JP2012146981A - ゲルマニウム層の直接成長方法 - Google Patents
ゲルマニウム層の直接成長方法 Download PDFInfo
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- 238000000034 method Methods 0.000 title claims abstract description 34
- 230000008021 deposition Effects 0.000 title claims abstract description 31
- 229910052732 germanium Inorganic materials 0.000 title claims abstract description 19
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical group [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 title claims abstract description 19
- 239000002243 precursor Substances 0.000 claims abstract description 39
- 239000000758 substrate Substances 0.000 claims abstract description 38
- 238000000151 deposition Methods 0.000 claims abstract description 37
- 239000007789 gas Substances 0.000 claims abstract description 34
- 238000005229 chemical vapour deposition Methods 0.000 claims abstract description 21
- 239000012159 carrier gas Substances 0.000 claims abstract description 18
- 239000000203 mixture Substances 0.000 claims abstract description 17
- 229910000078 germane Inorganic materials 0.000 claims abstract description 5
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 claims description 19
- 229910004298 SiO 2 Inorganic materials 0.000 claims description 17
- 229910052751 metal Inorganic materials 0.000 claims description 16
- 239000002184 metal Substances 0.000 claims description 16
- 150000004767 nitrides Chemical class 0.000 claims description 8
- 239000004065 semiconductor Substances 0.000 claims description 8
- 239000000463 material Substances 0.000 claims description 7
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 3
- 239000003989 dielectric material Substances 0.000 claims description 3
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims 3
- 230000015572 biosynthetic process Effects 0.000 description 6
- 239000002019 doping agent Substances 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 229910000577 Silicon-germanium Inorganic materials 0.000 description 2
- 238000011109 contamination Methods 0.000 description 2
- VXGHASBVNMHGDI-UHFFFAOYSA-N digermane Chemical compound [Ge][Ge] VXGHASBVNMHGDI-UHFFFAOYSA-N 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- MRELNEQAGSRDBK-UHFFFAOYSA-N lanthanum(3+);oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[La+3].[La+3] MRELNEQAGSRDBK-UHFFFAOYSA-N 0.000 description 2
- 150000001247 metal acetylides Chemical class 0.000 description 2
- 230000006911 nucleation Effects 0.000 description 2
- 238000010899 nucleation Methods 0.000 description 2
- 238000001878 scanning electron micrograph Methods 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 229910052726 zirconium Inorganic materials 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 1
- 229910004166 TaN Inorganic materials 0.000 description 1
- 230000002159 abnormal effect Effects 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- SLLGVCUQYRMELA-UHFFFAOYSA-N chlorosilicon Chemical compound Cl[Si] SLLGVCUQYRMELA-UHFFFAOYSA-N 0.000 description 1
- 230000000052 comparative effect Effects 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000010790 dilution Methods 0.000 description 1
