JP2012160713A5 - - Google Patents
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- Publication number
- JP2012160713A5 JP2012160713A5 JP2012001723A JP2012001723A JP2012160713A5 JP 2012160713 A5 JP2012160713 A5 JP 2012160713A5 JP 2012001723 A JP2012001723 A JP 2012001723A JP 2012001723 A JP2012001723 A JP 2012001723A JP 2012160713 A5 JP2012160713 A5 JP 2012160713A5
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- semiconductor substrate
- base
- semiconductor
- manufacturing
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000000758 substrate Substances 0.000 claims 29
- 239000004065 semiconductor Substances 0.000 claims 18
- 229910052799 carbon Inorganic materials 0.000 claims 8
- -1 carbon ions Chemical class 0.000 claims 8
- 238000004519 manufacturing process Methods 0.000 claims 5
- 238000000034 method Methods 0.000 claims 5
- 229910052739 hydrogen Inorganic materials 0.000 claims 4
- 239000001257 hydrogen Substances 0.000 claims 4
- 230000001678 irradiating effect Effects 0.000 claims 3
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims 2
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims 2
- 238000010438 heat treatment Methods 0.000 claims 2
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2012001723A JP5977947B2 (ja) | 2011-01-14 | 2012-01-09 | Ｓｏｉ基板の作製方法 |
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2011005490 | 2011-01-14 | ||
| JP2011005490 | 2011-01-14 | ||
| JP2012001723A JP5977947B2 (ja) | 2011-01-14 | 2012-01-09 | Ｓｏｉ基板の作製方法 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2012160713A JP2012160713A (ja) | 2012-08-23 |
| JP2012160713A5 true JP2012160713A5 (enExample) | 2015-02-26 |
| JP5977947B2 JP5977947B2 (ja) | 2016-08-24 |
Family
ID=46491092
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2012001723A Expired - Fee Related JP5977947B2 (ja) | 2011-01-14 | 2012-01-09 | Ｓｏｉ基板の作製方法 |
Country Status (2)
| Country | Link |
|---|---|
| US (1) | US8877607B2 (enExample) |
| JP (1) | JP5977947B2 (enExample) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP6295815B2 (ja) * | 2014-05-13 | 2018-03-20 | 株式会社Sumco | 貼り合わせウェーハの製造方法 |
| JP6539959B2 (ja) * | 2014-08-28 | 2019-07-10 | 株式会社Sumco | エピタキシャルシリコンウェーハおよびその製造方法、ならびに、固体撮像素子の製造方法 |
| CN110349843B (zh) * | 2019-07-26 | 2021-12-21 | 京东方科技集团股份有限公司 | 薄膜晶体管及其制备方法、生物识别器件、显示装置 |
| JP7551371B2 (ja) * | 2020-07-15 | 2024-09-17 | 太陽誘電株式会社 | ウエハの製造方法、弾性波デバイスおよびその製造方法 |
Family Cites Families (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6150239A (en) * | 1997-05-31 | 2000-11-21 | Max Planck Society | Method for the transfer of thin layers monocrystalline material onto a desirable substrate |
| JP2000124092A (ja) | 1998-10-16 | 2000-04-28 | Shin Etsu Handotai Co Ltd | 水素イオン注入剥離法によってｓｏｉウエーハを製造する方法およびこの方法で製造されたｓｏｉウエーハ |
| US20020089032A1 (en) | 1999-08-23 | 2002-07-11 | Feng-Yi Huang | Processing method for forming dislocation-free silicon-on-insulator substrate prepared by implantation of oxygen |
| JP4507395B2 (ja) * | 2000-11-30 | 2010-07-21 | セイコーエプソン株式会社 | 電気光学装置用素子基板の製造方法 |
| US6583440B2 (en) | 2000-11-30 | 2003-06-24 | Seiko Epson Corporation | Soi substrate, element substrate, semiconductor device, electro-optical apparatus, electronic equipment, method of manufacturing the soi substrate, method of manufacturing the element substrate, and method of manufacturing the electro-optical apparatus |
| JP2004039735A (ja) * | 2002-07-01 | 2004-02-05 | Fujitsu Ltd | 半導体基板及びその製造方法 |
| KR100766393B1 (ko) | 2003-02-14 | 2007-10-11 | 주식회사 사무코 | 규소 웨이퍼의 제조방법 |
| JP2011151318A (ja) * | 2010-01-25 | 2011-08-04 | Renesas Electronics Corp | 半導体装置およびその製造方法 |
| JP5917036B2 (ja) | 2010-08-05 | 2016-05-11 | 株式会社半導体エネルギー研究所 | Ｓｏｉ基板の作製方法 |
| JP2012156495A (ja) | 2011-01-07 | 2012-08-16 | Semiconductor Energy Lab Co Ltd | Ｓｏｉ基板の作製方法 |
-
2012
- 2012-01-09 JP JP2012001723A patent/JP5977947B2/ja not_active Expired - Fee Related
- 2012-01-10 US US13/346,930 patent/US8877607B2/en not_active Expired - Fee Related
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