JP2012182448A - 基板上の堆積層を硬化させるシステム及び方法 - Google Patents
基板上の堆積層を硬化させるシステム及び方法 Download PDFInfo
- Publication number
- JP2012182448A JP2012182448A JP2012028826A JP2012028826A JP2012182448A JP 2012182448 A JP2012182448 A JP 2012182448A JP 2012028826 A JP2012028826 A JP 2012028826A JP 2012028826 A JP2012028826 A JP 2012028826A JP 2012182448 A JP2012182448 A JP 2012182448A
- Authority
- JP
- Japan
- Prior art keywords
- curing
- laser
- light beam
- deposited
- substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000000758 substrate Substances 0.000 title claims abstract description 40
- 238000000034 method Methods 0.000 title claims abstract description 38
- 238000004519 manufacturing process Methods 0.000 claims abstract description 14
- 239000000463 material Substances 0.000 claims description 47
- 238000007639 printing Methods 0.000 claims description 10
- 238000000151 deposition Methods 0.000 claims description 6
- 238000006243 chemical reaction Methods 0.000 claims description 5
- 239000000654 additive Substances 0.000 claims description 4
- 230000001678 irradiating effect Effects 0.000 claims description 3
- 230000000996 additive effect Effects 0.000 claims description 2
- 230000003287 optical effect Effects 0.000 claims description 2
- 239000000126 substance Substances 0.000 claims 2
- 238000001723 curing Methods 0.000 abstract description 65
- 238000005286 illumination Methods 0.000 abstract description 3
- 239000012855 volatile organic compound Substances 0.000 abstract description 2
- 230000003247 decreasing effect Effects 0.000 abstract 1
- 229920000642 polymer Polymers 0.000 description 8
- 238000010586 diagram Methods 0.000 description 5
- 239000003990 capacitor Substances 0.000 description 3
- 239000004020 conductor Substances 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- CURLTUGMZLYLDI-UHFFFAOYSA-N Carbon dioxide Chemical compound O=C=O CURLTUGMZLYLDI-UHFFFAOYSA-N 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 229920001940 conductive polymer Polymers 0.000 description 2
- 239000007789 gas Substances 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 238000004377 microelectronic Methods 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 229910052786 argon Inorganic materials 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 229910002092 carbon dioxide Inorganic materials 0.000 description 1
- 239000001569 carbon dioxide Substances 0.000 description 1
- 239000003054 catalyst Substances 0.000 description 1
- 239000002322 conducting polymer Substances 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- 239000000839 emulsion Substances 0.000 description 1
- CPBQJMYROZQQJC-UHFFFAOYSA-N helium neon Chemical compound [He].[Ne] CPBQJMYROZQQJC-UHFFFAOYSA-N 0.000 description 1
- 238000007641 inkjet printing Methods 0.000 description 1
- 229910010272 inorganic material Inorganic materials 0.000 description 1
- 239000011147 inorganic material Substances 0.000 description 1
- 238000007644 letterpress printing Methods 0.000 description 1
- 229920000620 organic polymer Polymers 0.000 description 1
- 239000002243 precursor Substances 0.000 description 1
- 238000007650 screen-printing Methods 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 238000000935 solvent evaporation Methods 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 239000000725 suspension Substances 0.000 description 1
Images
Classifications
-
- C—CHEMISTRY; METALLURGY
- C21—METALLURGY OF IRON
