WO2013015559A3 - 그래핀의 원자층 식각 방법 - Google Patents

그래핀의 원자층 식각 방법 Download PDF

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Publication number
WO2013015559A3
WO2013015559A3 PCT/KR2012/005747 KR2012005747W WO2013015559A3 WO 2013015559 A3 WO2013015559 A3 WO 2013015559A3 KR 2012005747 W KR2012005747 W KR 2012005747W WO 2013015559 A3 WO2013015559 A3 WO 2013015559A3
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WO
WIPO (PCT)
Prior art keywords
graphine
atomic layer
etching
etching atomic
reactive radical
Prior art date
Application number
PCT/KR2012/005747
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English (en)
French (fr)
Other versions
WO2013015559A2 (ko
Inventor
염근영
임웅선
민경석
김이연
Original Assignee
성균관대학교산학협력단
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Publication date
Application filed by 성균관대학교산학협력단 filed Critical 성균관대학교산학협력단
Publication of WO2013015559A2 publication Critical patent/WO2013015559A2/ko
Publication of WO2013015559A3 publication Critical patent/WO2013015559A3/ko
Priority to US14/161,050 priority Critical patent/US9245752B2/en

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/3065—Plasma etching; Reactive-ion etching
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B32/00—Carbon; Compounds thereof
    • C01B32/15—Nano-sized carbon materials
    • C01B32/182—Graphene
    • C01B32/194—After-treatment
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
    • B01J19/00—Chemical, physical or physico-chemical processes in general; Their relevant apparatus
    • B01J19/08—Processes employing the direct application of electric or wave energy, or particle radiation; Apparatus therefor
    • B01J19/081—Processes employing the direct application of electric or wave energy, or particle radiation; Apparatus therefor employing particle radiation or gamma-radiation
    • B01J19/084—Neutron beams only
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
    • B01J19/00—Chemical, physical or physico-chemical processes in general; Their relevant apparatus
    • B01J19/08—Processes employing the direct application of electric or wave energy, or particle radiation; Apparatus therefor
    • B01J19/12—Processes employing the direct application of electric or wave energy, or particle radiation; Apparatus therefor employing electromagnetic waves
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B32/00—Carbon; Compounds thereof
    • C01B32/05—Preparation or purification of carbon not covered by groups C01B32/15, C01B32/20, C01B32/25, C01B32/30
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B32/00—Carbon; Compounds thereof
    • C01B32/15—Nano-sized carbon materials
    • C01B32/182—Graphene
    • C01B32/184—Preparation
    • C01B32/19—Preparation by exfoliation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/0405—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising semiconducting carbon, e.g. diamond, diamond-like carbon
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/0405—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising semiconducting carbon, e.g. diamond, diamond-like carbon
    • H01L21/042—Changing their shape, e.g. forming recesses
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/16—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic Table
    • H01L29/1606—Graphene
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66015—Multistep manufacturing processes of devices having a semiconductor body comprising semiconducting carbon, e.g. diamond, diamond-like carbon, graphene
    • H01L29/66037—Multistep manufacturing processes of devices having a semiconductor body comprising semiconducting carbon, e.g. diamond, diamond-like carbon, graphene the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B2204/00—Structure or properties of graphene
    • C01B2204/04—Specific amount of layers or specific thickness

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  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Organic Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Ceramic Engineering (AREA)
  • Inorganic Chemistry (AREA)
  • General Health & Medical Sciences (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Nanotechnology (AREA)
  • Plasma & Fusion (AREA)
  • Electromagnetism (AREA)
  • Carbon And Carbon Compounds (AREA)
  • ing And Chemical Polishing (AREA)
  • Drying Of Semiconductors (AREA)

Abstract

그래핀 표면에 반응성 라디칼(reactive radical)을 흡착시키는 것; 및 상기 반응성 라디칼이 흡착된 그래핀에 에너지원을 조사하는 것을 포함하는, 그래핀의 원자층 식각 방법에 관한 것이다.
PCT/KR2012/005747 2011-07-22 2012-07-19 그래핀의 원자층 식각 방법 WO2013015559A2 (ko)

Priority Applications (1)

Application Number Priority Date Filing Date Title
US14/161,050 US9245752B2 (en) 2011-07-22 2014-01-22 Method for etching atomic layer of graphene

