WO2009057698A1 - 薄膜光電変換装置 - Google Patents

薄膜光電変換装置 Download PDF

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Publication number
WO2009057698A1
WO2009057698A1 PCT/JP2008/069766 JP2008069766W WO2009057698A1 WO 2009057698 A1 WO2009057698 A1 WO 2009057698A1 JP 2008069766 W JP2008069766 W JP 2008069766W WO 2009057698 A1 WO2009057698 A1 WO 2009057698A1
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WO
WIPO (PCT)
Prior art keywords
photoelectric conversion
layer
conversion device
transparent
intermediate layer
Prior art date
Application number
PCT/JP2008/069766
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English (en)
French (fr)
Inventor
Tomomi Meguro
Mitsuru Ichikawa
Fumiyasu Sezaki
Kunta Yoshikawa
Takashi Kuchiyama
Kenji Yamamoto
Original Assignee
Kaneka Corporation
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP2007286145A external-priority patent/JP2009117463A/ja
Priority claimed from JP2007323883A external-priority patent/JP5180574B2/ja
Priority claimed from JP2008078774A external-priority patent/JP5180640B2/ja
Application filed by Kaneka Corporation filed Critical Kaneka Corporation
Priority to US12/740,338 priority Critical patent/US8410355B2/en
Publication of WO2009057698A1 publication Critical patent/WO2009057698A1/ja

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    • H—ELECTRICITY
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    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
    • H01L31/075—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PIN type, e.g. amorphous silicon PIN solar cells
    • H01L31/076—Multiple junction or tandem solar cells
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    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
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    • H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
    • H01L31/02167—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells
    • H01L31/02168—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells the coatings being antireflective or having enhancing optical properties for the solar cells
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    • H01L31/02—Details
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    • H01L31/022466—Electrodes made of transparent conductive layers, e.g. TCO, ITO layers
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    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/054—Optical elements directly associated or integrated with the PV cell, e.g. light-reflecting means or light-concentrating means
    • H01L31/056—Optical elements directly associated or integrated with the PV cell, e.g. light-reflecting means or light-concentrating means the light-reflecting means being of the back surface reflector [BSR] type
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    • H01L31/077—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PIN type, e.g. amorphous silicon PIN solar cells the devices comprising monocrystalline or polycrystalline materials
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    • H01L31/078—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers including different types of potential barriers provided for in two or more of groups H01L31/062 - H01L31/075
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    • H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic Table
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  • Engineering & Computer Science (AREA)
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  • Manufacturing & Machinery (AREA)
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  • Crystallography & Structural Chemistry (AREA)
  • Photovoltaic Devices (AREA)

Abstract

　優れた光学的特性を示す中間層を作製する技術を開発することにより、変換効率の高い光電変換装置を提供するものである。 　本発明の薄膜光電変換装置は、中間層を介して直列接続された薄膜光電変換装置であって、前記中間層は透明酸化物層から始まり、それ以降の層がカーボン層／透明酸化物層の順に積層された層をｎ層（ｎ＝１以上の整数）積層した層とし、各膜厚を最適化することで直列抵抗を維持しつつ、波長選択性と耐応力性を向上させることで課題を解決する。 　また光入射側に位置する透光性絶縁基板上に、光入射側の反対面に透明導電膜、少なくとも１つの光電変換ユニット、酸化亜鉛に代表される導電性を有する透明電極層、ダイヤモンドライクカーボンに代表される導電性を有する硬質炭素層、高反射電極層の順に積層された光電変換装置であることを特徴としている。
PCT/JP2008/069766 2007-11-02 2008-10-30 薄膜光電変換装置 WO2009057698A1 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
US12/740,338 US8410355B2 (en) 2007-11-02 2008-10-30 Thin film photoelectric conversion device having a stacked transparent oxide and carbon intermediate layer

Applications Claiming Priority (6)

Application Number Priority Date Filing Date Title
JP2007-286145 2007-11-02
JP2007286145A JP2009117463A (ja) 2007-11-02 2007-11-02 薄膜光電変換装置
JP2007323883A JP5180574B2 (ja) 2007-12-14 2007-12-14 多接合型シリコン系薄膜光電変換装置
JP2007-323883 2007-12-14
JP2008078774A JP5180640B2 (ja) 2008-03-25 2008-03-25 多接合型シリコン系薄膜光電変換装置
JP2008-078774 2008-03-25

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WO2009057698A1 true WO2009057698A1 (ja) 2009-05-07