- C21D—MODIFYING THE PHYSICAL STRUCTURE OF FERROUS METALS; GENERAL DEVICES FOR HEAT TREATMENT OF FERROUS OR NON-FERROUS METALS OR ALLOYS; MAKING METAL MALLEABLE, e.g. BY DECARBURISATION OR TEMPERING
- C21D1/00—General methods or devices for heat treatment, e.g. annealing, hardening, quenching or tempering
- C21D1/06—Surface hardening
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/02—Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
- B23K26/06—Shaping the laser beam, e.g. by masks or multi-focusing
- B23K26/062—Shaping the laser beam, e.g. by masks or multi-focusing by direct control of the laser beam
- B23K26/0622—Shaping the laser beam, e.g. by masks or multi-focusing by direct control of the laser beam by shaping pulses
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05D—PROCESSES FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05D3/00—Pretreatment of surfaces to which liquids or other fluent materials are to be applied; After-treatment of applied coatings, e.g. intermediate treating of an applied coating preparatory to subsequent applications of liquids or other fluent materials
- B05D3/06—Pretreatment of surfaces to which liquids or other fluent materials are to be applied; After-treatment of applied coatings, e.g. intermediate treating of an applied coating preparatory to subsequent applications of liquids or other fluent materials by exposure to radiation
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/02—Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
- B23K26/03—Observing, e.g. monitoring, the workpiece
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/08—Devices involving relative movement between laser beam and workpiece
- B23K26/082—Scanning systems, i.e. devices involving movement of the laser beam relative to the laser head
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/10—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern
- H05K3/12—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern using thick film techniques, e.g. printing techniques to apply the conductive material or similar techniques for applying conductive paste or ink patterns
- H05K3/1283—After-treatment of the printed patterns, e.g. sintering or curing methods
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/22—Secondary treatment of printed circuits
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K2101/00—Articles made by soldering, welding or cutting
- B23K2101/36—Electric or electronic devices
- B23K2101/40—Semiconductor devices
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K1/00—Printed circuits
- H05K1/02—Details
- H05K1/09—Use of materials for the conductive, e.g. metallic pattern
- H05K1/092—Dispersed materials, e.g. conductive pastes or inks
- H05K1/095—Dispersed materials, e.g. conductive pastes or inks for polymer thick films, i.e. having a permanent organic polymeric binder
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2203/00—Indexing scheme relating to apparatus or processes for manufacturing printed circuits covered by H05K3/00
- H05K2203/10—Using electric, magnetic and electromagnetic fields; Using laser light
- H05K2203/107—Using laser light
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/0008—Apparatus or processes for manufacturing printed circuits for aligning or positioning of tools relative to the circuit board
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/40—Thermal treatment, e.g. annealing in the presence of a solvent vapour
