JP2012175067A - 撮像素子、製造方法、および電子機器 - Google Patents

撮像素子、製造方法、および電子機器 Download PDF

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Publication number
JP2012175067A
JP2012175067A JP2011038668A JP2011038668A JP2012175067A JP 2012175067 A JP2012175067 A JP 2012175067A JP 2011038668 A JP2011038668 A JP 2011038668A JP 2011038668 A JP2011038668 A JP 2011038668A JP 2012175067 A JP2012175067 A JP 2012175067A
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Prior art keywords
solid
imaging device
state imaging
gate electrode
substrate
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JP2011038668A
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Japanese (ja)
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JP2012175067A5 (enExample
Inventor
Hideaki Togashi
秀晃 富樫
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Sony Corp
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Sony Corp
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Priority to JP2011038668A priority Critical patent/JP2012175067A/ja
Priority to US13/358,258 priority patent/US8916916B2/en
Priority to CN2012100356318A priority patent/CN102651375A/zh
Publication of JP2012175067A publication Critical patent/JP2012175067A/ja
Publication of JP2012175067A5 publication Critical patent/JP2012175067A5/ja
Ceased legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/803—Pixels having integrated switching, control, storage or amplification elements
    • H10F39/8037—Pixels having integrated switching, control, storage or amplification elements the integrated elements comprising a transistor
    • H10F39/80373—Pixels having integrated switching, control, storage or amplification elements the integrated elements comprising a transistor characterised by the gate of the transistor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76898—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics formed through a semiconductor substrate

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  • Solid State Image Pick-Up Elements (AREA)
JP2011038668A 2011-02-24 2011-02-24 撮像素子、製造方法、および電子機器 Ceased JP2012175067A (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2011038668A JP2012175067A (ja) 2011-02-24 2011-02-24 撮像素子、製造方法、および電子機器
US13/358,258 US8916916B2 (en) 2011-02-24 2012-01-25 Imaging device, method of manufacturing the same, and electronic apparatus
CN2012100356318A CN102651375A (zh) 2011-02-24 2012-02-16 固体摄像元件、固体摄像元件的制造方法和电子装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2011038668A JP2012175067A (ja) 2011-02-24 2011-02-24 撮像素子、製造方法、および電子機器

Publications (2)

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JP2012175067A true JP2012175067A (ja) 2012-09-10
JP2012175067A5 JP2012175067A5 (enExample) 2014-04-03

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JP2011038668A Ceased JP2012175067A (ja) 2011-02-24 2011-02-24 撮像素子、製造方法、および電子機器

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US (1) US8916916B2 (enExample)
JP (1) JP2012175067A (enExample)
CN (1) CN102651375A (enExample)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2017055050A (ja) * 2015-09-11 2017-03-16 株式会社東芝 固体撮像装置および固体撮像装置の製造方法
JP2017509142A (ja) * 2014-01-10 2017-03-30 ケーエルエー−テンカー コーポレイション 裏面照射型センサのための反射防止層
JP2019117931A (ja) * 2019-02-20 2019-07-18 株式会社東芝 固体撮像装置および固体撮像装置の製造方法
WO2020045142A1 (ja) * 2018-08-30 2020-03-05 ソニーセミコンダクタソリューションズ株式会社 撮像装置および電子機器
JP2021141262A (ja) * 2020-03-06 2021-09-16 Ｇｐｉｘｅｌ Ｊａｐａｎ株式会社 固体撮像装置用画素
WO2023199642A1 (ja) * 2022-04-15 2023-10-19 ソニーセミコンダクタソリューションズ株式会社 光検出装置及び電子機器

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FR2984607A1 (fr) * 2011-12-16 2013-06-21 St Microelectronics Crolles 2 Capteur d'image a photodiode durcie
US9496425B2 (en) 2012-04-10 2016-11-15 Kla-Tencor Corporation Back-illuminated sensor with boron layer
TWI589326B (zh) * 2013-08-29 2017-07-01 財團法人工業技術研究院 發光模組及應用其之光照系統
US11114489B2 (en) 2018-06-18 2021-09-07 Kla-Tencor Corporation Back-illuminated sensor and a method of manufacturing a sensor
US11114491B2 (en) 2018-12-12 2021-09-07 Kla Corporation Back-illuminated sensor and a method of manufacturing a sensor
FR3091787A1 (fr) 2019-01-14 2020-07-17 Commissariat A L'energie Atomique Et Aux Energies Alternatives Capteur d'images à éclairement par la face arrière
US11848350B2 (en) 2020-04-08 2023-12-19 Kla Corporation Back-illuminated sensor and a method of manufacturing a sensor using a silicon on insulator wafer
US11527563B2 (en) * 2020-04-20 2022-12-13 Taiwan Semiconductor Manufacturing Company Limited Photodetector using a buried gate electrode for a transfer transistor and methods of manufacturing the same
KR102550988B1 (ko) * 2021-03-29 2023-07-04 누보톤 테크놀로지 재팬 가부시키가이샤 반도체 장치, 전지 보호 회로, 및, 파워 매니지먼트 회로