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WO (1) WO2009057698A1 (ja)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009193673A (ja) * 2008-02-12 2009-08-27 Kaneka Corp 透明導電膜の製造方法
JP2009193675A (ja) * 2008-02-12 2009-08-27 Kaneka Corp 透明導電膜
WO2012001857A1 (ja) * 2010-06-21 2012-01-05 三菱電機株式会社 光電変換装置
JP2017143103A (ja) * 2016-02-08 2017-08-17 本田技研工業株式会社 発電池
CN110867569A (zh) * 2019-11-18 2020-03-06 青岛瀚博电子科技有限公司 一种硅炭复合材料的制备方法

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KR101032270B1 (ko) * 2010-03-17 2011-05-06 한국철강 주식회사 플렉서블 또는 인플렉서블 기판을 포함하는 광기전력 장치 및 광기전력 장치의 제조 방법
US20120118383A1 (en) * 2010-11-15 2012-05-17 International Business Machines Corporation Autonomous Integrated Circuit
US9437758B2 (en) 2011-02-21 2016-09-06 Semiconductor Energy Laboratory Co., Ltd. Photoelectric conversion device
JP2013058562A (ja) 2011-09-07 2013-03-28 Semiconductor Energy Lab Co Ltd 光電変換装置
JP5927027B2 (ja) * 2011-10-05 2016-05-25 株式会社半導体エネルギー研究所 光電変換装置
TWI477400B (zh) * 2013-09-27 2015-03-21 Innolux Corp 具有類鑽碳膜的結構、指紋辨識器及其製造方法
JP5735093B1 (ja) 2013-12-24 2015-06-17 株式会社マテリアル・コンセプト 太陽電池及びその製造方法
JP6506837B2 (ja) 2015-03-31 2019-04-24 株式会社カネカ 光電変換装置および光電変換モジュール
US10642121B2 (en) * 2017-03-02 2020-05-05 Korea Electronics Technology Institute Reflective display device for visible light and infrared camouflage and active camouflage device using the same

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JP2001308354A (ja) * 2000-04-24 2001-11-02 Sharp Corp 積層型太陽電池
JP2003142709A (ja) * 2001-10-31 2003-05-16 Sharp Corp 積層型太陽電池およびその製造方法
JP2003179241A (ja) * 2001-12-10 2003-06-27 Kyocera Corp 薄膜太陽電池
JP2004260014A (ja) * 2003-02-26 2004-09-16 Kyocera Corp 多層型薄膜光電変換装置
JP2004311968A (ja) * 2003-03-26 2004-11-04 Canon Inc 積層型光起電力素子及びその製造方法
JP2005135987A (ja) * 2003-10-28 2005-05-26 Kaneka Corp 積層型光電変換装置及びその製造方法

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JP2962897B2 (ja) 1991-10-17 1999-10-12 キヤノン株式会社 光起電力素子
US7550665B2 (en) * 2003-07-24 2009-06-23 Kaneka Corporation Stacked photoelectric converter
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Patent Citations (9)

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Publication number Priority date Publication date Assignee Title
JPH02237172A (ja) * 1989-03-10 1990-09-19 Mitsubishi Electric Corp 多層構造太陽電池
JPH04127580A (ja) * 1990-09-19 1992-04-28 Hitachi Ltd 多接合型アモルファスシリコン系太陽電池
JP2001267598A (ja) * 2000-03-17 2001-09-28 Sharp Corp 積層型太陽電池
JP2001308354A (ja) * 2000-04-24 2001-11-02 Sharp Corp 積層型太陽電池
JP2003142709A (ja) * 2001-10-31 2003-05-16 Sharp Corp 積層型太陽電池およびその製造方法
JP2003179241A (ja) * 2001-12-10 2003-06-27 Kyocera Corp 薄膜太陽電池
JP2004260014A (ja) * 2003-02-26 2004-09-16 Kyocera Corp 多層型薄膜光電変換装置
JP2004311968A (ja) * 2003-03-26 2004-11-04 Canon Inc 積層型光起電力素子及びその製造方法
JP2005135987A (ja) * 2003-10-28 2005-05-26 Kaneka Corp 積層型光電変換装置及びその製造方法

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009193673A (ja) * 2008-02-12 2009-08-27 Kaneka Corp 透明導電膜の製造方法
JP2009193675A (ja) * 2008-02-12 2009-08-27 Kaneka Corp 透明導電膜
WO2012001857A1 (ja) * 2010-06-21 2012-01-05 三菱電機株式会社 光電変換装置
JP5554409B2 (ja) * 2010-06-21 2014-07-23 三菱電機株式会社 光電変換装置
US9184320B2 (en) 2010-06-21 2015-11-10 Mitsubishi Electric Corporation Photoelectric conversion device
JP2017143103A (ja) * 2016-02-08 2017-08-17 本田技研工業株式会社 発電池
CN110867569A (zh) * 2019-11-18 2020-03-06 青岛瀚博电子科技有限公司 一种硅炭复合材料的制备方法

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US8410355B2 (en) 2013-04-02

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