- H10K71/421—Thermal treatment, e.g. annealing in the presence of a solvent vapour using coherent electromagnetic radiation, e.g. laser annealing
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Plasma & Fusion (AREA)
- Mechanical Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Materials Engineering (AREA)
- Power Engineering (AREA)
- Thermal Sciences (AREA)
- General Physics & Mathematics (AREA)
- Crystallography & Structural Chemistry (AREA)
- Computer Hardware Design (AREA)
- Metallurgy (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing Of Printed Wiring (AREA)
- Formation Of Insulating Films (AREA)
- Semiconductor Lasers (AREA)
- Drying Of Semiconductors (AREA)
- Laser Beam Processing (AREA)
- Heating, Cooling, Or Curing Plastics Or The Like In General (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
Abstract
【解決手段】少なくとも1つの堆積層を有する基板を支持する平坦な支持面と、少なくとも1つの堆積層を硬化させる少なくとも1つの硬化装置と、全体的な硬化過程を制御する制御システムとを含む硬化システムが提供される。硬化装置は、少なくとも1つのレーザと、レンズモジュールと、選択随意的な変調器とを含む。硬化する間、レーザから放出された光ビームは、1)レーザ光の焦点合わせしたビームを堆積層の所望の照射領域まで導くようにX−Yビームの偏向モジュールの位置を制御すること、2)レーザの位置をX−Yテーブルを介して制御すること、又は3)基板の位置をX−Yテーブルを介して制御することにより堆積層に向けることができる。
【選択図】図1
Description
22 支持面
24 基板
26 堆積層
28 硬化装置
32 制御システム
34、36 床又はプラテン
40 レーザ
42 レンズモジュール
44 変調器
46 レーザ光
50、54 X−Yテーブル
56 偏向モジュール
60 光センサ又は像センサ
110 印刷装置
120 印刷したエレクトロニクス製造システム
Claims (18)
- 硬化システムにおいて、
堆積させた材料を有する基板を支持する平坦面を含む支持体と、
光ビームを材料の堆積層の少なくとも一部分に放出することのできるレーザを備える硬
化装置と、
硬化装置と電気的に連通状態にて接続された制御システムとを備える、硬化システム。 - 請求項1に記載のシステムにおいて、支持体及び(又は)硬化装置はXY面内にて可動
である、システム。 - 請求項1に記載のシステムにおいて、制御システムと電気的連通状態にて接続されて、
光ビームを支持体に対して偏向させることができるX−Yビーム偏向器を更に含む、シス
テム。 - 請求項3に記載のシステムにおいて、支持体と関係付けられて、支持体をXY面内にて
動かすことができる動作装置を更に備え、光ビームと支持体との間の相対的な動きは、X
−Yビーム偏向器と支持体の平坦面の動きとを組み合わせることにより実現される、シス
テム。 - 請求項1に記載のシステムにおいて、硬化装置は、実質的に平行な光ビームを放出させ
且つ、ほぼ同一の光路を有する2つ又はより多くのレーザを含む、システム。 - 請求項1に記載のシステムにおいて、2つ又はより多くの光ビームがレーザから放出さ
れた光ビームから形成され、堆積層上にて2つ又はより多くの照射領域を生じさせる、シ
ステム。 - 請求項1に記載のシステムにおいて、レーザにより放出された光ビームは、光ビームが
堆積した材料内にて化学的反応を誘発させるように選ばれた波長及び強さを有する、シス
テム。 - 請求項1に記載のシステムにおいて、堆積層は2つ以上の化学的添加剤を含み、レーザ
により放出された光ビームは、光ビームが化学的添加剤に対して化学的反応を誘発するよ
う選ばれた波長及び強さを有する、システム。 - 請求項1に記載のシステムにおいて、光ビームは、硬化速度及び(又は)品質を向上さ
せるよう制御可能な長さ及び(又は)強さの2つ又はより多くのパルスにて印加される、
システム。 - 請求項1に記載のシステムにおいて、次のこと、すなわち、1)回路の型式を識別し、
2)層材料を識別し及び(又は)3)硬化性能及び(又は)品質を向上させるよう制御シ
ステムに対しフィードバックを提供することの1つ以上を実現し得るよう、硬化する間、
堆積層を視認する少なくとも1つの光センサを更に備える、システム。 - 請求項1に記載のシステムにおいて、硬化装置は、レーザから放出された光ビームの焦
点を調節するレンズモジュールと、及び又はレーザから放出された光ビームの強さを変調
する変調器とを更に含む、システム。 - 請求項1に記載のシステムにおいて、堆積した材料層は印刷したエレクトロニクスの印
刷層である、システム。 - 基板に堆積した複数の層を備える印刷したエレクトロニクスを製造する過程中少なくと
も1つの堆積層を硬化させる方法において、
レーザから光ビームを放出し、堆積層を放出した光ビームにて照射するステップと、
光ビームを堆積層の選んだ部分まで動かすステップとを含む、方法。 - 請求項13に記載の方法において、光ビームを動かすステップは、次のステップ、すな
わち1)基板をレーザに対して動かすステップと、2)レーザを基板に対して動かすステ
ップと、3)光ビームを偏向させるステップとの1つを含む、方法。 - 請求項13に記載の方法において、レーザから放出された光ビームを焦点合わせし且つ
(又は)焦点外れとして堆積層の選んだ部分を照射するステップを更に備える、方法。 - 請求項13に記載の方法において、光ビームの強さを変調するステップを更に備える、
方法。 - 請求項13に記載の方法において、堆積層の選んだ部分には、異なるレベルの硬化が行
われる、方法。 - 印刷したエレクトロニクスを製造する方法において、
(a)平坦面を有する支持体にて基板を支持するステップと、
(b)印刷装置を介して、1つ又はより多くの材料を選んだパターンにて基板上に堆積
させ、これにより複数の印刷層を形成するステップと、
(c)印刷した層の各々の少なくとも一部分をレーザ硬化させるステップとを備える、
方法。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US11/771,722 US20090004368A1 (en) | 2007-06-29 | 2007-06-29 | Systems and methods for curing a deposited layer on a substrate |
US11/771,722 | 2007-06-29 |
Related Parent Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2008164040A Division JP2009076859A (ja) | 2007-06-29 | 2008-06-24 | 基板上の堆積層を硬化させるシステム及び方法 |
Publications (1)
Publication Number | Publication Date |
---|---|
JP2012182448A true JP2012182448A (ja) | 2012-09-20 |