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2006019156A1 (ja) * 2004-08-20 2006-02-23 Zycube Co., Ltd. 三次元積層構造を持つ半導体装置の製造方法
JP2008258316A (ja) * 2007-04-03 2008-10-23 Sharp Corp 固体撮像装置およびその製造方法、電子情報機器
JP2010114273A (ja) * 2008-11-06 2010-05-20 Sony Corp 固体撮像装置、及び電子機器

Family Cites Families (10)

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KR20050043754A (ko) * 2001-11-05 2005-05-11 미츠마사 코야나기 고체 영상센서 및 그 제조방법
KR100467027B1 (ko) * 2003-01-07 2005-01-24 삼성전자주식회사 수직 트랜지스터로 구성된 에스램 소자 및 그 제조방법
JP4839008B2 (ja) 2005-03-28 2011-12-14 富士フイルム株式会社 単板式カラー固体撮像素子
KR100790257B1 (ko) * 2006-12-27 2008-01-02 동부일렉트로닉스 주식회사 반도체 소자 및 그 제조방법
JP2009272480A (ja) * 2008-05-08 2009-11-19 Nec Electronics Corp 半導体装置の製造方法
EP2133918B1 (en) * 2008-06-09 2015-01-28 Sony Corporation Solid-state imaging device, drive method thereof and electronic apparatus
JP5365144B2 (ja) 2008-11-06 2013-12-11 ソニー株式会社 固体撮像装置とその製造方法、及び電子機器
JP5369505B2 (ja) * 2008-06-09 2013-12-18 ソニー株式会社 固体撮像装置、及び電子機器
JP4862878B2 (ja) * 2008-10-30 2012-01-25 ソニー株式会社 固体撮像装置、その製造方法および撮像装置
TWI445166B (zh) * 2008-11-07 2014-07-11 Sony Corp 固態成像裝置，製造固態成像裝置之方法、及電子設備

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2006019156A1 (ja) * 2004-08-20 2006-02-23 Zycube Co., Ltd. 三次元積層構造を持つ半導体装置の製造方法
JP2008258316A (ja) * 2007-04-03 2008-10-23 Sharp Corp 固体撮像装置およびその製造方法、電子情報機器
JP2010114273A (ja) * 2008-11-06 2010-05-20 Sony Corp 固体撮像装置、及び電子機器

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2017509142A (ja) * 2014-01-10 2017-03-30 ケーエルエー−テンカー コーポレイション 裏面照射型センサのための反射防止層
JP2017055050A (ja) * 2015-09-11 2017-03-16 株式会社東芝 固体撮像装置および固体撮像装置の製造方法
WO2020045142A1 (ja) * 2018-08-30 2020-03-05 ソニーセミコンダクタソリューションズ株式会社 撮像装置および電子機器
US12041368B2 (en) 2018-08-30 2024-07-16 Sony Semiconductor Solutions Corporation Imaging device
JP2019117931A (ja) * 2019-02-20 2019-07-18 株式会社東芝 固体撮像装置および固体撮像装置の製造方法
JP2021141262A (ja) * 2020-03-06 2021-09-16 Ｇｐｉｘｅｌ Ｊａｐａｎ株式会社 固体撮像装置用画素
JP7557172B2 (ja) 2020-03-06 2024-09-27 Ｇｐｉｘｅｌ Ｊａｐａｎ株式会社 固体撮像装置用画素
WO2023199642A1 (ja) * 2022-04-15 2023-10-19 ソニーセミコンダクタソリューションズ株式会社 光検出装置及び電子機器

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Publication number Publication date
US8916916B2 (en) 2014-12-23
CN102651375A (zh) 2012-08-29
US20120217558A1 (en) 2012-08-30

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