- 239000012895 dilution Substances 0.000 description 1
- PZPGRFITIJYNEJ-UHFFFAOYSA-N disilane Chemical compound [SiH3][SiH3] PZPGRFITIJYNEJ-UHFFFAOYSA-N 0.000 description 1
- 229910003440 dysprosium oxide Inorganic materials 0.000 description 1
- NLQFUUYNQFMIJW-UHFFFAOYSA-N dysprosium(iii) oxide Chemical compound O=[Dy]O[Dy]=O NLQFUUYNQFMIJW-UHFFFAOYSA-N 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 229910001938 gadolinium oxide Inorganic materials 0.000 description 1
- 229940075613 gadolinium oxide Drugs 0.000 description 1
- CMIHHWBVHJVIGI-UHFFFAOYSA-N gadolinium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[Gd+3].[Gd+3] CMIHHWBVHJVIGI-UHFFFAOYSA-N 0.000 description 1
- 229910052735 hafnium Inorganic materials 0.000 description 1
- 229910000449 hafnium oxide Inorganic materials 0.000 description 1
- WIHZLLGSGQNAGK-UHFFFAOYSA-N hafnium(4+);oxygen(2-) Chemical compound [O-2].[O-2].[Hf+4] WIHZLLGSGQNAGK-UHFFFAOYSA-N 0.000 description 1
- 229910000311 lanthanide oxide Inorganic materials 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- UZLYXNNZYFBAQO-UHFFFAOYSA-N oxygen(2-);ytterbium(3+) Chemical compound [O-2].[O-2].[O-2].[Yb+3].[Yb+3] UZLYXNNZYFBAQO-UHFFFAOYSA-N 0.000 description 1
- RVTZCBVAJQQJTK-UHFFFAOYSA-N oxygen(2-);zirconium(4+) Chemical compound [O-2].[O-2].[Zr+4] RVTZCBVAJQQJTK-UHFFFAOYSA-N 0.000 description 1
- 229910052707 ruthenium Inorganic materials 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 229910000077 silane Inorganic materials 0.000 description 1
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Chemical class [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 description 1
- FDNAPBUWERUEDA-UHFFFAOYSA-N silicon tetrachloride Chemical compound Cl[Si](Cl)(Cl)Cl FDNAPBUWERUEDA-UHFFFAOYSA-N 0.000 description 1
- 229910003468 tantalcarbide Inorganic materials 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- IEXRMSFAVATTJX-UHFFFAOYSA-N tetrachlorogermane Chemical compound Cl[Ge](Cl)(Cl)Cl IEXRMSFAVATTJX-UHFFFAOYSA-N 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- VEDJZFSRVVQBIL-UHFFFAOYSA-N trisilane Chemical compound [SiH3][SiH2][SiH3] VEDJZFSRVVQBIL-UHFFFAOYSA-N 0.000 description 1
- 229910003454 ytterbium oxide Inorganic materials 0.000 description 1
- 229940075624 ytterbium oxide Drugs 0.000 description 1
- 229910001928 zirconium oxide Inorganic materials 0.000 description 1
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- C—CHEMISTRY; METALLURGY
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- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
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- C—CHEMISTRY; METALLURGY
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- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/28—Deposition of only one other non-metal element
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
- H01L21/0237—Materials
- H01L21/02373—Group 14 semiconducting materials
- H01L21/02381—Silicon, silicon germanium, germanium
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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- H01L21/02365—Forming inorganic semiconducting materials on a substrate