Family
ID=39916529
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2008164040A Pending JP2009076859A (ja) | 2007-06-29 | 2008-06-24 | 基板上の堆積層を硬化させるシステム及び方法 |
JP2012028826A Pending JP2012182448A (ja) | 2007-06-29 | 2012-02-13 | 基板上の堆積層を硬化させるシステム及び方法 |
Family Applications Before (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2008164040A Pending JP2009076859A (ja) | 2007-06-29 | 2008-06-24 | 基板上の堆積層を硬化させるシステム及び方法 |
Country Status (6)
Country | Link |
---|---|
US (1) | US20090004368A1 (ja) |
EP (1) | EP2009969A3 (ja) |
JP (2) | JP2009076859A (ja) |
KR (1) | KR20090004483A (ja) |
CN (1) | CN101337219A (ja) |
SG (1) | SG148958A1 (ja) |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR101083320B1 (ko) * | 2011-03-11 | 2011-11-14 | 한국기계연구원 | 경화 시스템 및 그 방법 |
EP2726297B1 (en) | 2011-07-01 | 2017-05-03 | Hewlett-Packard Development Company, L.P. | Curing apparatus, image forming apparatus, and articles of manufacture |
KR102315014B1 (ko) * | 2014-04-30 | 2021-10-20 | 카티바, 인크. | 가스 쿠션 장비 및 기판 코팅 기술 |
CN109507768A (zh) * | 2018-11-29 | 2019-03-22 | 交通运输部公路科学研究所 | 微尺度光学结构加工装置 |
Citations (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS63230802A (ja) * | 1987-03-20 | 1988-09-27 | Hitachi Ltd | 電子部品及びその製造方法 |
JPH0766536A (ja) * | 1993-08-30 | 1995-03-10 | Fujitsu Ten Ltd | 配線の印刷方法及び該方法に使用する印刷装置 |
JP2004082161A (ja) * | 2002-08-26 | 2004-03-18 | Nhk Spring Co Ltd | 薄板の成形方法、薄板およびサスペンションの修正装置、並びに修正方法 |
JP2004223789A (ja) * | 2003-01-21 | 2004-08-12 | Seiko Instruments Inc | 観察機能付きマイクロ光造形装置 |
US20060044555A1 (en) * | 2004-08-27 | 2006-03-02 | Wang Sean X | Laser curing apparatus with real-time monitoring and control |
JP2006332568A (ja) * | 2005-05-30 | 2006-12-07 | Daiken Kagaku Kogyo Kk | 導電パターン生成方法 |
JP2007039716A (ja) * | 2005-08-01 | 2007-02-15 | Shin Caterpillar Mitsubishi Ltd | レーザー光によるメッキ層剥離方法、加工メッキ鋼板、作業機械の防錆燃料タンク及びレーザー加工機 |
JP2008199019A (ja) * | 2007-02-09 | 2008-08-28 | Wafermasters Inc | 光学放出分光工程監視及び材料特性測定 |
Family Cites Families (38)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE2735231A1 (de) * | 1977-08-04 | 1979-02-15 | Siemens Ag | Verfahren und vorrichtung zur herstellung von loetverbindungen mittels energiestrahlung |
JPH0795538B2 (ja) * | 1986-05-02 | 1995-10-11 | 旭硝子株式会社 | レ−ザ−アニ−ル装置 |
US5302954A (en) * | 1987-12-04 | 1994-04-12 | Magellan Corporation (Australia) Pty. Ltd. | Identification apparatus and methods |
DE3741916C2 (de) * | 1987-12-10 | 1996-07-18 | Resma Gmbh Fuegetechnik Indust | Verfahren zum Aushärten von Klebstoffen auf Kunststoffbasis |
US5656229A (en) * | 1990-02-20 | 1997-08-12 | Nikon Corporation | Method for removing a thin film layer |
US5204823A (en) * | 1991-03-20 | 1993-04-20 | Calcomp Inc. | Method and apparatus for high-speed layer thickness curing in 3-D model making |
US5300756A (en) * | 1991-10-22 | 1994-04-05 | General Scanning, Inc. | Method for severing integrated-circuit connection paths by a phase-plate-adjusted laser beam |
JPH05133375A (ja) * | 1991-11-14 | 1993-05-28 | Matsushita Electric Ind Co Ltd | 電動圧縮機 |
US5264061A (en) * | 1992-10-22 | 1993-11-23 | Motorola, Inc. | Method of forming a three-dimensional printed circuit assembly |
GB9520888D0 (en) * | 1995-10-12 | 1995-12-13 | Philips Electronics Nv | Electronic devices comprising thin-film circuitry |
DE69729816T2 (de) * | 1996-01-31 | 2005-07-21 | Texas Instruments Deutschland Gmbh | Verbesserung für Vollweggleichrichter |
JP4346684B2 (ja) * | 1996-04-17 | 2009-10-21 | コーニンクレッカ フィリップス エレクトロニクス エヌ ヴィ | 基板上への焼結体の製造方法 |
