JP2012182474A - 半導体装置の製造方法及び記憶媒体 - Google Patents

半導体装置の製造方法及び記憶媒体 Download PDF

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Publication number
JP2012182474A
JP2012182474A JP2012101324A JP2012101324A JP2012182474A JP 2012182474 A JP2012182474 A JP 2012182474A JP 2012101324 A JP2012101324 A JP 2012101324A JP 2012101324 A JP2012101324 A JP 2012101324A JP 2012182474 A JP2012182474 A JP 2012182474A
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film
etching
gas
organic film
plasma
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JP2012101324A
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Japanese (ja)
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JP2012182474A5 (https=
Inventor
Shuhei Ogawa
秀平 小川
Makoto Hirotsu
信 広津
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Tokyo Electron Ltd
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Tokyo Electron Ltd
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JP2012101324A 2012-04-26 2012-04-26 半導体装置の製造方法及び記憶媒体 Pending JP2012182474A (ja)

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JP2012101324A JP2012182474A (ja) 2012-04-26 2012-04-26 半導体装置の製造方法及び記憶媒体

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JP2012101324A JP2012182474A (ja) 2012-04-26 2012-04-26 半導体装置の製造方法及び記憶媒体

Related Parent Applications (1)

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JP2007210229A Division JP2009044090A (ja) 2007-08-10 2007-08-10 半導体装置の製造方法及び記憶媒体

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JP2012182474A true JP2012182474A (ja) 2012-09-20
JP2012182474A5 JP2012182474A5 (https=) 2012-11-01

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Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2016510515A (ja) * 2013-02-08 2016-04-07 日本テキサス・インスツルメンツ株式会社 金属コンタクト開口を形成する方法
CN111725062A (zh) * 2019-03-20 2020-09-29 东京毅力科创株式会社 膜的蚀刻方法和等离子体处理装置
CN112585728A (zh) * 2018-08-22 2021-03-30 东京毅力科创株式会社 处理方法

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004006930A (ja) * 2003-07-07 2004-01-08 Oki Electric Ind Co Ltd 半導体装置の製造方法
JP2007005377A (ja) * 2005-06-21 2007-01-11 Tokyo Electron Ltd プラズマエッチング方法、制御プログラム、コンピュータ記憶媒体及びプラズマエッチング装置
JP2007123399A (ja) * 2005-10-26 2007-05-17 Hitachi High-Technologies Corp ドライエッチング方法

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004006930A (ja) * 2003-07-07 2004-01-08 Oki Electric Ind Co Ltd 半導体装置の製造方法
JP2007005377A (ja) * 2005-06-21 2007-01-11 Tokyo Electron Ltd プラズマエッチング方法、制御プログラム、コンピュータ記憶媒体及びプラズマエッチング装置
JP2007123399A (ja) * 2005-10-26 2007-05-17 Hitachi High-Technologies Corp ドライエッチング方法

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2016510515A (ja) * 2013-02-08 2016-04-07 日本テキサス・インスツルメンツ株式会社 金属コンタクト開口を形成する方法
CN112585728A (zh) * 2018-08-22 2021-03-30 东京毅力科创株式会社 处理方法
CN112585728B (zh) * 2018-08-22 2024-05-17 东京毅力科创株式会社 处理方法
CN111725062A (zh) * 2019-03-20 2020-09-29 东京毅力科创株式会社 膜的蚀刻方法和等离子体处理装置
CN111725062B (zh) * 2019-03-20 2024-04-05 东京毅力科创株式会社 膜的蚀刻方法和等离子体处理装置

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