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- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
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- H01L21/02365—Forming inorganic semiconducting materials on a substrate
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Abstract
【解決手段】非反応性キャリアガスと、高次のゲルマニウム前駆体ガス、即ちゲルマン(GeH4)より高次のゲルマニウム前駆体ガスとの混合物が適用される。好適には、約275℃と約500℃との間の堆積温度で堆積が行われ、混合物中の前駆体ガスの分圧は、約275℃と約285℃との間の温度で少なくとも20mTorrであり、約285℃と約500℃との間の温度で少なくとも10mTorrである。
【選択図】図2
Description
基板を提供する工程と、
化学気相堆積(CVD)により表面上に層を提供するのに適した反応チャンバ中に、基板を導入する工程と、
チャンバ中に、ゲルマニウム前駆体ガスと非反応性キャリアガスとを含むガス混合物を導入する工程であって、ゲルマニウム前駆体ガスは、GeH4と比較して高次のゲルマン前駆体である工程と、
基板表面を覆い、これと接続する連続したゲルマニウム層をCVDにより堆積する工程と、含む。
好適には、すでにキャリアガスをチャンバに供給しながら、反応チャンバの内部を堆積温度まで加熱する工程と、
堆積温度に到達した場合に、前駆体ガスとキャリアガスとをチャンバに供給し、基板上にGe層を堆積する工程と、
を実施して行われる。
high−k誘電体材料、
シリコン酸化物、
Si窒化物またはSi炭化物、
金属または金属窒化物または金属炭化物、
からなるグループの材料からなる表面領域を少なくとも含む。
特別な具体例では、基板表面は、少なくともチタン窒化物を含む表面領域、および/または少なくともSiO2を含む表面領域を含む。
好適には大気圧におけるガス混合物は、Ge前駆体ガス、可能であればドーパント元素を含むガス、および例えばN2またはH2のような非反応性キャリアガスを含みまたはからなる。ドーパント元素は、気体状のB2H6として混合物に加えられたホウ素でも良い。また、例えば、AsH3やPH3を混合物に加えるように、n型ドーパント元素が混合物に加えられても良い。この混合物から、Siシード層を必要とすることなく、例えばSiO2上のような基板表面上に、CVDにより(可能であればドープされた)連続したGe層が堆積される。Ge層は、主に層がその上に堆積される基板の型に依存して、アモルファス、多結晶、または単結晶でも良い。連続した層は、アイランドの形成を示さない層を意味する。そのような堆積方法は、公知のCVD手順により導かれ、公知のCVD装置中で行われる。本発明の方法に適用されるCVD技術は、プラズマ強化VCVD(PECVD)のようなプラズマアシストプロセスを使用しない。
high−k誘電体材料、例えばハフニウム酸化物、ジルコニウム酸化物、ランタニド酸化物(ランタン酸化物、ジスプロシウム酸化物、ガドリニウム酸化物、イッテルビウム酸化物)、およびそれらの組み合わせ。それらの材料は、前駆体としてGeH4を用いたGeの直接堆積の観点からみると、シリコン酸化物として同じ型の問題、即ち、成長温度で脱着する揮発性Ge亜酸化物の形成、を示しそうである。
Si窒化物またはSi炭化物(SiN、SiC)。
金属または金属窒化物/金属炭化物(例えば、Hf、Zr、Al、Ti、TiN、Ta、Zr、Ru、TaN、TaC)。
Claims (13)
- 基板表面上に連続したゲルマニウム層を堆積する方法であって、
基板を提供する工程と、
化学気相堆積(CVD)により表面上に層を提供するのに適した反応チャンバ中に、基板を導入する工程と、
チャンバ中に、ゲルマニウム前駆体ガスと非反応性キャリアガスとを含むガス混合物を導入する工程であって、ゲルマニウム前駆体ガスは、GeH4に比較して高次のゲルマン前駆体である工程と、
基板表面を覆い、これと接続する連続したゲルマニウム層をCVDで堆積する工程と、含む方法。 - ゲルマニウム前駆体は、Ge2H6またはGe3H8である請求項1に記載の方法。
- ガス混合物は、大気圧である請求項1または2に記載の方法。
- 堆積工程は、約275℃と約500℃との間の堆積温度で行われ、ガス混合物中のゲルマニウム前駆体の分圧は、堆積温度が約275℃と約285℃との間の場合は少なくとも20mTorrであり、堆積温度が約285℃より高く約500℃までの場合は少なくとも10mTorrである請求項1〜3のいずれかに記載の方法。
- 基板表面は、
high−k誘電体材料、
シリコン酸化物、
Si窒化物またはSi炭化物、
金属または金属窒化物または金属炭化物、
からなるグループの材料からなる表面領域を少なくとも含む請求項1〜4のいずれかに記載の方法。 - 基板表面は、チタン窒化物からなる表面領域を少なくとも含む請求項5に記載の方法。
- 基板表面は、SiO2からなる表面領域を少なくとも含む請求項5または6に記載の方法。
- ガス混合物は、更にドーピング元素を含むガスを含む請求項1〜7のいずれかに記載の方法。
- ドーピング元素を含むガスは、B2H6またはAsH3またはPH3である請求項8に記載の方法。
- キャリアガスは、H2またはN2である請求項1〜9のいずれかに記載の方法。
- 基板表面の少なくとも一部の上のTiN層と、TiN層を覆いTiN層と接続する連続したGe層とを含む基板。
- 請求項11にかかる基板を含む半導体デバイス。
- 請求項1〜10のいずれかの方法により作製された基板を含む半導体デバイス。
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EP11150559.0 | 2011-01-11 | ||
EP11150559.0A EP2474643B1 (en) | 2011-01-11 | 2011-01-11 | Method for direct deposition of a germanium layer |
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US9570359B2 (en) | 2013-10-31 | 2017-02-14 | Samsung Electronics Co., Ltd. | Substrate structure, complementary metal oxide semiconductor device, and method of manufacturing complementary metal oxide semiconductor device |
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US8530339B2 (en) | 2013-09-10 |
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