JP3085451B2 (ja) * | 1996-04-22 | 2000-09-11 | 富士通株式会社 | 製造ラインおよびそれによって製造される多層プリント配線基板 |
JPH1098251A (ja) * | 1996-09-23 | 1998-04-14 | Matsushita Electric Ind Co Ltd | 蒸着された金属配線および誘電配線のuvレーザーアニーリングおよび洗浄 |
EP1012804B1 (en) * | 1997-09-11 | 2005-07-13 | Precision Dynamics Corporation | Radio frequency identification tag on flexible substrate |
US6121130A (en) * | 1998-11-16 | 2000-09-19 | Chartered Semiconductor Manufacturing Ltd. | Laser curing of spin-on dielectric thin films |
US6203952B1 (en) * | 1999-01-14 | 2001-03-20 | 3M Innovative Properties Company | Imaged article on polymeric substrate |
US6524346B1 (en) * | 1999-02-26 | 2003-02-25 | Micron Technology, Inc. | Stereolithographic method for applying materials to electronic component substrates and resulting structures |
US6151446A (en) * | 1999-07-06 | 2000-11-21 | Applied Materials, Inc. | Apparatus and method for thermally processing substrates including a processor using multiple detection signals |
US6134130A (en) * | 1999-07-19 | 2000-10-17 | Motorola, Inc. | Power reception circuits for a device receiving an AC power signal |
KR100850262B1 (ko) * | 2000-01-10 | 2008-08-04 | 일렉트로 싸이언티픽 인더스트리이즈 인코포레이티드 | 초단 펄스 폭을 가진 레이저 펄스의 버스트로 메모리링크를 처리하기 위한 레이저 시스템 및 방법 |
JP2001332658A (ja) * | 2000-03-14 | 2001-11-30 | Hitachi Ltd | 半導体集積回路装置およびその製造方法 |
US6718128B2 (en) * | 2000-06-28 | 2004-04-06 | Fisher & Paykel Healthcare Limited | Radiant warmer with distance determination between heater and patient |
DE10044842A1 (de) * | 2000-09-11 | 2002-04-04 | Siemens Ag | Organischer Gleichrichter, Schaltung, RFID-Tag und Verwendung eines organischen Gleichrichters |
US6414543B1 (en) * | 2000-11-28 | 2002-07-02 | Precision Dynamics Corporation | Rectifying charge storage element |
JP4822588B2 (ja) * | 2001-02-08 | 2011-11-24 | 富士通セミコンダクター株式会社 | 情報処理装置および情報処理デバイス |
US6639177B2 (en) * | 2001-03-29 | 2003-10-28 | Gsi Lumonics Corporation | Method and system for processing one or more microstructures of a multi-material device |
DE10212640B4 (de) * | 2002-03-21 | 2004-02-05 | Siemens Ag | Logische Bauteile aus organischen Feldeffekttransistoren |
US7161590B2 (en) * | 2002-09-04 | 2007-01-09 | John James Daniels | Thin, lightweight, flexible, bright, wireless display |
US7682970B2 (en) * | 2003-07-16 | 2010-03-23 | The Regents Of The University Of California | Maskless nanofabrication of electronic components |
US7026581B2 (en) * | 2003-08-22 | 2006-04-11 | Axcelis Technologies, Inc. | Apparatus for positioning an elevator tube |
US7494923B2 (en) * | 2004-06-14 | 2009-02-24 | Semiconductor Energy Laboratory Co., Ltd. | Manufacturing method of wiring substrate and semiconductor device |
DE102004059467A1 (de) * | 2004-12-10 | 2006-07-20 | Polyic Gmbh & Co. Kg | Gatter aus organischen Feldeffekttransistoren |
JP2006310346A (ja) * | 2005-04-26 | 2006-11-09 | Seiko Epson Corp | 機能性膜パターン形成装置、機能性膜パターンの形成方法及び電子機器 |
EP1716964B1 (en) * | 2005-04-28 | 2009-01-21 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing semiconductor device and laser irradiation apparatus |
GB2432714A (en) * | 2005-10-06 | 2007-05-30 | Seiko Epson Corp | Thin film transistor and method for fabricating an electronic device |
US7622378B2 (en) * | 2005-11-09 | 2009-11-24 | Tokyo Electron Limited | Multi-step system and method for curing a dielectric film |
US8956457B2 (en) * | 2006-09-08 | 2015-02-17 | Tokyo Electron Limited | Thermal processing system for curing dielectric films |
-
2007
