CN102651375A - 固体摄像元件、固体摄像元件的制造方法和电子装置 - Google Patents

固体摄像元件、固体摄像元件的制造方法和电子装置 Download PDF

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Publication number
CN102651375A
CN102651375A CN2012100356318A CN201210035631A CN102651375A CN 102651375 A CN102651375 A CN 102651375A CN 2012100356318 A CN2012100356318 A CN 2012100356318A CN 201210035631 A CN201210035631 A CN 201210035631A CN 102651375 A CN102651375 A CN 102651375A
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China
Prior art keywords
solid
gate electrode
substrate
state imaging
insulating film
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CN2012100356318A
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English (en)
Chinese (zh)
Inventor
富樫秀晃
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Sony Corp
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Sony Corp
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Publication of CN102651375A publication Critical patent/CN102651375A/zh
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/803—Pixels having integrated switching, control, storage or amplification elements
    • H10F39/8037—Pixels having integrated switching, control, storage or amplification elements the integrated elements comprising a transistor
    • H10F39/80373—Pixels having integrated switching, control, storage or amplification elements the integrated elements comprising a transistor characterised by the gate of the transistor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76898—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics formed through a semiconductor substrate

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  • Solid State Image Pick-Up Elements (AREA)
CN2012100356318A 2011-02-24 2012-02-16 固体摄像元件、固体摄像元件的制造方法和电子装置 Pending CN102651375A (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2011-038668 2011-02-24
JP2011038668A JP2012175067A (ja) 2011-02-24 2011-02-24 撮像素子、製造方法、および電子機器

Publications (1)

Publication Number Publication Date
CN102651375A true CN102651375A (zh) 2012-08-29

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US (1) US8916916B2 (enExample)
JP (1) JP2012175067A (enExample)
CN (1) CN102651375A (enExample)

Cited By (2)

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CN104425394A (zh) * 2013-08-29 2015-03-18 财团法人工业技术研究院 基板、其制造方法及其应用
CN111435670A (zh) * 2019-01-14 2020-07-21 意法半导体(克洛尔2)公司 背照式图像传感器

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FR2984607A1 (fr) * 2011-12-16 2013-06-21 St Microelectronics Crolles 2 Capteur d'image a photodiode durcie
US9496425B2 (en) 2012-04-10 2016-11-15 Kla-Tencor Corporation Back-illuminated sensor with boron layer
US9748294B2 (en) * 2014-01-10 2017-08-29 Hamamatsu Photonics K.K. Anti-reflection layer for back-illuminated sensor
JP2017055050A (ja) * 2015-09-11 2017-03-16 株式会社東芝 固体撮像装置および固体撮像装置の製造方法
US11114489B2 (en) 2018-06-18 2021-09-07 Kla-Tencor Corporation Back-illuminated sensor and a method of manufacturing a sensor
JP2020035916A (ja) * 2018-08-30 2020-03-05 ソニーセミコンダクタソリューションズ株式会社 撮像装置および電子機器
US11114491B2 (en) 2018-12-12 2021-09-07 Kla Corporation Back-illuminated sensor and a method of manufacturing a sensor
JP2019117931A (ja) * 2019-02-20 2019-07-18 株式会社東芝 固体撮像装置および固体撮像装置の製造方法
JP7557172B2 (ja) * 2020-03-06 2024-09-27 Ｇｐｉｘｅｌ Ｊａｐａｎ株式会社 固体撮像装置用画素
US11848350B2 (en) 2020-04-08 2023-12-19 Kla Corporation Back-illuminated sensor and a method of manufacturing a sensor using a silicon on insulator wafer
US11527563B2 (en) * 2020-04-20 2022-12-13 Taiwan Semiconductor Manufacturing Company Limited Photodetector using a buried gate electrode for a transfer transistor and methods of manufacturing the same
KR102550988B1 (ko) * 2021-03-29 2023-07-04 누보톤 테크놀로지 재팬 가부시키가이샤 반도체 장치, 전지 보호 회로, 및, 파워 매니지먼트 회로
JP2023157511A (ja) * 2022-04-15 2023-10-26 ソニーセミコンダクタソリューションズ株式会社 光検出装置及び電子機器

Citations (5)

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CN100487898C (zh) * 2001-11-05 2009-05-13 佐伊科比株式会社 固体图像传感器及其制造方法
US20090280610A1 (en) * 2008-05-08 2009-11-12 Nec Electronics Corporation Method of manufacturing semiconductor device
CN101609837A (zh) * 2008-06-09 2009-12-23 索尼株式会社 固体摄像器件、它的驱动方法以及使用它的电子装置
CN101728406A (zh) * 2008-10-30 2010-06-09 索尼株式会社 固态成像装置及其制造方法和成像设备
CN101740592A (zh) * 2008-11-07 2010-06-16 索尼株式会社 固态成像装置、固态成像装置的制造方法和电子设备

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KR100467027B1 (ko) * 2003-01-07 2005-01-24 삼성전자주식회사 수직 트랜지스터로 구성된 에스램 소자 및 그 제조방법
CN102290425B (zh) * 2004-08-20 2014-04-02 Kamiyacho知识产权控股公司 具有三维层叠结构的半导体器件的制造方法
JP4839008B2 (ja) 2005-03-28 2011-12-14 富士フイルム株式会社 単板式カラー固体撮像素子
KR100790257B1 (ko) * 2006-12-27 2008-01-02 동부일렉트로닉스 주식회사 반도체 소자 및 그 제조방법
JP4384198B2 (ja) * 2007-04-03 2009-12-16 シャープ株式会社 固体撮像装置およびその製造方法、電子情報機器
EP2133918B1 (en) * 2008-06-09 2015-01-28 Sony Corporation Solid-state imaging device, drive method thereof and electronic apparatus
JP5365144B2 (ja) 2008-11-06 2013-12-11 ソニー株式会社 固体撮像装置とその製造方法、及び電子機器
JP5401928B2 (ja) * 2008-11-06 2014-01-29 ソニー株式会社 固体撮像装置、及び電子機器

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN100487898C (zh) * 2001-11-05 2009-05-13 佐伊科比株式会社 固体图像传感器及其制造方法
US20090280610A1 (en) * 2008-05-08 2009-11-12 Nec Electronics Corporation Method of manufacturing semiconductor device
CN101609837A (zh) * 2008-06-09 2009-12-23 索尼株式会社 固体摄像器件、它的驱动方法以及使用它的电子装置
CN101728406A (zh) * 2008-10-30 2010-06-09 索尼株式会社 固态成像装置及其制造方法和成像设备
CN101740592A (zh) * 2008-11-07 2010-06-16 索尼株式会社 固态成像装置、固态成像装置的制造方法和电子设备

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104425394A (zh) * 2013-08-29 2015-03-18 财团法人工业技术研究院 基板、其制造方法及其应用
CN104425394B (zh) * 2013-08-29 2018-01-12 财团法人工业技术研究院 基板、其制造方法及其应用
CN111435670A (zh) * 2019-01-14 2020-07-21 意法半导体(克洛尔2)公司 背照式图像传感器
US12199131B2 (en) 2019-01-14 2025-01-14 Stmicroelectronics (Crolles 2) Sas Back-side illuminated image sensor

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US8916916B2 (en) 2014-12-23
JP2012175067A (ja) 2012-09-10
US20120217558A1 (en) 2012-08-30

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Application publication date: 20120829