能电池元件、太阳能电池组件、以及制造方法
CN108475706B (zh) * 2016-03-10 2021-11-02 株式会社钟化 太阳能电池模块
WO2018179656A1 (ja) * 2017-03-31 2018-10-04 株式会社カネカ 太陽電池、太陽電池モジュール、および、太陽電池の製造方法
CN109638103A (zh) * 2018-06-05 2019-04-16 中智(泰兴)电力科技有限公司 单晶硅异质结太阳电池用两面差异化绒面结构及制备方法
GB202020727D0 (en) * 2020-12-30 2021-02-10 Rec Solar Pte Ltd Solar cell
CN119497449A (zh) * 2024-11-11 2025-02-21 安徽华晟新能源科技股份有限公司 光伏电池及其制备方法

Family Cites Families (55)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS55120181A (en) 1979-03-09 1980-09-16 Sanyo Electric Co Ltd Fabricating method of photovoltaic device
US4385199A (en) 1980-12-03 1983-05-24 Yoshihiro Hamakawa Photovoltaic cell having a hetero junction of amorphous silicon carbide and amorphous silicon
US4388482A (en) 1981-01-29 1983-06-14 Yoshihiro Hamakawa High-voltage photovoltaic cell having a heterojunction of amorphous semiconductor and amorphous silicon
JPS57181176A (en) 1981-04-30 1982-11-08 Kanegafuchi Chem Ind Co Ltd High voltage amorphous semiconductor/amorphous silicon hetero junction photosensor
JPH0644638B2 (ja) 1982-12-29 1994-06-08 圭弘 濱川 異質単位セル同士のスタック形光起電力素子
US4496788A (en) 1982-12-29 1985-01-29 Osaka Transformer Co., Ltd. Photovoltaic device
US4633034A (en) 1985-02-08 1986-12-30 Energy Conversion Devices, Inc. Photovoltaic device and method
US5750000A (en) 1990-08-03 1998-05-12 Canon Kabushiki Kaisha Semiconductor member, and process for preparing same and semiconductor device formed by use of same
KR950014609B1 (ko) 1990-08-03 1995-12-11 캐논 가부시끼가이샤 반도체부재 및 반도체부재의 제조방법
JPH0795603B2 (ja) 1990-09-20 1995-10-11 三洋電機株式会社 光起電力装置
US5213628A (en) 1990-09-20 1993-05-25 Sanyo Electric Co., Ltd. Photovoltaic device
CA2069038C (en) 1991-05-22 1997-08-12 Kiyofumi Sakaguchi Method for preparing semiconductor member
JP3360919B2 (ja) 1993-06-11 2003-01-07 三菱電機株式会社 薄膜太陽電池の製造方法，及び薄膜太陽電池
JP3106810B2 (ja) 1993-11-04 2000-11-06 富士電機株式会社 非晶質酸化シリコン薄膜の生成方法
JPH07263731A (ja) 1994-03-22 1995-10-13 Canon Inc 多結晶シリコンデバイス
JPH08127860A (ja) 1994-10-31 1996-05-21 Sumitomo Metal Mining Co Ltd 透明導電膜形成用処理液およびその処理液を用いた透明導電膜の作製方法ならびに得られた透明導電膜
JP3469729B2 (ja) 1996-10-31 2003-11-25 三洋電機株式会社 太陽電池素子
JPH10335683A (ja) 1997-05-28 1998-12-18 Ion Kogaku Kenkyusho:Kk タンデム型太陽電池およびその製造方法
US6091019A (en) * 1997-09-26 2000-07-18 Sanyo Electric Co., Ltd. Photovoltaic element and manufacturing method thereof
JP3966638B2 (ja) 1999-03-19 2007-08-29 株式会社東芝 多色色素増感透明半導体電極部材とその製造方法、多色色素増感型太陽電池、及び表示素子
JP2001308354A (ja) 2000-04-24 2001-11-02 Sharp Corp 積層型太陽電池
JP3513592B2 (ja) 2000-09-25 2004-03-31 独立行政法人産業技術総合研究所 太陽電池の製造方法
JP4222500B2 (ja) 2002-04-02 2009-02-12 株式会社カネカ シリコン系薄膜光電変換装置
JP2004079934A (ja) 2002-08-22 2004-03-11 Citizen Watch Co Ltd 太陽電池およびその製造方法
JP2003197943A (ja) 2002-12-05 2003-07-11 Sanyo Electric Co Ltd 太陽電池素子及び太陽電池モジュール
CN101368006B (zh) 2003-03-26 2012-05-30 株式会社半导体能源研究所 有机-无机混合材料、用于合成其的组合物和上述有机-无机混合材料的制备方法
JP2005101384A (ja) 2003-09-26 2005-04-14 Sanyo Electric Co Ltd 光起電力装置及びその製造方法
TWI407829B (zh) 2003-09-26 2013-09-01 Semiconductor Energy Lab 發光元件和其製法