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
KR10-2011-0072843 2011-07-22
KR20110072843 2011-07-22
KR1020120074309A KR101380835B1 (ko) 2011-07-22 2012-07-09 그래핀의 원자층 식각 방법
KR10-2012-0074309 2012-07-09

Related Child Applications (1)

Application Number Title Priority Date Filing Date
US14/161,050 Continuation US9245752B2 (en) 2011-07-22 2014-01-22 Method for etching atomic layer of graphene

Publications (2)

Publication Number Publication Date
WO2013015559A2 WO2013015559A2 (ko) 2013-01-31
WO2013015559A3 true WO2013015559A3 (ko) 2013-03-21

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Country Link
US (1) US9245752B2 (ko)
KR (1) KR101380835B1 (ko)
WO (1) WO2013015559A2 (ko)

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CN105776198A (zh) * 2016-04-28 2016-07-20 江南大学 一种精确减薄并获得高质量少层或单层石墨烯的方法

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US9202945B2 (en) * 2011-12-23 2015-12-01 Nokia Technologies Oy Graphene-based MIM diode and associated methods
JP6268419B2 (ja) * 2013-04-03 2018-01-31 富士通株式会社 電子装置及びその製造方法
KR101439030B1 (ko) * 2013-05-31 2014-09-05 고려대학교 산학협력단 패턴 구조물의 형성 방법
US9362163B2 (en) * 2013-07-30 2016-06-07 Lam Research Corporation Methods and apparatuses for atomic layer cleaning of contacts and vias
WO2015134904A1 (en) * 2014-03-06 2015-09-11 The Regents Of The University Of Michigan Field effect transistor memory device
US9773683B2 (en) 2014-06-09 2017-09-26 American Air Liquide, Inc. Atomic layer or cyclic plasma etching chemistries and processes
KR102510737B1 (ko) * 2015-03-30 2023-03-15 도쿄엘렉트론가부시키가이샤 원자층 에칭 방법
KR102437295B1 (ko) 2015-11-09 2022-08-30 삼성전자주식회사 반도체 소자의 제조 방법
EP3206232A1 (en) * 2016-02-12 2017-08-16 Centre National de la Recherche Scientifique - CNRS - Method for obtaining a graphene-based fet, in particular a memory fet, equipped with an embedded dielectric element made by fluorination
US10269566B2 (en) * 2016-04-29 2019-04-23 Lam Research Corporation Etching substrates using ale and selective deposition
CN106128947B (zh) * 2016-07-04 2019-01-29 山东赛帝格新材料有限责任公司 一种多层石墨烯的刻蚀方法
CN107706240A (zh) * 2016-08-09 2018-02-16 中芯国际集成电路制造(上海)有限公司 一种石墨烯FinFET器件及其制造方法、电子装置
US9934798B1 (en) 2016-09-28 2018-04-03 Seagate Technology Llc Lateral spin valve reader with vertically-integrated two-dimensional semiconducting channel
US10566212B2 (en) 2016-12-19 2020-02-18 Lam Research Corporation Designer atomic layer etching
JP7012347B2 (ja) * 2017-11-01 2022-02-14 国立研究開発法人産業技術総合研究所 二次元層状材料の積層体
CN109224881B (zh) * 2018-11-22 2021-04-23 中国科学院重庆绿色智能技术研究院 亚纳米多孔石墨烯渗透膜及其制备方法和应用
JP7202230B2 (ja) 2019-03-20 2023-01-11 株式会社Ｓｃｒｅｅｎホールディングス 基板処理方法および基板処理装置
US11527659B2 (en) * 2020-10-14 2022-12-13 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor device and manufacturing method thereof
CN113380697A (zh) * 2021-05-07 2021-09-10 北京大学 基于溴插层多层石墨烯或石墨薄膜的碳基器件和电路结构的制备方法
US11664195B1 (en) 2021-11-11 2023-05-30 Velvetch Llc DC plasma control for electron enhanced material processing
US11688588B1 (en) 2022-02-09 2023-06-27 Velvetch Llc Electron bias control signals for electron enhanced material processing
US11869747B1 (en) 2023-01-04 2024-01-09 Velvetch Llc Atomic layer etching by electron wavefront

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Also Published As

Publication number Publication date
US9245752B2 (en) 2016-01-26
WO2013015559A2 (ko) 2013-01-31
KR20130011922A (ko) 2013-01-30
KR101380835B1 (ko) 2014-04-04
US20140206192A1 (en) 2014-07-24

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