- 2007-06-29 US US11/771,722 patent/US20090004368A1/en not_active Abandoned
-
2008
- 2008-05-29 KR KR1020080049966A patent/KR20090004483A/ko not_active Application Discontinuation
- 2008-06-18 SG SG200804612-0A patent/SG148958A1/en unknown
- 2008-06-18 EP EP08252094A patent/EP2009969A3/en not_active Withdrawn
- 2008-06-24 JP JP2008164040A patent/JP2009076859A/ja active Pending
- 2008-06-30 CN CNA2008101295461A patent/CN101337219A/zh active Pending
-
2012
- 2012-02-13 JP JP2012028826A patent/JP2012182448A/ja active Pending
Patent Citations (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS63230802A (ja) * | 1987-03-20 | 1988-09-27 | Hitachi Ltd | 電子部品及びその製造方法 |
JPH0766536A (ja) * | 1993-08-30 | 1995-03-10 | Fujitsu Ten Ltd | 配線の印刷方法及び該方法に使用する印刷装置 |
JP2004082161A (ja) * | 2002-08-26 | 2004-03-18 | Nhk Spring Co Ltd | 薄板の成形方法、薄板およびサスペンションの修正装置、並びに修正方法 |
JP2004223789A (ja) * | 2003-01-21 | 2004-08-12 | Seiko Instruments Inc | 観察機能付きマイクロ光造形装置 |
US20060044555A1 (en) * | 2004-08-27 | 2006-03-02 | Wang Sean X | Laser curing apparatus with real-time monitoring and control |
JP2006332568A (ja) * | 2005-05-30 | 2006-12-07 | Daiken Kagaku Kogyo Kk | 導電パターン生成方法 |
JP2007039716A (ja) * | 2005-08-01 | 2007-02-15 | Shin Caterpillar Mitsubishi Ltd | レーザー光によるメッキ層剥離方法、加工メッキ鋼板、作業機械の防錆燃料タンク及びレーザー加工機 |
JP2008199019A (ja) * | 2007-02-09 | 2008-08-28 | Wafermasters Inc | 光学放出分光工程監視及び材料特性測定 |
Also Published As
Publication number | Publication date |
---|---|
SG148958A1 (en) | 2009-01-29 |
KR20090004483A (ko) | 2009-01-12 |
JP2009076859A (ja) | 2009-04-09 |
EP2009969A3 (en) | 2010-11-17 |
CN101337219A (zh) | 2009-01-07 |
US20090004368A1 (en) | 2009-01-01 |
EP2009969A2 (en) | 2008-12-31 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US8463116B2 (en) | Systems for curing deposited material using feedback control | |
JP5539646B2 (ja) | デバイスのパターニング | |
KR100972920B1 (ko) | 고성능 유기 장치를 조립하기 위한 레이저 절삭 방법 | |
US8916796B2 (en) | Method for depositing and curing nanoparticle-based ink | |
JP2012182448A (ja) | 基板上の堆積層を硬化させるシステム及び方法 | |
JP6046388B2 (ja) | レーザー熱転写装置及びこれを用いた有機発光表示装置の製造方法 | |
CN106664798B (zh) | 在基板上进行激光烧蚀的设备及方法 | |
CN101266409A (zh) | 激光加工装置 | |
TW200715065A (en) | Exposure apparatus and exposure method, and method of manufacturing electrical wiring board | |
KR100461024B1 (ko) | 칩 스케일 마커 및 마킹 방법 | |
US20140178566A1 (en) | Pattern forming apparatus and method, and method of manufacturing substrate formed with pattern | |
JP2015064461A (ja) | 位置計測装置、アライメント装置、パターン描画装置および位置計測方法 | |
KR20090042711A (ko) | 직접 상 노광장치 | |
WO2013133196A1 (ja) | パターン形成方法及びパターン形成基板の製造方法 | |
JPH097968A (ja) | レーザ光照射方法及びレーザ光照射装置 | |
CN112599462A (zh) | 移转设备及移转方法 | |
JP2015222375A (ja) | 搬送装置およびパターン形成方法 | |
TW201038160A (en) | Method and apparatus for accurately applying structures to a substrate | |
US20190146349A1 (en) | Method and apparatus for lithography in semiconductor fabrication | |
JP2018116293A (ja) | パターン形成方法 | |
US20030217996A1 (en) | Method for simultaneous laser beam soldering | |
JP2020101821A (ja) | パターン形成装置 | |
JP5514545B2 (ja) | 歪み許容プロセシング | |
JP2019215551A (ja) | デバイス製造方法 | |
KR100623733B1 (ko) | 레이저 열전사 장치, 그를 이용한 레이저 열전사 방법 및유기전계발광표시장치의 제조방법 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20130712 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20130718 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20131017 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20140522 |
|
A02 | Decision of refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A02 Effective date: 20141031 |