EP1643564B1 (en) 2004-09-29 2019-01-16 Panasonic Intellectual Property Management Co., Ltd. Photovoltaic device
US7375378B2 (en) * 2005-05-12 2008-05-20 General Electric Company Surface passivated photovoltaic devices
JP2007266095A (ja) 2006-03-27 2007-10-11 Mitsubishi Heavy Ind Ltd 光電変換セル、光電変換モジュール、光電変換パネルおよび光電変換システム
JP2008034543A (ja) 2006-07-27 2008-02-14 Kyocera Corp 光電変換素子およびその製造方法
EP2077587A4 (en) * 2006-09-27 2016-10-26 Kyocera Corp SOLAR CELL ARRANGEMENT AND METHOD FOR THE PRODUCTION THEREOF
JP5121203B2 (ja) * 2006-09-29 2013-01-16 三洋電機株式会社 太陽電池モジュール
JP5058084B2 (ja) 2007-07-27 2012-10-24 株式会社半導体エネルギー研究所 光電変換装置の作製方法及びマイクロ波プラズマｃｖｄ装置
JP5538695B2 (ja) 2007-09-12 2014-07-02 三菱マテリアル株式会社 スーパーストレート型薄膜太陽電池用の複合膜
US8921688B2 (en) 2007-09-12 2014-12-30 Mitsubishi Materials Corporation Composite film for superstrate solar cell having conductive film and electroconductive reflective film formed by applying composition containing metal nanoparticles and comprising air pores of preset diameter in contact surface
JP5180640B2 (ja) 2008-03-25 2013-04-10 株式会社カネカ 多接合型シリコン系薄膜光電変換装置
WO2009057698A1 (ja) 2007-11-02 2009-05-07 Kaneka Corporation 薄膜光電変換装置
JP5248995B2 (ja) 2007-11-30 2013-07-31 株式会社半導体エネルギー研究所 光電変換装置の製造方法
JP5286046B2 (ja) 2007-11-30 2013-09-11 株式会社半導体エネルギー研究所 光電変換装置の製造方法
KR101028085B1 (ko) * 2008-02-19 2011-04-08 엘지전자 주식회사 비대칭 웨이퍼의 식각방법, 비대칭 식각의 웨이퍼를포함하는 태양전지, 및 태양전지의 제조방법
US8075792B1 (en) * 2008-03-21 2011-12-13 Alliance For Sustainable Energy, Llc Nanoparticle-based etching of silicon surfaces
JP2009246031A (ja) 2008-03-28 2009-10-22 Mitsubishi Heavy Ind Ltd 光電変換装置
US7888167B2 (en) * 2008-04-25 2011-02-15 Semiconductor Energy Laboratory Co., Ltd. Photoelectric conversion device and method for manufacturing the same
KR20100013649A (ko) * 2008-07-31 2010-02-10 삼성전자주식회사 광전소자 및 이의 제조 방법
TWI366252B (en) * 2008-08-06 2012-06-11 Jer Liang Yeh Substrate with high fracture strength, structure for increasing the fracture strength of a substrate and the method thereof
JP4394153B2 (ja) 2008-10-24 2010-01-06 株式会社カネカ タンデム型薄膜光電変換装置の製造方法
EP2435399B1 (en) 2009-05-29 2018-01-24 Semiconductor Energy Laboratory Co., Ltd. Fluorene derivative, light-emitting element, light-emitting device, electronic device, and lighting device
EP2368276A4 (en) * 2009-06-10 2013-07-03 Thinsilicon Corp PHOTOVOLTAIC MODULE AND PROCESS FOR PRODUCING A PHOTOVOLTAIC MODULE COMPRISING SEVERAL STACKS OF SEMICONDUCTOR LAYERS
US20110088763A1 (en) 2009-10-15 2011-04-21 Applied Materials, Inc. Method and apparatus for improving photovoltaic efficiency
TWI591065B (zh) * 2010-03-01 2017-07-11 半導體能源研究所股份有限公司 雜環化合物、發光元件、發光裝置、電子裝置、及照明裝置
KR20120095786A (ko) 2011-02-21 2012-08-29 가부시키가이샤 한도오따이 에네루기 켄큐쇼 광전 변환 장치
KR20120095790A (ko) 2011-02-21 2012-08-29 가부시키가이샤 한도오따이 에네루기 켄큐쇼 광전 변환 장치
US20120211065A1 (en) 2011-02-21 2012-08-23 Semiconductor Energy Laboratory Co., Ltd. Photoelectric conversion device

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